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    SC-89 EQUIVALENT Search Results

    SC-89 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    SC-89 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SB717PT SURFACE MOUNT PNP Silicon Power Transistor VOLTAGE 12 Volts CURRENT 3 Ampere FEATURE * Small flat package. SC-62/SOT-89 * Peak pulse current : 10A * Extremely low saturation voltage SC-62/SOT-89 * PC= 2.0 W * Extremely low equivalent On-resistance


    Original     		PDF 2SB717PT SC-62/SOT-89) SC-62/SOT-89 -100mA; -10mA -1000mA; -3000mA;

    2SB717GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SB717GP SURFACE MOUNT PNP Silicon Power Transistor VOLTAGE 12 Volts CURRENT 3 Ampere FEATURE * Small flat package. SC-62/SOT-89 * Peak pulse current : 10A * Extremely low saturation voltage SC-62/SOT-89 * PC= 2.0 W * Extremely low equivalent On-resistance


    Original     		PDF 2SB717GP SC-62/SOT-89) SC-62/SOT-89 -100mA; -10mA -1000mA; -3000mA; 2SB717GP

    1N916

    Abstract: LMBT3906TT1 SC-89
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LMBT3906TT1 FEATURE 3 ƽSimplifies Circuit Design. ƽThis is a Pb-Free Device. 1 2 ORDERING INFORMATION Device Package Shipping SC-89 3000/Tape&Reel LMBT3906TT1 SC-89 MAXIMUM RATINGS Symbol


    Original     		PDF LMBT3906TT1 SC-89 3000/Tape 463C-01 463C-02. LMBT3906TT1-6/6 1N916 LMBT3906TT1 SC-89

    Untitled

    Abstract: No abstract text available
    Text: BAW56T Monolithic Dual Swithcing Diode Common Anode SWITCHING DIODES 200 mAMPERES 70 VOLTS P b Lead Pb -Free Features: * We Declare that the Material of Product Compliance With RoHS Requirements SOT-523F(SC-89) SOT-523F Outline Dimensions (SC-89) Unit:mm A


    Original     		PDF BAW56T OT-523F SC-89) SC-89 50BSC 01-Aug-2013

    DG2011

    Abstract: DG2011DX-T1 HP4192A SC-89
    Text: DG2011 Vishay Siliconix Low-Voltage, Low rON, Single SPDT Analog Switch In SC-89 Package FEATURES BENEFITS D Low Voltage Operation 1.8 V to 5.5 V D Low On-Resistance - rON: 1.8 W @ 2.7 V D Low Charge Injection D Low Voltage Logic Compatible D SC-89 Package (1.6 x 1.6 mm)


    Original     		PDF DG2011 SC-89 DG2011 HP4192A S-50509--Rev. 21-Mar-05 DG2011DX-T1 HP4192A

    40106

    Abstract: 40106 internal block diagram cmos 40106 40106 data sheet DG2011 DG2011DX HP4192A SC-89 I 40106
    Text: DG2011 Vishay Siliconix Low-Voltage, Low rON, Single SPDT Analog Switch In SC-89 Package FEATURES D D D D D BENEFITS Low Voltage Operation 1.8 V to 5.5 V Low On-Resistance - rON: 1.8 W @ 2.7 V Low Charge Injection Low Voltage Logic Compatible SC-89 Package (1.6 x 1.6 mm)


    Original     		PDF DG2011 SC-89 DG2011 S-40106--Rev. 02-Feb-04 HP4192A 40106 40106 internal block diagram cmos 40106 40106 data sheet DG2011DX HP4192A I 40106

    DG2011

    Abstract: No abstract text available
    Text: DG2011 Vishay Siliconix Low-Voltage, Low rON, Single SPDT Analog Switch In SC-89 Package FEATURES BENEFITS D Low Voltage Operation 1.8 V to 5.5 V D Low On-Resistance - rON: 1.8 W @ 2.7 V D Low Charge Injection D Low Voltage Logic Compatible D SC-89 Package (1.6 x 1.6 mm)


    Original     		PDF DG2011 SC-89 DG2011 08-Apr-05

    Marking 93

    Abstract: No abstract text available
    Text: DTA143T series PNP -100mA -50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter VCEO IC R1 Value VMT3 EMT3F Collector -50V -100mA 4.7kW Base Collector Base Emitter Emitter DTA143TEB (SC-89) DTA143TM (SC-105AA) EMT3 UMT3F


    Original     		PDF DTA143T -100mA DTA143TM SC-105AA) DTA143TEB SC-89) R1120A Marking 93

    Untitled

    Abstract: No abstract text available
    Text: DTA143T series PNP -100mA -50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter VCEO IC R1 Value VMT3 EMT3F Collector -50V -100mA 4.7kW Base Collector Base Emitter Emitter DTA143TEB (SC-89) DTA143TM (SC-105AA) EMT3 UMT3F


    Original     		PDF DTA143T -100mA -100mA DTA143TEB SC-89) DTA143TM SC-105AA) R1120A

    Untitled

    Abstract: No abstract text available
    Text: DTC143T series NPN 100mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter VCEO IC R1 Value VMT3 EMT3F Collector 50V 100mA 4.7kW Base Collector Base Emitter Emitter DTC143TEB (SC-89) DTC143TM (SC-105AA) EMT3 UMT3F Collector


    Original     		PDF DTC143T 100mA DTC143TM SC-105AA) DTC143TEB SC-89) R1120A

    Untitled

    Abstract: No abstract text available
    Text: DTC143T series NPN 100mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter VCEO IC R1 Value VMT3 EMT3F Collector 50V 100mA 4.7kW Base Collector Base Emitter Emitter DTC143TEB (SC-89) DTC143TM (SC-105AA) EMT3 UMT3F Collector


    Original     		PDF DTC143T 100mA 100mA DTC143TEB SC-89) DTC143TM SC-105AA) R1120A

    Untitled

    Abstract: No abstract text available
    Text: DTC114T series NPN 100mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter VCEO IC R1 Value VMT3 EMT3F Collector 50V 100mA 10kW Base Collector Base Emitter Emitter DTC114TEB (SC-89) DTC114TM (SC-105AA) EMT3 UMT3F Collector


    Original     		PDF DTC114T 100mA 100mA DTC114TEB SC-89) DTC114TM SC-105AA) R1120A

    Untitled

    Abstract: No abstract text available
    Text: DTC114T series NPN 100mA 50V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter VCEO IC R1 Value VMT3 EMT3F Collector 50V 100mA 10kW Base Collector Base Emitter Emitter DTC114TEB (SC-89) DTC114TM (SC-105AA) EMT3 UMT3F Collector


    Original     		PDF DTC114T 100mA DTC114TM SC-105AA) DTC114TEB SC-89) R1120A

    DTA114E

    Abstract: SC-85 DTA114EUB DTA114E SERIES
    Text: DTA114E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 10k 10k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GN GN DTA114EM DTA114EEB (SC-89) (SC-105AA) EMT3 Features


    Original     		PDF DTA114E -100mA 100mA DTA114EM SC-105AA) DTA114EEB SC-89) DTA114EE OT-416 SC-75A) SC-85 DTA114EUB DTA114E SERIES

    Untitled

    Abstract: No abstract text available
    Text: DTA123J series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 2.2k 47k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN GND IN GND DTA123JM (SC-105AA) EMT3 DTA123JEB (SC-89) UMT3F


    Original     		PDF DTA123J -100mA 100mA DTA123JM SC-105AA) DTA123JEB SC-89) R1120A

    Untitled

    Abstract: No abstract text available
    Text: DTA114Y series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 10k 47k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA114YM (SC-105AA) EMT3 DTA114YEB (SC-89) UMT3F


    Original     		PDF DTA114Y -100mA 100mA DTA114YM SC-105AA) DTA114YEB SC-89) R1120A

    dta143x

    Abstract: No abstract text available
    Text: DTA143X series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 4.7k 10k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA143XM (SC-105AA) EMT3 DTA143XEB (SC-89) UMT3F


    Original     		PDF DTA143X -100mA 100mA DTA143XM SC-105AA) DTA143XEB SC-89) R1120A

    Untitled

    Abstract: No abstract text available
    Text: DTA143X series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 4.7k 10k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GND GND DTA143XM (SC-105AA) EMT3 DTA143XEB (SC-89) UMT3F


    Original     		PDF DTA143X -100mA 100mA DTA143XM SC-105AA) DTA143XEB SC-89) R1120A

    Untitled

    Abstract: No abstract text available
    Text: DTA123J series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 2.2k 47k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN GND IN GND DTA123JM (SC-105AA) EMT3 DTA123JEB (SC-89) UMT3F


    Original     		PDF DTA123J -100mA 100mA DTA123JM SC-105AA) DTA123JEB SC-89) R1120A

    Untitled

    Abstract: No abstract text available
    Text: DTA114E series Datasheet PNP -100mA -50V Digital Transistors Bias Resistor Built-in Transistors Outline Parameter Value VCC 50V 100mA 10k 10k IC(MAX.) R1 R2 VMT3 EMT3F OUT OUT IN IN GN GN DTA114EM DTA114EEB (SC-89) (SC-105AA) EMT3 Features


    Original     		PDF DTA114E -100mA 100mA DTA114EM DTA114EEB SC-89) SC-105AA) DTA114EE OT-416 SC-75A)

    XF1001-SC

    Abstract: F1001-SC XF1001-SC-0G0T 0S226 S parameters of 5.8 GHz transistor XF1001
    Text: DC-6.0 GHz 1.0W Packaged HFET F1001-SC April 2010 - Rev 05-Apr-10 Features Functional Block Diagram 46.5 dBm OIP3 @ 5.8 GHz 15.5 dB Gain @ 2 GHz 10.0 dB Gain @ 6 GHz 30.0 dBm P1dB SOT-89 Package General Description The XF1001-SC is a high linearity Hetrojunction Field Effect


    Original     		PDF F1001-SC 05-Apr-10 OT-89 XF1001-SC OT-89 F1001-SC XF1001-SC-0G0T 0S226 S parameters of 5.8 GHz transistor XF1001

    33406

    Abstract: No abstract text available
    Text: SURFBOARDS R SURFACE MOUNT TM THE BREADBOARDING MEDIUM FOR 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33406 PARTIAL LISTING DEVICE LEAD WIDTHS 1.0, 1.5, 1.6, 1.65, To Max 3.3 REV A- 10-2011 SC-75-6, SC-89, SOT-66, SOT-563, SOT-666 ACCEPTS 6 LEAD .5 mm PITCH DEVICES


    Original     		PDF IDS33406 SC-75-6, SC-89, OT-66, OT-563, OT-666 33406

    potential divider

    Abstract: DTC343T UMD2N UMT6 SC-88 FMG5 IMD14 DTC314T EMD12 EMG5 IMD16A
    Text: Digital Transistor Product Solutions www.rohm.co.uk www.rohm.co.uk Complex Digital Transistors PNP/NPN Combination Circuits Package Configuration Surface Mount Type Packages Application VMT3 EMT3 Flat lead SC-89 ‹SOT-490› Potential divider type Leak absorption type


    Original     		PDF SC-89) OT-490> SC-75A) OT-416> EMD12 UMD12N IMD14 IMD10A IMD16A SC-70) potential divider DTC343T UMD2N UMT6 SC-88 FMG5 IMD14 DTC314T EMD12 EMG5 IMD16A

    LMBT3904LT1

    Abstract: 1N916 LMBT3904TT1 SC-89 LMBT3904TT
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE LMBT3904TT1 ƽSimplifies Circuit Design. ƽThis is a Pb-Free Device. ORDERING INFORMATION Device 3 Package Shipping SC-89 3000/Tape&Reel LMBT3904TT1 1 2 MAXIMUM RATINGS Rating Symbol


    Original     		PDF LMBT3904TT1 SC-89 3000/Tape 463C-01 463C-02. LMBT3904TT1-7/7 LMBT3904LT1 1N916 LMBT3904TT1 SC-89 LMBT3904TT