Untitled
Abstract: No abstract text available
Text: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD212G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726(L)S4-K/H/L
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128Mx72
HYMD212G726
184-pin
128Mx4
400mil
184pin
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Untitled
Abstract: No abstract text available
Text: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD212G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726(L)S4-K/H/L
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128Mx72
HYMD212G726
184-pin
128Mx4
400mil
184pin
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intel dq67 circuit diagram
Abstract: HYM72V12C756BLS4-P HYM72V12C756BLS4-S HYM72V12C756BS4-S RA12
Text: 128Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C756B L S4 Series DESCRIPTION The HYM72V12C756B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six
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128Mx72
PC100
64Mx4
HYM72V12C756B
128Mx72bits
64Mx4bits
400mil
54pin
168pin
intel dq67 circuit diagram
HYM72V12C756BLS4-P
HYM72V12C756BLS4-S
HYM72V12C756BS4-S
RA12
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PDF
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PC133 SDRAM registered DIMM 512MB hynix
Abstract: HYM72V12C736BLS4-H HYM72V12C736BLS4-K HYM72V12C736BS4-H HYM72V12C736BS4-K RA12 BYTE65
Text: 128Mx72 bits PC133 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C736B L S4 Series DESCRIPTION The HYM72V12C736B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six
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128Mx72
PC133
64Mx4
HYM72V12C736B
128Mx72bits
64Mx4bits
400mil
54pin
168pin
PC133 SDRAM registered DIMM 512MB hynix
HYM72V12C736BLS4-H
HYM72V12C736BLS4-K
HYM72V12C736BS4-H
HYM72V12C736BS4-K
RA12
BYTE65
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PDF
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APQ8064
Abstract: i2c/qualcomm uart IFC6400
Text: IFC6400 Snapdragon S4 Pro Qseven™ Computing Platform Processing, Power, and Performance • Qualcomm Snapdragon S4 Pro APQ8064 • 4-core Krait , 1.7GHz, 2MB L2 cache 2 GB on-board DDR3 PCDDR 533MHz Independent Clock Scaling Per Core
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IFC6400
APQ8064
533MHz)
HD1080p
QCA6234
IFC6400
IFC6400-00-P1
SYS6440-00-P1
APQ8064
i2c/qualcomm uart
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PDF
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RH96N74
Abstract: No abstract text available
Text: TOCOS 33 mII B% Messrs TOCOS AMERICA ,INC. & $ Model Carbon film variable resistor rn;f.fif#S4 Customer Specification Number @4i#MS8 Customer Part Name B%$P&S4 Customer Part Number %%R58 TOCOS Part Name %4kif#S 4 TOCOS Specification Number RY -7 7 2 8 R E
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O273-52-6031
RH96N74
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PDF
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Untitled
Abstract: No abstract text available
Text: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726A L S4-M/K/H/L DESCRIPTION Preliminary Hynix HYMD525G726A(L)S4-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix YMD525G726A(L)S4M/K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glassepoxy substrate. Hynix HYMD525G726A(L)S4-M/K/H/L series provide a high performance 8-byte interface in 5.25"
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256Mx72
HYMD525G726A
184-pin
YMD525G726A
128Mx4
400mil
184pin
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PDF
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PC133 SDRAM registered DIMM 512MB hynix
Abstract: No abstract text available
Text: 128Mx72 bits PC133 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C736B L S4 Series DESCRIPTION The HYM72V12C736B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six 64Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II stack package, one 2Kbit EEPROM in
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128Mx72
PC133
64Mx4
HYM72V12C736B
128Mx72bits
64Mx4bits
400mil
54pin
168pin
PC133 SDRAM registered DIMM 512MB hynix
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PDF
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Untitled
Abstract: No abstract text available
Text: 128Mx72 bits PC100 SDRAM Registered DIMM with PLL, based on 64Mx4 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V12C756B L S4 Series DESCRIPTION The HYM72V12C756B(L)S4 Series are 128Mx72bits ECC Synchronous DRAM Modules. The modules are composed of thirty six 64Mx4bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II stack package, one 2Kbit EEPROM in
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128Mx72
PC100
64Mx4
HYM72V12C756B
128Mx72bits
64Mx4bits
400mil
54pin
168pin
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PDF
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rcas 4250
Abstract: No abstract text available
Text: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726C L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD212G726C(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726C(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy
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128Mx72
HYMD212G726C
184-pin
128Mx4
400mil
184pin
rcas 4250
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PDF
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RT 5510
Abstract: No abstract text available
Text: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD212G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy
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128Mx72
HYMD212G726
184-pin
128Mx4
400mil
184pin
RT 5510
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PDF
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DDR200
Abstract: DDR266A DDR266B du 7670
Text: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD525G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix HYMD525G726(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy
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Original
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256Mx72
HYMD525G726
184-pin
128Mx4
400mil
184pin
DDR200
DDR266A
DDR266B
du 7670
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PDF
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Untitled
Abstract: No abstract text available
Text: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726 L S4-K/H/L DESCRIPTION Preliminary Hynix HYMD525G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 256Mx72 high-speed memory arrays. Hynix HYMD525G726(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy
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Original
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256Mx72
HYMD525G726
184-pin
128Mx4
400mil
184pin
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PDF
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DDR200
Abstract: DDR266A DDR266B
Text: 128Mx72 bits Registered DDR SDRAM DIMM HYMD212G726 L S4-K/H/L DESCRIPTION Hynix HYMD212G726(L)S4-K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD212G726(L)S4K/H/L series consists of eighteen stacked 128Mx4 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy
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Original
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128Mx72
HYMD212G726
184-pin
128Mx4
400mil
184pin
DDR200
DDR266A
DDR266B
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PDF
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RH96N74
Abstract: JIS-C-6443
Text: Specifications m31J %%% & #& 6 Model Carbon film variable resistor rnw~s4 Customer Specification Number @P+k#aZ& Customer Part Name rn%%fiS4 Customer Yart Number R+kRS& TOCOS Part Name %+i.ffBS% TOCOS Specification Number RY -7 7 2 7 f % E P . ) % W Signed by
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O46-255-2560
ChY-7727
RH96N74
JIS-C-6443
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Untitled
Abstract: No abstract text available
Text: HYMD525G726B P S4-K/H/L SERIAL PRESENCE DETECT Rev. 0.0 -K Byte Function described Number of Bytes written into serial memory at module manufacturer 1 Total Number of Bytes in SPD device 2 Fundmetal Memory Type 3 Number of Row addresses on this assembly 4
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HYMD525G726B
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DDR200
Abstract: DDR266 DDR266A DDR266B YMD525G726A
Text: 256Mx72 bits Registered DDR SDRAM DIMM HYMD525G726A L S4-M/K/H/L Document Title 256Mx72 bits Registered DDR SDRAM DIMM Revision History No. History Draft Date 0.1 Initial draft Jan. 2003 0.2 1) Corrected IDD Spec. 2) Defined Pin Cap. Spec. 3) Corrected some typos
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256Mx72
HYMD525G726A
184-pin
DDR200
DDR266
DDR266A
DDR266B
YMD525G726A
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PDF
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Untitled
Abstract: No abstract text available
Text: HYMD212G726D P S4-K/H/L SERIAL PRESENCE DETECT Rev. 0.0 -K Byte Function described Number of Bytes written into serial memory at module manufacturer 1 Total Number of Bytes in SPD device 2 Fundmetal Memory Type 3 Number of Row addresses on this assembly 4
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HYMD212G726D
B27592
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PDF
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ACS9010
Abstract: XTAL 32.768MHz 8B10B ACS4050 ACS405CS 3.2768MHz crystal
Text: ACS405CS Main Features * Full duplex serial transmission through a single fiber-optic cable without the need for expensive WDM devices. AC S4 05 CS 4000 SERIES Acapella Optical Modem IC * E2 data-rates of 8.448Mbps or 4*E1 at 2.048Mbps. T2 data rates of 6.312Mbps or 4*T1 at 1.544Mbps.
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ACS405CS
448Mbps
048Mbps.
312Mbps
544Mbps.
64kbps.
ACS9010
XTAL 32.768MHz
8B10B
ACS4050
3.2768MHz crystal
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PDF
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S4 9C
Abstract: 10D 9F 11010 2f 1001 S4 1C LCM103 LCM109 100-10 k1 d2s3
Text: LCM109 大型仪表控制柜液晶显示模块 1 LCM109 内存 RAM 对应显示笔段表 8.左→右为 1→10 位,P 为小数点,S 为三角箭头,K 为 D3 S4 1D 1DP 2D 2DP 3D 3DP 4D 4DP 5D 5DP 6D 6DP 7D 7DP 8D D2 S3 1E 1C 2E 2C 3E 3C 4E 4C 5E 5C 6E 6C 7E
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LCM109
LCM103
S4 9C
10D 9F
11010
2f 1001
S4 1C
LCM103
LCM109
100-10 k1
d2s3
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PDF
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DL1414T
Abstract: DL1414 DL-1414T DL1414T display arklone p garry DIP SOCKET SIEMENS 8080 circuit using dl1414t dl 1414t HOYA Optics
Text: SIEMENS DL1414T .112" Red, 4-Character 16 Segment Plus Decimal Alphanumeric Intelligent Display*0 With Memory/Decoder/Driver Package Dimensions in Inches [Tim f7 lolt'UHICÌ.! xx I n I & S4) XXX t 00S ( 1?7 ) FEATURES 0.112" High, Magnified Monolithic Character
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OCR Scan
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DL1414T
DL1414T
DL1414
DL-1414T
DL1414T display
arklone p
garry DIP SOCKET
SIEMENS 8080
circuit using dl1414t
dl 1414t
HOYA Optics
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PDF
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Untitled
Abstract: No abstract text available
Text: » « H Y U N D A I e r ie s 1M x 4H_bŸjt 5C1M40 S4 0D R3 ABM Sw ,th 4C A S PRELIMINARY DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CSSO controls DQO,
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OCR Scan
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5C1M40
HY514403B
1AC15-00-MAY94
4b750fi6
HY514403BJ
HY514403BU
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PDF
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Untitled
Abstract: No abstract text available
Text: F-206-1 Te c M ODS-F-8P8C-L-S4-Y-G-TH MODS-F-8P8C-S-4-5-SM MODS-F-8P8C-U-6-1-TH MOD JACK WITH LEDS MODS-F SERIES For complete specifications and recommended PCB layouts see www.samtec.com?MODS-F Insulator Material: Nylon 46 For both -SM and -TH Contact Material:
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OCR Scan
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F-206-1
3-75266G0
7747-Fax:
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PDF
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NTE4049
Abstract: NTE4051B NTE4050B NTE4060B NTE4056B NTE4053B NTE4052B NTE4045B NTE4046B NTE4047B
Text: INTEGRATED CIRCUITS - CMOS COMPLEMENTARY METAL OXIDE SILICON NTE4044B 16-Lead DIP, See Diag. 249 Quad 3-State NAND R/S Latch Q4 r i N.C. g si B - R1 Q Enable M R2 □ S2 B VssM ^ 0 Vdd 0 S4 Q R4 0 Q1 g R3 001 Phase Pulses Sn B 0 0 2 Phase Comp 1 Out Q VDD
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OCR Scan
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NTE4044B
16-Lead
NTE4045B
21-Stage
14-Laad
Pln14,
NTE4046B
NTE4047B
NTE4049
NTE4051B
NTE4050B
NTE4060B
NTE4056B
NTE4053B
NTE4052B
NTE4045B
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PDF
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