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    S8050 TRANSISTOR Search Results

    S8050 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    S8050 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S8050D Transistor TO-92

    Abstract: S8050D S8050 equivalent transistor S8050 s8050 application note S8050 BR S8050 transistor TO-92 S8050 S8050C S8050 applications
    Text: MCC TM Micro Commercial Components S8050 S8050-B S8050-C S8050-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050 S8050-B S8050-C S8050-D 625Watts -55OC S8050D Transistor TO-92 S8050D S8050 equivalent transistor S8050 s8050 application note S8050 BR S8050 transistor TO-92 S8050 S8050C S8050 applications

    transistor S8050

    Abstract: transistor s8050 c .s8050 transistor s8050 transistor parameters S8050
    Text: UTC S8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.


    Original     		PDF S8050 S8050 700mA S8550 QW-R201-013 transistor S8050 transistor s8050 c .s8050 transistor s8050 transistor parameters

    transistor S8050

    Abstract: s8050 S8050 equivalent s8050 transistor S8550 equivalent S8050 applications s8050 transistor datasheet transistor TO-92 S8050 S8550 S8550 UTC
    Text: UTC S8050 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.


    Original     		PDF S8050 S8050 700mA S8550 QW-R201-013 transistor S8050 S8050 equivalent s8050 transistor S8550 equivalent S8050 applications s8050 transistor datasheet transistor TO-92 S8050 S8550 S8550 UTC

    transistor S8050

    Abstract: S8050 NPN S8050L s8050 npn transistor S8050 equivalent S8050 S8050 applications S8050 TRANSISTOR NPN FEATURES data sheet transistor s8050 transistor TO-92 S8050
    Text: UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR „ DESCRIPTION The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.


    Original     		PDF S8050 S8050 700mA S8550 S8050L S8050G S8050-xx-T92-B S8050-xx-T92-K S8050L-xx-T92-B S8050L-xx-T92-K transistor S8050 S8050 NPN S8050L s8050 npn transistor S8050 equivalent S8050 applications S8050 TRANSISTOR NPN FEATURES data sheet transistor s8050 transistor TO-92 S8050

    transistor S8050

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.


    Original     		PDF S8050 S8050 700mA S8550 S8050L-x-T92-B S8050G-x-T92-B S8050L-x-T92-K S8050G-x-T92-K QW-R201-013 transistor S8050

    transistor TO-92 S8050

    Abstract: npn transistor to 92 s8050 transistor S8050 S8050 s8050 transistor S8050 applications NPN S8050
    Text: UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.


    Original     		PDF S8050 S8050 700mA S8550 S8050L-x-T92-B S8050G-x-T92-B S8050L-x-T92-K S8050G-x-T92-K QW-R201-013 transistor TO-92 S8050 npn transistor to 92 s8050 transistor S8050 s8050 transistor S8050 applications NPN S8050

    S8050D

    Abstract: S8050c V S8050D S8050D Transistor TO-92
    Text: MCC TM Micro Commercial Components S8050-B S8050-C S8050-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050-B S8050-C S8050-D 625Watts -55OC S8050 100uAand S8050D S8050c V S8050D S8050D Transistor TO-92

    S8050l

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD S8050 NPN SILICON TRANSISTOR LOW V OLT AGE H I GH CU RREN T SM ALL SI GN AL N PN T RAN SI ST OR  DESCRI PT I ON The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier


    Original     		PDF S8050 S8050 700mA S8550 S8050L-x-T92-B S8050G-x-T92-B S8050L-x-T92-K S8050G-x-T92-K QW-R201-013 S8050l

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components S8050-B S8050-C S8050-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050-B S8050-C S8050-D 625Watts -55OC S8050

    S8050 TRANSISTOR

    Abstract: transistor s8050 BR S8050 S8050 NPN Power Transistor s8050 S8050 equivalent S8050 TRANSISTOR NPN FEATURES s8050 npn transistor br s8050 d .s8050 transistor
    Text: S8050 S8050 TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 2. BASE W (Tamb=25℃) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF S8050 500mA 500mA, 30MHz S8050 TRANSISTOR transistor s8050 BR S8050 S8050 NPN Power Transistor s8050 S8050 equivalent S8050 TRANSISTOR NPN FEATURES s8050 npn transistor br s8050 d .s8050 transistor

    S8050D

    Abstract: S8050D Transistor TO-92 S8050c S8050 applications s8050-d transistor TO-92 S8050 S8050-C
    Text: MCC TM Micro Commercial Components S8050-B S8050-C S8050-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050-B S8050-C S8050-D 625Watts -55OC S8050 100uA S8050D S8050D Transistor TO-92 S8050c S8050 applications s8050-d transistor TO-92 S8050

    S8050D

    Abstract: S8050D Transistor TO-92 s8050 application note S8050D Transistor S8050C
    Text: MCC TM Micro Commercial Components S8050-B S8050-C S8050-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050-B S8050-C S8050-D 625Watts -55OC S8050 100uAdc, S8050D S8050D Transistor TO-92 s8050 application note S8050D Transistor S8050C

    S8050D

    Abstract: s8050 application note s8050-d S8050C S8050d a S8050D Transistor S8050
    Text: MCC TM Micro Commercial Components S8050-B S8050-C S8050-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050-B S8050-C S8050-D 625Watts -55OC S8050 S8050D s8050 application note s8050-d S8050C S8050d a S8050D Transistor

    S8050D

    Abstract: S8050D Transistor TO-92 S8050C TO-92 S8050D V S8050D S8050B transistor S8050D S8050D Transistor s8050-d S8050c Transistor TO-92
    Text: MCC TM Micro Commercial Components S8050-B S8050-C S8050-D   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.


    Original     		PDF S8050-B S8050-C S8050-D 625Watts -55OC S8050 S8050D S8050D Transistor TO-92 S8050C TO-92 S8050D V S8050D S8050B transistor S8050D S8050D Transistor s8050-d S8050c Transistor TO-92

    SOT-23 J3Y

    Abstract: j3y transistor BR S8050 transistor S8050 sot-23 Marking J3Y transistor J3Y s8050 S8050 j3y S8050 equivalent Transistor S8050 j3y
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES S8050 Pb z High Collector Current. IC= 500mA） z Complementary To S8550. z Excellent HFE Linearity. z High total power dissipation.(PC=300mW Lead-free APPLICATIONS


    Original     		PDF S8050 500mA S8550. 300mW) OT-23 BL/SSSTC079 SOT-23 J3Y j3y transistor BR S8050 transistor S8050 sot-23 Marking J3Y transistor J3Y s8050 S8050 j3y S8050 equivalent Transistor S8050 j3y

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. S8550 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92 * Complement to S8050 * Collector Current :Ic=-500mA * High Total Power Dissipation: pC=625mW ABSOLUTE MAXIMUM RATINGS at Tamb=250C


    Original     		PDF S8550 S8050 -500mA 625mW -100uA -50mA -500mA

    j3y transistor

    Abstract: SOT-23 J3Y S8050
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors S8050 SOT-23 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 S8050 OT-23 S8550 500mA 30MHz j3y transistor SOT-23 J3Y S8050

    transistor S8050 pin configuration

    Abstract: transistor TO-92 S8050 S8050 equivalent BR S8050 transistor S8050 S8050 S8050 TRANSISTOR S8050 transistor TO-92 s8050 equivalents br s8050 d
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 S8050 Features • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V


    Original     		PDF S8050 625Watts -55OC 500mAdc, 50mAdc) 100mAdc) transistor S8050 pin configuration transistor TO-92 S8050 S8050 equivalent BR S8050 transistor S8050 S8050 S8050 TRANSISTOR S8050 transistor TO-92 s8050 equivalents br s8050 d

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S8050 TO-92 TRANSISTOR NPN FEATURES z Complimentary to S8550 z Collector current: IC=0.5A 1.EMITTER 2.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF S8050 S8550 500mA 500mA, 30MHz

    s8550 npn

    Abstract: S8050 npn BR S8050 npn s8050 d3 s8050 NPN S8550 npn s8050 d br s8050 d
    Text: S8050 NPN TO-92 Bipolar Transistors 1. EMITTER 2. BASE TO-92 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage


    Original     		PDF S8050 S8550 500mA 500mA, 30MHz s8550 npn S8050 npn BR S8050 npn s8050 d3 NPN S8550 npn s8050 d br s8050 d

    Untitled

    Abstract: No abstract text available
    Text: FORWARD INTERNATIONAL ELECTRONICS LTD. S8050 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92 * Complement to S8550 * Collector Current :Ic=500mA * High Total Power Dissipation: pC=625mW ABSOLUTE MAXIMUM RATINGS at Tamb=250C


    Original     		PDF S8050 S8550 500mA 625mW 100uA 500mA

    Transistor S8550 2TY

    Abstract: S8050 2TY transistor s8550 transistors s8550 S8550 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR PNP 1. BASE FEATURES z Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A z MARKING : 2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S8550 S8050 -50mA -500mA -500mA, Transistor S8550 2TY S8050 2TY transistor s8550 transistors s8550 S8550 transistor

    S8050

    Abstract: .j3y S8050 SOT-23 2S8050 S8050 npn SOT-23 J3Y S8050 j3y j3y transistor s8050 d h j3y transistor parameters
    Text: S8050 NPN Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES 3 Complimentary to S8550 SOT-23 Collector 1 Base Collector Current: IC=0.5A 2 Emitter A L 3 B S Top View


    Original     		PDF S8050 OT-23 S8550 500mA 01-Jun-2007 30MHz S8050 .j3y S8050 SOT-23 2S8050 S8050 npn SOT-23 J3Y S8050 j3y j3y transistor s8050 d h j3y transistor parameters

    Transistor S8550 2TY

    Abstract: marking 2ty Transistor 2TY sot-23 Marking 2TY .2TY S8050 2TY 2TY transistor s8550 transistor 2ty marking S8550 SOT-23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550 TRANSISTOR PNP 1. BASE FEATURES z Complimentary to S8050 2. EMITTER 3. COLLECTOR Collector current: IC=0.5A z MARKING : 2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 S8550 S8050 -100A, -50mA -500mA -500mA, Transistor S8550 2TY marking 2ty Transistor 2TY sot-23 Marking 2TY .2TY S8050 2TY 2TY transistor s8550 transistor 2ty marking S8550 SOT-23