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    SA360 Search Results

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    SiT9005AC-21-33SA3.600000 SiTime 1 to 141 MHz, Spread-spectrum Oscillator Datasheet
    SF Impression Pixel

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    Essentra Components LCBSA-3-6-01

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    SA360 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SA3600 Philips Semiconductors Low voltage dual-band RF front-end Original PDF
    SA3600 Philips Semiconductors Low voltage dual-band RF front-end Original PDF
    SA3600DH Philips Semiconductors Low voltage dual-band RF front-end Original PDF
    SA3600DH Philips Semiconductors Low voltage dual-band RF front-end Original PDF
    SA3600DH-T Philips Semiconductors RF ICs, Low voltage dual-band RF front-end Original PDF
    SA3601 Philips Semiconductors Low voltage dual-band RF front-end Original PDF
    SA3601W Philips Semiconductors Low voltage dual-band RF front-end Original PDF
    SA3603 Philips Semiconductors Cellular-band low voltage front-end Original PDF
    SA3603DH Philips Semiconductors Cellular-Band Low Voltage Front-End Original PDF
    SA3604 Philips Semiconductors PCS-band low voltage front-end Original PDF
    SA3604DH Philips Semiconductors PCS-band low voltage front-end Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS SA3600 Low voltage dual-band RF front-end Product specification Supersedes data of 1999 March 18 Philips Semiconductors 1999 Nov 02 Philips Semiconductors Product specification Low voltage dual-band RF front-end SA3600 DESCRIPTION APPLICATIONS


    Original     		PDF SA3600 SA3600 02-Nov-99

    8694M

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS SA3600 Low voltage dual-band RF front-end Product specification Supersedes data of 1999 March 18 Philips Semiconductors 1999 Nov 02 Philips Semiconductors Product specification Low voltage dual-band RF front-end SA3600 DESCRIPTION APPLICATIONS


    Original     		PDF SA3600 SA3600 OT355-1 TSSOP24) images/sa3600dh 8694M

    x band receiver

    Abstract: BCC32 SA3601
    Text: INTEGRATED CIRCUITS SA3601 Low voltage dual-band RF front-end Preliminary specification Philips Semiconductors 1999 Nov 09 Philips Semiconductors Preliminary specification Low voltage dual-band RF front-end SA3601 DESCRIPTION APPLICATIONS • 800 to 1000 MHz analog and digital receivers


    Original     		PDF SA3601 SA3601 x band receiver BCC32

    SA3600

    Abstract: TSSOP24 LNA Mixer VCO 2.4 GHz
    Text: INTEGRATED CIRCUITS SA3600 Low voltage dual-band RF front-end Preliminary specification Philips Semiconductors 1999 Mar 18 Philips Semiconductors Preliminary specification Low voltage dual-band RF front-end SA3600 DESCRIPTION APPLICATIONS The SA3600 is an integrated dual-band RF front-end that operates


    Original     		PDF SA3600 SA3600 10cuits, TSSOP24 LNA Mixer VCO 2.4 GHz

    IS-136

    Abstract: SA3604 TSSOP16
    Text: INTEGRATED CIRCUITS SA3604 PCS-band low voltage front-end Preliminary specification IC17 Data Handbook Philips Semiconductors 1999 Dec 14 Philips Semiconductors Preliminary specification PCS-band low voltage front-end SA3604 DESCRIPTION PIN CONFIGURATION The SA3604 is an integrated Low-Noise Amplifier LNA and mixer


    Original     		PDF SA3604 SA3604 IS-136 TSSOP16

    SA3601

    Abstract: SA3601W
    Text: INTEGRATED CIRCUITS SA3601 Low voltage dual-band RF front-end Product specification Supersedes data of 1999 Nov 09 Philips Semiconductors 2001 Feb 20 Philips Semiconductors Product specification Low voltage dual-band RF front-end SA3601 DESCRIPTION APPLICATIONS


    Original     		PDF SA3601 SA3601 SA3601W

    IS-136

    Abstract: SA3603 TSSOP16
    Text: INTEGRATED CIRCUITS SA3603 Cellular-band low voltage front-end Preliminary specification IC17 Data Handbook Philips Semiconductors 1999 Dec 17 Philips Semiconductors Preliminary specification Cellular-band low voltage front-end SA3603 DESCRIPTION PIN CONFIGURATION


    Original     		PDF SA3603 SA3603 IS-136 TSSOP16

    TSSOP24

    Abstract: SA3600 FT-X1
    Text: INTEGRATED CIRCUITS SA3600 Low voltage dual-band RF front-end Preliminary specification Philips Semiconductors 1999 Mar 18 Philips Semiconductors Preliminary specification Low voltage dual-band RF front-end SA3600 DESCRIPTION APPLICATIONS The SA3600 is an integrated dual-band RF front-end that operates


    Original     		PDF SA3600 SA3600 TSSOP24 FT-X1

    SA3600

    Abstract: TSSOP24 70 GHz frequency doubler 19-50HB PD123
    Text: INTEGRATED CIRCUITS SA3600 Low voltage dual-band RF front-end Product specification Supersedes data of 1999 March 18 Philips Semiconductors 1999 Nov 02 Philips Semiconductors Product specification Low voltage dual-band RF front-end SA3600 DESCRIPTION APPLICATIONS


    Original     		PDF SA3600 SA3600 TSSOP24 70 GHz frequency doubler 19-50HB PD123

    SA452

    Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871
    Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this


    Original     		PDF Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


    Original     		PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11

    asme SA388

    Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
    Text: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ


    Original     		PDF S29GL-M S29GL256MS29GL128MS29GL064MS29GL032M S29GL128MS29GL128N S29GL256MS29GL256N S29GLxxxN 00-B-5 S29GL032M LAA064 asme SA388 gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63

    120R

    Abstract: C8800
    Text: Am29LV2562M Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29LV2562M 120R C8800

    l256mh113

    Abstract: L256ML123R
    Text: Am29LV256M Data Sheet September 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


    Original     		PDF Am29LV256M l256mh113 L256ML123R

    L256MH113R

    Abstract: L256ML113R
    Text: Am29LV256M Data Sheet -XO\  7KH IROORZLQJ GRFXPHQW VSHFLILHV 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ LQDOO\ GHYHORSHG WKH VSHFLILFDWLRQ WKHVH SURGXFWV ZLOO EH RIIHUHG WR FXVWRPHUV RI ERWK $0' DQG


    Original     		PDF Am29LV256M L256MH113R L256ML113R

    Untitled

    Abstract: No abstract text available
    Text: S29NS-P MirrorBit Flash Family S29NS512P, S29NS256P, S29NS128P 512/256/128 Mb 32/16/8 M x 16 bit , 1.8V Burst Simultaneous Read/Write, Multiplexed MirrorBit Flash Memory Data Sheet S29NS-P MirrorBit® Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S29NS-P S29NS512P, S29NS256P, S29NS128P

    a22t

    Abstract: S19G S29GL-N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


    Original     		PDF S29GL-N S29GL512N, S29GL256N, S29GL128N a22t S19G

    S29GL-N

    Abstract: 1E300
    Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this


    Original     		PDF S29GL512/256/128N S29GL512N, S29GL256N, S29GL128N S29GL-N 1E300

    s29gl032m10tair

    Abstract: No abstract text available
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics


    Original     		PDF S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte BGA-80P-M02 s29gl032m10tair

    S70GL01GN00

    Abstract: S29GL01GP S29GL512N
    Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP


    Original     		PDF S70GL01GN00 S70GL01GN S29GL01GP S29GL01GP S29GL512N

    SA293

    Abstract: SA273 988000
    Text: DATASHEET Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


    Original     		PDF Am29LV256M 16-Bit/32 16-word/32-byte 56-pi SA293 SA273 988000

    L256ML

    Abstract: SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110
    Text: ADVANCE INFORMATION Am29LV256M 256 Megabit 16 M x 16-Bit/32 M x 8-Bit MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 volt read, erase, and program operations


    Original     		PDF Am29LV256M 16-Bit/32 128-word/256-byte 8-word/16-byte L256ML SA4871 BD8000 sa340 transistor SA427 SA370 8A000 740-0007 Am29LV256 SA36-110

    29gl064

    Abstract: TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M
    Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M,


    Original     		PDF S29GL-M S29GL256M, S29GL128M, S29GL064M, S29GL032M S29GL032A, S29GL064A, S29GL128N, S29GL256N S29GL032M, 29gl064 TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M

    RF8900

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS SA3600 Low voltage dual-band RF front-end Prelim inary specification Philips Semiconductors 1999 M ar 18 PHILIPS Philips Semiconductors Preliminary specification Low voltage dual-band RF front-end SA3600 DESCRIPTION APPLICATIONS The SA3600 is an integrated dual-band RF front-end that operates


    OCR Scan     		PDF SA3600 SA3600 RF8900