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    S9014 TRANSISTOR Search Results

    S9014 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    S9014 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S9014C

    Abstract: S9014D S9014
    Text: MCC S9014 S9014-B S9014-C S9014-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9014 S9014-B S9014-C S9014-D -55OC S9014C S9014D

    transistor S9014

    Abstract: s9014 transistor s9014 equivalent s9014c s9014 application S9014 s9014 datasheet transistor s9014c S9014-D transistor TO-92 S9014
    Text: MCC S9014 S9014-B S9014-C S9014-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9014 S9014-B S9014-C S9014-D -55OC transistor S9014 s9014 transistor s9014 equivalent s9014c s9014 application S9014 s9014 datasheet transistor s9014c S9014-D transistor TO-92 S9014

    s9014c

    Abstract: S9014D transistor S9014C transistor TO-92 S9014 transistor npn s9014 s9014c TRANSISTOR s9014 applications
    Text: MCC S9014 S9014-B S9014-C S9014-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9014 S9014-B S9014-C S9014-D -55OC s9014c S9014D transistor S9014C transistor TO-92 S9014 transistor npn s9014 s9014c TRANSISTOR s9014 applications

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components S9014-B S9014-C S9014-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9014-B S9014-C S9014-D -55OC S9014

    s9014c

    Abstract: No abstract text available
    Text: MCC S9014-B S9014-C S9014-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9014-B S9014-C S9014-D -55OC S9014 100uAdc, s9014c

    S9014C

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components S9014-B S9014-C S9014-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9014-B S9014-C S9014-D -55OC S9014 S9014C

    s9014C

    Abstract: No abstract text available
    Text: MCC S9014-B S9014-C S9014-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9014-B S9014-C S9014-D -55OC S9014 100uAdc, s9014C

    s9014c

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components S9014-B S9014-C S9014-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S9014-B S9014-C S9014-D -55OC S9014 100uAdc, s9014c

    s9015 SOT23 transistor

    Abstract: S9015 S9015 SOT-23 s9015 equivalent s9015 transistor S9015 M6 transistor S9015 m6 marking transistor sot-23 s9014 equivalent S9014 SOT-23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9014. z Excellent HFE Linearity. z Power dissipation. PC=0.2W S9015 Pb Lead-free APPLICATIONS z Low frequency , low noise amplifier. SOT-23 ORDERING INFORMATION


    Original     		PDF S9015 S9014. OT-23 BL/SSSTC084 s9015 SOT23 transistor S9015 S9015 SOT-23 s9015 equivalent s9015 transistor S9015 M6 transistor S9015 m6 marking transistor sot-23 s9014 equivalent S9014 SOT-23

    S9015 SOT-23

    Abstract: m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9015 OT-23 S9014 -100A, -100mA, -10mA S9015 SOT-23 m6 marking transistor sot-23 marking M6 S9015 s9015 transistor s9015 SOT23 transistor transistor S9014 s9014 equivalent S9015 M6 transistor SOT23 S9015

    transistor SOT23 J6

    Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9014 OT-23 S9015 30MHz transistor SOT23 J6 S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz

    transistor S9014

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9014 OT-23 S9015 30MHz transistor S9014

    transistor SOT23 J6

    Abstract: Transistor S9014 transistor SOT-23 marking code J6 S9014 S9014 sot-23 J6 s9014 equivalent s9014 TRANSISTOR j6 sot23 J6 SOT 23 S9014 SOT-23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Complementary To S9015. z Excellent HFE Linearity. z Power dissipation. PC=0.2W S9014 Pb Lead-free APPLICATIONS z Per-Amplifier low level & low noise. SOT-23 ORDERING INFORMATION


    Original     		PDF S9014 S9015. OT-23 BL/SSSTC083 transistor SOT23 J6 Transistor S9014 transistor SOT-23 marking code J6 S9014 S9014 sot-23 J6 s9014 equivalent s9014 TRANSISTOR j6 sot23 J6 SOT 23 S9014 SOT-23

    S9015

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9015 SOT-23 TRANSISTOR PNP FEATURES Complementary to S9014 1. BASE z 2. EMITTER 3. COLLECTOR MARKING: M6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9015 OT-23 S9014 -100mA, -10mA 30MHz S9015

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF OT-23 S9014 OT-23 S9015 30MHz

    transistor SOT23 J6

    Abstract: transistor S9014 S9014 SOT-23 j6 sot23 J6 transistor j6 transistor sot-23 SOT-23 j6 transistor npn s9014 S9014 J6 J6 SOT 23
    Text: S9014 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF S9014 OT-23 OT-23 S9015 30MHz transistor SOT23 J6 transistor S9014 S9014 SOT-23 j6 sot23 J6 transistor j6 transistor sot-23 SOT-23 j6 transistor npn s9014 S9014 J6 J6 SOT 23

    transistor S9014

    Abstract: s9014 s9014 equivalent transistor -s9014 s9014 transistor transistor TO-92 S9015 S9014 TO92 S9015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR


    Original     		PDF S9014 S9015 100mA, 30MHz transistor S9014 s9014 s9014 equivalent transistor -s9014 s9014 transistor transistor TO-92 S9015 S9014 TO92 S9015

    m6 marking transistor sot-23

    Abstract: sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6
    Text: S9015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Complementary to S9014 MARKING: M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		PDF S9015 OT-23 OT-23 S9014 -100A, -100mA, -10mA m6 marking transistor sot-23 sot-23 Marking M6 S9015 SOT-23 s9015 SOT23 transistor s9015 transistor s9015 S9015 M6 marking M6 S9014 SOT-23 transistor SOT23 m6

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High Total Power Dissipation.(PC=0.45W) z High hFE and Good Linearity z Complementary to S9015 2. BASE 3. COLLECTOR


    Original     		PDF S9014 S9015

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR


    Original     		PDF S9014 S9015 100mA, 30MHz

    s9014 equivalent

    Abstract: transistor S9014 S9014 s9014 Transistor s9014 transistor datasheet transistor npn s9014
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 S9014 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation. Collector-current 0.1A Collector-base Voltage 50V


    Original     		PDF S9014 -55OC 100mAdc, 10mAdc, 30MHz) s9014 equivalent transistor S9014 S9014 s9014 Transistor s9014 transistor datasheet transistor npn s9014

    Untitled

    Abstract: No abstract text available
    Text: tgr | « FORWARD INTERNATIONAL ELECTRONICS LID. S9015 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCYJXJW NOISE AMPLIFIER Package: TO-92 * Complement to S9014 * High Total Power Dissipation Pc=450mW * High Hfe And Good Linearity


    OCR Scan     		PDF S9015 S9014 450mW -100uA -100mA -10mA

    Untitled

    Abstract: No abstract text available
    Text: S9014 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPUFIER*LOW LEVEL&LOW NOISE Package: TO-92 * * * * * Com plem ent To S9015 C ollector C urrent :Ic= 100mA C ollector-Em itter Voltage: V ce=45Y


    OCR Scan     		PDF S9014 S9015 100mA 100uA 100mA 10VIe