da53
Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
Text: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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128/144Mbit
256Kx16/18x32s)
128/144-Mbit
600MHz
800MHz
DL0059-00
da53
HY5R128HC745
HY5R128HC840
HY5R128HC845
HY5R144HC653
HY5R144HC745
HY5R144HC840
HY5R144HC845
HY5R144HM745
HY5R144HM845
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direct rdram rambus 1200
Abstract: No abstract text available
Text: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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600MHz
DL-0118-07
direct rdram rambus 1200
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da53
Abstract: DB26 0195c Outline T39
Text: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other
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512Kx16/18x32s)
600MHz
DL-0118-010
da53
DB26
0195c
Outline T39
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da53
Abstract: DB26
Text: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any
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8Mx16/18x4i)
DL0117-010
da53
DB26
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HYB25M144180C-653
Abstract: HYB25R128160C-653 HYB25R128160C-745 HYB25R128160C-840 HYB25R128160C-845 HYB25R144180C-653 HYB25R144180C-745 HYB25R144180C-840 HYB25R144180C-845 Direct rdram
Text: Direct RDRAM 128/144-MBit 256Kx16/18×32s Overview The Rambus Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required.
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128/144-MBit
128/144-Mbit
TEST77
TEST78
HYB25M144180C-653
HYB25R128160C-653
HYB25R128160C-745
HYB25R128160C-840
HYB25R128160C-845
HYB25R144180C-653
HYB25R144180C-745
HYB25R144180C-840
HYB25R144180C-845
Direct rdram
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diode t29
Abstract: EDR2518ABSE EDR2518ABSE-8C-E T45 to DB9 EDR2518ABSE-8C EDR2518ABSE-AD EDR2518ABSE-AE EDR2518ABSE-AE-E EDR2518ABSE-AEP EDR2518ABSE-AEP-E
Text: PRELIMINARY DATA SHEET 288M bits Direct Rambus DRAM EDR2518ABSE 512K words x 18 bits × 32s banks Description Features The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including
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EDR2518ABSE
EDR2518AB
EDR2518AB
1066MHz
288Mbits
800MHz
9375ns
M01E0107
diode t29
EDR2518ABSE
EDR2518ABSE-8C-E
T45 to DB9
EDR2518ABSE-8C
EDR2518ABSE-AD
EDR2518ABSE-AE
EDR2518ABSE-AE-E
EDR2518ABSE-AEP
EDR2518ABSE-AEP-E
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da53
Abstract: DB26 BE1210 DB62 ROP10
Text: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 512Kx16/18x32s Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application
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256/288-Mbit
512Kx16/18x32s)
256/288-Mbit
600MHz
800MHz
DL0060
DL0060
da53
DB26
BE1210
DB62
ROP10
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da53
Abstract: DB26 DL010
Text: RAMBUS Direct RDRAM Preliminary Information 256/288-Mbit 1Mx16/18x16d Overview The Rambus Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application
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256/288-Mbit
1Mx16/18x16d)
256/288-Mbit
600MHz
800MHz
DL0105
DL0105
da53
DB26
DL010
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da48
Abstract: uPD488448FB-C60-53-DQ1 uPD488448FF-C60-53-DQ1 uPD488448FF-C60-53-DQ2 uPD488448FF-C71-45-DQ1 uPD488448FF-C71-45-DQ2 uPD488448FF-C80-45-DQ1 uPD488448FF-C80-45-DQ2 DA63 DB33 circuit diagram
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. E 128 M-bit Direct Rambus DRAM EO Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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PD488448
128M-bit
da48
uPD488448FB-C60-53-DQ1
uPD488448FF-C60-53-DQ1
uPD488448FF-C60-53-DQ2
uPD488448FF-C71-45-DQ1
uPD488448FF-C71-45-DQ2
uPD488448FF-C80-45-DQ1
uPD488448FF-C80-45-DQ2
DA63
DB33 circuit diagram
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da53
Abstract: DB26 KM416RD8AC KM418RD8AC
Text: KM416RD8AC D /KM418RD8AC(D) Direct RDRAM 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.01 October 1999 Page -2 Rev. 1.01 Oct. 1999 KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ Revision History Version 1.0 (July 1999) - Preliminary
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KM416RD8AC
/KM418RD8AC
128/144Mbit
da53
DB26
KM418RD8AC
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD488448 for Rev. P 128 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where
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PD488448
128M-bit
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Untitled
Abstract: No abstract text available
Text: 1066 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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512Kx16/18x32s)
600MHz
DL-0118-050
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Untitled
Abstract: No abstract text available
Text: KM416RD8AC D /KM418RD8AC(D) Preliminary Direct RDRAM 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.0 July 1999 Page -2 Rev. 1.0 Jul. 1999 KM416RD8AC(D)/KM418RD8AC(D) Preliminary Direct RDRAM™ Revision History Version 1.0 (July 1999) - Preliminary
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KM416RD8AC
/KM418RD8AC
128/144Mbit
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745 B36 diode
Abstract: micron sensor spd 357 RM01 MT8VR6416A
Text: PRELIMINARY‡ 32, 64, 128 MEG x 16/18 RAMBUS RIMM MODULES RAMBUS RIMM MODULE MT4VR3216A, MT4VR3218A, MT8VR6416A, MT8VR6418A, MT16VR12816A, MT16VR12818A For the latest data sheet revisions, please refer to the Micron Web site: www.micronsemi.com/datasheets/modds.html
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MT4VR3216A,
MT4VR3218A,
MT8VR6416A,
MT8VR6418A,
MT16VR12816A,
MT16VR12818A
184-pin
128MB
256MB
745 B36 diode
micron sensor
spd 357
RM01
MT8VR6416A
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RDRAM Clock
Abstract: No abstract text available
Text: 1066 MHz RDRAM 256/288 Mb 4Mx16/18x4i Advance Information Overview The RDRAM device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high
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DL-0119-030
RDRAM Clock
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da53
Abstract: DB26 DL0054 ycl dc 101
Text: 1066 MHz RDRAMâ 256/288 Mb 4Mx16/18x4i Advance Information Overview • The Rambus DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other
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4Mx16/18x4i)
DL-0119-010
da53
DB26
DL0054
ycl dc 101
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Untitled
Abstract: No abstract text available
Text: DATA SHEET 288M bits Direct Rambus DRAM µPD488588 512K words x 18 bits × 32s banks Description Features The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any
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PD488588
PD488588
288Mbits
600MHz
800MHz
M01E0107
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Untitled
Abstract: No abstract text available
Text: Preliminary Direct RDRAM K4R271669A for Short Channel 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM Short Channel Revision 0.951 May 2000 Page -2 Rev. 0.951 May 2000 Preliminary Direct RDRAM™ K4R271669A for Short Channel Revision History
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K4R271669A
128Mbit
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circuit of rowa television
Abstract: toshiba b54
Text: TOSHIBA TH M R2E2Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 18-BIT 64M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2E2Z is a 33,554,432-word by 18-bit direct rambus dynamic RAM module consisting of 2 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.
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432-WORD
18-BIT
18-bit
TC59RM818MB
B2M-wordX18
32M-wordX
600MHz
32M-word
711MHz
circuit of rowa television
toshiba b54
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Untitled
Abstract: No abstract text available
Text: THMR2N16-6/-7/-8 TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 268,435,456-WORD BY 16-BIT 512M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N16 is a 268,435,456-word by 16-bit direct rambus dynamic RAM module consisting of 16 TC59RM816MB and Direct Rambus DRAMs on a printed circuit board.
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THMR2N16-6/-7/-8
456-WORD
16-BIT
THMR2N16
TC59RM816MB
256M-word
600MHz
-16CSP
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TH M R2 E4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 18-BIT 128M Bytes Direct Rambus D RAM MODULE DESCRIPTION The THMR2E4Z is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.
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108f864-WORD
18-BIT
864-word
18-bit
TC59RM818MB
64M-word
64M-wordXl8
600MHz
711MHz
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TC59RM716GB
Abstract: 9T20T
Text: TOSHIBA TEN TA TIVE T O S H IB A M O S DIGITAL IN T E G R A T E D C IR C U IT TC59RM716GB-8 SILIC O N M O N O LIT H IC Overview T he D irect R am bus D R A M D irect R D R A M ™ is a general-purpose high perform ance m em ory device suitable for use in a broad ra n g e of applications including com puter memory, graphics, video a n d any o th er applications
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TC59RM716GB-8
128-M
800-M
TEST77
TEST78
P-BGA54-1312-1
TC59RM716GB
9T20T
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64H40
Abstract: circuit of rowa television CM05
Text: TOSHIBA TH M R2 N8Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 16-BIT 256M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N8Z is a 134,217,728-word by 16-bit direct rambus dynamic RAM module consisting of 8 TC59RM816MB Direct Rambus DRAMs on a printed circuit board.
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728-WORD
16-BIT
16-bit
TC59RM816MB
128M-word
600MHz
128M-wordX16
711MHz
64H40
circuit of rowa television
CM05
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DGA4
Abstract: loqb 47KQ B23A B85A Toshiba Rambus IC
Text: TOSHIBA THMR2N2Z-6/-7/-8 T O SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-W ORD BY 16-BIT 64M Bytes Direct Rambus D R A M M O D U LE DESCRIPTION The THMR2N2Z is a 33,554,432-word by 16-bit direct rambus dynamic RAM module consisting of 2
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432-WORD
16-BIT
16-bit
TC59RM816MB
32M-wordXl6
32M-word
600MHz
711MHz
DGA4
loqb
47KQ
B23A
B85A
Toshiba Rambus IC
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