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    SAMSUNG TRANSISTOR KSC2682 Search Results

    SAMSUNG TRANSISTOR KSC2682 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SAMSUNG TRANSISTOR KSC2682 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    pnp high emitter base voltage 15 volt

    Abstract: KSA1220 KSA1142 KSA1220A KSC2682 KSC2690 KSC2690A
    Text: SAMSUNG S E M I C O N D U C T O R . INC KSA1142 14E D | ?Tfc,m 42 00074^4 T PNP EPITAXIAL SILICON TRANSISTOR T ~ AUDIO FREQUENCY POWER AMPLIFIER HIGH FREQUENCY POWER AMPLIFIER 1 3 - / 7 • Complement to KSC2682 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic


    OCR Scan     		PDF KSA1142 KSC2682 -180v, KSA1220/1220A pnp high emitter base voltage 15 volt KSA1220 KSA1220A KSC2682 KSC2690 KSC2690A

    IRFDC

    Abstract: KSC2682 KSA1142 KSC2688 samsung tv R3307 audio output TRANSISTOR NPN SAMSUNG transistor ksc2682 transistor J 3305 74143
    Text: SAMSUNG SEMICONDUCTOR INC KSC2682 IME O | 7^4142 0GG7Sfc>4 4 N P N EPITAXIAL SILICO N TRAN SISTO R AUDIO FREQUENCY POWER AMPLIFIER • Complement to KSA1142 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage


    OCR Scan     		PDF KSC2682 KSA1142 O-126 Vct-30V KSC2688 IRFDC KSA1142 KSC2688 samsung tv R3307 audio output TRANSISTOR NPN SAMSUNG transistor ksc2682 transistor J 3305 74143