Untitled
Abstract: No abstract text available
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B, S5295G, S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295B,
S5295G,
S5295B
S5295G
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95J DIODE TOSHIBA
Abstract: S5295 DIODE 95J S5295B S5295G S5295J
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B, S5295G, S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295B,
S5295G,
S5295B
S5295G
95J DIODE TOSHIBA
S5295
DIODE 95J
S5295J
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Untitled
Abstract: No abstract text available
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295J
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95J DIODE TOSHIBA
Abstract: DIODE 95J S5295B S5295G S5295J S5295
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B, S5295G, S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295B,
S5295G,
S5295B
S5295G
95J DIODE TOSHIBA
DIODE 95J
S5295J
S5295
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Untitled
Abstract: No abstract text available
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B, S5295G, S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) · Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295B,
S5295G,
S5295B
S5295G
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Untitled
Abstract: No abstract text available
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295J
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S5295G
Abstract: No abstract text available
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295J
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S5295G
Abstract: S5295B S5295J 95J DIODE TOSHIBA
Text: S5295B,S5295G,S5295J TOSHIBA Fast Recovery Diode Silicon Diffused Type S5295B,S5295G,S5295J High Speed Rectifier Applications fast recovery • Average Forward Current: IF (AV) = 0.5 A (Ta = 50°C) • Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V
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S5295B
S5295G
S5295J
S5295B
S5295G
S5295J
95J DIODE TOSHIBA
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S5295B
Abstract: S5295G S5295J
Text: SIYU R S5295B . S5295J Fast Recovery Rectifier Reverse Voltage 100 to 600 V Forward Current 0.5 A DO-41 Features 1.0 25.4 MIN .034(0.9) DIA .028(0.7) . Low reverse leakage . High forward surge capability . High temperature soldering guaranteed: .205(5.2)
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S5295B
S5295J
DO-41
S5295G
5295B
S5295B
S5295G
S5295J
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S5295B
Abstract: S5295G S5295J
Text: BL GALAXY ELECTRICAL S5295B Z -S5295J(Z) VOLTAGE RANGE: 50 - 600 V CURRENT: 0.5 A FAST RECOVERY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol
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S5295B
---S5295J
DO-41
STD-750
S5295G
S5295J
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Untitled
Abstract: No abstract text available
Text: SIYU R S5295B/ S5295G / S5295J 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 100 to 600V Forward Current 0.5A 反向电压 100 - 600 V 正向电流 0.5 A 特征 Features DO-41 •低的反向漏电流 Low reverse leakage 1.0 25.4
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S5295B/
S5295G
S5295J
DO-41
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Untitled
Abstract: No abstract text available
Text: SIYU R S5295B/ S5295G / S5295J 塑封快恢复整流二极管 Plastic Fast Recover Rectifier Reverse Voltage 100 to 600V Forward Current 0.5A 反向电压 100 - 600 V 正向电流 0.5 A 特征 Features DO-41 ・低的反向漏电流 Low reverse leakage 1.0 25.4
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S5295B/
S5295G
S5295J
DO-41
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S5295B
Abstract: S5295
Text: SIYU R S5295B/ S5295G / S5295J 塑封快恢复整流二极管 反向电压 100 - 600 V 正向电流 0.5 A DO-41 1.0 25.4 MIN Low reverse leakage •正向浪涌承受能力较强 High forward surge capability ·高温焊接保证 High temperature soldering guaranteed:
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S5295B/
S5295G
S5295J
DO-41
S5295B
S5295G
S5295B
S5295
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S5295B
Abstract: S5295G S5295J
Text: S5295B/G/J FAST RECOVERY RECTIFIERS DO - 41 PRV : 100 - 600 Volts Io : 0.5 Ampere FEATURES : * * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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S5295B/G/J
DO-41
UL94V-O
MIL-STD-202,
S5295B
S5295G
S5295J
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2CZRU2
Abstract: 2AP10 IS1835 2ap9 2cz1834 is2473 is1885 2CZRG2 2Cz32 is2471
Text: Fast Switching Rectifiers TYP Maximum Maximum Peak Forward Recurrent Average Surge Current Peak Half Forward Reverse Rectified sine-wave Voltage Current Superimposed Maximum Forward Voltage IF AV A 100m IFSM VFM IS1553 VRRM V 60 A 1.0 IS1554 50 100m IS1555
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IS1553
IS1554
IS1555
IS1834
DO-35
IS1835
IS1885
DO-41
2CZRU2
2AP10
IS1835
2ap9
2cz1834
is2473
is1885
2CZRG2
2Cz32
is2471
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zener diode 1NU 9F
Abstract: diode 1NU DLA DIODE TOSHIBA diode 1NU 7.1 NH5 Diode Schottky diode TO220 15A 1000V diode 1NU 5.1 diode 1NU 6F 10lc48 GU 1R5
Text: 2004-3 PRODUCT GUIDE Small and Medium Diodes semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Contents 1. Diode Product Tree 3 2. Selection Guide by Product Categories 4 3. Definitions and Terms 8 4. Symbols and Terms 9 5. Device Characteristics 5.1 General-Purpose Rectifiers:
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BCE0001A
BCE0001B
zener diode 1NU 9F
diode 1NU
DLA DIODE TOSHIBA
diode 1NU 7.1
NH5 Diode
Schottky diode TO220 15A 1000V
diode 1NU 5.1
diode 1NU 6F
10lc48
GU 1R5
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TOSHIBA RECTIFIER
Abstract: s5295g S5295J rectifier 95J DIODE TOSHIBA marking code 95b
Text: TO SH IB A S5295B,S5295G,S5295J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE S5295B, S5295G, S5295J HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY Average Forward Current Repetitive Peak Reverse Voltage • Reverse Recovery Time y&XIIV!UIV! RAT!NG
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S5295B
S5295G
S5295J
S5295B,
S5295G,
S5295J
TOSHIBA RECTIFIER
S5295J rectifier
95J DIODE TOSHIBA
marking code 95b
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S5295B
Abstract: No abstract text available
Text: TO SH IBA S5295B,S5295G,S5295J TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE S5295B, S5295G, S5295J Unit in mm HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • • • Average Forward Current Repetitive Peak Reverse Voltage Reverse Recovery Time
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S5295B
S5295G
S5295J
S5295B,
S5295G,
S5295J
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95J DIODE TOSHIBA
Abstract: DIODE 95J S5295J S5295B s5295g DO-15 JEDEC
Text: S5295B/G/J O SILICON DIFFUSED TYPE FAST RECOVERY DIODE Unit in mm HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • Average Forward Current : IF(AV) =0.5A • Repetitive Peak Reverse Voltage : V m m = 100—600V • Reverse Recovery Time : 1.5^s MAXIMUM RATING
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S5295B/G/J
00--600V
S5295B
S5295G
S5295J
S5295J
DO-15
SC-39
95J DIODE TOSHIBA
DIODE 95J
DO-15 JEDEC
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S5295D
Abstract: 1NH61 1TH61 S5295G S5295J RECTIFIER 25T R100n 1TH-61
Text: 9097250 TOSHIBA <DISCRETE/OPTO> 39C 02237 f-A ö I 'It TOSHIBA O I S C R E T E / O P T O } 1500V 0.3A 1TH61 „ K n :n v F R Y n iO D E D E l ^ O i V S S O 0D02E37 5 | ~ Unit in i M A X IM U M RATINGS C H A R A C T E R IS T IC Repetitive Peak R everse Voltage
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0D02E37
1TH61
1NH61
100mA,
100ns,
DO-15
SC-39
S5295D
1TH61
S5295G
S5295J
RECTIFIER 25T
R100n
1TH-61
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6B4B41
Abstract: 1J4B41 1B4B41 6J4B41 6G4B41 1G4B41 4b4b41 4G4B41 10G4B41 15B4B42
Text: Rectifiers Average Forward Current «- General Purpose Rectifiers High-Speed Rectifiers -> Peak Repetitive Reverse Voltage Average Forward Current <- \ A \ Package trr 100V 400V 600V C2.F2 1000V 1500V 0.2A DO-41 S 1.5 ms TFR3N TRF3T 0.3A DO-41 SS 4 ms TFR4N
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DO-41
DO-15
D041SS
6B4B41
1J4B41
1B4B41
6J4B41
6G4B41
1G4B41
4b4b41
4G4B41
10G4B41
15B4B42
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1BH62
Abstract: IS1835 1DH62 30JG11 0R06YXZ31 1n61a1 25FXF12 1GH62 toshiba 6jg11 1JH62
Text: p p 9097250 Q 1 » TOSHIBA | N' \ v ^ DDDHEm <DI S C R E TE /O P TO f STANDARD RECTIFIERS _ M D T -O f- 0 / 39C 0 2 2 1 4 p .io ~ p .24_ ~ _ Average Forward Current —» Peak Reverse Voltage 1A 1.2A 1.5A 100V S5277B 1S1885
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S5277B
1S1885
1BZ61
S5277D
1S1886
1DZ61
S5277G
1S1887
1GZ61
S5277J
1BH62
IS1835
1DH62
30JG11
0R06YXZ31
1n61a1
25FXF12
1GH62
toshiba 6jg11
1JH62
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s1854
Abstract: toshiba f5d BRIDGE RECTIFIER TOSHIBA 3B F0R3D S6565G BRIDGE RECTIFIER TOSHIBA 3b 4 f0r3b 4G4B44 1D4B42 3529A
Text: — wtmmmmmmmm TOSHIBA 9. Power Supply Systems 9-1 4 0 0 ~ 5 0 0 V Switching Transistors ^ ^ \P a c k a g e lC A ^ 2 5 \ T 0 -2 2 0 A B TO -2 20 IS T O -3 P II] TO-3P (N) TO-3P (L i - 2SC2552 2SC3560/1 # 2 S K 5 2 7 /8 # - - 2SC2553 S 3529A # 2 S K 5 3 0 /1 #
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2SC3560/1
2SC3497
2SC3626
2SC3562
2SC2552
2SC2553
2SC3625
2SC2555
2SC3306
2SK693#
s1854
toshiba f5d
BRIDGE RECTIFIER TOSHIBA 3B
F0R3D
S6565G
BRIDGE RECTIFIER TOSHIBA 3b 4
f0r3b
4G4B44
1D4B42
3529A
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1gw transistor
Abstract: TSA1000 1J4B41 1G4B41 1B4B41 magnetron power control scr driver ic for rectifier 3 phase scr drive circuit diagram 4G4B41 1B4B42
Text: mAPPLICATION CIRCUIT 1. Igniter . 448 2. Strobe . 449
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SM12JZ47
TLP666G/TLP666J
TIP561G/TLP561J
SM16GZ47/SM16J47
SM16GZ51
/SM16JZ51
SM25GZ51/SM25JZ51
TSS8G48S/TSS8J48S
TSS12G48S/TSS12J48S
TSS16G48S/TSS16J46S
1gw transistor
TSA1000
1J4B41
1G4B41
1B4B41
magnetron power control
scr driver ic for rectifier 3 phase
scr drive circuit diagram
4G4B41
1B4B42
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