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    SAMSUNG MOBILE DATA SHEET Search Results

    SAMSUNG MOBILE DATA SHEET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    MP-52RJ11SNNE-100 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-100 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 100ft Datasheet

    SAMSUNG MOBILE DATA SHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSM 7227

    Abstract: S6E63D6 MSM 7230 MSM 7225 80-SYSTEM MDDI IC 7224 R68H amoled samsung AMOLED Display module
    Text: S6E63D6 Rev.1.10 MOBILE DISPLAY DRIVER IC Property of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S6E63D6 Data Sheet_REV 1.10 Mobile Display Driver IC Trademark & Copyright Information Copyright © 2007-2007 Samsung Electronics Co., Ltd. All Rights Reserved.


    Original     		PDF S6E63D6 S6E63D6 MSM 7227 MSM 7230 MSM 7225 80-SYSTEM MDDI IC 7224 R68H amoled samsung AMOLED Display module

    K4M28323PH-HG75

    Abstract: No abstract text available
    Text: K4M28323PH - F H E/G/C/F Mobile SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M28323PH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4M28323PH 32Bit 90FBGA K4M28323PHW3000 Q2/2005 Q3/2005 145KB 264KB K4M28323PH-HG1L0 K4M28323PH-HG750 K4M28323PH-HG75

    "at command" Samsung

    Abstract: samsung nor flash 555h NOR FLASH
    Text: SEC-Mobile-ROM Protection Sequence For NOR Flash Application Note Version 1.0, May 2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


    Original     		PDF 555h/AAh 2AAh/55h 555h/90h XXX/00h "at command" Samsung samsung nor flash 555h NOR FLASH

    mobile nokia circuit diagram

    Abstract: china mobile phone circuit diagram samsung mobile phone circuit diagram nokia mobile circuit schematic schematic diagram samsung led k800i nokia c1 circuit diagram W810i mobile nokia layout circuit diagram usb mp3 player circuit diagram pcb layout
    Text: AN2542 Application note Demo board BT-HTS-Rx_V1.0 for audio receiver using Bluetooth wireless technology Features ! Class 2 A2DP Bluetooth® technology receiver ! 1-Vpp line-out stereo ! Single 3.3-V supply. Overview This board is designed for the evaluation of the BT-STA2416C2 receiver module in an A2DP


    Original     		PDF AN2542 BT-STA2416C2 STA529 mobile nokia circuit diagram china mobile phone circuit diagram samsung mobile phone circuit diagram nokia mobile circuit schematic schematic diagram samsung led k800i nokia c1 circuit diagram W810i mobile nokia layout circuit diagram usb mp3 player circuit diagram pcb layout

    samsung nor flash

    Abstract: NOR FLASH internal flash corruption
    Text: Program Method of NOR Flash Version 1.0, Apr-2009 Samsung Electronics Copyright ⓒ 2009 Samsung Electronics Co.,LTD. Copyright 2009 Samsung Electronics Co, Ltd. All Rights Reserved. Though every care has been taken to ensure the accuracy of this document, Samsung


    Original     		PDF Apr-2009 80us/11 32Words 64Words samsung nor flash NOR FLASH internal flash corruption

    1. Mobile Computing block diagram

    Abstract: vhdl code for sdram controller vhdl sdram XAPP394 xilinx cross Mobile SDRAM xilinx vhdl code vhdl code for clock and data recovery XAPP393 COOLRUNNER-II examples
    Text: Application Note: CoolRunner-II CPLDs Interfacing to Mobile SDRAM with CoolRunner-II CPLDs R XAPP394 v1.1 December 1, 2003 Summary This document describes the VHDL design for interfacing CoolRunner -II CPLDs with low power Mobile SDRAM memory devices. Mobile SDRAM is the ideal memory solution for


    Original     		PDF XAPP394 Mm/bvdocs/publications/ds093 XC2C128 com/bvdocs/publications/ds094 XC2C256 com/bvdocs/publications/ds095 XC2C384 com/bvdocs/publications/ds096 XC2C512 pdf/wp165 1. Mobile Computing block diagram vhdl code for sdram controller vhdl sdram XAPP394 xilinx cross Mobile SDRAM xilinx vhdl code vhdl code for clock and data recovery XAPP393 COOLRUNNER-II examples

    S3C2443

    Abstract: LDR SPECIFICATION samsung K4 ddr S3C2443X samsung confidential s3c2443 datasheet ldr datasheet K4H511638 0x80000033 DDr memory guide
    Text: Guide for using DDR Memory S3C2443X RISC Microprocessor DEC 24, 2007 REV 1.00 Confidential Proprietary of Samsung Electronics Co., Ltd Copyright 2007 Samsung Electronics, Inc. All Rights Reserved S3C2443_DDR GUIDE REV 1.00 Important Notice The information in this publication has been carefully


    Original     		PDF S3C2443X S3C2443 16-bit S3C2443x 0x4800 LDR SPECIFICATION samsung K4 ddr samsung confidential s3c2443 datasheet ldr datasheet K4H511638 0x80000033 DDr memory guide

    Untitled

    Abstract: No abstract text available
    Text: ASL54T8 ASL54T8 Data Sheet High Gain, Low Noise Amplifier Product Overview 1.1 General Description ASL54T8 is an easy-to-use low noise, high gain and high linearity over a wide range of frequency up to 4 GHz. It is also suitable for use in the low noise amplifier block of the mobile wireless systems such as PCS,


    Original     		PDF ASL54T8 ASL54T8 20REF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    Untitled

    Abstract: No abstract text available
    Text: ASL51T8 ASL51T8 Data Sheet High Gain, Low Noise Amplifier Product Overview 1.1 General Description ASL51T8 is an easy-to-use low noise, high gain and high linearity over a wide range of frequency up to 5 GHz. It is also suitable for use in the low noise amplifier block of the mobile wireless systems such as PCS,


    Original     		PDF ASL51T8 ASL51T8 20REF

    K4X51323PC-8GC3

    Abstract: No abstract text available
    Text: Preliminary K4X51323PC - 7 8 E/G Mobile-DDR SDRAM 16M x32 Mobile-DDR SDRAM 1 Revision 0.6 October 2005 Preliminary K4X51323PC - 7(8)E/G Mobile-DDR SDRAM Document Title 16M x32 Mobile-DDR SDRAM Revision History Revision No. History Draft Date Remark 0.0 - First version for target specification


    Original     		PDF K4X51323PC 90FBGA DDR333/DDR266 DDR266/DDR222. 247KB 128KB 277KB K4X51323PC-8GC30 K4X51323PC-8GC3T K4X51323PC-8GC3

    CROSS SEIKO

    Abstract: toshiba onenand ARM1176JZ-STM Baw delay line tdk cross reference wildpasstm
    Text: February 2008 NWR150 Low Insertion Loss BAW Filter for GPS Data Sheet Revision 2.4 Communication Solutions Edition 2008-02-11 Published by Infineon Technologies AG 81726 Munich, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


    Original     		PDF NWR150 NWR150 CROSS SEIKO toshiba onenand ARM1176JZ-STM Baw delay line tdk cross reference wildpasstm

    epcos EC 90 13 O

    Abstract: DDS2004 epcos EC 90 11 O EPCOS 230 00 O EPCOS Soldering Profile BOSCH 0 280 230 001 OQA-2049 VDA 232.101 BOSCH SMD MARKING CODES samsung ltcc
    Text: SAW Components Data Sheet B7639 SAW Components B7639 836,5 / 881,5 MHz Low-Loss Filter for Mobile Communication Data Sheet Chip Sized SAW Package QCS9L 0,65 0,5 5 bottom view 9 3 • Small size and low height ■ Balanced Rx port, single ended Tx port ■ Impedance transformation from 50 Ω to 100 Ω


    Original     		PDF B7639 B7639 epcos EC 90 13 O DDS2004 epcos EC 90 11 O EPCOS 230 00 O EPCOS Soldering Profile BOSCH 0 280 230 001 OQA-2049 VDA 232.101 BOSCH SMD MARKING CODES samsung ltcc

    EPSON s21 circuit diagram

    Abstract: GL-LN-22TM ARM926EJ-S C166 JESD22-A114 JESD22-A115 NWR150 R150 bandpass filter for GPS xgoldtm
    Text: May 2008 NWR150 Low Insertion BAW Filter for GPS Data Sheet Revision 2.42 Communication Solutions Edition 2008-05-06 Published by Infineon Technologies AG 81726 Munich, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or


    Original     		PDF NWR150 NWR150 EPSON s21 circuit diagram GL-LN-22TM ARM926EJ-S C166 JESD22-A114 JESD22-A115 R150 bandpass filter for GPS xgoldtm

    Untitled

    Abstract: No abstract text available
    Text: Agilent E7460A CDMA Service Quality Analysis Systems Data Sheet The Agilent Technologies E7460A service quality analysis system is used to obtain call performance data versus location to assess the service coverage of wireless communications networks using IS-95 and J-STD-008 CDMA technologies. A PC interfaces to a CDMA mobile


    Original     		PDF E7460A E7460A IS-95 J-STD-008 5966-3850E

    emmc controller

    Abstract: Sandisk iNAND micron emmc eMMC Sandisk eMMC Sandisk iNAND eMMC 8GB eMMC SLC emmc code emmc sector size Sandisk NAND Flash memory controller ecc
    Text: Micron e-MMC Embedded Memory Simplifies High-Capacity Storage for Mobile and Embedded Systems Summary This white paper addresses the various functions NAND designers face today. It also discusses the ways that e-MMC embedded memory can provide the necessary NAND Flash functions in an easy-to-use BGA


    Original     		PDF

    MCP 67 MV- A2

    Abstract: SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density
    Text: KAA00B209M-TGxx MCP MEMORY Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/32M Bit(2Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. January 15, 2002 Advance 0.1


    Original     		PDF KAA00B209M-TGxx 16Mx16) Flash/32M 2Mx16) UtRAM/128M 2Mx16x4Banks) 127-Ball 80x12 08MAX MCP 67 MV- A2 SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density

    d449c

    Abstract: 32 inch TV samsung lcd Schematic stm diode C818 B511 N1 CK505M LE88CLPM SI2315BDS-T1 NH82801 Q527 samsung lcd tv power supply schematic
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D OSLO C B Sheet 1. Sheet 2-7. Sheet 8. Sheet 9.


    Original     		PDF BA41-# RHU002N06 d449c 32 inch TV samsung lcd Schematic stm diode C818 B511 N1 CK505M LE88CLPM SI2315BDS-T1 NH82801 Q527 samsung lcd tv power supply schematic

    LTM213U6-L01

    Abstract: V270B1-L01 LTM190E4-L02 digital visitor counter project hitachi diagram inverter 12v 5v 3.3v 24v mechanical engineering projects free M190EN03 lg vga cable T260XW02 T296XW01
    Text: Table of Contents Contents. REFERENCE Section Introductions 2 Applications Overview 4 About Digital View 3 System Application Requirements 5 Custom Engineering Services 6 Online Resources - The Controller Solution Generator 7 Digital View Controller Comparison


    Original     		PDF AVP-1600 ALR-1400 SP-1600 DVS-1600 SVX-1920 SVH-1920 DVI-2560 VF-076OF VF-080OF VF-100WOF LTM213U6-L01 V270B1-L01 LTM190E4-L02 digital visitor counter project hitachi diagram inverter 12v 5v 3.3v 24v mechanical engineering projects free M190EN03 lg vga cable T260XW02 T296XW01

    K4X1G323PE

    Abstract: K4X1G323PC DDR RAM 512M UPD77630A SWITCH L3 uPD77630 BTB6 0x00000001 K4X1G323 1g bits ddr mobile ram
    Text: Mobile Multimedia Processor Technical Information IMB – YB2 – 000585 Document No. EMMA Mobile TM 1 1/13 Oct 23rd. ,2009 Date issued Mobile Platform Group MC-10118A PD77630A SoC Systems Division Usage Restrictions Issued by nd 2 SoC Operations Unit


    Original     		PDF MC-10118APD77630A) S19598E, S19687E S19657E, S19686E MC-10118A, PD77630A uPD77630A 0x0000007F K4X1G323PE K4X1G323PC DDR RAM 512M SWITCH L3 uPD77630 BTB6 0x00000001 K4X1G323 1g bits ddr mobile ram

    nand flash 512M

    Abstract: K5D1G K5D1G13KCM-D075 4Mx32x4banks SAMSUNG MCP 14X14mm K5D1G13 SAMSUNG 512Mb NAND Flash Qualification Report
    Text: Target MCP MEMORY K5D1G13KCM-D075 MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K5D1G13KCM-D075 512Mb 119-Ball nand flash 512M K5D1G K5D1G13KCM-D075 4Mx32x4banks SAMSUNG MCP 14X14mm K5D1G13 SAMSUNG 512Mb NAND Flash Qualification Report

    MCP 67 MV- A2

    Abstract: K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a
    Text: Target K5D1G13ACD-D075 MCP MEMORY MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K5D1G13ACD-D075 512Mb K5D1G13ACD-D075000 SG2002063-01 MCP 67 MV- A2 K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a

    qualcomm nand

    Abstract: KBE00500AM-D437 SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability
    Text: Target MCP MEMORY KBE00500AM-D437 MCP Specification 1Gb NAND Flash Memory * 2 + 512Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF KBE00500AM-D437 512Mb KBE00500AM-D437 SG2002063-01 qualcomm nand SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability

    date code marking samsung transistor

    Abstract: "MATERIAL DECLARATION SHEET" samsung Tray Tape MATERIALS DECLARATION SAMSUNG
    Text: K1S64161CC UtRAM Document Title 4Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Advanced 0.1 Revised - Filled out ICC2 and ISB1 value ICC2 max : 40mA


    Original     		PDF K1S64161CC 4Mx16 Q4/2004 Q2/2007 Q3/2007 205KB K1S64161CC-BI700 K1S64161CC-BI70T K1S64161CC-W3000 date code marking samsung transistor "MATERIAL DECLARATION SHEET" samsung Tray Tape MATERIALS DECLARATION SAMSUNG