DV28120T
Abstract: DV2820 DV28120 DV2805 DV28120U ARCO 0.1 Z
Text: M/ A-COH P H I I NC _ ÖS DE 1 5 ^4 2 5 0 5 OOOCmtiö " T DV28120T • DV28120U N-Channel Enhancement-Mode RF Power FETs FEATURES Package Type T 175 MHz 2 0 -3 5 V 120 W Package Type U ■ 20:1 VSWR ■ No Thermal Runaway ■ Broadband Capability ■ Class A , B, C, D, E
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5b4250S
DV28120T
DV28120U
0-35V
DV28120
DV28120T
DV2820
DV28120
DV2805
DV28120U
ARCO 0.1 Z
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J-205
Abstract: transistor j8 PH1600
Text: Afa Satellite C om m unications Power Transistor PH 1600-7.5 7.5 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing CW Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System
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PH1600-7
Sb422DS
00D12bS
J-205
transistor j8
PH1600
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T4 0450
Abstract: transistor j8
Text: Radar Pulsed Power Transistor A ß PH0404-30EL 30 Watts, 0.420-0.450 GHz, 20 ms Pulse, 20% Duty Features Outline Drawing • NPN Silicon Microwave Power Transistor •Common Base Configuration • Broadband Class C Operation • Reliable Fishbone Geometry
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PH0404-30EL
Sb42E05
Sb422DS
D001177
T4 0450
transistor j8
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pha3033
Abstract: No abstract text available
Text: A ß UHF Linear Power M o d u le PHA3033-46 46 Watts, 300-325 MHz, 16 ms Pulse, 45% Duty Features Outline Drawing • Operation 300-325 MHz • NPN Silicon Power Transistors • Military Radio Application • Class AB Operation • 60 dB ALC Control Range
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PHA3033-46
Sb422DS
013flc
pha3033
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