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    SC-97 JEDEC Search Results

    SC-97 JEDEC Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TMP139AIYAHR Texas Instruments JEDEC DDR5 temperature sensor with 0.5 °C accuracy 6-DSBGA -40 to 125 Visit Texas Instruments Buy
    SN74SSQEA32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy
    SN74SSQE32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments
    SN74SSQEB32882ZALR Texas Instruments JEDEC SSTE32882 Compliant 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy
    SN74SSQEC32882ZALR Texas Instruments JEDEC SSTE32882 Compliant Low Power 28-Bit to 56-Bit Registered Buffer with Address-Parity Test 176-NFBGA 0 to 85 Visit Texas Instruments Buy
    CAB4AZNRR Texas Instruments DDR4RCD01 JEDEC compliant DDR4 Register for RDIMM and LRDIMM operation up to DDR4-2400 253-NFBGA 0 to 0 Visit Texas Instruments Buy

    SC-97 JEDEC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5962-8949701MXA

    Abstract: qml-38535 C700 CDFP4-F28 MT42C4256 A3091 5962-8949704MXA SMJ44C251B-10SVM 5962-894970
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device types 03 and 04. Add case outline M. Add vendor CAGE 01295 as source of supply for device types 03 and 04. Update boilerplate. Editorial changes throughout. 94-11-01 M. A. Frye B Corrected number of leads for case outline package T in section 1.2.4


    Original     		PDF 0EU86 5962-8949701MXA qml-38535 C700 CDFP4-F28 MT42C4256 A3091 5962-8949704MXA SMJ44C251B-10SVM 5962-894970

    MT42C4256

    Abstract: No abstract text available
    Text: MT42C4256 883C 256K x 4 VRAM AUSTIN SEMICONDUCTOR, INC. Limited Supply - Consult Factory 256K x 4 DRAM WITH 512 x 4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89497 • MIL-STD-883 28-Pin DIP (400 MIL) FEATURES •


    Original     		PDF MT42C4256 MIL-STD-883 28-Pin DS000016

    AS4C4256

    Abstract: MAS 10 RCD MT42C4256 mt42c4256 -8
    Text: AS42C4256 883C 256K x 4 VRAM AUSTIN SEMICONDUCTOR, INC. VRAM 256K x 4 DRAM WITH 512 x 4 SAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883 28-Pin DIP (400 MIL) FEATURES • • • • • • • • • • Industry standard pinout, timing and functions


    Original     		PDF AS42C4256 MIL-STD-883 28-Pin 512-cycle 275mW DS000016 AS4C4256 MAS 10 RCD MT42C4256 mt42c4256 -8

    L425

    Abstract: lanskroun
    Text: Ta CAPACITORS WITH CONDUCTIVE POLYMER ROBUST TO LEAD FREE PROCESS A B S T R A C T : Tantalum capacitors with conductive polymer cathodes have found a place in the market as a low ESR component with reduced ignition. Conductive polymer cathodes however, suffer from instability


    Original     		PDF S-TCCPR0M605-N L425 lanskroun

    atm 38

    Abstract: MIL-STD-88 Broadband emitter nm LED
    Text: R E L E A S E ATM, FAST ETHERNET & FDDI LINK Fiber Optics 800-A1-FIBER Features & Benefits Applications • • • • • • • • • • • • • Full compliance with OC-3 and STM-1 requirements Data Rates up to 160 Mb/s Industry Standard 1x9 Pin


    Original     		PDF 800-A1-FIBER 2-A-191A, MIL-STD-883 atm 38 MIL-STD-88 Broadband emitter nm LED

    mostek mk37000

    Abstract: 23C64-25 8K x 8 CMOS ROM
    Text: D e | 7Ö 1 1 G 73 GGllflT? b | ~ ROCKWELL INTL/ SC PDTS /7811073 ROCKWÈLL INTL* 62C 118 97 SC PDTS DT'4-6*/3'/5 R23C64 M em o ry P ro d u cts fl!» R23C64 64K 8K X 8 CMOS ROM Rockwell PRELIMINARY DESCRIPTION The Rockwell R 23C 64 is an 8K x 8 (65,536 bits) C M O S readon-memory (R OM ) housed In a 28-pin JEDEC standard package.


    OCR Scan     		PDF R23C64 R23C64 28-pin mostek mk37000 23C64-25 8K x 8 CMOS ROM

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Commercial PEEL 22LV10AZ-25 CMOS Programmable Electrically Erasable Logic Device FEATURES • Low Voltage, Ultra Low Power Operation - Vcc = 2.7 to 3.6 V - Icc =25 uA typical at standby - Icc = 2 mA (typical) at 1 MHz - Meets JEDEC LV Interface Spec (JESD8-A)


    OCR Scan     		PDF 22LV10AZ-25 22LV1OAZ PEEL22LV1 OAZP-25 24-pin PEEL22LV1OAZJ-25 28-pin PEEL22LV1OAZS-25 PEEL22LV1OAZT-25

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Commercial PEEL 18LV8Z-25 CMOS Programmable Electrically Erasable Logic Device FEATURES • Low Voltage, Ultra Low Power Operation - Vcc = 2.7 to 3.6 V - Icc =25 uA typical at standby - Icc = 2 mA (typical) at 1 MHz - Meets JEDEC LV Interface Spec (JESD8-A)


    OCR Scan     		PDF 18LV8Z-25 20-Pin

    CY7C1335

    Abstract: CY7C1336 DO30 3Tg 21
    Text: „ ADVANCED INFORMATION CY7C1335 CY7C1336 '# C Y P n h b b 32K x 32 Synchronous Cache RAM Features • Synchronous self-timed writes • Supports 75-MHz Pentium and PowerPC™ operations with zero wait states • Asynchronous output enable • JEDEC-standard 100 TQFP pinout


    OCR Scan     		PDF CY7C1335 CY7C1336 75-MHz 66-MHz 60-MHz CY7C1335) CY7C1336) CY7C1336 DO30 3Tg 21

    Untitled

    Abstract: No abstract text available
    Text: M I C R Q N FPM DRÂM MT4C2M8B1 MT4LC2M8B1 H R AM l^nMIVI FEATURES PIN ASSIGNMENT Top View • JEDEC- an d in d u stry -sta n d a rd x8 p in o u ts, tim ing, functions a n d packages • H igh-perform ance, low p o w er CM OS silicon-gate process • Single p o w er su p p ly (+3.3V +0.3V or 5V +10%)


    OCR Scan     		PDF 048-cycle 28-Pin

    Untitled

    Abstract: No abstract text available
    Text: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Dual Bank Extended Data Out


    OCR Scan     		PDF IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8Mx64, 8Mx72 104ns 124ns SA14-4624-04

    Untitled

    Abstract: No abstract text available
    Text: AS42C4256 883C 256K X 4 VRAM AUSTIN SEMICONDUCTOR, INC. 256K X 4 DRAM WITH 5 1 2 x 4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • MIL-STD-883 • • SC SDQ1 SDQ2 TR\-OE\ DQ1 DQ2 ME\-WE\ NC RAS\ A8 A6 A5 A4 , i [ i i i i i i [


    OCR Scan     		PDF AS42C4256 MIL-STD-883 100ns, 30ns/27ns 120ns, 35ns/35ns 30ns/25ns DS000016

    Untitled

    Abstract: No abstract text available
    Text: MT42C4256 883C 256K X 4 VRAM AUSTIN SEMICONDUCTOR, INC. Limited Supply - Consult Factory 256K X 4 DRAM WITH 512x4 SAM VRAM AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SMD 5962-89497 • MIL-STD-883 28-Pin DIP (400 MIL) FEATURES SC In d u stry sta n d ard pinout, tim ing a n d functions


    OCR Scan     		PDF MT42C4256 512x4 MIL-STD-883 28-Pin 1DDB117

    Untitled

    Abstract: No abstract text available
    Text: PR E LI M IN A R Y 2 MEG X 32 SDRAM DIMM | u iic n o N MT4LSD T 232U SDRAM MODULE FEATURES * JEDEC pinout in a 100-pin, dual in-line memory module (DIMM) * 8M B (2 Meg x 32) * Utilizes 100 MHz SDRAM components * Single +3.3V ±0.3V power supply * Fully synchronous; all signals registered on positive


    OCR Scan     		PDF 100-pin, 096-cycle 100-Pin

    Untitled

    Abstract: No abstract text available
    Text: IBM13N1649NC IBM13N1809NC 1M x 64/80 1 Bank Unbuffered SDRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 1 Mx64/80 Synchronous DRAM DIMM • Performance: CAS Latency • • • • • • -10 3 jfc K Clock Frequency


    OCR Scan     		PDF IBM13N1649NC IBM13N1809NC Mx64/80

    QML-38535

    Abstract: SMJ55166-75HKCM sq10 amplifier SMJ55166-70HKCM ASD910 5962-9564303QXA 5962-9564301QYC smd marking BH rum
    Text: REVISIONS LTR DESCRIPTION DATE APPROVED YR-MO-DA Changes in accordance with NOR 5962-R098-96. 96-04-09 M. A. Frye Changes in accordance with NOR 5962-R127-97. 96-11-19 M. A. Frye Add device type 03. Update boilerplate. Editorial changes throughout. 97-03-26


    OCR Scan     		PDF 5962-R098-96. 5962-R127-97. QML-38535 SMJ55166-75HKCM sq10 amplifier SMJ55166-70HKCM ASD910 5962-9564303QXA 5962-9564301QYC smd marking BH rum

    Untitled

    Abstract: No abstract text available
    Text: IBM13N3649JC 3M x 64 2 Bank Unbuffered SDRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 3Mx64 Synchronous DRAM DIMM • Performance: 10 CAS Latency ! fcK I Clock Frequency • • • • • • j Units j


    OCR Scan     		PDF IBM13N3649JC 3Mx64

    2SC76

    Abstract: 2n1781 2n725 L51A T03A 2SC175 2SC176 2SC177 2SC73 2SC75
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF B170024 4000n 2SC76 2n1781 2n725 L51A T03A 2SC175 2SC176 2SC177 2SC73 2SC75

    3T202

    Abstract: 25C60 2n1779 2n1780 2N1783 2T52 3N29 2SC175 2SC177 2SC73
    Text: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF 250nb 2SD63 2SD64 2SD65 2SC89Ã 2SC179t 3T202 25C60 2n1779 2n1780 2N1783 2T52 3N29 2SC175 2SC177 2SC73

    2N1103

    Abstract: 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155
    Text: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan     		PDF buy56-4 BUY56-6 buy56-10 BUY72-4 BUY72-6 BUY72-10 2N1103 2SC5220 2SA479 AC122-30 OC75N 2SC167 2SC166 2N2161 AF185 SFT155

    Untitled

    Abstract: No abstract text available
    Text: IBM11T8645HP 8M x 64 144 PIN SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses Au contacts Optimized for byte-write non-parity applications • 8Mx64 Extended Data Out SO DIMM • Performance: -50


    OCR Scan     		PDF IBM11T8645HP 8Mx64 104ns Vss/18VCc

    Untitled

    Abstract: No abstract text available
    Text: IBM11T4645MP IBM11T8645MP 4M /8M x 64 144 PIN SO DIMM Features • Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM


    OCR Scan     		PDF IBM11T4645MP IBM11T8645MP 4M/8Mx64 VSs/18VCc 104ns

    OM6025SC

    Abstract: OM6031SC ci 3900
    Text: OM6025SC OM6Û27SC OM6031SC OM6026SC OM6028SC OM6032SC POWER MOSFETS IN HERMETIC ISOLATED JEDEC TO-258AA SIZE 6 DIE 400V Thru 1000V, Up To 26 Amp N-Channel, Size 6 MOSFETs, High Energy Capability FEATURES • • • • • • Isolated Hermetic Metal Package


    OCR Scan     		PDF OM6025SC OM6031SC OM6Q26SC OM6Q28SC OM6Q32SC O-258AA MIL-S-19500, aT073 00D13ES ci 3900

    Untitled

    Abstract: No abstract text available
    Text: IBM11T4645MP IBM11T8645MP 4M /8M x 64 144 PIN SO DIMM Features • Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM


    OCR Scan     		PDF IBM11T4645MP IBM11T8645MP 4M/8Mx64 256ms