EC4302C
Abstract: No abstract text available
Text: EC4302C Ordering number : EN7035A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4302C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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EC4302C
EN7035A
EC4302C
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7014
Abstract: EC4301C E-CSP1008-4
Text: EC4301C Ordering number : EN7014A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4301C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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EC4301C
EN7014A
7014
EC4301C
E-CSP1008-4
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EC4401C
Abstract: TA-3277
Text: EC4401C Ordering number : EN7015A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4401C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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EC4401C
EN7015A
EC4401C
TA-3277
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Untitled
Abstract: No abstract text available
Text: EC4401C Ordering number : EN7015A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4401C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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EN7015A
EC4401C
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EC4303C
Abstract: No abstract text available
Text: EC4303C Ordering number : EN7036A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4303C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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EC4303C
EN7036A
EC4303C
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EC4403C
Abstract: No abstract text available
Text: EC4403C Ordering number : EN7038A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4403C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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EC4403C
EN7038A
EC4403C
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EC4402C
Abstract: No abstract text available
Text: EC4402C Ordering number : EN7037A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EC4402C Small Signal Switch and Interface Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C
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EC4402C
EN7037A
EC4402C
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CPH6619
Abstract: No abstract text available
Text: CPH6619 Ordering number : ENA0473 SANYO Semiconductors DATA SHEET CPH6619 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • Composite type of a low on-resistance ultra-high switching P-channel MOSFET and a small signal N-channel MOSFET
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CPH6619
ENA0473
A0473-7/7
CPH6619
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VEC2601
Abstract: A0933
Text: VEC2601 Ordering number : ENA0933 SANYO Semiconductors DATA SHEET VEC2601 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving
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VEC2601
ENA0933
A0933-6/6
VEC2601
A0933
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VEC2603
Abstract: No abstract text available
Text: VEC2603 Ordering number : ENA0934 SANYO Semiconductors DATA SHEET VEC2603 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • • A composite type of a low on-resistance P-channel MOSFET and a small signal N-channel MOSFET for driving
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VEC2603
ENA0934
A0934-6/6
VEC2603
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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VS003E4
Abstract: A15201 A1520
Text: VS003E4 Ordering number : ENA1520 SANYO Semiconductors DATA SHEET VS003E4 SSPD Series Silicon Bidirectional Diode Noise clamp for signal line For low voltage, USB2.0 Features • • • • • Low voltage (4.5V), overshoot clamp. USB2.0 signal line overshoot/undershoot clamp.
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VS003E4
ENA1520
A1520-3/3
VS003E4
A15201
A1520
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VS002E4
Abstract: ECSP1608-4 USB11 marking eb
Text: VS002E4 Ordering number : ENA1251 SANYO Semiconductors DATA SHEET SSPD Series Silicon Bidirectional Diode VS002E4 Noise clamp for signal line For low voltage, USB1.1 Features • • • • • Low voltage (4.0V) , overshoot clamp. USB1.1 signal line overshoot/undershoot clamp.
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VS002E4
ENA1251
A1251-3/3
VS002E4
ECSP1608-4
USB11
marking eb
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Untitled
Abstract: No abstract text available
Text: VS003E4 Ordering number : ENA1520 SANYO Semiconductors DATA SHEET VS003E4 SSPD Series Silicon Bidirectional Diode Noise clamp for signal line For low voltage, USB2.0 Features • • • • • Low voltage (4.5V), overshoot clamp. USB2.0 signal line overshoot/undershoot clamp.
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VS003E4
ENA1520
A1520-3/3
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sbx201c
Abstract: No abstract text available
Text: SBX201C Ordering number : ENA0628B SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ Less parastic components Small forward voltage
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ENA0628B
SBX201C
013A-015
A0628-5/5
sbx201c
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1ss37
Abstract: No abstract text available
Text: smm Small-Signal High-Voltage Schottky Barri r Di odes 3 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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1SS345
1SS358
1SS350
1SS351
1SS355
1SS356
1SS375
VR-10V
7T03Q,
7T03C,
1ss37
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SB07
Abstract: sb10-05pcp
Text: SAßYO Small-Signal High-Voltage Schottky Barri er Di odes 1 Sanyo Schottky barrier diodes CS B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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O-126
T0-126ML
SB01-05Q
SB01-05CPCA)
SB05-05P
SB10-05PCP
SB20-05P
SB01-05SPA
SB05-05NP
SB20-05T
SB07
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Untitled
Abstract: No abstract text available
Text: SA0YO Smal 1-Signal High-Voltage Schottky Barrier Diodes 3 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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1SS345
1SS358
1SS35KCH)
1SS365
SS366
1SS375
MT950123TR
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sb30
Abstract: si120
Text: Smal ¡“Signal High-Voltage Schottky Barri er Di odes 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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T0-126
T0-126ML
MT980707TR
sb30
si120
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7036 ] P-Channel Silicon MOSFET EC4303C ISAf/YOi Small Signal Switch, Interface Applications Package Dimensions Features unit : mm 2197 • Low O N -resistance. ♦ U llrahigh-speed sw itching. . 4V drive. [EC4303C] 0.5 SANYO : E-CSP1008-4
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ENN7036
EC4303C
EC4303C]
E-CSP1008-4
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SB01-05QCA
Abstract: No abstract text available
Text: SA0O S m a l l - S i g n a l H i g h - V o l t a g e S c h o t t k y Barr ier Di o d e s 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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MT991116TR
SB01-05QCA
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dse010 tr e
Abstract: DS441 AL 360 DS442X DCA010 DCB010 DS446 DS462 AL200 GMA01U
Text: SAHm Q u i c k G u i d e T o Small afe. V ery F a s t Swi t o h i n g Signal Di o d e s SANYO E lectricC o., Ltd,Semiconductor Business Headquarters, TRDivision. 87 • 7 ^ 7 0 7 b 0013555 E42 ■ Diodes M T9300713TR
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DS442X
Do-35
GMA01
Do-34
GMB01
Do-34S
DS446
DS462
dse010 tr e
DS441
AL 360
DCA010
DCB010
AL200
GMA01U
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Untitled
Abstract: No abstract text available
Text: SA0YO Smal 1-Si gnal H i g h - V o l t a g e S c h o t t k y B a r r i r Di o d e s 1 Sanyo Schottky barrier diodes (S B D) have been developed by our original technology. They are available for making sets smaller in size and lighter in weight. Sanyo small-signal SBDs with breakdown voltages of 15V, 30V, 50V, 90V, 150V, and 180V can be applied to various uses.
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SB007W03Q
SB007W03C
SB02W03C
B07W03P
SB20W03P
SB007
SB02I
44-fiJ
MT950123TR
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Untitled
Abstract: No abstract text available
Text: SAfiYO Power Transistor Surface Mount Package SMP Surface Mount Power In recent years surface mount semiconductor products have found wide application from small-signal consumer equipment to high-power industrial equipment. To meet user needs, we offer Sanyo power transistor surface mount package SMP (Surface Mount Power) that makes possible
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has500V)
MT930706TR
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