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    S2A TRANSISTOR Search Results

    S2A TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    S2A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code s2a SOT23

    Abstract: smbt3906 MMBT3906 infineon
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


    Original     		PDF SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 marking code s2a SOT23 smbt3906 MMBT3906 infineon

    MMBT3906

    Abstract: SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


    Original     		PDF SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161 EHP00771 EHP00768 Jul-28-2003 MMBT3906 SMBT3906 EHP00772 TRANSISTOR S2A 1N916 MMBT3904 SMBT3904

    Untitled

    Abstract: No abstract text available
    Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E


    Original     		PDF SMBT3906/ MMBT3906 SMBT3904/ MMBT3904 VPS05161

    power 22E

    Abstract: TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A
    Text: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


    Original     		PDF SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Aug-20-2001 EHP00769 power 22E TRANSISTOR S2A s2A SOT23 1N916 SMBT3904 SMBT3906 H12E sot23 transistor marking 12E IC MARKING NS-05 marking s2A

    3906

    Abstract: transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E
    Text: SMBT 3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT 3904 NPN 2 1 Type Marking SMBT 3906 s2A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings


    Original     		PDF 100mA VPS05161 OT-23 EHP00772 EHP00773 Oct-14-1999 EHP00768 EHP00769 3906 transistor 3906 k0300 H12E 1N916 EHP00772 3906 pnp ic power 22E

    power 22E

    Abstract: TRANSISTOR S2A SMBT3906 1N916 SMBT3904
    Text: SMBT3906 PNP Silicon Switching Transistor 3  High DC current gain: 0.1 mA to 100 mA  Low collector-emitter saturation voltage  Complementary type: SMBT3904 NPN 2 1 Type SMBT3906 Marking s2A Pin Configuration 1=B 2=E VPS05161 Package SOT23 3=C Maximum Ratings


    Original     		PDF SMBT3906 SMBT3904 VPS05161 EHP00773 EHP00768 Nov-30-2001 EHP00769 power 22E TRANSISTOR S2A SMBT3906 1N916 SMBT3904

    Untitled

    Abstract: No abstract text available
    Text: FJX3906 PNP Epitaxial Silicon Transistor Feature • General-Purpose Transistor 3 2 1 SC-70 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method FJX3906TF S2A SC70 3L Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The


    Original     		PDF FJX3906 SC-70 FJX3906TF

    SA201

    Abstract: No abstract text available
    Text: polyfet rf devices SA201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SA201 SA201

    SP202

    Abstract: No abstract text available
    Text: polyfet rf devices SP202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SP202 SP202

    S8201

    Abstract: TRANSISTOR S2A
    Text: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF S8201 S8201 TRANSISTOR S2A

    S8201

    Abstract: VDMOS
    Text: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF S8201 S8201 VDMOS

    SC201

    Abstract: No abstract text available
    Text: polyfet rf devices SC201 General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. "Polyfet" process features low feedback and output capacitances,


    Original     		PDF SC201 SC201

    SQ201

    Abstract: VDMOS TRANSISTOR S2A s2a transistor
    Text: polyfet rf devices SQ201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SQ201 SQ201 VDMOS TRANSISTOR S2A s2a transistor

    SK202

    Abstract: No abstract text available
    Text: polyfet rf devices SK202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SK202 SK202

    SP203

    Abstract: No abstract text available
    Text: polyfet rf devices SP203 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SP203 SP203

    SK204

    Abstract: No abstract text available
    Text: polyfet rf devices SK204 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SK204 SK204

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices S8201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF S8201

    TRANSISTOR S2A

    Abstract: SD201
    Text: polyfet rf devices SD201 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 4 Watts Single Ended


    Original     		PDF SD201 TRANSISTOR S2A SD201

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SQ201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SQ201

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SP201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SP201

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SP202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SP202

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices S8202 General Description Silicon VDMOS and LDMOS transistors designed specifically SILICON GATE ENHANCEMENT MODE for broadband RF applications. RF POWER VDMOS TRANSISTOR Suitable for Military Radios, Cellular and Paging Amplifier Base 8 Watts Single Ended


    Original     		PDF S8202

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SP201 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SP201

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SK202 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SK202