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    SAMSUNG 900MHZ RF UNIT Search Results

    SAMSUNG 900MHZ RF UNIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMPM4GQF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GRF20FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4KMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4MMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4NQF10FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation

    SAMSUNG 900MHZ RF UNIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF module 900MHz samsung

    Abstract: Samsung rf module 900mhz RU0914 marking D9 Samsung 900mhz rf unit 900MHZ 4 channel rf module Samsung Electro-Mechanics RF MODULE audio power module class h
    Text: RF Module - Analog Module - RF Module - Analog Module • INTRODUCTION SAMSUNG Electro-mechanics has two kinds of Analog RF Modules ; 900MHz and 400MHz. 900MHz RF Module is for 900MHz frequency band cordless telephone. As FULL-DUPLEX system FULL-DUPLEX data transmission means that data can be transmitted in both directions on a


    Original     		PDF 900MHz 400MHz. 25KHz 400MHz HP8920x V/650mA) HP8920x RF module 900MHz samsung Samsung rf module 900mhz RU0914 marking D9 Samsung 900mhz rf unit 4 channel rf module Samsung Electro-Mechanics RF MODULE audio power module class h

    RF Module 900MHz CLP

    Abstract: Samsung rf module Desire S RF module 900MHz samsung Samsung Electro-Mechanics 16D-13
    Text: SA MS UNG E LEC TR O-M EC HAN IC S RF MODULE 900MHz CLP APPLICATION : CT-R HAND SAMSUNG ELECTRO-MECHANICS CO., LTD. ADDRESS : 314,MAETAN-DONG,SUWONSI,KYUNGKI - DO,KOREA TEL : 82-331- 210 - 6945 FAX : 82-331- 210 - 6554 SA MS UNG E LEC TR O-M EC HAN IC S 1. DESCR IPTIO N


    Original     		PDF 900MHz 400EA RF Module 900MHz CLP Samsung rf module Desire S RF module 900MHz samsung Samsung Electro-Mechanics 16D-13

    RF Module 900MHz CLP

    Abstract: Samsung Electro-Mechanics Samsung rf module RX-21 Samsung rf module 900mhz
    Text: SA MS UNG E LEC TR O-M EC HAN IC S RF MODULE 900MHz CLP APPLICATION : CT-R BASE SAMSUNG ELECTRO-MECHANICS CO., LTD. ADDRESS : 314,MAETAN-DONG,SUWONSI,KYUNGKI - DO,KOREA TEL : 82-331- 210 - 6945 FAX : 82-331- 210 - 6554 SA MS UNG E LEC TR O-M EC HAN IC S 1. DESCR IPTIO N


    Original     		PDF 900MHz 400EA RF Module 900MHz CLP Samsung Electro-Mechanics Samsung rf module RX-21 Samsung rf module 900mhz

    Samsung Electro-Mechanics

    Abstract: Samsung rf module RF Module 900MHz CLP
    Text: SA MS UNG E LEC TR O-M EC HAN IC S RF MODULE 900MHz CLP APPLICATION : CT-1 HAND SAMSUNG ELECTRO-MECHANICS CO., LTD. ADDRESS : 314,MAETAN-DONG,SUWONSI,KYUNGKI - DO,KOREA TEL : 82-331- 210 - 6945 FAX : 82-331- 210 - 6554 SA MS UNG E LEC TR O-M EC HAN IC S 1. DESCR IPTIO N


    Original     		PDF 900MHz 400EA Samsung Electro-Mechanics Samsung rf module RF Module 900MHz CLP

    Samsung Electro-Mechanics

    Abstract: RX-21
    Text: SA MS UNG E LEC TR O-M EC HAN IC S RF MODULE 900MHz CLP APPLICATION : CT-1 BASE SAMSUNG ELECTRO-MECHANICS CO., LTD. ADDRESS : 314,MAETAN-DONG,SUWONSI,KYUNGKI - DO,KOREA TEL : 82-331- 210 - 6945 FAX : 82-331- 210 - 6554 SA MS UNG E LEC TR O-M EC HAN IC S 1. DESCR IPTIO N


    Original     		PDF 900MHz 400EA Samsung Electro-Mechanics RX-21

    HP8920A

    Abstract: Samsung Electro-Mechanics 15MHZ 900MHZ
    Text: DATE : 2000.05.23 S P E CI F I C A T I ON PRODUCT : RF UNIT MODEL NAM E : R U 0 9 0 3 B 1 4 H A B A PP RO VED CH EC KE D WR IT TE N SAMSUNG ELECTRO-MECHANICS CO., LTD. ADDRESS : 314,MAETAN-DONG,SUWONSI,KYUNGKI - DO,KOREA TEL : 82-331- 210 - 6945 FAX : 82-331- 210 - 6554


    Original     		PDF 900MHZ 200KHZ HP8920A Samsung Electro-Mechanics 15MHZ

    HP8920A

    Abstract: Samsung Electro-Mechanics 15MHZ 900MHZ Samsung rf module 900mhz
    Text: DATE : 2000.05.23 S P E CI F I C A T I ON PRODUCT : RF UNIT MODEL NAM E : R U 0 9 2 7 H 1 4 H A B A PP RO VED CH EC KE D WR IT TE N SAMSUNG ELECTRO-MECHANICS CO., LTD. ADDRESS : 314,MAETAN-DONG,SUWONSI,KYUNGKI - DO,KOREA TEL : 82-331- 210 - 6945 FAX : 82-331- 210 - 6554


    Original     		PDF 900MHZ 200KHZ HP8920A Samsung Electro-Mechanics 15MHZ Samsung rf module 900mhz

    SGA8343z

    Abstract: SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz SGA-8343Z CL10B104K MCR03*J100 MCR03J242 MCR03J620 MCR03J SOT343 lna ROHM TRACE CODE ROHM trace code of lot

    samsung bluetooth

    Abstract: SGA8343Z SGA-8343 MCR03*J102 CL10B104KONC SGA-8343Z 8343
    Text: SGA-8343 Z SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to


    Original     		PDF SGA-8343 OT-343 SGA8343ZPCK-EVB2 SGA8343ZPCK-EVB3 SGA8343ZPCK-EVB4 DS100111 samsung bluetooth SGA8343Z MCR03*J102 CL10B104KONC SGA-8343Z 8343

    SGA8343Z

    Abstract: MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS100909 SGA8343Z-EVB4 1575MHz MCR03*J102 SGA8343ZSR SGA-8343Z EVB1 1608-FS3N9S lot code RFMD MCH185A150J MCR03J5R1 toko 10k series

    SGA-8343Z

    Abstract: samsung cl SGA8343Z SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343ZLow SGA8343Z OT-343 SGA8343Z DS110205 SGA8343Z-EVB4 1575MHz SGA-8343Z samsung cl SOT343 lna MICROWAVE DEVICES GaAs pHEMT LOW SOT-343

    Samsung rf module

    Abstract: HP8920A Samsung rf module 900mhz parametric audio -digital 900MHZ RF module 900MHz samsung Date of manufacture SAMSUNG RU0902B14HAC RU0902
    Text: DATE : 2000.08.16 S P E CI F I C A T I ON S PRODUCT : RF UNIT MODEL NAM E : R U 0 9 2 6 H 1 4 H A C RU0902B14HAC A PP RO VED CH EC KE D WR IT TE N SAMSUNG ELECTRO-MECHANICS CO., LTD. ADDRESS : 314,MAETAN-DONG,SUWONSI,KYUNGKI - DO,KOREA TEL : 82 - 31 - 210 - 6945


    Original     		PDF RU0902B14HAC 900MHZ 200KHZ Samsung rf module HP8920A Samsung rf module 900mhz parametric audio -digital RF module 900MHz samsung Date of manufacture SAMSUNG RU0902B14HAC RU0902

    Untitled

    Abstract: No abstract text available
    Text: SGA8343Z SGA8343ZLow Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-343 Product Description Features RFMD’s SGA8343Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT designed for operation from DC to


    Original     		PDF SGA8343Z SGA8343ZLow OT-343 SGA8343Z DS110620 SGA8343Z-EVB4 1575MHz

    CL10B103KBNC

    Abstract: LL1608-FS27NJ ML200C SGL-0163 RF Identification Devices RFID
    Text: SGL-0163 Z SGL-0163(Z) 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features


    Original     		PDF SGL-0163 100MHz 1300MHz OT-363 800MHz 1300MHz 900MHz CL10B103KBNC LL1608-FS27NJ ML200C RF Identification Devices RFID

    CL10B103KBNC

    Abstract: No abstract text available
    Text: SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier


    Original     		PDF SGL0163Z 100MHz 1300MHz OT-363 SGL0163Z 50GHz. CL10B103KBNC

    CL10B103KBNC

    Abstract: 0163Z CL10B103KB LL1608-FS27NJ ML200C SGL-0163 PHILLIPS 9C06031A0R00 MMIC SOT 363 marking CODE h trace code marking RFMD
    Text: SGL-0163 Z SGL-0163(Z) 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-363 Product Description Features


    Original     		PDF SGL-0163 100MHz 1300MHz OT-363 800MHz 1300MHz 900MHz CL10B103KBNC 0163Z CL10B103KB LL1608-FS27NJ ML200C PHILLIPS 9C06031A0R00 MMIC SOT 363 marking CODE h trace code marking RFMD

    BLM18HE152SN1D

    Abstract: CL10B103KBNC SGL0163Z 800130 SGL-0163 HEMT MMIC POWER AMPLIFIER MMIC SOT 363 marking CODE 81 marking CODE 81 MMIC SOT 363 68 S3V MMIC SOT 363 marking CODE 81 low noise
    Text: SGL0163Z SGL0163Z 100MHz to 1300MHz Silicon Germanium Cascadable Low Noise Amplifier 100MHz to 1300MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER Package: SOT-363 Product Description Features The SGL0163Z is a high performance SiGe HBT MMIC low noise amplifier


    Original     		PDF SGL0163Z 100MHz 1300MHz OT-363 SGL0163Z 50GHz. BLM18HE152SN1D CL10B103KBNC 800130 SGL-0163 HEMT MMIC POWER AMPLIFIER MMIC SOT 363 marking CODE 81 marking CODE 81 MMIC SOT 363 68 S3V MMIC SOT 363 marking CODE 81 low noise

    Samsung ru0926h18hkc

    Abstract: RU0926H18HKC ru0926h18 74188 Samsung rf module 900mhz 314 936 CH10 CH11 HP8920A Samsung rf module
    Text: DATE : 1999. S P E C I F I C A T I O N PRODUCT : RF UNIT MODEL NAME : RU0926H18HKC APPROVED CHECKED WRITTEN SAMSUNG ELECTRO-MECHANICS CO., LTD. ● Head Office & Sales Dept. 314, Maetan 3 Dong, Paldal-Ku, Suwon, Kyungki-Do, Korea ● Hongkong Office 65/F, Central Plaza, 18Harbour Road


    Original     		PDF RU0926H18HKC 18Harbour RU0926H18HKC 900MHz 50KHz Samsung ru0926h18hkc ru0926h18 74188 Samsung rf module 900mhz 314 936 CH10 CH11 HP8920A Samsung rf module

    RU0902B18HKB

    Abstract: Samsung rf module RU0902 B 892 s transistor B 892 CH10 CH11 HP8920A 90295 Samsung rf module 900mhz
    Text: DATE : 1999. S P E C I F I C A T I O N PRODUCT : RF UNIT MODEL NAME : RU0902B18HKB APPROVED CHECKED WRITTEN SAMSUNG ELECTRO-MECHANICS CO., LTD. ● Head Office & Sales Dept. 314, Maetan 3 Dong, Paldal-Ku, Suwon, Kyungki-Do, Korea ● Hongkong Office 65/F, Central Plaza, 18Harbour Road


    Original     		PDF RU0902B18HKB 18Harbour RU0902B18HKB 900MHz 50KHz Samsung rf module RU0902 B 892 s transistor B 892 CH10 CH11 HP8920A 90295 Samsung rf module 900mhz

    SMD MARKING CODE zener diode 501

    Abstract: AT86RF212B-ZU LT08AD4303F XTL551150NLE-16 AT86RF212B SMD marking code atmel LT08AD4303C panasonic inverter 700 manual HISTORY OF Wireless Electronic Notice Board RC1005F
    Text: APPLICATION NOTE AT02876: Atmel REB212BSMA Hardware User Manual Atmel MCU Wireless This manual describes the REB212BSMA radio extender board, demonstrating the high performance at ultra-low power consumption of the Atmel AT86RF212B radio transceiver. Features


    Original     		PDF AT02876: REB212BSMA AT86RF212B 700/800/900MHz, 121dB 2097A-WIRELESS-04/2013 SMD MARKING CODE zener diode 501 AT86RF212B-ZU LT08AD4303F XTL551150NLE-16 SMD marking code atmel LT08AD4303C panasonic inverter 700 manual HISTORY OF Wireless Electronic Notice Board RC1005F

    S3F833BXZZ-QX8B

    Abstract: S3F84NBXZZ-QT8B s3f84k4xzz-dk94 S3F828BXZZ-QW8B S3F84B8XZZ-DK98 S3F833BXZZ S3F84VBXZZ-QT8B S3F8289XZZ-QW89 S3F84K4XZZ S3F828BXZZ-TW8B
    Text: Dec. 2009 MCU/EEPROM Selection Guide - Samsung MCU Product Line-up - 4-bit Microcontroller - 8-bit Microcontroller - 16-bit Microcontroller - 32-bit Microcontroller - Serial EEPROM - EOL List - MCU Product Numbering Guide - Samsung MCU Tool Guide PAGE 2 Samsung MCU Product Line-up


    Original     		PDF 16-bit 32-bit F80K5 F80P5* F94C8* F84P4 F9444 F80M4 F84C4 F84K4 S3F833BXZZ-QX8B S3F84NBXZZ-QT8B s3f84k4xzz-dk94 S3F828BXZZ-QW8B S3F84B8XZZ-DK98 S3F833BXZZ S3F84VBXZZ-QT8B S3F8289XZZ-QW89 S3F84K4XZZ S3F828BXZZ-TW8B

    MCD2926

    Abstract: MCD8825B GP214D TB31202 TB31202 "pin compatible" S1T8825 mcd8825 566 VCO CP12 CP21
    Text: MC Devices General Description Features The MCD8825B is a high performance dual frequency synthesizer with RF operation frequency from 200MHz to 1.3GHz. The MCD8825B contains two dual modulus prescalers, three programmable counters, one crystal oscillator, two phase detectors, two


    Original     		PDF MCD8825B 200MHz 1300MHz MCD2926 GP214D TB31202 TB31202 "pin compatible" S1T8825 mcd8825 566 VCO CP12 CP21

    C1070

    Abstract: KSC1070 18d8 RF tuner 900MHz samsung tv samsung tv tuner
    Text: SAMSUNG SEMICONDUCTOR INC KSC1070 1 /1070 (2) 14E D | 71k4m 2 QQGbflTQ b | T ~ 3 / '- NPN EPITAXIAL SILICON TRANSISTOR UHF TV TUNER RF AMPLIFIERLIFIER, MIXER D IS K TR DISK MOLD HIGH PQ, LOW NF (PG: 18d8, NF: 2.8dB, @900MHz) ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


    OCR Scan     		PDF KSC1070 900MHz) T-31-15 470pF 25x5x0 C1070 KSC1070 18d8 RF tuner 900MHz samsung tv samsung tv tuner

    I12C

    Abstract: KSC2758 samsung tuner
    Text: SAMSUNG SEM ICON D UCTOR . INC KSC2758 14E D | T 'lb M m a OOObTSS fl | NPN EPITAXIAL SILICO N TRANSISTOR ' RF. MIXER FOR UHF TUNER T-31-15 SO T-23 • HIGH POWER GAIN TYP. 17d8 • LOW NF TYP. 2.8dB ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Colector-Base Voltage


    OCR Scan     		PDF 71b4ma KSC2758 T-31-15 OT-23 600MH 400MHz I12C samsung tuner