2N7002 MARKING 702
Abstract: 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002
Text: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 M8p BSN20W M8t BSS84 SP BSS87 KA BSS123 SA BSS192 KB BST80 KM BST82
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OT323
BSN20
BSN20W
BSS84
BSS87
BSS123
BSS192
BST80
BST82
BST84
2N7002 MARKING 702
2n7002 MARKING
2N7002 PHILIPS MARKING
BSS84 MARKING CODE
marking 702 sot23
Philips MARKING CODE
BSN20 MARKING
sot23 02p
PMBF170 pkx
codes marking 2N7002
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Untitled
Abstract: No abstract text available
Text: 2SA1734T1 Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com
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2SA1734T1
OT-89
inch/1000
2SA1734T1/D
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marking SA
Abstract: No abstract text available
Text: 2SA1734T2G Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com
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2SA1734T2G
OT-89
inch/1000
2SA1734T2G/D
marking SA
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2SA1734R1G
Abstract: marking SA
Text: 2SA1734R1G Preferred Device PNP Silicon Transistor The device is housed in the SOT-89 package, which is designed for medium power surface mount applications. • High Current: 1.2 Amp • Available in 7 inch/1000 unit Tape and Reel • Device Marking: SA http://onsemi.com
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2SA1734R1G
OT-89
inch/1000
2SA1734R1G/D
2SA1734R1G
marking SA
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transistor C3866
Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)
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Untitled
Abstract: No abstract text available
Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX619 ISSUE 6 - JANUARY 2003 FEATURES * 2 W POWER D ISSIPA TION * * * * * 6A PEAK PULSE CURRENT EXCELLENT h FE CHARACTERISTICS UP TO 6 Am ps EXTREM ELY LOW SATURATION VOLTAGE e.g. 13m V typ. EXTREM ELY LOW EQUIVALENT ON-RESISTANCE;
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FCX619
FCX720
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2N7002 PHILIPS MARKING
Abstract: 2N7002 MARKING 702 Marking codes 2N7002 2n7002 MARKING Type Transistors 702 codes marking 2N7002 sot23 02p marking 702 sot23 BSN20 MARKING
Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes PowerMOS transistors 1998 Apr 10 File under Discrete Semiconductors, SC13 Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table.
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Original
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OT323
BSN20
BSN20W
BSS84
BSS87
BSS123
BSS192
BST80
BST82
BST84
2N7002 PHILIPS MARKING
2N7002 MARKING 702
Marking codes
2N7002
2n7002 MARKING
Type Transistors 702
codes marking 2N7002
sot23 02p
marking 702 sot23
BSN20 MARKING
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Untitled
Abstract: No abstract text available
Text: ZXTP2013Z 100V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -100V : RSAT = 57m ; IC = -3.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line
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ZXTP2013Z
-100V
TP2013ZTA
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2005Z
Abstract: No abstract text available
Text: ZXTN2005Z 25V NPN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = 25V : RSAT = 25m ; IC = 5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 25V NPN transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits
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ZXTN2005Z
2005Z
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Untitled
Abstract: No abstract text available
Text: ZXTP2008Z 30V PNP LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits, line sw itching and
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ZXTP2008Z
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Untitled
Abstract: No abstract text available
Text: ZX5T3Z 40V PNP HIGH GAIN LOW SATURATION M EDIUM POWER TRANSISTOR IN SOT89 SUM M ARY BV CEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 40V PNP transistor offers low on state losses m aking it ideal for use in DC-DC circuits,
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-60mV
WIDTH161
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Philips MARKING CODE
Abstract: sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSS84 MARKING CODE BSN20 MARKING marking pKX sot23 marking M8p 2N7002 PHILIPS SOT323 702 sot23
Text: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 BSN20W M8p M8t BSS84 SP BSS87 BSS123 BSS192 KA SA BST80 BST82 KM 02p
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OCR Scan
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OT323
BSN20
BSN20W
BSS84
BSS87
BSS123
BSS192
BST80
BST82
BST84
Philips MARKING CODE
sot23 02p
2N7002 MARKING 702
sot23 marking code m8p
BSS84 MARKING CODE
BSN20 MARKING
marking pKX sot23
marking M8p
2N7002 PHILIPS SOT323
702 sot23
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Untitled
Abstract: No abstract text available
Text: SOT89 HIGH GAIN TRANSISTORS Pinout: 1-Base, 2&4-Collector, 3-E m itter v CE<sa t hf"E Type V ^Clcont) mA mW v CBO v CEO V P.ot M in/M ax Max at lc / Vce m A /V o lts Volts at lc / Iß mA H Typ MHz Part Mark Code NPN FCX696B 250 250 500 1500 500/- 100/5 0.25
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OCR Scan
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FCX696B
FCX694B
FCX692B
FCX690B
FCX689B
FCX688B
1500E
FCX604
BST51
BCV49
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Diode Mark N10
Abstract: BZV49 diode GF M
Text: SOT89 NPN SWITCHING TRANSISTORS Pinout : 1-Base, 2&4-Collector, 3-Emitter V CE sa O Max h -E Type v CBO v CEO ^C(cont P lo t V V mA W FCX2369A 40 15 500 1.0 40/120 FCX2369 40 15 500 1.0 40/120 M in/M ax at lc / V ce m A / Volts Part Mark Code Volts at l c / Iß
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OCR Scan
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FCX2369A
FCX2369
BZV49
BAW79D
BAW79C
BAW79B
BAW79A
200mA,
BAW78D
BAW78C
Diode Mark N10
diode GF M
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jb sot-89
Abstract: IJU7211U NJU7211 NJU7211L sot89 JB
Text: i* * NJU7211 C-M O S 3 w i t l Œ 5MCX-, IS S «««, «ŒKÆfBfiifcSx-* <*nx u * fo m*«Œ ï, rtasxsÆSftxfcu, îtz , sa i t i T - i b 'I t i t f b , «* > B * « » iiK c < A t ìA M « t ìS f e ->*TAmizfc%TzmvTêit. ' J ' S L' í T / ( > ; X 'J - | E » ) * S W $ « Œ ,
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OCR Scan
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JU7211
19/iA
OT-89
NJU7211L
IJU7211U
OT-89)
OT-89
7211L20
7211U20
7211L40
jb sot-89
IJU7211U
NJU7211
NJU7211L
sot89 JB
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Untitled
Abstract: No abstract text available
Text: SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 -JANUARY 1996 Q CO M PLEM ENTARY TYPE - BST15 PA RTM AKING DETAIL — AT2 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT 'v'C BO 300 Collector-Em itter Voltage V CEO 250
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OCR Scan
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BST15
100uA,
FMMTA42
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PDF
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p96 sot89
Abstract: No abstract text available
Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - NOVEMBER 1995_ O PARTM ARKIN G D ETA IL - P96 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SYM BO L Collector-Base Voltage VALUE UNIT V CBO -220 C ollector-Em itter Voltage v ceo -200 V V Em itter-Base Voltage
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OCR Scan
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-100hA
-200V
-10mA
-250mA
-25mA*
-100mA
p96 sot89
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PDF
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transistor p89
Abstract: transistor be p89
Text: SOT89 PNP SILICON PLANAR M EDIU M POWER HIGH PERFORMANCE TRANSISTOR ISSU E 3 - OCTOBER 1995 PARTMARKING DETAIL - O P89 ABSOLUTE M A X IM U M RATINGS. SY M BO L PARAM ETER C o lle cto r-B a se V o lta ge C olle ctor-E m itter V o lta ge E m itte r-B ase V o lta ge
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OCR Scan
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--500mA,
transistor p89
transistor be p89
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Untitled
Abstract: No abstract text available
Text: • bb.53^31 0 0 2 5 ^ 3 527 * A P X N A PIER PHILIPS/DISCRETE PXTA92 PXTA93 b7E D SILICON EPITAXIAL TRANSISTORS PNP high voltage transistors in a SOT89 envelope, intended for surface-mounted applications. They are primarily intended for use in telephony and professional communications equipment.
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OCR Scan
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PXTA92
PXTA93
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lem lta 100p
Abstract: lta 100p 6100B
Text: SOT89 PNP SILICON PLANAR M ED IU M POWER TRANSISTOR iSSUE 2 - FEBRUARY 1995 O FEATURES * H igh g a in a n d lo w saturation v o lta ge s C O M P LEM EN T A R Y TYPE - BCX68 P A R T M A R K IN G D E T A IL - BCX69 - CJ BCX69T6 CG B C X 6 9 -2 5 -C H ABSOLUTE M A X IM U M RATINGS.
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OCR Scan
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BCX68
BCX69
BCX69T6
-100n
-500mÂ
--500m
300us.
lem lta 100p
lta 100p
6100B
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FCX593 ISSUE 3 • NOVEMBER 1995_ O C O M P L IM E N T A R Y T O F M M T 4 9 3 P A R T M A R K IN G D E T A IL - P93 ABSOLUTE M A X IM U M RATINGS. PARAM ETER V A LU E SYM BO L U N IT C o lle cto r-B a se V o lta ge
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OCR Scan
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FCX593
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PDF
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FCX749
Abstract: 3emitter bst52 FCX688B FCX689B FCX690B FCX692B FCX694B FCX696B FCX789A
Text: SOT89 HIGH GAIN TRANSISTORS Pinout: 1-Base, 2&4-Collector, 3-Emitter v CE say Max h :E Type v CBO V v CEO V ^C(cont mA mW FCX696B 250 FCX694B 120 250 500 1500 120 500 1500 FCX692B FCX690B 70 70 2000 1500 400/- 45 45 2000 1500 400/- FCX689B 20 20 3000 1500
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OCR Scan
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FCX696B
FCX694B
FCX692B
FCX690B
FCX689B
FCX688B
FCX796A
FCX795A
FCX792A
-500/ctor,
FCX749
3emitter
bst52
FCX789A
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON POWER FCX789A SWITCHING TRANSISTOR ISSSUE 1 -NOVEMBER 1998 FEATURES * 2W POWER D IS S IP A T IO N * * * 8 A Peak Pulse C urrent E xcellent HFE C h a ra cte ristics up to 10 A m p s L o w S a tu ra tio n V o lta g e E.g. lO m v T y p . C o m p lim e n ta ry T yp e P a rtm a rkin g D etail -
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OCR Scan
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FCX789A
FCX688B
15x15x0tput
-50mA,
50MHz
-500mA,
-50mA
300ns.
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TRANSISTOR S2d
Abstract: lc-30mA L02M
Text: SOT89 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 SXTA92 O COM PLEM ENTARY TYPE - SXTA42 PARTMARKING DETAIL - S2D SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYMBOL Emitter-Base Voltage VALUE
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OCR Scan
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SXTA92
SXTA42
-200V,
-20mA.
-20mA,
lc--10mA,
-30mA,
-10mA,
20MHz
300us.
TRANSISTOR S2d
lc-30mA
L02M
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