"line AMPLIFIER"
Abstract: "sat line AMPLIFIER" SAT Line Amplifier
Text: 1st IF SAT LINE AMPLIFIER AL 46 1st IF SAT signal line amplifier. APPLICATION Suitable for digital or analogue TV installations. CARACTERÍSTICAS Offers a linear response, up to 2150 MHz. Transparent for 22 KHz switching signal control. • Remote powered through the coaxial cable.
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SAT Line Amplifier
Abstract: "SAT Line Amplifier" Diplexer "line AMPLIFIER" sat F connector
Text: 1st FI SAT Line Amplifier AL 46 DISTRIBUTION COMPONENTS DESCRIPTION st Amplifies the 1 FI SAT signal. Offers a lineal response, up to 2150 MHz. Transparent for 22 KHz switching signal control. Suitable for analogue and digital TV. Remote powered throughout the coaxial cable.
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D1273
Abstract: D1273P D1273-P D1273-Q d1273q REV B 0408 KSD1273QTU
Text: KSD1273 KSD1273 High hFE, AF Power Amplifier • ”Full PAK” Package for Simplified Mounting Only by a Screw, Requires no Insulator. TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD1273
O-220F
KSD1273
KSD1273OTU
KSD1273P
KSD1273PTSTU
KSD1273PTU
KSD1273QTU
KSD1273QYDTU
D1273
D1273P
D1273-P
D1273-Q
d1273q
REV B 0408
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A709 transistor
Abstract: a709 fairchild a709 KSA709CGBU KSA709
Text: KSA709 KSA709 High Voltage Amplifier • • • • Collector-Base Voltage : VCBO= -160V Collector Power Dissipation : PC=800mW Complement to KSC1009 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base TO-92 1 1. Emitter 2. Base 3. Collector
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KSA709
-160V
800mW
KSC1009
KSA709
KSA709CGBU
KSA709CGTA
KSA709COBU
KSA709COTA
A709 transistor
a709
fairchild a709
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BC557
Abstract: transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557
Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC556/557/558/559/560
BC556,
BC559,
BC560
BC546
BC556
BC557/560
BC558/559
BC557
transistor marking bc557
BC557BTA
BC557 TRANSISTOR application
BC557BTF
information of BC557
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BC308A
Abstract: Transistor BC 308C BC307 Bc308
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage
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BC307/308/309
BC309
BC307
BC308/309
BC308
BC308A
Transistor BC 308C
BC307
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transistor 5401
Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application
Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor
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2N5401
625mW
2N5401
O-92-3
2N5401BU
2N5401CTA
2N5401NLBU
2N5401TA
2N5401TAR
transistor 5401
2N5401 fairchild
5401 transistor
transistor 2N 5401
Transistor B C 458
2n5401 application
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bc307bta
Abstract: BC307
Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage
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BC307/308/309
BC309
BC307
BC308/309
BC307
bc307bta
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BC238
Abstract: bc238a BC239 NPN transistor BC237
Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter
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BC237/238/239
BC239
BC237
BC238/239
BC238
bc238a
BC239 NPN transistor
BC237
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BC559CTA
Abstract: bc560
Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC556/557/558/559/560
BC556,
BC559,
BC560
BC546
BC556
BC557/560
BC558/559
BC559CTA
bc560
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of transistor bc558
Abstract: bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560
Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC556/557/558/559/560
BC556,
BC559,
BC560
BC546
BC556
BC557/560
BC558/559
of transistor bc558
bc558
transistor BC 458
transistor bc558 features
information of BC558
TRANSISTOR C 557 B
BC558TAR
bc560
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transistor BC 458
Abstract: transistor BC 557 BC 458 transistor
Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC556/557/558/559/560
BC556,
BC559,
BC560
BC546
BC556
BC557/560
BC558/559
transistor BC 458
transistor BC 557
BC 458 transistor
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TRANSISTOR 237b
Abstract: BC237 237B TRANSISTOR BC237CTA BC238 bc237a 2bc237
Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter
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BC237/238/239
BC239
BC237
BC238/239
TRANSISTOR 237b
BC237
237B TRANSISTOR
BC237CTA
BC238
bc237a
2bc237
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transistor cross ref
Abstract: KST13MTF
Text: KST13/14 KST13/14 Darlington Amplifier Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units V VCES VEBO
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KST13/14
OT-23
KST13
KST14
KST14
transistor cross ref
KST13MTF
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TRANSISTOR C 557 B
Abstract: bc560 transistor BC 458 Transistor B C 458 BC559 PSpice transistor BC559 transistor bc558 features BC558 PNP transistor download datasheet
Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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BC556/557/558/559/560
BC556,
BC559,
BC560
BC546
BC556
BC557/560
BC558/559
TRANSISTOR C 557 B
bc560
transistor BC 458
Transistor B C 458
BC559 PSpice
transistor BC559
transistor bc558 features
BC558 PNP transistor download datasheet
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transistor c1009
Abstract: c1009 c1009 transistor KSA709 KSC1009
Text: KSC1009 KSC1009 High Voltage Amplifier • • • • • High Collector-Base Voltage : VCBO=160V Collector Current : IC=700mA Collector Power Dissipation : PC=800mW Complement to KSA709 Suffix “-C” means Center Collector 1. Emitter 2. Collector 3. Base
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KSC1009
700mA
800mW
KSA709
KSC1009
KSC1009CYBU
KSC1009CYTA
KSC1009GBU
KSC1009GTA
transistor c1009
c1009
c1009 transistor
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s9013
Abstract: transistor TO-92 S9013 transistor s9013 s9013 transistor transistor S9013 to92 SS9013FBU S9013 TO92 SS9013 SS9013-HBU S9013 to-92
Text: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector
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SS9013
625mW)
500mA)
SS9012
SS9013
O-92-3
SS9013FBU
SS9013FTA
SS9013FTF
s9013
transistor TO-92 S9013
transistor s9013
s9013 transistor
transistor S9013 to92
S9013 TO92
SS9013-HBU
S9013 to-92
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KSD1273-Q
Abstract: No abstract text available
Text: KSD1273 KSD1273 High hFE, AF Power Amplifier • ”Full PAK” Package for Simplified Mounting Only by a Screw, Requires no Insulator. TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD1273
O-220F
KSD1273
KSD1273-Q
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KSA1015YTA
Abstract: KSA1015 KSC1815
Text: KSA1015 KSA1015 LOW FREQUENCY AMPLIFIER • Collector-Base Voltage : VCBO= -50V • Complement to KSC1815 TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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KSA1015
KSC1815
KSA1015GRBU
KSA1015GRTA
KSA1015YIUBU
KSA1015YBU
KSA1015YIUTA
KSA1015OBU
KSA1015YTA
KSA1015
KSC1815
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D882Y
Abstract: D882-y D882R TRANSISTOR D882-y KSD882YSTU D882-R
Text: KSD882 KSD882 Audio Frequency Power Amplifier Low Speed Switching • Complement to KSB772 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector- Base Voltage
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KSD882
KSB772
O-126
PW10ms,
Cycle50%
KSD882
KSD882OS
KSD882RS
KSD882YS
D882Y
D882-y
D882R
TRANSISTOR D882-y
KSD882YSTU
D882-R
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MJE180STU
Abstract: MJE180
Text: MJE180/181/182 MJE180/181/182 Low Power Audio Amplifier Low Current High Speed Switching Applications TO-126 1 NPN Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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MJE180/181/182
O-126
MJE180
MJE181
MJE182
MJE182
MJE182STU
MJE180STU
MJE180
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Untitled
Abstract: No abstract text available
Text: KSD1588 KSD1588 Low Frequency Power Amplifier • Low Speed Switching • Complement to KSB1097 1 1.Base TO-220F 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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KSD1588
KSB1097
O-220F
PW300
Cycle10%
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Untitled
Abstract: No abstract text available
Text: KSB1097 KSB1097 Low Frequency Power Amplifier • Low Speed Switchng Industrial Use • Complement to KSD1588 1 1.Base TO-220F 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage
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KSB1097
KSD1588
O-220F
PW300
Cycle10%
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Untitled
Abstract: No abstract text available
Text: NATIONAL SEMICONDUCTOR SIMPLE SWITCHER® APPLICATIONS This Series of Power Line Chokes has inductances from 100pH to 680|j H with sat uration currents available from 2.79 Amps to 0.70 Amp. The use of high saturation material make these coils ideal for use in
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100pH
RL-1950
RL-1951
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