Untitled
Abstract: No abstract text available
Text: H igh perform ance 128KX8 5 V CMOS Flash EEPROM H A S29F010 II 1 2 8 K X 8 CMOS Flash EEPROM Features • O r g a n iz a t io n : 12 8 K x 8 b its • JEDEC s ta n d a r d w r i t e c y c le c o m m a n d s - p ro te c ts da ta fro m accidental changes • S e c to r E rase a r c h ite c tu r e
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128KX8
S29F010
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FLASH MEMORY 29F
Abstract: IC 7107 Pin diagram 29f flash 29F 128 16 S29F010 TMS29F010JL4
Text: S29F010 1 048 576-BIT FLASH/BLOCK ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS01OA • Organization 128K x 8 or 4 Blocks of AUGUST 1990 — REVISED DECEMBER 1990 N and J P ackages Top View • HVCMOS Technology NC [ , A16f 2 A15[ 3 • All Inputs/Outputs TTL Compatible
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TMS29F010
576-BIT
SMJS01OA
29F010-100
29F010-120
29F010-150
29F010-200
29F010-12
29F010-15
29F010-20
FLASH MEMORY 29F
IC 7107 Pin diagram
29f flash
29F 128 16
S29F010
TMS29F010JL4
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15A16
Abstract: S29F010
Text: Features • O rganization: 12 8K x 8 bits • JEDEC standard w rite cycle com m ands • Sector Erase architecture - Four 32K x 8 sectors • Single 5 . 0 ± 0 .5 V pow er supply for read /w rite operations • Program /erase cycle end signals: - protects data from accidental changes
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AS29F010
32-pin
AS29F010
AS29F010-120LC
AS29F010-120TC
AS29F010-150PC
AS29F010-150LC
AS29F010-150TC
15A16
S29F010
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29f010 PLCC
Abstract: 29F010 DIP 29F010 AS29F010 AL124 52HA
Text: Il i^l i IVI f I [ n.i in i- BB A S / ‘> 1 0 I 0 A I / K K x K S V C M O S I ì.isli I I I’ K O M I > N k X ,X C M O S Mi i s l i I I I ' H O M Features • JEDEC standard w rite cycle com m ands - protects data from accidental changes • P rogram /erase cycle end signals:
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AS29F010
AS29F010
32-pin
AS29F010-120PC
AS29F010-lS0PC
AS29F010-120LC
AS29F010-150LC
AS29F010-120TC
29f010 PLCC
29F010 DIP
29F010
AL124
52HA
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programmer for 29F010
Abstract: 29F010 29F010-12 29F010-15 29F010-10 TMS29F010 29F010-120 TMS29F010JL4 VEFH 29F010_120
Text: S29F010 1 048 576-BIT FLASH/BLOCK ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SM JS010A — A U G U S T 1990 — REVISED DECEM BER 1990 • Organization 128K 32K x 8 Each x 8 or 4 Blocks of N and J Packages Top View NC • Single 5-V Power Supply
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TMS29F010
576-BIT
SMJS010A
29F010-100
29F010-120
29F010-150
29F010-200
29F010-12
29F010-15
29F010-20
programmer for 29F010
29F010
29F010-12
29F010-10
29F010-120
TMS29F010JL4
VEFH
29F010_120
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Untitled
Abstract: No abstract text available
Text: 1‘ c I f <>i 11i.iii< r •■ A S ' M i o I A 1/KKxH S V C M O S I l.isli I I l’ K( )M I > K k X ,S C M O S l lusli I I11’ l i O M Features ’ JEDEC standard write cycle commands • Organization:!28K x 8 bits • Sector Erase architecture - p ro te c ts da ta fro m accid en tal changes
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AS29F010
32-pin
AS29F010-120PC
AS29F010-IS0PC
AS29F010-120LC
AS29F010-150LC
AS29F010-120TC
AS29F010-150TC
AS29F
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S29F010
Abstract: No abstract text available
Text: S29F010 131072 BY 8-BIT FLASH MEMORY ^ • ^ _ SMJS840-NOVEMBER 1997 ^ Single Power Supply FM PACKAGE TOP VIEW 5 V ± 10% • • • Organization . . . 131072 by 8 Bits Eight Equal Sectors of 16K Bytes - Any Combination of Sectors Can Be
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TMS29F010
SMJS840-NOVEMBER
S29F010
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TMS29F010
Abstract: No abstract text available
Text: S29F010 131072 BY 8-BIT FLASH MEMORY S M J S 8 4 0 - N O VEM BER 1997 • Single Power Supply 5 V ± 10% • • Organization . . . 131072 by 8 Bits Eight Equal Sectors of 16K Bytes - Any Combination of Sectors Can Be Erased - Any Combination of Sectors Can Be
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TMS29F010
SMJS840-
SMJS840
R-PQCC-J32)
4040201-4/B
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