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    SC97 MARKING Search Results

    SC97 MARKING Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    OP249GSZ Analog Devices SO-8 MARKED AS \\OP249G\\ Visit Analog Devices Buy
    DAC08ESZ-REEL Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF02CSZ Analog Devices SO-8 MARKED AS \\REF02C\\ Visit Analog Devices Buy
    DAC08ESZ Analog Devices SO-16 MARKED AS \\DAC08E\\ Visit Analog Devices Buy
    REF03GSZ Analog Devices SO-8 MARKED AS \\REF03G\\ Visit Analog Devices Buy
    OP221GSZ Analog Devices SO-8 MARKED AS \\OP221G\\ Visit Analog Devices Buy

    SC97 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K3397

    Abstract: 2SK3397 Transistor ERA - 3
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) · High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		PDF 2SK3397 K3397 2SK3397 Transistor ERA - 3

    k3397

    Abstract: k339 2SK3397
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅡ 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: Yfs = 110 S (typ.)


    Original     		PDF 2SK3397 k3397 k339 2SK3397

    Untitled

    Abstract: No abstract text available
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		PDF 2SK3397

    Untitled

    Abstract: No abstract text available
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		PDF 2SK3397 to150

    K3538

    Abstract: 2SK3538 SC-97 SC97 Sc97 MARKING "k3538" SC-97 JEDEC
    Text: 2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3538 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		PDF 2SK3538 K3538 2SK3538 SC-97 SC97 Sc97 MARKING "k3538" SC-97 JEDEC

    2SK3445

    Abstract: No abstract text available
    Text: 2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3445 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		PDF 2SK3445 2SK3445

    2SK3388

    Abstract: No abstract text available
    Text: 2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3388 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.)


    Original     		PDF 2SK3388 2SK3388

    2SK3538

    Abstract: No abstract text available
    Text: 2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3538 Switching Regulator, DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 75 mΩ (typ.) · High forward transfer admittance: |Yfs| = 7.0 S (typ.) ·


    Original     		PDF 2SK3538 2SK3538

    Untitled

    Abstract: No abstract text available
    Text: 2SK3438 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original     		PDF 2SK3438

    Untitled

    Abstract: No abstract text available
    Text: 2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3444 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		PDF 2SK3444

    Untitled

    Abstract: No abstract text available
    Text: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)


    Original     		PDF 2SK3499 to150

    2SJ619

    Abstract: No abstract text available
    Text: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-F-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 0.15 W (typ.) · High forward transfer admittance: ïYfsï = 7.7 S (typ.)


    Original     		PDF 2SJ619 2SJ619

    2SJ620

    Abstract: No abstract text available
    Text: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Unit: mm 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) · High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original     		PDF 2SJ620 2SJ620

    2SJ619

    Abstract: No abstract text available
    Text: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.7 S (typ.)


    Original     		PDF 2SJ619 -64oducts 2SJ619

    2SK3499

    Abstract: k3499 K349
    Text: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) · High forward transfer admittance: |Yfs| = 8.0 S (typ.)


    Original     		PDF 2SK3499 2SK3499 k3499 K349

    Untitled

    Abstract: No abstract text available
    Text: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)


    Original     		PDF 2SK3389

    Untitled

    Abstract: No abstract text available
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: Yfs = 4.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)


    Original     		PDF 2SK3466

    Untitled

    Abstract: No abstract text available
    Text: 2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3388 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.)


    Original     		PDF 2SK3388 SC-97

    2SJ620

    Abstract: No abstract text available
    Text: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original     		PDF 2SJ620 2SJ620

    DR1.2

    Abstract: 2SK3388
    Text: 2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3388 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) · High forward transfer admittance: |Yfs| = 20 S (typ.)


    Original     		PDF 2SK3388 DR1.2 2SK3388

    2SJ620

    Abstract: No abstract text available
    Text: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) •


    Original     		PDF 2SJ620 2SJ620

    K3389

    Abstract: k338 2SK3389
    Text: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)


    Original     		PDF 2SK3389 K3389 k338 2SK3389

    2SJ619

    Abstract: No abstract text available
    Text: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: Yfs = 7.7 S (typ.)


    Original     		PDF 2SJ619 -64transportation 2SJ619

    K3444

    Abstract: 2SK3444 SC-97
    Text: 2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3444 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		PDF 2SK3444 125oducts K3444 2SK3444 SC-97