SB160T Search Results

Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features DO-41 -Low drop down voltage. -Metal-Semiconductor junction with guard ring -High surge current capability 1.0 25.4 Min.

Contextual Info: SB120 – SB1100 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Current Capability A B  Low Power Loss, High Efficiency  High Surge Current Capability

SB120-G

Abstract: SB145-G SB150-G SB160-G SB180-G SB1100-G
Contextual Info: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features DO-41 -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. -High surge current capability

SB1100 schottky diode

Abstract: RS-296-E SB1100 SB130 SB140 SB150 SB160 SB180 DO41
Contextual Info: SB120 – SB1100 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability

SB120-SB160

Abstract: SB130 SB140 SB150 SB160 DO41-PLASTIC
Contextual Info: SB120 - SB160 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip · Lead Free Finish, RoHS Compliant Note 3 Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability A B A

Contextual Info: SB 160T SCHOTTKY DIE SPECIFICATION General Description: 60 V 1 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage

AF9435A

Abstract: DMN5L06TK
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1128_R00 Contact Date: Implementation Date: Alert Category: Alert Type: February 13, 2009 May 14, 2009* Discrete Semiconductors End of Life EOL and Product Name Change PCN #: PCN #: 1128_Rev 00 TITLE Device EOL and Product Name Change

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

Contextual Info: SB120 - SB160 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip · Lead Free Finish, RoHS Compliant Note 3 Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability A B A

SB160

Abstract: SB120-T3 SB120-TB SB130 SB130-T3 SB140 SB150
Contextual Info: SB120 – SB160 W TE PO WE R SEM IC O ND UC TO R S 1.0A SCHOTTKY BARRIER RECTIFIER Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection High Current Capability Low Power Loss, High Efficiency High Surge Current Capability

Contextual Info: SB 160T SCHOTTKY DIE SPECIFICATION General Description: 60 V 1 A 5Standard □Low VF， ELECTRICAL CHARACTERISTICS SYM DC Blocking Voltage: Ir=1mA(for wafer form) VRRM Ir=0.5mA (for dice form) Average Rectified Forward Current IFAV Maximum Instantaneous Forward Voltage

zxczm800

Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
Contextual Info: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)

SB120-A

Contextual Info: SPICE MODELS: SB120 SB130 SB140 SB150 SB160 SB120 - SB160 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip · Lead Free Finish, RoHS Compliant Note 3 Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency