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    SA038 Search Results

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    SA038 Price and Stock

    Broadcom Limited MSA-0386-BLK

    IC AMP ISM 2.4GHZ 86 PLASTIC PKG
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    Broadcom Limited MSA-0386-TR1G

    IC AMP 2.4GHZ 86 PLASTIC PACKAGE
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    DigiKey MSA-0386-TR1G Reel
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    Win Source Electronics MSA-0386-TR1G 2,734
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    • 1000 $1.553
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    Broadcom Limited MSA-0386-BLKG

    IC AMP 0HZ-5GHZ 86 PLASTIC PKG
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    Broadcom Limited MSA-0386-TR2G

    IC AMP ISM 2.4GHZ 86 PLASTIC PKG
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    Carling Technologies CX3-SA-03-810-ACA-06A

    CIRCUIT BREAKER
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    Mouser Electronics CX3-SA-03-810-ACA-06A
    • 1 $266.55
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    • 100 $230.77
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    Master Electronics CX3-SA-03-810-ACA-06A
    • 1 $235.1
    • 10 $132.11
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    SA038 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SA038WA-008

    Abstract: No abstract text available
    Text: Surface Acoustic Wave Filter TOKO No. SA038WA-008 98/07/23 1. Overall Dimensions 2.54 JAPAN 2.0MAX 1.5 0.8 TOKO Lot No. 6.50 Unit : mm 5 4 6 7 Input : 11 3 8 Output : 5 2 9 Return : 12 13.3 Part No. Ground : 1, 2, 3, 4 1 10 12 11 Orientation mark Return : 6


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    PDF SA038WA-008 312MHz 512MHz 48MHz SA038WA-008

    71WS256NC0BAIAU

    Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics


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    PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512Nx0/S71WS256Nx0 71WS256NC0BAIAU cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002

    TH11-4H104FT

    Abstract: g920at24U NQ82910GML max1532a SW TACT SPST 5P FW82801FB UL C527 TH11-4h TH11-4H104F SKUL30-02AT-G
    Text: Material List by Single-Item/Multi-Level - All -Date : 05/17/2005 Time : 17:29:04 Drawing No: 451344 Plant: CN30 Revision: E Report by UID: 9141332


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    PDF BO001 BO002 BO003 451344BO001 LA-2761 EFL50 915PM 451344BO002 TH11-4H104FT g920at24U NQ82910GML max1532a SW TACT SPST 5P FW82801FB UL C527 TH11-4h TH11-4H104F SKUL30-02AT-G

    SA047

    Abstract: No abstract text available
    Text: S29WS-N MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst


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    PDF S29WS-N S29WS256N, S29WS128N, S29WS064N 16-Bit) S29WS256/128/064N SA047

    S71WS512ND0BFWEP

    Abstract: LZ 48H 526 71WS512ND0BFWEP BAX55 S71WS512 71WS512ND
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CELLULAR RAM ADVANCE INFORMATION Datasheet Distinctive Characteristics


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    PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512Nx0/S71WS256Nx0 S71WS512ND0BFWEP LZ 48H 526 71WS512ND0BFWEP BAX55 S71WS512 71WS512ND

    TRANSISTOR BFW 11

    Abstract: S29WS-N transisTOR C124 064N S29WS064N S29WS128N S29WS256N WS064 SA047-SA050
    Text: ADVANCE INFORMATION S29WS-N MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet Notice to Readers: The Advance Information status indicates that this


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    PDF S29WS-N S29WS256N, S29WS128N, S29WS064N 16-Bit) TRANSISTOR BFW 11 transisTOR C124 064N S29WS064N S29WS128N S29WS256N WS064 SA047-SA050

    SA047

    Abstract: No abstract text available
    Text: S29WS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Burst-mode MirrorBit Flash Memory Data Sheet (Advance Information) S29WS064R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    PDF S29WS064R 16-bit) S29WS064R SA047

    BAX55

    Abstract: No abstract text available
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications


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    PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) S71WS-N-00 S71WS-N-00 BAX55

    KB910Q

    Abstract: FW82801FBM KB910Q B4 SP093MX0000 FBM-L11-160808-800LMT ML1220T10 FBM-L11-201209-221LMAT BUF C752 D970K NQ82915GM
    Text: Material List by Single-Item/Multi-Level - All -Date : 03/22/2005 Time : 11:33:04 Drawing No: 451336 Plant: CN30 Revision: K Report by UID: 8745064


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    PDF BO001 BO002 BO003 BO004 BO005 451336BO001 LA-2601 EDL00 NV43M/128M 451336BO002 KB910Q FW82801FBM KB910Q B4 SP093MX0000 FBM-L11-160808-800LMT ML1220T10 FBM-L11-201209-221LMAT BUF C752 D970K NQ82915GM

    TVB230-050

    Abstract: PolySwitch Resettable Fuse
    Text: SiBar Thyristor Surge Protectors New thyristor products for overvoltage protection SiBar thyristor surge protectors provide transient voltage protection for telecommunications applications Raychem introduces its new line of thyristor surge protectors designed to protect sensitive


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    TCMS

    Abstract: S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95
    Text: S72WS256N Based MCPs 256/512 Megabit 16M/32M x 16-bit CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications


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    PDF S72WS256N 16M/32M 16-bit) 16-bit TCMS S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95

    TCMS

    Abstract: TRANSISTOR BFW 11 pin diagram S73WS256N marking code qa1 148
    Text: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION


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    PDF S73WS256N 32M/16M 16-bit) 16-bit S72WS256N TCMS TRANSISTOR BFW 11 pin diagram marking code qa1 148

    S29WS128N

    Abstract: sample code read and write flash memory spansion S29WS064N S29WS256N S29WS-N S70WS512N00 TSB084 sample code write buffer spansion SA047-SA050
    Text: S70WS512N00 Based MCPs Same-Die Stacked Multi-Chip Product MCP 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications


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    PDF S70WS512N00 S29WS128N sample code read and write flash memory spansion S29WS064N S29WS256N S29WS-N TSB084 sample code write buffer spansion SA047-SA050

    S29WS064R

    Abstract: SA053 sa029 spansion top marking WS064R SA057 sa086 SA056 SA027
    Text: S29WS064R 64 Megabit 4M x 16-bit , CMOS 1.8 Volt-Only Simultaneous Read/Write, Burst-mode MirrorBit Flash Memory Data Sheet (Advance Information) S29WS064R Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


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    PDF S29WS064R 16-bit) S29WS064R SA053 sa029 spansion top marking WS064R SA057 sa086 SA056 SA027

    71WS512ND

    Abstract: 4136P
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Megabit (8M x 16-Bit) pSRAM Type 4 ADVANCE INFORMATION Distinctive Characteristics


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    PDF S71WS512Nx0/S71WS256Nx0 32M/16M 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512Nx0/S71WS256Nx0 71WS512ND 4136P

    transistor c124 esn

    Abstract: TLC 555 pin diagram of TRANSISTOR BFW 11
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst


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    PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) S29WS256/128/064N transistor c124 esn TLC 555 pin diagram of TRANSISTOR BFW 11

    TRANSISTOR BFW 11 pin diagram

    Abstract: 064N S29WS064N S29WS128N S29WS256N WS128N pin diagram of TRANSISTOR BFW 11
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet PRELIMINARY General Description The Spansion S29WS256/128/064N are MirrorbitTM Flash products fabricated on 110 nm process technology. These burst


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    PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) S29WS256/128/064N TRANSISTOR BFW 11 pin diagram 064N S29WS064N S29WS128N S29WS256N WS128N pin diagram of TRANSISTOR BFW 11

    Untitled

    Abstract: No abstract text available
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications


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    PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) S71WS-N-02 S71WS-N-02

    Untitled

    Abstract: No abstract text available
    Text: Oavantek MSA-0386 MOD A M P C ascadable S ilic o n B ip o la r M o n o lith ic M icrow ave Integrated C irc u it A m p lifie rs Avantek 86 Plastic Package Features • Cascadable 50 Cl Gain Block • 3 dB Bandwidth: DC to 2.4 GHz • 12.0 dB typical Gain at 1.0 GHz


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    PDF MSA-0386 MSA-0386

    MSH 11

    Abstract: 37.5 GHz SCHOTTKY DIODE
    Text: MSH108C HEMT Schottky Diode Mixer GaAs Telecom Products Features • RF frequency: 35 to 40 GHz • Conversion loss: 6 dB • Functions as upconverter and downconverter • Singly balanced mixer topology Description and Applications The MSH108C is a monolithic HEMi scnottKy diode, smgiy-Daianced mixer designed tor use in com­


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    PDF MSH108C MSH108C 9701455-S-J1 SA038 im-2500 MSH 11 37.5 GHz SCHOTTKY DIODE

    APH131C

    Abstract: No abstract text available
    Text: APH131C Ka-Band HEMT Power Amplifier GaAs Telecom Products Features • RF frequency: 35 to 40 GHz • Linear gain: 16 dB • PldB: 23 dBm • Built-in output power detector with reference port • Unconditionally stable • DC power: 4 Vdc at 600 mA Description and Applications


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    PDF APH131C APH131C 9701455-S-J1 SA038

    ALH244C

    Abstract: 9701455-S-J1 cu 3842 TRW 1407 Ka-band
    Text: ALH244C Ka-Band HEMT Low-Noise Amplifier GaAs Telecom Products Features • RF frequency: 24 to 41 GHz • Linear gain: 12 dB • NF: 4 dB • Unconditionally stable • Balanced design provides excellent input and output VS WR • Biasable from either side of chip


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    PDF ALH244C ALH244C 9701455-S-J1 SA038 9701455-S-J1 cu 3842 TRW 1407 Ka-band

    SA210WA-001

    Abstract: SA038WA-008
    Text: For Others Applications mm •fc-fcSiS» mxm* mm Applica­ tion TOKO Part Number Center Freq. Fo MHz Bandwidth (kHz) Insertion Loss Fo (dB) Attenuation (dB) Group delay DECT SA240WA-001 240.192 Fo ± 650 min. at 3dB 9.0 max. 15.0 min. (Fo :7.1.728MHz) 0.35 max. (Fo± 650kHz)


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    PDF 728MHz) Fo-900kHz) 25MHz) 600kHz) 875kHz) 75MHz) 60kHz) SA210WA-001 SA038WA-008

    SA038WA-008

    Abstract: SA210WA-001 SA200HS-004 sa240wa001
    Text: TYPE SA MH l O W O STANDARD PART NUM BER LIST ELECTRICAL CHARACTERISTICS TA = 25°C. Detailed specifications for each p/n are available from ^oko. TYPESA WIDE BAND IF FILTERS Typical Applications CDMA Bandwidth Canter 3d8 Frequency (kHzmin) (MHz) TOKO Part


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    PDF SA085LS-011 SA210WA-001 SA130ZA-004 SA038WA-008 SA200HS-004 sa240wa001