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    S9013 NPN TRANSISTOR Search Results

    S9013 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    S9013 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    s9013 transistor

    Abstract: Transistor S9013 S9013 S9013 equivalent 0625W 112166 data sheet transistor s9013 S9013 to-92 s9013transistor S9013 TO92
    Text: S9013 S9013 TRANSISTOR NPN TO-92 FEATURE Power dissipation 1. EMITTER 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range Tj, Tstg: 1 2 3 -55℃ to +150℃


    Original     		S9013 500mA 30MHz s9013 transistor Transistor S9013 S9013 S9013 equivalent 0625W 112166 data sheet transistor s9013 S9013 to-92 s9013transistor S9013 TO92 PDF

    s9013 transistor

    Abstract: transistor S9013 S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR


    Original     		S9013 S9012 500mA 500mA, 30MHz S9013 s9013 transistor transistor S9013 transistor TO-92 S9013 S9013 TO92 data sheet transistor s9013 S9012 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS Ta=25℃ unless otherwise noted 3. COLLECTOR


    Original     		S9013 S9012 500mA 500mA, 30MHz PDF

    S9013

    Abstract: S9013 TO92
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 FEATURE z Complementary to S9012 z Excellent hFE linearity 1. EMITTER 2. BASE MAXIMUM RATINGS TA=25℃ unless otherwise noted 3. COLLECTOR


    Original     		S9013 S9012 500mA 500mA, 30MHz S9013 S9013 TO92 PDF

    s9013 transistor

    Abstract: J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz s9013 transistor J3 s9013 S9013 SOT-23 transistor S9013 S9013 data sheet transistor s9013 MARKING J3 SOT-23 S9012 J3 SOT23 marking J3 PDF

    S9013 SOT-23

    Abstract: J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23
    Text: S9013 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Complementary to S9012 Excellent hFE linearity MARKING: J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		S9013 OT-23 OT-23 S9012 500mA 500mA, 30MHz S9013 SOT-23 J3 s9013 transistor SOT23 J3 S9013 J3 s9013 transistor transistor S9013 s9013 s9013 transistor SOT23 J3 marking J3 MARKING J3 SOT-23 PDF

    s9013 transistor

    Abstract: S9013 transistor S9013 f-30MHz transistor s9012
    Text: S9013 Transistor NPN TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features — Complementary to S9012 Excellent hFE linearity — MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO VEBO Collector-Emitter Voltage


    Original     		S9013 S9012 500mA 500mA, 30MHz s9013 transistor S9013 transistor S9013 f-30MHz transistor s9012 PDF

    S9013 J3

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz S9013 J3 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9012 z Excellent hFE linearity 2. EMITTER 3. COLLECTOR MARKING: J3 MAXIMUM RATINGS (Ta=25 ℃unless otherwise noted)


    Original     		OT-23 OT-23 S9013 S9012 500mA 500mA, 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA） z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PC=300mW S9013 Pb Lead-free APPLICATIONS z High Collector Current.


    Original     		S9013 500mAï S9012. 300mW) OT-23 BL/SSSTC082 PDF

    J3 s9013

    Abstract: S9013 SOT-23 transistor S9013 S9013 transistor SOT23 J3 s9013 transistor s9013 equivalent S9013 J3 J3 SOT MARKING J3 SOT-23
    Text: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z High Collector Current. IC= 500mA） z Complementary To S9012. z Excellent HFE Linearity. z Power dissipation.(PC=300mW S9013 Pb Lead-free APPLICATIONS z High Collector Current.


    Original     		S9013 500mA S9012. 300mW) OT-23 BL/SSSTC082 J3 s9013 S9013 SOT-23 transistor S9013 S9013 transistor SOT23 J3 s9013 transistor s9013 equivalent S9013 J3 J3 SOT MARKING J3 SOT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN SOT–23 FEATURES z High Collector Current. z Complementary to S9012. z Excellent hFE Linearity. 1. BASE MARKING: J3 2. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		OT-23 S9013 S9012. PDF

    S9013

    Abstract: S9013 SOT-23 s9013 transistor datasheet
    Text: S9013 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Collector 3 3 Power dissipation 1 3.040 B 1.200 1.400 C 0.890 1.110 2 Emitter L 3 Tj, Tstg : - 55 C ~ + 150 C


    Original     		S9013 OT-23 500mA 30MHz 01-Jun-2005 S9013 S9013 SOT-23 s9013 transistor datasheet PDF

    transistor TO-92 S9013

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR NPN TO-92 1. EMITTER FEATURE Power dissipation 2. BASE PCM: 0.625 W (Tamb=25℃) 3. COLLECTOR Collector current 0.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range


    Original     		S9013 500mA 30MHz transistor TO-92 S9013 PDF

    s9013

    Abstract: transistor TO-92 S9013 transistor s9013 s9013 transistor transistor S9013 to92 SS9013FBU S9013 TO92 SS9013 SS9013-HBU S9013 to-92
    Text: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector


    Original     		SS9013 625mW) 500mA) SS9012 SS9013 O-92-3 SS9013FBU SS9013FTA SS9013FTF s9013 transistor TO-92 S9013 transistor s9013 s9013 transistor transistor S9013 to92 S9013 TO92 SS9013-HBU S9013 to-92 PDF

    S9013 equivalent

    Abstract: s9013 transistor S9013 transistor S9013 transistor TO-92 S9013 745173-2 data sheet transistor s9013 s9013 transistor datasheet
    Text: MCC   omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# S9013 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A


    Original     		S9013 625Watts -55OC 50mAdc, 500mAdc, 50mAdc) S9013 equivalent s9013 transistor S9013 transistor S9013 transistor TO-92 S9013 745173-2 data sheet transistor s9013 s9013 transistor datasheet PDF

    s9013 transistor

    Abstract: S9013 Transistor S9013 S9013 to-92 S9013 TO92
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S9013 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A


    Original     		S9013 625Watts -55OC 100uAdc, 40Vdc, 20Vdc, 500mAdc, 50mAdc) s9013 transistor S9013 Transistor S9013 S9013 to-92 S9013 TO92 PDF

    S9013 equivalent

    Abstract: Transistor S9013 s9013 transistor S9013 s9013 transistor datasheet S9013 data sheet data sheet transistor s9013 S9013 NPN Transistor transistor TO-92 S9013
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 S9013 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V


    Original     		S9013 625Watts -55OC 500mAdc, 50mAdc) 100mAdc) S9013 equivalent Transistor S9013 s9013 transistor S9013 s9013 transistor datasheet S9013 data sheet data sheet transistor s9013 S9013 NPN Transistor transistor TO-92 S9013 PDF

    S9013

    Abstract: s9013 transistor Transistor S9013 s9013 transistor datasheet data sheet transistor s9013 S9013 equivalent Transistor hFE CLASSIFICATION Marking CE S9013 npn transistor TO-92 S9013 transistor S9013 to92
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# S9013 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		S9013 625Watts -55OC 500mAdc, 50mAdc) 100mAdc) 20mAdc, S9013 s9013 transistor Transistor S9013 s9013 transistor datasheet data sheet transistor s9013 S9013 equivalent Transistor hFE CLASSIFICATION Marking CE S9013 npn transistor TO-92 S9013 transistor S9013 to92 PDF

    S9013

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components S9013 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		S9013 625Watts -55OC 100uAdc, S9013 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components S9013 Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		S9013 625Watts -55OC S9013 100uAdc, PDF

    S9013 to-92

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components S9013 Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		S9013 625Watts -55OC S9013 100uAdc, S9013 to-92 PDF

    Untitled

    Abstract: No abstract text available
    Text: | FORWARD INTERNATIONAL ELECTRONICS LID. S9013 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. Package: TO-92 * Complement to S9012 * Collector Current: Ic=500mA * High Total Power Dissipation: ptH>25mW


    OCR Scan     		S9013 S9012 500mA 100uA 500mA PDF

    59013

    Abstract: S9013 s9013 transistor IC-500
    Text: 1 S9013 couxcToq NPN General Purpose Transistors % - v€ v2 SOT-23 ri/nrrR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOItage Collector Current-Continuous Symbol V a lu e V CEO VCBO 25 lc Total Device Dissipation FR-5 Board 1)


    OCR Scan     		TA-25t TA-25 S9013 59013 s9013 transistor IC-500 PDF