cosmo 452
Abstract: No abstract text available
Text: KPC452 Series 4PIN MINI-FLAT PHOTODARLINGTON PHOTOCOUPLER cosmo Schematic Description The KPC452 consist of a photo darlington optically coupled to a gallium arsenide infrared-emitting diodes in a 4-pin Mini-Flat package. Collector-emitter voltage is 300V.
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KPC452
3750Vrms)
69P04006
cosmo 452
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Untitled
Abstract: No abstract text available
Text: KPS2802 Series 4PIN SSOP PHOTODARLINGTON PHOTOCOUPLER cosmo Description Schematic The KPS2802 series consist of a photo darlington optically coupled to a gallium arsenide infrared-emitting diodes in a 4-pin SSOP package. The input-output isolation voltage is rated at 3750 Vrms.
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KPS2802
3750Vrms)
UL1577
E169586
NCS/FI24585
GB4943
GB8898-201all
69P25002
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PDF
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smd a15m
Abstract: s/ksmh12/2.27/30/smd a15m
Text: KT1300 Series 4PIN LSOP PHOTOTRANSISTOR PHOTOCOUPLER cosmo Description Schematic The KT1300 series consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a photo darlington detector. They are packaged in a 4-pin LSOP wide body package. It features a high current
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KT1300
5000Vrms
UL15all
69P26001
smd a15m
s/ksmh12/2.27/30/smd a15m
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PDF
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Untitled
Abstract: No abstract text available
Text: KPS2806 Series 4PIN SSOP PHOTODARLINGTON PHOTOCOUPLER cosmo Description Schematic The KPS2806 series consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a photo darlington detector. They are packaged in a 4-pin SSOP package. The input-output isolation voltage is
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KPS2806
3750Vrms)
UL1577
E169586
607all
69P27001
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PDF
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Untitled
Abstract: No abstract text available
Text: KT1310 Series 4PIN LSOP PHOTOTRANSISTOR PHOTOCOUPLER cosmo Description Schematic The KT1310 series consist of two infrared emitting diodes, connected in inverse parallel, optically coupled to a photo darlington detector. They are packaged in a 4-pin LSOP wide body package. It features a high current
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KT1310
5000Vrms
69P26002
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Untitled
Abstract: No abstract text available
Text: KT1200 Series 4PIN LSOP PHOTODARLINGTON PHOTOCOUPLER cosmo Description Schematic 4 1 The KT1200 series consist of a photo darlington optically coupled to a gallium arsenide 3 2 infrared-emitting diode in a 4 pin LSOP wide body package. It features a high current transfer ratio, low
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KT1200
5000Vrms
UL1577
E169586
69P20005
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PDF
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Untitled
Abstract: No abstract text available
Text: KT1210 Series 4PIN LSOP PHOTODARLINGTON PHOTOCOUPLER cosmo Description Schematic 4 1 The KT1210 series consist of a photo darlington optically coupled to a gallium arsenide infrared-emitting 3 2 diode in a 4 pin LSOP wide body package. It features a high current transfer ratio, low coupling capacitance and
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KT1210
5000Vrms
UL1577
69P20006
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h11cx
Abstract: GK transistor PHOTO SCR definition IN5060 diode SC146D DATA SHEET Photo SCR H11C3 H11C5 H11C4 scr pins
Text: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled
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H11C1
H11C2
H11C3
H11C4
H11C5
H11C6
E90700
H11C1
00V/400V
h11cx
GK transistor
PHOTO SCR definition
IN5060 diode
SC146D DATA SHEET
Photo SCR
H11C3
H11C5
H11C4
scr pins
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h11cx
Abstract: GK transistor in5060 SC146D H11C H11C3 gk 02 a 041 H11C1 IN5060 diode GK 74 transistor
Text: PHOTO SCR OPTOCOUPLERS H11C1 H11C2 H11C3 H11C4 PACKAGE H11C5 SCHEMATIC ANODE 1 6 H11C6 6 GATE 6 CATHODE 2 5 ANODE 1 N/C 3 1 4 CATHODE 6 1 DESCRIPTION The H11C series consists of a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled
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H11C1
H11C2
H11C3
H11C4
H11C5
H11C6
E90700
H11C1
00V/400V
h11cx
GK transistor
in5060
SC146D
H11C
H11C3
gk 02 a 041
IN5060 diode
GK 74 transistor
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PDF
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AP3015
Abstract: SS14 12V to 42V dc dc converter step-up dc dc schematic converter
Text: Demo Board Manual -DB-B Micro Power Step-Up DC/DC Converter AP3015 Content: 1. Description 2. Specification 3. Schematic of the Demo Board 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result August. 2006 Rev. 1.2 1 BCD Semiconductor Manufacturing Limited
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AP3015
AP3015
SS14
12V to 42V dc dc converter step-up
dc dc schematic converter
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PDF
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302v smd component
Abstract: 302V smd diode ss14 AP3015 SS14 schottky smd Step-up 12V to 15V SS14 DIODE schottky bcd sw ss14 schottky
Text: Demo Board Manual - DB-A Micro Power Step-Up DC/DC Converter AP3015 Content: 1. Description 2. Specification 3. Schematic of the Demo Board 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result August. 2006 Rev. 1.2 1 BCD Semiconductor Manufacturing Limited
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AP3015
AP3015
100mA
125mA
302v smd component
302V
smd diode ss14
SS14
schottky smd
Step-up 12V to 15V
SS14 DIODE schottky
bcd sw
ss14 schottky
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PDF
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smd diode ss14
Abstract: DC SS14 diode SS14 DIODE schottky AP3015 ss14 smd SS14 a 19946 Diode SS14, SMD
Text: Demo Board Manual -DB-C Micro Power Step-Up DC/DC Converter AP3015 Content: 1. Description 2. Specification 3. Schematic of the Demo Board 4. PCB Layout 5. Photo View of the Demo Board 6. PCB Dimensions 7. BOM 8. Test Result August. 2006 Rev. 1.2 1 BCD Semiconductor Manufacturing Limited
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AP3015
AP3015
smd diode ss14
DC SS14 diode
SS14 DIODE schottky
ss14 smd
SS14
a 19946
Diode SS14, SMD
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PDF
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everlight Ha 1.0
Abstract: No abstract text available
Text: 4 PIN LO ONG CR REEPAG GE SOP P P PHOTOT TRANSISTOR PHOTO P OCOUPL LER E EL101X-G Serie es Schematic F Features: • Free halo ogens compliiant • Current trransfer ratio CTR: 50 0~600% at IF =5mA, VCE =5V (CTR: 63 3~320% at IF =10mA, VCE =5V) • High isola
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EL101X-
DPC-0000037
everlight Ha 1.0
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H11f1 variable resistor 500k
Abstract: H11F1 variable resistor 500k H11F3 h11f1 application data sheet book h11f1 sample H11F2 H11F 5v 10mA reed relay data sheet book h11f1 pin
Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
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H11F1
H11F2
H11F3
H11f1 variable resistor 500k
variable resistor 500k
H11F3
h11f1 application
data sheet book h11f1 sample
H11F
5v 10mA reed relay
data sheet book h11f1 pin
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H11f1 variable resistor 500k
Abstract: H11F1 300 H11F1300W h11f1 application H11F1
Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
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H11F1
H11F2
H11F3
E90700,
P01101067
H11F1300
H11F1300W
H11F13S
H11F13SD
H11f1 variable resistor 500k
H11F1 300
h11f1 application
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PDF
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H11F3
Abstract: H11f1 variable resistor 500k an 7511 500k variable resistor H11F1
Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
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H11F1
H11F2
H11F3
P01101067
H11F3
H11F3300
H11F3300W
H11F33S
H11F33SD
H11F3S
H11f1 variable resistor 500k
an 7511
500k variable resistor
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PDF
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h11f1 application
Abstract: H11F1 40 FET Analog Devices
Text: PHOTO FET OPTOCOUPLERS H11F1 H11F2 H11F3 PACKAGE 6 SCHEMATIC ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. 6 1 1 OUTPUT TERM. 6 1 DESCRIPTION The H11F series consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free
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H11F1
H11F2
H11F3
\TEMP\H11F2300
17-Aug-2007
H11F2
H11F2300
H11F2300W
H11F23S
h11f1 application
40 FET Analog Devices
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PDF
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S10604
Abstract: No abstract text available
Text: Technical information Characteristics and use of photo IC diodes 1 [Figure 1] Spectral response Overview a Infrared type (➀) (Typ. Ta=25 °C, VR=5 V) 1.0 The photo IC diodes are devices that boost the photocurrent generated from a photodiode approx. 1300 times (or 30000
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B1201,
KPIC9007E02
S10604
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Untitled
Abstract: No abstract text available
Text: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
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H11F1M,
H11F2M,
H11F3M
H11FXM
E90700)
H11F3M
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PDF
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H11F1M
Abstract: H11f1 variable resistor 500k Fairchild H11FxM Resistive Optocouplers H11F3M
Text: H11F1M, H11F2M, H11F3M Photo FET Optocouplers Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
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H11F1M,
H11F2M,
H11F3M
E90700)
H11FXM
H11F1M
H11f1 variable resistor 500k
Fairchild H11FxM
Resistive Optocouplers
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PDF
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h11f1m
Abstract: H11FXM Fairchild H11FxM H11FX H11F2M H11F3M H74A1 H11F1SVM
Text: H11F1M, H11F2M, H11F3M Photo FET Optocouplers tm Features General Description As a remote variable resistor: • ≤ 100Ω to ≥ 300MΩ ■ ≥ 99.9% linearity ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical
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H11F1M,
H11F2M,
H11F3M
H11FXM
H11F3M
h11f1m
Fairchild H11FxM
H11FX
H11F2M
H74A1
H11F1SVM
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PDF
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J1 TRANSISTOR DIODE SOT-23 PACKAGE
Abstract: 3.3V TVS diode wj SP0502BAHTG TVS Diode DIODE WJ SOt23 J1 TRANSISTOR DIODE SOT-23 TVS diode power line Application Note WJ transistor ST tvs diode sma
Text: Application Note AP60X Evaluation Board Modifications for TVS Protection Product Information The AP60X Evaluation Board has been modified with Transient Voltage Suppression protection on the DC Supply lines. TVS diodes have been added to the Vpd, Vbias and Vcc lines. Table 1 contains mfg part numbers. Figure 1 is a AP60X schematic
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AP60X
OT-23
AP56X)
AH21X,
AH31X)
J1 TRANSISTOR DIODE SOT-23 PACKAGE
3.3V TVS
diode wj
SP0502BAHTG
TVS Diode
DIODE WJ SOt23
J1 TRANSISTOR DIODE SOT-23
TVS diode power line Application Note
WJ transistor
ST tvs diode sma
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PDF
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11AA4
Abstract: No abstract text available
Text: H llA A l - H11AA4 tSOCOM AC INPUT COUPLED ISOLATOR Ga AS INFRARED EMITTING DIODE & NPN PHOTO-TRANSISTOR PACKAGEDEMENSIONSINCHES MM SCHEMATIC j 44_ .070 (1.78) Typ .100 (2.54) -M Typ -* j 1 *- 1 ! h u.140 (Ì.56)Min (si a t ^¡1/ o Q) (¿) (j .350 (8.89)
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OCR Scan
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H11AA4
11AA4
H11AA3
H11AA1
H11AA2
500VDC)
100ft)
100i2)
DA91043-AAS/01
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PDF
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1000 watt mosfet power amplifier
Abstract: 12VDC power regulator UC3573 1000 watt buck converter 300 watt mosfet amplifier
Text: DN-70 U N IT R D D E Design Note UC3573 Buck Regulator PWM Control 1C Typical Application Circuit for +12VDC Input to +5VDC/1A Output Also : Demonstration Kit Circuit Schematic and List of Materials by Chuck Melchin and Bill Andreycak Figure 2. Photo of UC3573 Demo Kit
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OCR Scan
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DN-70
UC3573
12VDC
iF/25V
100kHz
F/50V
47jxF/50V
2nF/50V
27pF/50V
1000 watt mosfet power amplifier
12VDC power regulator
1000 watt buck converter
300 watt mosfet amplifier
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PDF
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