SC-89
Abstract: diode marking N9 DAN222 n923 diode N9
Text: WEITRON WAN222 Surface Mount Switching Diode SWITCHING DIODE 100m AMPERRES 80 VOLTS Features: *Extremely High Switching Speedff *Low Reverse Leakage Current *Small Outline Surface Mount SC-89 Package *High Reliability SC-89 SOT-523F Applications: Ultra High Speed Switching
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WAN222
SC-89
SC-89
OT-523F)
50BSC
10-Jul-09
DAN222
diode marking N9
DAN222
n923
diode N9
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SC-75A
Abstract: Si1013X-T1-E3 SC-75 SC-89 Si1013R Si1013R-T1-E3 Si1013X Si1013X-T1-GE3
Text: Si1013R/X Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 • Halogen-free Option Available • High-Side Switching •
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Si1013R/X
SC-75A
SC-89
SC-75A
OT-416)
Si1013R
OT-490)
Si1013X
Si1013R-T1-E3
Si1013X-T1-E3
SC-75
SC-89
Si1013X-T1-GE3
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA123EET1 PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LDTA123EET1
SC-89
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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SC-89
Abstract: BAV70T
Text: BAV70T Surface Mount Switching Diodes SWITCHING DIODES 200 mAMPERES 70 VOLTS P b Lead Pb -Free Features: * Ultra-Small Surface Mount Package * Fast switching Speed * For General Purpose Switching Applications * High Conductance Mechanical Data: SOT-523F(SC-89)
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BAV70T
OT-523F
SC-89)
SC-89
50BSC
100mA
150mA
SC-89
BAV70T
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transistor smd ZR
Abstract: MARKING SMD PNP TRANSISTOR Zr transistor smd ZR npn TRANSISTOR SMD MARKING CODE UA transistor SMD BP smd transistor marking zr smd code marking sot23 philips transistor smd code TRANSISTOR SMD MARKING CODE transistor ZR 08
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 2PC4617J NPN general purpose transistor Product specification Supersedes data of 1999 May 04 2001 Aug 03 Philips Semiconductors Product specification NPN general purpose transistor 2PC4617J PINNING FEATURES • Power dissipation comparable to SOT23
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M3D425
2PC4617J
SCA73
613514/03/pp8
transistor smd ZR
MARKING SMD PNP TRANSISTOR Zr
transistor smd ZR npn
TRANSISTOR SMD MARKING CODE UA
transistor SMD BP
smd transistor marking zr
smd code marking sot23
philips transistor smd code
TRANSISTOR SMD MARKING CODE
transistor ZR 08
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SC-89
Abstract: No abstract text available
Text: NZL5V6AXV3T1 Series Preferred Devices Zener Voltage Regulators SC - 89 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring ESD protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers,
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SC-89
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si1013r
Abstract: SI1013X-T1-GE3 SC-75 SC-75A SC-89 Si1013R-T1-E3 Si1013X Si1013X-T1-E3 VISHAY MARKING Sc
Text: Si1013R/X Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 • Halogen-free Option Available • High-Side Switching •
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Si1013R/X
SC-75A
SC-89
SC-75A
OT-416)
Si1013R
OT-490)
Si1013X
Si1013R-T1-E3
SI1013X-T1-GE3
SC-75
SC-89
Si1013X-T1-E3
VISHAY MARKING Sc
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Untitled
Abstract: No abstract text available
Text: BAW56T Monolithic Dual Swithcing Diode Common Anode SWITCHING DIODES 200 mAMPERES 70 VOLTS P b Lead Pb -Free Features: * We Declare that the Material of Product Compliance With RoHS Requirements SOT-523F(SC-89) SOT-523F Outline Dimensions (SC-89) Unit:mm A
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BAW56T
OT-523F
SC-89)
SC-89
50BSC
01-Aug-2013
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SC-89
Abstract: No abstract text available
Text: 2N7002KT N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead Pb -Free 1 2 FEATURES: SC-89 * Gate-Source ESD Protected: 1500 V * Fast Switching Speed * Low On-Resistance * Low Voltage Driver Drain 3 APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories
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2N7002KT
SC-89
14-Sep-09
SC-89
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DG2011
Abstract: DG2011DX-T1 HP4192A SC-89
Text: DG2011 Vishay Siliconix Low-Voltage, Low rON, Single SPDT Analog Switch In SC-89 Package FEATURES BENEFITS D Low Voltage Operation 1.8 V to 5.5 V D Low On-Resistance - rON: 1.8 W @ 2.7 V D Low Charge Injection D Low Voltage Logic Compatible D SC-89 Package (1.6 x 1.6 mm)
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DG2011
SC-89
DG2011
HP4192A
S-50509--Rev.
21-Mar-05
DG2011DX-T1
HP4192A
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LNTA4001NT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LNTA4001NT1G S-LNTA4001NT1G Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection Features •ăLow Gate Charge for Fast Switching •ăSmall 1.6 x 1.6 mm Footprint •ăESD Protected Gate •ăPb-Free Package is Available
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LNTA4001NT1G
S-LNTA4001NT1G
SC-89
AEC-Q101
463C-01
463C-02.
LNTA4001NT1G
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K1 transistor
Abstract: K1 transistor datasheets LDTB123TET1G SC-89 "device marking" k1 marking
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • • LDTB123TET1G Applications Inverter, Interface, Driver 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTB123TET1G
3000/Tape
LDTB123TET3G
10000/Tape
SC-89
463C-01
463C-02.
K1 transistor
K1 transistor datasheets
LDTB123TET1G
SC-89
"device marking"
k1 marking
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LDTA113ZET1G
Abstract: SC-89
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA113ZET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTA113ZET1G
SC-89
3000/Tape
LDTA113ZET3G
10000/Tape
463C-01
LDTA113ZET1G
SC-89
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SC-89-3
Abstract: No abstract text available
Text: Si1013R/X Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (mA) 1.2 at VGS = - 4.5 V - 350 1.6 at VGS = - 2.5 V - 300 2.7 at VGS = - 1.8 V - 150 SC-75A or SC-89 G APPLICATIONS 1 3 S • Halogen-free According to IEC 61249-2-21
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Si1013R/X
2002/95/EC
SC-75A
SC-89
SC-75A
OT-416)
Si1013R
2011/65/EU
2002/95/EC.
2002/95/EC
SC-89-3
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LDTD114EET1G
Abstract: SC-89
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTD114EET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTD114EET1G
SC-89
-50mA,
100MHz
463C-01
463C-02.
LDTD114EET1G
SC-89
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diode marking N9
Abstract: diode N9 N9 diode SC-89
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LDAN222T1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low
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LDAN222T1G
SC-89
463C-01
463C-02.
diode marking N9
diode N9
N9 diode
SC-89
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diode marking N9
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LDAN222T1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low
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LDAN222T1G
SC-89
463C-01
463C-02.
diode marking N9
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BC847B-1F
Abstract: BC847A BC847B BC847C SC-89
Text: BC847AT/BT/CT COLLECTOR 3 General Purpose Transistor NPN Silicon 33 1 1 BASE 2 SC-89 SOT-523F 2 EMITTER M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
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BC847AT/BT/CT
SC-89
OT-523F)
BC847A
BC847B
BC847C
SC-89
50BSC
BC847B-1F
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Untitled
Abstract: No abstract text available
Text: BC847AT/BT/CT COLLECTOR 3 General Purpose Transistor NPN Silicon 33 1 1 BASE * “G” Lead Pb -Free 2 SC-89 (SOT-523F) 2 EMITTER M aximum R atings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
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BC847AT/BT/CT
SC-89
OT-523F)
BC847A
BC847B
BC847C
SC-89
50BSC
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S60004
Abstract: DG2011 DG2011DX-T1 DG2011DX-T1-E3 HP4192A SC-89
Text: DG2011 Vishay Siliconix Low-Voltage, Low rON, Single SPDT Analog Switch In SC-89 Package DESCRIPTION FEATURES The DG2011 is a low on-resistance, single-pole/doublethrow monolithic CMOS analog switch. It is designed for low voltage applications with guaranteed operation at 2 V. The
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DG2011
SC-89
DG2011
08-Apr-05
S60004
DG2011DX-T1
DG2011DX-T1-E3
HP4192A
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Untitled
Abstract: No abstract text available
Text: RClamp0502A RailClamp Low Capacitance TVS Array PROTECTION PRODUCTS - RailClamp® Description Features Transient protection for high-speed data lines to The RailClamp® series consists of ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifically designed to
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RClamp0502A
5/50ns)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LDTA143EET1 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LDTA143EET1
SC-89
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Untitled
Abstract: No abstract text available
Text: WTX1013 P-Channel 1.8-V G-S MOSFET P b Lead(Pb)-Free 3 FEATURES: 1 * TrenchFET@ Power MOSFET: 1.8-V Rated * Gate-Source ESD Protected: 2000V * High-Side Switching * Low On-Resistance: 1.2Ω * Low Threshold: 0.8 V (typ) * Fast Switching Speed: 14 ns * S-Prefix for Automotive and Other Applications Requiring
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WTX1013
SC-89
06-Sep-2013
SC-89
50BSC
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