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    S9G07A Search Results

    S9G07A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S9G07A Toshiba MICROWAVE POWER GaAs FET Scan PDF

    S9G07A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: S9G07A FEATURES • LOW DISTORTION Pad] = *74dBc@ Po * ■ ■ NON-MATCHED TYPE 29dBm HIGH GAIN G id B = 14 dB ■ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS Ta = 251Ç CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX. dBm 32.5 33.5 - 13


    OCR Scan     		S9G07A 29dBm/I 600kHz S9G07A PDF

    Untitled

    Abstract: No abstract text available
    Text: S9G07A FEATURES • LO W D ISTO R TIO N ■ NON-MATCHED TYPE ■ HERMETICALLY SEALED PACKAG E Padj = *74 dBc<§> Po = 29 dBm ■ H IG H GAIN G id B = 14 dB RF PERFORMANCE SPECIFICATIONS Ta = 25V CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX. dBm 32.5


    OCR Scan     		S9G07A 29dBm, 600kHz S9G07A PDF

    S9G07A

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER G aAs FET MICROWAVE SEMICONDUCTOR S9G07A TECHNICAL DATA FEATURES : • LOW DISTORTION NON-M ATCHED TYPE Padj = -74 dBc@ Po = 29 dBm HERMETICALLY SEALED PACKAGE HIGH GAIN G id B = 14 dB RF PERFORMANCE SPECIFICATIONS Ta = 25°C CHARACTERISTICS


    OCR Scan     		S9G07A 29dBm, 600kHz S9G07A PDF