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    S9018 TRANSISTOR Search Results

    S9018 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    S9018 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S9018H

    Abstract: S9018 transistor transistor S9018 S9018 S9018G
    Text: MCC S9018 S9018-G S9018-H S9018-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		PDF S9018 S9018-G S9018-H S9018-I 31Watts -55OC S9018H S9018 transistor transistor S9018 S9018 S9018G

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components S9018-G S9018-H S9018-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		PDF S9018-G S9018-H S9018-I 31Watts -55OC S9018

    S9018H

    Abstract: S9018G
    Text: MCC S9018 S9018-G S9018-H S9018-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		PDF S9018 S9018-G S9018-H S9018-I 31Watts -55OC S9018H S9018G

    S9018H

    Abstract: transistor s9018h transistor S9018
    Text: MCC S9018 S9018-G S9018-H S9018-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		PDF S9018 S9018-G S9018-H S9018-I 31Watts -55OC S9018H transistor s9018h transistor S9018

    transistor s9018

    Abstract: S9018 to-92 S9018 S9018 transistor S9018* transistor S9018 TO92
    Text: S9018 S9018 TO-92 TRANSISTOR NPN FEATURES 1. EMITTER 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current ICM: 0.05 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF S9018 400MHz transistor s9018 S9018 to-92 S9018 S9018 transistor S9018* transistor S9018 TO92

    transistor s9018

    Abstract: S9018H
    Text: MCC TM Micro Commercial Components S9018-G S9018-H S9018-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		PDF S9018-G S9018-H S9018-I 31Watts -55OC S9018 100uAdc, transistor s9018 S9018H

    Untitled

    Abstract: No abstract text available
    Text: MCC S9018-G S9018-H S9018-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		PDF S9018-G S9018-H S9018-I 31Watts -55OC S9018 100uAdc,

    S9018G

    Abstract: S9018H
    Text: MCC TM Micro Commercial Components S9018-G S9018-H S9018-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		PDF S9018-G S9018-H S9018-I 31Watts -55OC S9018 S9018G S9018H

    S9018H

    Abstract: No abstract text available
    Text: MCC S9018-G S9018-H S9018-I   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation.


    Original     		PDF S9018-G S9018-H S9018-I 31Watts -55OC S9018 100uAdc, S9018H

    S9018

    Abstract: S9018 transistor IB-015 transistor S9018 h-97
    Text: S9018 PNP EPITAXIAL SILICON TRANSISTOR High Frequency Low Noise Amplifier Application TO-92 Collector Current Ic=-50mA Collector Power Dissipation Pc=400mW High Current Gain Bandwidth Product fT=1,100MHz Typ (Ta=25oC) ABSOLUTE MAXIMUM RATINGS Characteristic


    Original     		PDF S9018 -50mA 400mW 100MHz S9018 S9018 transistor IB-015 transistor S9018 h-97

    g21 Transistor

    Abstract: transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor
    Text: S9018 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM/FM IF AMPLIFIER,LOCAL OSCILIATOR OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=1100MHz Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF S9018 1100MHz OT-23 MRA151 MRA153 g21 Transistor transistor y21 y11 transistor transistor S9018 S9018 transistor Y22 SOT23 s9018 B1140 transistor y21 sot-23 y21 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9018 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current 0.05 A ICM: Collector-base voltage 25


    Original     		PDF S9018 400MHz

    transistor SOT23 J8

    Abstract: transistor S9018 S9018 SOT-23 S9018 J8 SOT23 S9018 transistor S9018 SOT23 S9018 J8 transistor S9018 G vebo 15v sot23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z High current gain bandwidth product. z power dissipation. PC=200mW S9018 Pb Lead-free APPLICATIONS z NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-23


    Original     		PDF S9018 200mW) OT-23 BL/SSSTC085 transistor SOT23 J8 transistor S9018 S9018 SOT-23 S9018 J8 SOT23 S9018 transistor S9018 SOT23 S9018 J8 transistor S9018 G vebo 15v sot23

    S9018 transistor

    Abstract: S9018 transistor S9018 S9018 TO92 S9018 TO-92 S9018* transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S9018 TRANSISTOR NPN 1.EMITTER FEATURES High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 2.BASE 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF S9018 400MHz S9018 transistor S9018 transistor S9018 S9018 TO92 S9018 TO-92 S9018* transistor

    s9018 transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product 1. BASE 2. EMITTER 3. COLLECTOR MARKING：J8


    Original     		PDF OT-23 S9018 OT-23 400MHz s9018 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 S9018 TRANSISTOR NPN 1.EMITTER FEATURES z High Current Gain Bandwidth Product 2.BASE 3.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF S9018

    S9018

    Abstract: S9018 transistor transistor S9018 S9018 J8 transistor SOT23 J8
    Text: S9018 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector 3 3 Power dissipation 1 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500


    Original     		PDF S9018 OT-23 01-Jun-2004 400MHz S9018 S9018 transistor transistor S9018 S9018 J8 transistor SOT23 J8

    S9018 transistor

    Abstract: S9018 transistor S9018 S9018* transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9018 TRANSISTOR NPN SOT-23 1. BASE 2. EMITTER FEATURES z AM/FM Amplifier, Local Oscillator of FM/VHF Tuner z High Current Gain Bandwidth Product fT=1.1 GHz (Typ) 3. COLLECTOR


    Original     		PDF OT-23 S9018 OT-23 400MHz S9018 transistor S9018 transistor S9018 S9018* transistor

    S9018 transistor

    Abstract: S9018 transistor S9018 DATASHEET Transistor BC107 S9018 datasheet
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 S9018 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.31Watts Tamb=25OC of Power Dissipation. Collector-current 0.05A Collector-base Voltage 25V


    Original     		PDF S9018 31Watts -55OC 10mAdc, 400MHz) S9018 transistor S9018 transistor S9018 DATASHEET Transistor BC107 S9018 datasheet

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors S9018 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES 2. BASE Power dissipation 3. COLLECTOR PCM: 0.4 W (Tamb=25℃) Collector current 0.05 A ICM: Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF S9018 400MHz

    transistor S9018

    Abstract: S9018 S9018 transistor S9018 to-92
    Text: S9018 TO-92 Plastic-Encapsulate Transistors Transistor NPN FEATURES TO-92 Power dissipation o P CM :0.31 W (Tamb=25 C) Collector current I CM :0.05 A Collector-base voltage V (BR)CBO :25 V Operating and storage junction temperature range o o T J ,T stg :-55 C to +150 C


    Original     		PDF S9018 transistor S9018 S9018 S9018 transistor S9018 to-92

    S9018

    Abstract: S9018 TO92
    Text: S9018 NPN TO-92 Bipolar Transistors 1. EMITTER 2. BASE TO-92 3. COLLECTOR Features High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage


    Original     		PDF S9018 400MHz S9018 TO92

    S9018

    Abstract: S9018 TO92
    Text: FORWARD INTERNATIONAL ELECTRONICS LID . S9018 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM /FM IF AMPLIFIER^LOCAL OSCILLATOR Package: TO-92 OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=l 100MHz * High Total Power Dissipation: Pc=400mW


    OCR Scan     		PDF S9018 100MHz 400mW BVcboTO-92 100uA S9018 S9018 TO92

    Untitled

    Abstract: No abstract text available
    Text: S9018 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM /FM IF AMPLIFIER^LOCAL OSCILLATOR Package: TO-92 OF FM/VHF TUNER * High Current Gain Bandwidth Product fT =l 100MHz * High Total Power D issipation: Pc=400mW


    OCR Scan     		PDF S9018 100MHz 400mW