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    S9018LT1 Search Results

    S9018LT1 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S9018LT1 Jiangsu Changjiang Electronics Technology SOT-23 Plastic Rncapsulate Transistors Original PDF
    S9018LT1 Shandong Yiguang Electronic Joint Stock NPN Epitaxial Silicon Transistor Original PDF
    S9018LT1 Weitron NPN General Purpose Transistors Original PDF

    S9018LT1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor SOT23 J8

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.05 A ICM: Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-23 S9018LT1 OT-23 S9018LT1= 400MHz transistor SOT23 J8

    transistor SOT23 J8

    Abstract: transistor j8 S9018LT1
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current 0.05 A ICM: Collector-base voltage


    Original     		PDF OT-23 S9018LT1 OT-23 S9018LT1= 400MHz transistor SOT23 J8 transistor j8 S9018LT1

    Untitled

    Abstract: No abstract text available
    Text: S9018LT1 3 1 2 SOT-23 V CEO Value 15 30 5.0 50 Power Dissipation（Tamb=25°C） 200 Junction Temperature 150 Storage Temperature 15 100u 30 100 5.0 100 0.1 u 0.05 u 0.1 u O E=15 Vdc, I E= 0 20 3.0 DC current gain VCE=5V, IC= 1mA) hFE(1) Collector-emitter saturation voltage (IC=10mA, IB= 1mA)


    Original     		PDF S9018LT1 OT-23 400MHz) S9018LT1 25-Oct-2010 OT-23

    S9018LT1

    Abstract: No abstract text available
    Text: S9018LT1 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value 18 25 4.0 50 200 1.14 875 S9018LT1=J8 18 100u 25 100 4.0 100 E=15 Vdc, I E= 0 ) 20 3.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u S9018LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)


    Original     		PDF S9018LT1 OT-23 S9018LT1 400MHz)

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018LT1 TRANSISTOR（ NPN ） SOT—23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR １．０ Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : 0.05


    Original     		PDF OT-23 S9018LT1 S9018LT1= 037TPY 950TPY 550REF 022REF

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    g21 Transistor

    Abstract: transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor
    Text: S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF S9018 1100MHz OT-23 MRA151 MRA153 g21 Transistor transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    transistor SOT23 J8

    Abstract: AV9018LT1 transistor j8 S9018LT1 npn sot-23
    Text: @vic SOT-23 Plastic-Encapsulate Transistors AV9018LT1 TRANSISTOR NPN SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current ICM: 0.05 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-23 AV9018LT1 OT-23 400MHz S9018LT1= transistor SOT23 J8 AV9018LT1 transistor j8 S9018LT1 npn sot-23

    Untitled

    Abstract: No abstract text available
    Text: M C C SOT-23 P la stic-E n ca p su la te T ra n s is to rs ^ 8 9 0 1 8LT1 TR A N SISTO R N PN 1 .BASE 2 .E M IT T E R 3.C O LL E C T O R FEATURES Power, dissipation o PCM: 0.2 W (Tam b=25“C ) Collector current ICM: 0.05 A CoiMttor-base voltage V(BR)CBO: 25V


    OCR Scan     		PDF OT-23 S9018LT1 S9018LT1