SAMSUNG 2012 Search Results
SAMSUNG 2012 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MD28F020-12/B |
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Replacement for Intel part number MD28F020-12. Buy from authorized manufacturer Rochester Electronics. | |||
MD28F020-12/R |
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28F020 - 256K X 8 Flash, Mil Temp | |||
20121C00BD |
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Elite Backplane connectors, BMA 12pair, 8position, NiS | |||
ME3220-123KLB |
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General Purpose Inductor, 12uH, 10%, 1 Element, Ferrite-Core, SMD, 1211, ROHS COMPLIANT | |||
SER2012-681MLD |
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General Purpose Inductor, 0.68uH, 20%, 1 Element, Ferrite-Core, SMD, 7674, ROHS COMPLIANT |
SAMSUNG 2012 Datasheets Context Search
Catalog Datasheet | MFG & Type | Document Tags | |
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Untitled
Abstract: No abstract text available
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RC2012F* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min | |
Untitled
Abstract: No abstract text available
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RC2012G* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min | |
S3FM02G
Abstract: No abstract text available
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S3FM02G 32-Bit S3FM02G S3FM02G. 128-ETQFP-1414 128-ETQFP-1414 128ETQFP-1414 | |
Untitled
Abstract: No abstract text available
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TCSCS0J336MPAR 10sec. | |
chip resistor 2012
Abstract: samsung 2012
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RC2012J* 10seconds 100cycles, /30min 125/30min 000hours 90min 30min chip resistor 2012 samsung 2012 | |
Untitled
Abstract: No abstract text available
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S3FM02G 32-Bit S3FM02G S3FM02G. 128-ETQFP-1414 128-ETQFP-1414 128ETQFP-1414 | |
MMZ1608S121AT
Abstract: nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2
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945GMS BA41-00680A BA41-00683A Pag614 TP18615 TP18616 TP18617 TP18618 TP18619 TP18620 MMZ1608S121AT nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2 | |
Q514
Abstract: du508 Samsung ddr2 MIC500 EMI502 BA59-01869A BA09-00009A samsung hd50 d4.0 34C1 mx25l8005m2c-15g
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945GMS BA41-00680A BA41-00683A TP18615 TP18616 TP18617 TP18618 TP18619 TP18620 TP18621 Q514 du508 Samsung ddr2 MIC500 EMI502 BA59-01869A BA09-00009A samsung hd50 d4.0 34C1 mx25l8005m2c-15g | |
ST T4 D560
Abstract: ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4
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YONAH667 Sheet18. Sheet19. Sheet20 Sheet24. Sheet25 Sheet29. Sheet30 Sheet32. Sheet33. ST T4 D560 ST D560 T4 ST 1803 DHI B-566 u574 j5512 46d1 BA09-00009A SAMSUNG GDDR3 54B4 | |
c945 g 528
Abstract: RX781M smd diode ae c604 SLG8SP628VTR 88E8057 RX781 SB700 slg8sp628v 22p smd H8S-2110B
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ALC272 Sheet46 Sheet47 Sheet48 Sheet49 sheet12] Sheet50 c945 g 528 RX781M smd diode ae c604 SLG8SP628VTR 88E8057 RX781 SB700 slg8sp628v 22p smd H8S-2110B | |
AES2501
Abstract: ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip
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CONTROLLERP1311 TP1312 TP1313 TP1314 TP1251 TP1252 TP1253 TP1254 TP1255 TP1256 AES2501 ICS954305 TP960 C703 diode tp1332 VDD3310 TP950 33B3 diode DEBUG32 block diagram of intel 8254 chip | |
MEC1308-NU
Abstract: APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308
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VDD18 BA41-xxxxxxA MEC1308-NU APW7141QAITRG AMD CPU S1g3 rx881 RX881M DIODE SMD AE22 TPS51125 N25 3KV SEC APW7141 mec1308 | |
Untitled
Abstract: No abstract text available
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SPSWH1S16S2G SPSWH1S16S2G) | |
Untitled
Abstract: No abstract text available
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SPSWH2S25S3G SPSWH2S25S3G) | |
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B30C300
Abstract: 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD
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BA41-00574A YONAH667 Sheet18. Sheet19. 047nF RHU002N06 12-C4 B30C300 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD | |
BA41-00695A
Abstract: TP1274 CONN-50P-FPC Socket AM2 samsung 30 pin lvds diagram 25a44 SMD AC P27 CY28447 samsung electronics ba41 GND103
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BA41-00694A BA41-00695A YONAH667 047nF RHU002N06 12-C4 TP1274 CONN-50P-FPC Socket AM2 samsung 30 pin lvds diagram 25a44 SMD AC P27 CY28447 samsung electronics ba41 GND103 | |
Untitled
Abstract: No abstract text available
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SPSWH2S26S2G SPSWH2S26S2G) | |
K4X2G323PD8GD8
Abstract: K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03
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BR-12-ALL-001 K4X2G323PD8GD8 K9HFGY8S5A-HCK0 K4H511638JLCCC samsung eMMC 5.0 KLMBG4GE2A-A001 K9K8G08U0D-SIB0 K4X51163PK-FGD8 KLMAG2GE4A k4h561638n-lccc K4G10325FG-HC03 | |
Untitled
Abstract: No abstract text available
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TCSHS0J226MPAR Perfo150% 10sec. | |
88E8057
Abstract: M82-SCE-XT BA41-00XXXA HDR-10P-1R-SMD RX781M 11070 J2 HDR-4P-1R-SMD R5538 SI2315BDS-T1 U528
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RX781M SB700 BA41-00XXXA DISCLOSsheet31] heet32 sheet32] heet33 sheet33] heet34 sheet34] 88E8057 M82-SCE-XT BA41-00XXXA HDR-10P-1R-SMD RX781M 11070 J2 HDR-4P-1R-SMD R5538 SI2315BDS-T1 U528 | |
samsung ddr3 ram MTBF
Abstract: KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd
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BR-12-ALL-001 samsung ddr3 ram MTBF KLM2G1HE3F-B001 KLM4G1FE3B-B001 KLMAG2GE4A-A001 k4B2G1646 KLMAG KLM8G2FE3B-B001 K4B2G0446 klm8g k4x2g323pd | |
S3FN60D
Abstract: S3FN60D_UM_REV1.30
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S3FN60D 32-bit S3FN60D 64-pin S3FN60D_UM_REV1.30 | |
Untitled
Abstract: No abstract text available
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SPFCW04301BL | |
Untitled
Abstract: No abstract text available
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SPFCW14311BD elcyc1/srh42 Am003 |