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    SC108A Search Results

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    SC108A Price and Stock

    Mersen Electrical Power 1MSC108 (ALTERNATE: E234972)

    Fuseholder, Modular Semiconductor, AI Box,3/8" Bolt,200kA,600V | Mersen 1MSC108
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 1MSC108 (ALTERNATE: E234972) Bulk 16 Weeks 2
    • 1 -
    • 10 $430.26
    • 100 $408.75
    • 1000 $408.75
    • 10000 $408.75
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    Toshiba America Electronic Components 2SC108A-Y(TO-39)

    Bipolar Transistor (BJT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SC108A-Y(TO-39) 66
    • 1 -
    • 10 $27.4
    • 100 $22.4
    • 1000 $22.4
    • 10000 $22.4
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    SC108A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SC108A Unknown Shortform Transistor Datasheet Guide Short Form PDF
    SC108A Unknown Shortform Transistor PDF Datasheet Short Form PDF

    SC108A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-13633 Revision. 3 Product Standards Schottky Barrier Diode DB2130300L DB2130300L Silicon epitaxial planar type Unit: mm 1.25 0.6 For rectification 0.12 2 • Features 1.9 2.5  Low forward voltage VF  Small reverse leakage current  Halogen-free / RoHS compliant


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    PDF TT4-EA-13633 DB2130300L UL-94

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-12791 Revision. 2 Product Standards Schottky Barrier Diode DB2130200L DB2130200L Silicon epitaxial planar type Unit: mm 1.25 0.6 For rectification 0.12 2 • Features 1.9 2.5  Low forward voltage VF  Forward current Average IF(AV) = 1 A rectification is possible


    Original
    PDF TT4-EA-12791 DB2130200L UL-94

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-13679 Revision. 3 Product Standards Schottky Barrier Diode DB2141200L DB2141200L Silicon epitaxial planar type Unit: mm 1.25 0.6 For rectification 0.12 2 • Features 1.9 2.5  Low forward voltage and small reverse leakage current  Forward current Average IF(AV) = 1.5 A rectification is possible


    Original
    PDF TT4-EA-13679 DB2141200L UL-94

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711