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Abstract: No abstract text available
Text: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened
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STRH40P10
O-254AA
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened
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STRH40P10
O-254AA
SC06140p
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened
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STRH40P10
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SC06140p
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened
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STRH40P10
O-254AA
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strh40p10
Abstract: STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2
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STRH40P10
O-254AA
SC06140p
strh40p10
STRH40P10HYG
MIL-STD-750E
STRH40P10HY1
STRH40P10H
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite
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STRH40P10
O-254AA
SC06140p
STRH40P10HY1
STRH40P10Hy
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Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened
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STRH40P10
O-254AA
SC06140p
STRH40P10HY1any
DocID18354
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Untitled
Abstract: No abstract text available
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite
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STRH40P10
O-254AA
SC06140p
STRH40P10HY1
STRH40P10HYG
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strh40p10
Abstract: STRH40P10HYG
Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite
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STRH40P10
O-254AA
SC06140p
STRH40P10HY1
STRH40P
strh40p10
STRH40P10HYG
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Untitled
Abstract: No abstract text available
Text: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened
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STRH40P10
O-254AA
O-254AA
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Untitled
Abstract: No abstract text available
Text: STRH12P10 Rad-Hard P-channel 100 V, 12 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 12 A TBD TBD • Fast switching ■ 100% avalanche tested 1 ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 2 3 TO-257AA Applications ■ Satellite ■
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STRH12P10
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SC06140p
STRH12P10GY1
O-257AA
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