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    transistor SMD s72

    Abstract: S72 SMD smd s72 smd transistor s72 smd transistor marking S72 smd marking S72 SmD s72 2N7002 transistor marking s72 2N7002 S72 SOT-23 2N7002 SOT-23
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002 PIN COFIGURATION G= GATE S= SOURCE SOT-23 Formed SMD Package D= DRAIN Marking 2N7002=S72 Designed for High Speed Pulse Amplifier and Drive Application


    Original     		2N7002 OT-23 2N7002 C-120 2N7002Rev021104E transistor SMD s72 S72 SMD smd s72 smd transistor s72 smd transistor marking S72 smd marking S72 SmD s72 2N7002 transistor marking s72 2N7002 S72 SOT-23 2N7002 SOT-23 PDF

    s72 sot 23

    Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
    Text: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA


    Original     		BS870 2N7002 OT-23 BS850 22N7002 BS170 s72 sot 23 transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 transistor s72 S72 Transistor PDF

    mosfet s72

    Abstract: No abstract text available
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • • 0.103(2.60) • 0.056(1.40) 0.047(1.20) • 0.086(2.20) • RDS(ON), VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 0.006(0.15)MIN. FEATURES 0.079(2.00) 0.008(0.20) 0.070(1.80)


    Original     		2N7002 500mA OT-23 MIL-STD-750 0084grams 2010-REV mosfet s72 PDF

    S72 2n7002

    Abstract: 2N7002 MARKING s72 transistor marking s72 2N7002 S72 SOT-23 2N7002 2N7002 MARKING S72 marking s72 sot 23 transistor s72 marking s72
    Text: 2N7002 DMOS Transistors N-Channel FEATURES SOT-23 ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ .122 (3.1) .118 (3.0) .016 (0.4) Top View .016 (0.4) .045 (1.15) .037 (0.95) .037(0.95) .037(0.95) .007 (0.175) .005 (0.125) 2 max. .004 (0.1) 1 .056 (1.43) .052 (1.33) 3 .102 (2.6)


    Original     		2N7002 OT-23 OT-23 S72 2n7002 2N7002 MARKING s72 transistor marking s72 2N7002 S72 SOT-23 2N7002 2N7002 MARKING S72 marking s72 sot 23 transistor s72 marking s72 PDF

    S72 2n7002

    Abstract: 2N7002 MARKING transistor marking s72 2N7002 transistor s72 2N7002 MARKING s72 s72 sot 23 s72 mosfet
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002 Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1


    Original     		2N7002 7002/S72 S72 2n7002 2N7002 MARKING transistor marking s72 2N7002 transistor s72 2N7002 MARKING s72 s72 sot 23 s72 mosfet PDF

    Marking Code S72

    Abstract: s72 sot 23 s72 mosfet 2N7002 S72 SOT-23
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 .016 (0.4) G 0.037 (0.95) 0.037 (0.95) Pin Configuration .007 (0.175) .005 (0.125) max. .004 (0.1)


    Original     		2N7002 230mA O-236AB OT-23) OT-23 E8/10K 30K/box 500mA 200mA 200mA, Marking Code S72 s72 sot 23 s72 mosfet 2N7002 S72 SOT-23 PDF

    transistor s72

    Abstract: transistor marking s72 2N7002
    Text: 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Low On-Resistance: RDS ON Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data


    Original     		2N7002 OT-23 OT-23, MIL-STD-202, 500mA DS11303 transistor s72 transistor marking s72 2N7002 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002 Features • • • • • • • • Halogen free available upon request by adding suffix "-HF"


    Original     		2N7002 7002/S72 PDF

    S72 2n7002

    Abstract: 2N7002 MARKING s72 S72 marking
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002 Features • • • • • • • Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1


    Original     		2N7002 7002/S72 25OCcustomers S72 2n7002 2N7002 MARKING s72 S72 marking PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N7002 Features • • • • • • • Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1


    Original     		2N7002 7002/S72 PDF

    Marking Code S72

    Abstract: No abstract text available
    Text: 2N7002W N-CHANNEL ENHANCEMENT MODE MOSFET SOT- 323 This device is an N-Channel enhancement-mode MOSFET in the industrystandard, small surface mount SOT-323 SC-70 package. This device is ideal for portable applications where board space is at a premium. 3


    Original     		2N7002W OT-323 SC-70) OT-323 2N7002W T/R13 Marking Code S72 PDF

    transistor marking s72

    Abstract: transistor s72 Marking Code S72 s72 transistor transistor marking code s72 SOT-23 s72 sot 23 Transistor s72 sot23
    Text: DATA SHEET 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR CURRENT 200 mAmp FEATURE Unit: inch mm SOT-23 N-channel enhancement mode field effect transistor,de- .007(.20) MIN. VOLTAGE 60 Volts .119(3.00) .110(2.80) .056(1.40) .047(1.20) signed for high speed pulse amplifier and drive applica-


    Original     		2N7002 OT-23 transistor marking s72 transistor s72 Marking Code S72 s72 transistor transistor marking code s72 SOT-23 s72 sot 23 Transistor s72 sot23 PDF

    Marking Code S72

    Abstract: mosfet 2n7002 S72 marking DIODE 30V transistor marking s72 2N7002 MARKING s72 2N7002 MARKING transistor s72 2N7002 code s72
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET Voltage Range 60 Volts Current 230 mAmpere TO-236AB SOT-23 Features a a a a a a a 0.020(0.51) 0.015(0.37) Advanced trench process technology High density cell design for ultra-low on-resistance High input impedance


    Original     		2N7002 O-236AB OT-23) OT-23 45NCE 500mA Marking Code S72 mosfet 2n7002 S72 marking DIODE 30V transistor marking s72 2N7002 MARKING s72 2N7002 MARKING transistor s72 2N7002 code s72 PDF

    2N7002 marking code 72

    Abstract: Marking Code S72 2N7002 MARKING s72 s72 mosfet S72 2n7002 2N7002 marking code 72 J
    Text: 2N7002 N-Channel Enhancement-Mode MOSFET VDS 60V RDS ON 3.0Ω ID 230mA TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) .016 (0.4) 0.035 (0.9) Pin Configuration 0.037 (0.95) 0.037 (0.95) .045 (1.15) .037 (0.95) .007 (0.175)


    Original     		2N7002 230mA O-236AB OT-23) OT-23 E8/10K 30K/box 30K/box 2N7002 marking code 72 Marking Code S72 2N7002 MARKING s72 s72 mosfet S72 2n7002 2N7002 marking code 72 J PDF

    S72 2n7002

    Abstract: 2N7002 PANJIT 2N7002 2N7002 MARKING s72 s72 sot 23
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω 3 • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays


    Original     		2N7002 500mA 2002/95/EC OT-23 MIL-STD-750 S72 2n7002 2N7002 PANJIT 2N7002 2N7002 MARKING s72 s72 sot 23 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@75mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays


    Original     		2N7002 500mA 2002/95/EC OT-23 MIL-STD-750 PDF

    S72 2n7002

    Abstract: No abstract text available
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. 0.103(2.60) • Specially Designed for Battery Operated Systems, Solid-State Relays


    Original     		2N7002 500mA OT-23 MIL-STD-750 2010-REV S72 2n7002 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • RDS ON , VGS@10V,IDS@500mA=5Ω • RDS(ON), VGS@4.5V,IDS@75mA=7.5Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Specially Designed for Battery Operated Systems, Solid-State Relays


    Original     		2N7002 500mA 2002/95/EC OT-23 MIL-STD-750 60-Drain PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 60V N-Channel Enhancement Mode MOSFET 0.120 3.04 0.110(2.80) • Advanced Trench Process Technology • Specially Designed for Battery Operated Systems, Solid-State Relays 0.103(2.60) • High Density Cell Design For Ultra Low On-Resistance 0.056(1.40)


    Original     		2N7002 2002/95/EC 500mA OT-23 MIL-STD-750 0084grams 2010-REV OT-23 PDF

    K72 so

    Abstract: transistor s72 S72 marking transistor marking s72 marking 702 2N7002-01 k72 sot 23 TRANSISTOR S72 Transistor
    Text: 2N7002-01 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Low On-Resistance: 2.5£2 Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 - H : h“ A TOP VIEW l2l , lîl Mechanical Data Case: SO T-23, Molded Plastic


    OCR Scan     		2N7002-01 OT-23 IL-STD-202, -250pA 300ns, DS30026 K72 so transistor s72 S72 marking transistor marking s72 marking 702 2N7002-01 k72 sot 23 TRANSISTOR S72 Transistor PDF

    k72 transistor sot 23

    Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
    Text: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW


    OCR Scan     		2N7002-01 OT-23, MIL-STD-202, OT-23 300ns, DS30026 2N7002-01 k72 transistor sot 23 transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23 PDF

    2n7002

    Abstract: S72 2n7002 transistor s72 2N7002 MARKING s72 2N7002 MARKING 2N7002C s72 sot 23
    Text: 2N7002 N-Channel Enhancement Mode DMOS Transistor Features - high input impedance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway - no secondary breakdown Pin configuration 1 = Drain, 2 = Gate, 3 = Source.


    OCR Scan     		2N7002 OT-23 2n7002 S72 2n7002 transistor s72 2N7002 MARKING s72 2N7002 MARKING 2N7002C s72 sot 23 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7002 DMOS Transistors N-Channel FEATURES SOT -23 High input impedance High-speed switching No minority carrier storage time CMOS logic compatible input No m inority carrier storage tim e C M O S logic com patible input No thermal runaway No secondary breakdown


    OCR Scan     		2N7002 OT-23 PDF

    transistor marking s72

    Abstract: transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702
    Text: 2N7002 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEMZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~*\ : h - A TOP VIEW


    OCR Scan     		2N7002 OT-23, MIL-STD-202, OT-23 DS11303 2N7002 transistor marking s72 transistor s72 k72 transistor 702 TRANSISTOR sot-23 s72 sot 23 k72 transistor sot 23 S72 2n7002 S72 transistor marking 702 2n7002 702 PDF