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    SA 101 1E M Search Results

    SA 101 1E M Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    EVAL-ADN4650EB1Z Analog Devices ADN4650 Evaluation Board Visit Analog Devices Buy
    ADN4651BRSZ-RL7 Analog Devices 3.75kVrms LVDS Iso 600Mbps Dua Visit Analog Devices Buy
    ADN4692EBRZ-RL7 Analog Devices MLVDS Xcvr,FD,100M Type 1 Rx,E Visit Analog Devices Buy
    ADN4695EBRZ Analog Devices MLVDS Xcvr,FD,100M Type 2 Rx,E Visit Analog Devices Buy
    EVAL-ADN4652EB1Z Analog Devices ADN4652 SOIC-W Eval Board Visit Analog Devices Buy
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    SA 101 1E M Price and Stock

    Nichicon Corporation RSA1E101MCN1GS

    Aluminum Organic Polymer Capacitors 25V 100uf 20% Polymer SMT
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    Mouser Electronics RSA1E101MCN1GS 389
    • 1 $1.14
    • 10 $0.624
    • 100 $0.555
    • 1000 $0.382
    • 10000 $0.331
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    Kyocera AVX Components SA101E473MAA

    Multilayer Ceramic Capacitors MLCC - Leaded 100 VDC .047uF Z5U 2 0 % .2 in
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    Mouser Electronics SA101E473MAA
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    Kyocera AVX Components SA101E473MAR

    Multilayer Ceramic Capacitors MLCC - Leaded 100 VDC .047uF Z5U 2 0 % .2 in
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    Mouser Electronics SA101E473MAR
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    Kyocera AVX Components SA101E333MAA

    Multilayer Ceramic Capacitors MLCC - Leaded 100 VDC .033uF Z5U 2 0 % .2 in
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SA101E333MAA
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    Kyocera AVX Components SA101E473MAC

    Multilayer Ceramic Capacitors MLCC - Leaded 100 VDC .047uF Z5U 2 0 % .2 in
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SA101E473MAC
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    Find more SA 101 1E M price and stock on Findchips.com

    SA 101 1E M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS SA 7mmL, For General Purposes series Standard miniature series with 7mm height. SR 7mmL, High CV series Smaller SR series Higher CV series with 7mm ST height. High Temperature Adapted to the RoHS directive (2002/95/EC). SL


    Original     		PDF 2002/95/EC) 120Hz, 120Hz 8100U

    MARKING SR

    Abstract: SR SERIES electrolytic capacitors
    Text: ALUMINUM ELECTROLYTIC CAPACITORS SA 7mmL, For General Purposes series Standard miniature series with 7mm height. SR 7mmL, High CV series Smaller SR series ST Higher CV series with 7mm height. High Temperature SP Bi-polarized SL Low Leakage Current SA Smaller


    Original     		PDF 120Hz, 120Hz 8100Q-1 MARKING SR SR SERIES electrolytic capacitors

    D 44 SR

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS SA 7mmL, For General Purposes series Standard miniature series with 7mm height. SR 7mmL, High CV series Smaller SR series Higher CV series with 7mm height. ST High Temperature SP Bi-polarized SL Low Leakage Current SA Smaller


    Original     		PDF 120Hz, 120Hz 8100S D 44 SR

    Untitled

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS SA SR 7mmL, For General Purposes series Standard miniature series with 7mm height. 7mmL, High CV series Smaller SR series Higher CV series with 7mm ST height. High Temperature Compliant to the RoHS directive (2002/95/EC).


    Original     		PDF 2002/95/EC) 120Hz, 120Hz50 120Hz 8100B

    Untitled

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS SA SR 7mmL, For General Purposes series Standard miniature series with 7mm height. 7mmL, High CV series Smaller SR series Higher CV series with 7mm ST height. High Temperature Adapted to the RoHS directive (2002/95/EC). SA


    Original     		PDF 2002/95/EC) 120Hz, 120Hz 8100X

    SA SERIES electrolytic capacitors

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS SA SR 7mmL, For General Purposes series Standard miniature series with 7mm height. 7mmL, High CV series Smaller SR series Higher CV series with 7mm ST height. High Temperature Adapted to the RoHS directive (2002/95/EC). SL


    Original     		PDF 2002/95/EC) 120Hz, 120Hz SA SERIES electrolytic capacitors

    Untitled

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS SA 7mmL, For General Purposes series Standard miniature series with 7mm height. SR 7mmL, High CV series Smaller SR series Higher CV series with 7mm ST height. High Temperature SL SA Low Leakage Current SP Bi-polarized Smaller


    Original     		PDF 120Hz, 120Hz 8100T

    Untitled

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS SA SR 7mmL, For General Purposes series Standard miniature series with 7mm height. 7mmL, High CV series Smaller SR series Higher CV series with 7mm ST height. High Temperature Compliant to the RoHS directive (2002/95/EC).


    Original     		PDF 2002/95/EC) 120Hz, 120Hz

    Untitled

    Abstract: No abstract text available
    Text: ALUMINUM ELECTROLYTIC CAPACITORS SA 7mmL, For General Purposes series Standard miniature series with 7mm height. SR 7mmL, High CV series Smaller SR series Higher CV series with 7mm ST height. High Temperature Adapted to the RoHS directive (2002/95/EC). SL


    Original     		PDF 2002/95/EC) 120Hz, 120Hz

    z5u .05

    Abstract: Z5U diode capacitor 104 100v 100pf Capacitor dimension 10pf Capacitor dimension 10pf npo 12 PIN SIP 11-pin CAPACITOR z j k voltage 100PF
    Text: Capacitor Networks-sip RATING E-12 Series Capacitance Range CS 10pf-0.022µF 0.01µF-1µF T.C.R. NPO, X7R, Z5U Capacitance Tol. DIMENSION：mm CL J, K, M, Z Rated Voltage VDC L (Max) 4 Pin 5 Pin 6 Pin 7 Pin 8 Pin 9 Pin 10 Pin 11 Pin 12 Pin 13 Pin 14 Pin 10.2


    Original     		PDF 10pf-0 4-14PINS 100Vlectric 1000M-MFD 10pF1 000pF 220pF0 z5u .05 Z5U diode capacitor 104 100v 100pf Capacitor dimension 10pf Capacitor dimension 10pf npo 12 PIN SIP 11-pin CAPACITOR z j k voltage 100PF

    IS61DDPB24M18

    Abstract: IS61DDPB22M36
    Text: 72 Mb 2M x 36 & 4M x 18 DDR-IIP (Burst of 2) CIO Synchronous SRAMs . (2.5 Cycle Read Latency) Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late


    Original     		PDF IS61DDPB22M36-400M3 IS61DDPB22M36-400M3L IS61DDPB24M18-400M3 IS61DDPB24M18-400M3L IS61DDPB22M36-375M3 IS61DDPB22M36-375M3L IS61DDPB24M18-375M3 IS61DDPB24M18-375M3L 2Mx36 IS61DDPB24M18 IS61DDPB22M36

    Untitled

    Abstract: No abstract text available
    Text: 72 Mb 2M x 36 & 4M x 18 DDR-IIP (Burst of 2) CIO Synchronous SRAMs . (2.5 Cycle Read Latency) Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late


    Original     		PDF 165-ball delay-lock1/08 IS61DDPB22M36-400M3 IS61DDPB22M36-400M3L IS61DDPB24M18-400M3 IS61DDPB24M18-400M3L IS61DDPB22M36-375M3 IS61DDPB22M36-375M3L IS61DDPB24M18-375M3 IS61DDPB24M18-375M3L

    Untitled

    Abstract: No abstract text available
    Text: 72 Mb 2M x 36 & 4M x 18 DDR-IIP (Burst of 2) CIO Synchronous SRAMs . (2.5 Cycle Read Latency) Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late


    Original     		PDF 165-ball delay-l1/08 IS61DDPB22M36-400M3 IS61DDPB22M36-400M3L IS61DDPB24M18-400M3 IS61DDPB24M18-400M3L IS61DDPB22M36-375M3 IS61DDPB22M36-375M3L IS61DDPB24M18-375M3 IS61DDPB24M18-375M3L

    Untitled

    Abstract: No abstract text available
    Text: 72 Mb 2M x 36 & 4M x 18 DDR-II (Burst of 2) CIO Synchronous SRAMs . Advanced Information January 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late


    Original     		PDF IS61DDB22M36-300M3 IS61DDB22M36-300M3L IS61DDB24M18-300M3 IS61DDB24M18-300M3L IS61DDB22M36-250M3 IS61DDB22M36-250M3L IS61DDB24M18-250M3 IS61DDB24M18-250M3L 2Mx36

    IS61QDB22M36

    Abstract: D0-35 IS61QDB24M18
    Text: 72 Mb 2M x 36 & 4M x 18 QUAD (Burst of 2) Synchronous SRAMs . A May 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Separate read and write ports with concurrent read and write operations. • Two echo clocks (CQ and CQ) that are delivered


    Original     		PDF IS61QDB22M36-300M3 IS61QDB22M36-300M3L IS61QDB24M18-300M3 IS61QDB24M18-300M3L IS61QDB22M36-250M3 IS61QDB22M36-250M3L IS61QDB24M18-250M3 IS61QDB24M18-250M3L IS61QDB22M36-200M3L IS61QDB24M18-200M3L IS61QDB22M36 D0-35 IS61QDB24M18

    Untitled

    Abstract: No abstract text available
    Text: 72 Mb 2M x 36 & 4M x 18 DDR-II (Burst of 2) CIO Synchronous SRAMs . Advanced Information January 2008 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late


    Original     		PDF IS61DDB22M36-300M3 IS61DDB22M36-300M3L IS61DDB24M18-300M3 IS61DDB24M18-300M3L IS61DDB22M36-250M3 IS61DDB22M36-250M3L IS61DDB24M18-250M3 IS61DDB24M18-250M3L 2Mx36

    IS61DDB22M36-300M3L

    Abstract: IS61DDB24M18-300M3L IS61DDB22M36 IS61DDB24M18
    Text: 72 Mb 2M x 36 & 4M x 18 DDR-II (Burst of 2) CIO Synchronous SRAMs . November 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late


    Original     		PDF IS61DDB22M36-300M3 IS61DDB22M36-300M3L IS61DDB24M18-300M3 IS61DDB24M18-300M3L IS61DDB22M36-250M3 IS61DDB22M36-250M3L IS61DDB24M18-250M3 IS61DDB24M18-250M3L 2Mx36 IS61DDB22M36-300M3L IS61DDB24M18-300M3L IS61DDB22M36 IS61DDB24M18

    IS61DDB22M36

    Abstract: IS61DDB24M18
    Text: 72 Mb 2M x 36 & 4M x 18 DDR-II (Burst of 2) CIO Synchronous SRAMs . May 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common data input/output bus. • Synchronous pipeline read with self-timed late


    Original     		PDF IS61DDB22M36-300M3 IS61DDB22M36-300M3L IS61DDB24M18-300M3 IS61DDB24M18-300M3L IS61DDB22M36-250M3 IS61DDB22M36-250M3L IS61DDB24M18-250M3 IS61DDB24M18-250M3L 2Mx36 IS61DDB22M36 IS61DDB24M18

    Untitled

    Abstract: No abstract text available
    Text: 72 Mb 2M x 36 & 4M x 18 QUAD (Burst of 2) Synchronous SRAMs . Advanced Information February 2008 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Separate read and write ports with concurrent read and write operations.


    Original     		PDF IS61QDB22M36-300M3 IS61QDB22M36-300M3L IS61QDB24M18-300M3 IS61QDB24M18-300M3L IS61QDB22M36-250M3 IS61QDB22M36-250M3L IS61QDB24M18-250M3 IS61QDB24M18-250M3L 2Mx36

    IS61QDB22M18-250M3I

    Abstract: D0-35 IDD401 IS61QDB21M36-300M3 IS61QDB21M36-300M3L IS61QDB21M36-250M3LI
    Text: 36 Mb 1M x 36 & 2M x 18 QUAD (Burst of 2) Synchronous SRAMs . I MAY 2009 Features • 1M x 36 or 2M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Separate read and write ports with concurrent read and write operations. • Synchronous pipeline read with early write operation.


    Original     		PDF IS61QDB22M18-300M3LI IS61QDB21M36-250M3I IS61QDB21M36-250M3LI IS61QDB22M18-250M3I IS61QDB22M18-250M3LI IS61QDB22M18-250M3 IS61QDB22M18-250M3L IS61QDB21M36-250M3 IS61QDB21M36-250M3L U757A-200M3I* IS61QDB22M18-250M3I D0-35 IDD401 IS61QDB21M36-300M3 IS61QDB21M36-300M3L IS61QDB21M36-250M3LI

    Untitled

    Abstract: No abstract text available
    Text: 72 Mb 2M x 36 & 4M x 18 QUAD (Burst of 2) Synchronous SRAMs . Advanced Information January 2009 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Separate read and write ports with concurrent read and write operations.


    Original     		PDF 9V372 IS61QDB22M36-300M3 IS61QDB22M36-300M3L IS61QDB24M18-300M3 IS61QDB24M18-300M3L IS61QDB22M36-250M3 IS61QDB22M36-250M3L IS61QDB24M18-250M3 IS61QDB24M18-250M3L 2Mx36

    IS61QDB21M36

    Abstract: 61QDB22M18 IS61QDB22M18-250M3I D0-35 IDD401 IS61QDB21M36-300M3 IS61QDB21M36-300M3L IS61QDB21M36-250M3LI MARK D9 IS61QDB22M18-250M3LI
    Text: 36 Mb 1M x 36 & 2M x 18 QUAD (Burst of 2) Synchronous SRAMs . I JANUARY 2010 Features • 1M x 36 or 2M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Separate read and write ports with concurrent read and write operations. • Synchronous pipeline read with early write operation.


    Original     		PDF IS61QDB22M18-300M3LI IS61QDB21M36-250M3I IS61QDB21M36-250M3LI IS61QDB22M18-250M3I IS61QDB22M18-250M3LI IS61QDB22M18-250M3 IS61QDB22M18-250M3L IS61QDB21M36-250M3 IS61QDB21M36-250M3L U757A-200M3I* IS61QDB21M36 61QDB22M18 IS61QDB22M18-250M3I D0-35 IDD401 IS61QDB21M36-300M3 IS61QDB21M36-300M3L IS61QDB21M36-250M3LI MARK D9 IS61QDB22M18-250M3LI

    Untitled

    Abstract: No abstract text available
    Text: 72 Mb 2M x 36 & 4M x 18 7 DDR-II (Burst of 4) CIO Synchronous SRAMs D . I ADVANCED INFORMATION JANUARY 2008 Features • 2M x 36 or 4M x 18. • On-chip delay-locked loop (DLL) for wide data valid window. • Common I/O read and write ports. • Synchronous pipeline read with late write operation.


    Original     		PDF IS61DDB42M36-300M3 IS61DDB42M36-300M3L IS61DDB44M18-300M3 IS61DDB44M18-300M3L IS61DDB42M36-250M3 IS61DDB42M36-250M3L IS61DDB44M18-250M3 IS61DDB44M18-250M3L 2Mx36

    2SD1624

    Abstract: u 5601 2SB1124
    Text: Ordering num ber: EN 2019A 2SB1124/2SD1624 NO.2019A SA VYÖ PN P/N PN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features . Adoption of FBIT, MBIT processes.


    OCR Scan     		PDF 2SB1124/2SD1624 2SB1124 250mm 35M-0 2SD1624 u 5601