Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SC97 MARKING Search Results

    SC97 MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    SC97 MARKING Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K3397

    Abstract: 2SK3397 Transistor ERA - 3
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) · High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		2SK3397 K3397 2SK3397 Transistor ERA - 3 PDF

    k3397

    Abstract: k339 2SK3397
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅡ 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: Yfs = 110 S (typ.)


    Original     		2SK3397 k3397 k339 2SK3397 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		2SK3397 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3397 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3397 Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 110 S (typ.)


    Original     		2SK3397 to150 PDF

    K3538

    Abstract: 2SK3538 SC-97 SC97 Sc97 MARKING "k3538" SC-97 JEDEC
    Text: 2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK3538 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.)


    Original     		2SK3538 K3538 2SK3538 SC-97 SC97 Sc97 MARKING "k3538" SC-97 JEDEC PDF

    2SK3445

    Abstract: No abstract text available
    Text: 2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3445 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		2SK3445 2SK3445 PDF

    2SK3388

    Abstract: No abstract text available
    Text: 2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3388 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.)


    Original     		2SK3388 2SK3388 PDF

    2SK3538

    Abstract: No abstract text available
    Text: 2SK3538 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3538 Switching Regulator, DC-DC Converter Applications • Low drain-source ON resistance: RDS (ON) = 75 mΩ (typ.) · High forward transfer admittance: |Yfs| = 7.0 S (typ.) ·


    Original     		2SK3538 2SK3538 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3438 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3438 DC-DC Converter, Relay Drive and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.74 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.)


    Original     		2SK3438 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3444 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		2SK3444 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.)


    Original     		2SK3499 to150 PDF

    2SJ619

    Abstract: No abstract text available
    Text: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-F-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 0.15 W (typ.) · High forward transfer admittance: ïYfsï = 7.7 S (typ.)


    Original     		2SJ619 2SJ619 PDF

    2SJ620

    Abstract: No abstract text available
    Text: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Unit: mm 4-V gate drive · Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) · High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original     		2SJ620 2SJ620 PDF

    2SJ619

    Abstract: No abstract text available
    Text: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 7.7 S (typ.)


    Original     		2SJ619 -64oducts 2SJ619 PDF

    2SK3499

    Abstract: k3499 K349
    Text: 2SK3499 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3499 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ.) · High forward transfer admittance: |Yfs| = 8.0 S (typ.)


    Original     		2SK3499 2SK3499 k3499 K349 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)


    Original     		2SK3389 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3466 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3466 Chopper Regulator • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: Yfs = 4.0 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)


    Original     		2SK3466 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3388 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) • High forward transfer admittance: |Yfs| = 20 S (typ.)


    Original     		2SK3388 SC-97 PDF

    2SJ620

    Abstract: No abstract text available
    Text: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) • High forward transfer admittance: |Yfs| = 15 S (typ.)


    Original     		2SJ620 2SJ620 PDF

    DR1.2

    Abstract: 2SK3388
    Text: 2SK3388 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3388 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.) · High forward transfer admittance: |Yfs| = 20 S (typ.)


    Original     		2SK3388 DR1.2 2SK3388 PDF

    2SJ620

    Abstract: No abstract text available
    Text: 2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ620 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Unit: mm 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) •


    Original     		2SJ620 2SJ620 PDF

    K3389

    Abstract: k338 2SK3389
    Text: 2SK3389 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSII 2SK3389 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.) • High forward transfer admittance: |Yfs| = 70 S (typ.)


    Original     		2SK3389 K3389 k338 2SK3389 PDF

    2SJ619

    Abstract: No abstract text available
    Text: 2SJ619 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L2-π-MOSV 2SJ619 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • 4-V gate drive • Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.) • High forward transfer admittance: Yfs = 7.7 S (typ.)


    Original     		2SJ619 -64transportation 2SJ619 PDF

    K3444

    Abstract: 2SK3444 SC-97
    Text: 2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3444 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		2SK3444 125oducts K3444 2SK3444 SC-97 PDF