GT50J101
Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive
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s5j53
Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require
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E0010A
BCE0010A
3503C-0109
s5j53
S5783F
GT30J322
S5783
Electronic IH rice cooker
GT50j101
MG30T1AL1
igbt induction cooker
MG60M1AL1
mosfet 500V 50A
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Untitled
Abstract: No abstract text available
Text: GT60M104 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4//s Max. Low Saturation Voltage : V q e (sat)~^-?V (Max.) Enhancement-Mode
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GT60M104
S5J12
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S5J12
Abstract: IC60N gt60m104
Text: SILICON N CHANNEL MOS TYPE GT60M104 U n i t in n m HIGH POWER SWITCHING APPLICATIONS. 0 3 .3 ± 0 .2 2 0 .5 MAX . H i g h Inp u t I m p e d a n c e . High Speed : tf=0.4us Max„ . Low Saturation Voltage : Vc£(s a t)*3.7V(Max.) • H ^ L «12 M ■ . Enhancement-Mode
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GT60M104
S5J12
S5J12
IC60N
gt60m104
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GT60M104
Abstract: S5J12 GT60M
Text: GT60M104 TO SH IBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : V^ e (sat) = 3.7V (Max.) Enhancement-Mode
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GT60M104
GT60M1
S5J12
2-21F2C
GT60M104
GT60M
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S5J12
Abstract: GT60M104 2-21F2C
Text: TOSHIBA GT60M104 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm High Input Impedance High Speed 20.5MAX. 0 3.3 ±0.2 : tf=0.4;i*s Max. .T Z i. Low Saturation Voltage : V g e (sat) = 3.7V (Max.)
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GT60M104
GT60M1
S5J12
2-21F2C
GT60M104
2-21F2C
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Untitled
Abstract: No abstract text available
Text: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode
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GT60M104
S5J12
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Untitled
Abstract: No abstract text available
Text: G T 6 M 1 5 HIGH PO W ER SW IT C H IN G A P P LIC A T IO N S. • U n i t in m m H igh In p u t Im pedance • H igh Speed : tf= 0 .4 /js M a x . • L o w S a t u r a t i o n V o l t a g e : V d r ( Sa t ) = 3 . 2 V ( M a x .) • E nhancem ent-M ode •
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S5J12
GT60M105
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Untitled
Abstract: No abstract text available
Text: GT60M104 T O SH IB A TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT G T 6 0 M 1 04 Unit in mm HIGH POWER SWITCHING APPLICATIONS High Input Impedance High Speed : tf=0.4^s Max. Low Saturation Voltage : Vqe (sat) = 3.7V (Max.) Enhancement-Mode
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GT60M104
S5J12
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