O41 DIODE
Abstract: No abstract text available
Text: SKM 145GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .T 2 RG S8 D8 .T 2 VGJ S8 .03+ 2 RGS8A * 5(+ %41(/<-+( +=(0-?-(F VHJJ 7 VBJ E .03+( 2 WJ S8 VRJ E RJJ E Y RJ 7 VJ ]+ .03+( 2 RG S8 V_J E .03+( 2 WJ S8 VJJ E RJJ E .T 2 VGJ S8 V_JJ E .03+( 2 RG S8
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145GB176D
O41 DIODE
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marking s8 diode
Abstract: s8 marking RB751V-40 MARKING CODE S8
Text: RB751V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE PINNING Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbol
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RB751V-40
OD-323
OD-323
marking s8 diode
s8 marking
RB751V-40
MARKING CODE S8
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ADS8325IBDGKT
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments ADS8325 AD S8 32 5 AD S8 3 25 SBAS226C – MARCH 2002 – REVISED AUGUST 2007 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION 1 • • • • 23 • • •
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ADS8325
SBAS226C
16-Bit,
16-Bits
100kHz
10kHz
16-Bit
12-Bit
ADS7816
ADS7822
ADS8325IBDGKT
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Untitled
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments ADS8325 AD S8 32 5 AD S8 3 25 SBAS226C – MARCH 2002 – REVISED AUGUST 2007 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION 1 • • • • 23 • • •
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ADS8325
SBAS226C
16-Bit,
16-Bits
100kHz
10kHz
16-Bit
12-Bit
ADS7816
ADS7822
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416N
Abstract: ADS7816 ADS7822 ADS7826 ADS7827 ADS7829 ADS8320 ADS8325 ADS8325IBDGKT ADS8325IDGKR
Text: BurrĆBrown Products from Texas Instruments ADS8325 AD S8 32 5 AD S8 3 25 SBAS226C – MARCH 2002 – REVISED AUGUST 2007 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION 1 • • • • 23 • • •
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ADS8325
SBAS226C
16-Bit,
16-Bits
100kHz
10kHz
16-Bit
12-Bit
ADS7816
ADS7822
416N
ADS7822
ADS7826
ADS7827
ADS7829
ADS8320
ADS8325
ADS8325IBDGKT
ADS8325IDGKR
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DR-B 2002
Abstract: No abstract text available
Text: BurrĆBrown Products from Texas Instruments ADS8325 AD S8 32 5 AD S8 3 25 SBAS226C – MARCH 2002 – REVISED AUGUST 2007 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION 1 • • • • 23 • • •
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ADS8325
SBAS226C
16-Bit,
16-Bits
100kHz
10kHz
16-Bit
12-Bit
ADS7816
ADS7822
DR-B 2002
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ADS7816
Abstract: ADS7822 ADS7826 ADS7827 ADS7829 ADS8320 ADS8325 ADS8325IBDGKT ADS8325IDGKR
Text: BurrĆBrown Products from Texas Instruments ADS8325 AD S8 32 5 AD S8 3 25 SBAS226C – MARCH 2002 – REVISED AUGUST 2007 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION 1 • • • • 23 • • •
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ADS8325
SBAS226C
16-Bit,
16-Bits
100kHz
10kHz
16-Bit
12-Bit
ADS7816
ADS7822
ADS7822
ADS7826
ADS7827
ADS7829
ADS8320
ADS8325
ADS8325IBDGKT
ADS8325IDGKR
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ADS8365AI
Abstract: ADS8365 ADS8365IPAG ADS8365IPAGR OPA365 TQFP-64 fd 26 B0643
Text: AD ADS8365 S8 36 5 www.ti.com. SBAS362C – AUGUST 2006 – REVISED MARCH 2008 16-Bit, 250kSPS, 6-Channel, Simultaneous Sampling
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ADS8365
SBAS362C
16-Bit,
250kSPS,
16-Bit
200mW
TQFP-64
ADS8365
250kSPS
ADS8365AI
ADS8365IPAG
ADS8365IPAGR
OPA365
fd 26
B0643
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ADS8365AI
Abstract: No abstract text available
Text: AD ADS8365 S8 36 5 www.ti.com. SBAS362C – AUGUST 2006 – REVISED MARCH 2008 16-Bit, 250kSPS, 6-Channel, Simultaneous Sampling
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ADS8365
SBAS362C
16-Bit,
250kSPS,
16-Bit
200mW
TQFP-64
ADS8365
250kSPS
ADS8365AI
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Untitled
Abstract: No abstract text available
Text: AD ADS8365 S8 36 5 www.ti.com. SBAS362C – AUGUST 2006 – REVISED MARCH 2008 16-Bit, 250kSPS, 6-Channel, Simultaneous Sampling
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ADS8365
SBAS362C
16-Bit,
250kSPS,
16-Bit
200mW
TQFP-64
ADS8365
250kSPS
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Untitled
Abstract: No abstract text available
Text: AD AD S83 S8 17 317 ADS8317 www.ti.com . SBAS356D – JUNE 2007 – REVISED OCTOBER 2009 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling
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ADS8317
SBAS356D
16-Bit,
25LSB
16LSB
250kHz
200kHz
100kHz
10kHz
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Untitled
Abstract: No abstract text available
Text: AD AD S83 S8 17 317 ADS8317 www.ti.com . SBAS356D – JUNE 2007 – REVISED OCTOBER 2009 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling
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ADS8317
SBAS356D
16-Bit,
25LSB
16LSB
250kHz
200kHz
100kHz
10kHz
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ADS8317
Abstract: ADS8317IBDGKR ADS8317IBDGKT ADS8317IDGKR ADS8317IDGKT ADS8321 ADS8317IBDRBT
Text: AD AD S83 S8 17 317 ADS8317 www.ti.com . SBAS356D – JUNE 2007 – REVISED OCTOBER 2009 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling
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ADS8317
SBAS356D
16-Bit,
ADS8317
ADS8317IBDGKR
ADS8317IBDGKT
ADS8317IDGKR
ADS8317IDGKT
ADS8321
ADS8317IBDRBT
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Untitled
Abstract: No abstract text available
Text: AD AD S83 S8 17 317 ADS8317 www.ti.com . SBAS356D – JUNE 2007 – REVISED OCTOBER 2009 16-Bit, High-Speed, 2.7V to 5.5V microPower Sampling
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ADS8317
SBAS356D
16-Bit,
ADS8317
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BAT42WS
Abstract: BAT43WS
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 + FEATURES - MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol
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OD-323
BAT42WS/BAT43WS
OD-323
BAT42WS
BAT43WS
200mA
BAT42WS
BAT43WS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 + FEATURES - MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol
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OD-323
BAT42WS/BAT43WS
OD-323
BAT42WS
BAT43WS
200mA
BAT42WS
BAT43WS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol
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OD-323
BAT42WS/BAT43WS
OD-323
BAT42WS
BAT43WS
200mA
BAT42WS
BAT43WS
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s7 200
Abstract: BAT42W BAT43W
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BAT42W/BAT43W SCHOTTKY DIODES SOD-123 FEATURES MARKING: BAT42W S7 BAT43W S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol BAT42W/BAT43W
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OD-123
BAT42W/BAT43W
OD-123
BAT42W
BAT43W
200mA
BAT42W
BAT43W
s7 200
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s7 200
Abstract: BAT42W BAT42WS BAT43W BAT43WS
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 FEATURES MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol BAT42WS/BAT43WS
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OD-323
BAT42WS/BAT43WS
OD-323
BAT42WS
BAT43WS
200mA
BAT42W
BAT43W
s7 200
BAT42W
BAT43W
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Untitled
Abstract: No abstract text available
Text: S8 Relay Series Miniature high voltage relay Space saving package Isolation Voltage across contacts 4kV or 5kV dependant on coil voltage Isolation Voltage 7kV contact to coil 2.5A carry current Contact Specification Switch action Material Isolation across contacts
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S8-2405
350dc/300ac
ISO9001
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SHIMMER SENSOR
Abstract: No abstract text available
Text: DATASHEET KEY FEATURES tRiMBLe S8 totaL Station THE POWER TO EXCEL Delivering major workflow innovations for both typical surveying and specialized applications, you now have the power to redefine your performance potential. Video-assisted robotic measurement
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Untitled
Abstract: No abstract text available
Text: S8 Relay Series Miniature high voltage relay Space saving package Isolation Voltage across contacts 4kV or 5kV dependant on coil voltage Isolation Voltage 7kV contact to coil 2.5A carry current Contact Specification Switch action Material Isolation across contacts
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S8-2405
350dc/300ac
ISO9001
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Untitled
Abstract: No abstract text available
Text: S8-08 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current8.0 @Temp (øC) (Test Condition)50’ V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)8.0 @Temp. (øC) (Test Condition)25’
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S8-08
Voltage800
Current50u
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1T26 DIODE
Abstract: altera flex10k Diode SY 356
Text: FLEX 10K Embedded Programmable Logic Family May 1883. ver. 3.11 Features. ÖateSheet S8 £8 The industry's first embedded programmable logic device PLD family, providing system integration in a single device Embedded array for implementing megafunctions, such as
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