Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1126A FH105A RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6 http://onsemi.com Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package
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ENA1126A
FH105A
FH105A
2SC5245A,
A1126-8/8
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marking 579 sot363
Abstract: No abstract text available
Text: Ordering number : ENA1125A FH102A RF Transistor http://onsemi.com 10V, 70mA, fT=7GHz NPN Dual MCP6 Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package
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ENA1125A
FH102A
FH102A
2SC5226A,
A1125-8/8
marking 579 sot363
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702 transistor smd code
Abstract: HTT1132E 853 smd 6-pin 2SC5849 2SC5872 equivalent ZO 607 smd transistor 805 239 0532 smd transistor 718 transistor smd 661 752
Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872
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HTT1132E
REJ03G0008-0100Z
2SC5872
2SC5849
702 transistor smd code
HTT1132E
853 smd 6-pin
2SC5849
2SC5872
equivalent ZO 607
smd transistor 805 239
0532
smd transistor 718
transistor smd 661 752
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equivalent ZO 607
Abstract: 2sc5872 2SC5849 HTT1132E 702 smd transistor
Text: HTT1132E Silicon NPN Epitaxial Twin Transistor REJ03G0008-0100Z Rev.1.00 Apr.14.2003 Features • Include 2 transistors in a small size SMD package: EMFPAK–6 6 Leads: 1.2 x 0.8 x 0.5 mm Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5872
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HTT1132E
REJ03G0008-0100Z
2SC5872
2SC5849
equivalent ZO 607
2sc5872
2SC5849
HTT1132E
702 smd transistor
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ACA2604RS29P8
Abstract: ACA2604R aca2604 ACA2601 triplex
Text: ACA2604 Fiber-to-the-Home RF Amplifier ADVANCED PRODUCT INFORMATION - Rev 0.2 FEATURES • 50 - 870 MHz Operating Frequency • High Linearity: 65 dBc CTB/CSO 79 Chan. • Low Equivalent Input Noise: 4.5 pA/rtHz • 22 dB Gain Adjust AC A • 400 Differential Input Impedance: No
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ACA2604
ACA2601
ACA2604
ACA2604RS29P8
ACA2604R
ACA2601
triplex
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1008CS-331XJLB
Abstract: ACA2604 MURATA TRIPLEXER BLM15HD102SN1D GRM155R71H471KA01D ACA2601 GRM1885C1H102JA01D GRM1885C1H1R0CZ01D GRM1885C1HR50CZ01D GRM188R61C105KA93D
Text: ACA2604 Fiber-to-the-Home RF Amplifier Data Sheet - Rev 2.1 FEATURES • 50 - 870 MHz Operating Frequency • High Linearity: 65 dBc CTB/CSO 79 Chan. • Low Equivalent Input Noise: 4.5 pA/rtHz • 22 dB Gain Adjust AC A • 400 Differential Input Impedance: No
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ACA2604
ACA2601
ACA2604
1008CS-331XJLB
MURATA TRIPLEXER
BLM15HD102SN1D
GRM155R71H471KA01D
ACA2601
GRM1885C1H102JA01D
GRM1885C1H1R0CZ01D
GRM1885C1HR50CZ01D
GRM188R61C105KA93D
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ACA2604R
Abstract: MURATA TRIPLEXER
Text: ACA2604 Fiber-to-the-Home RF Amplifier DATA SHEET - Rev 2.0 FEATURES • 50 - 870 MHz Operating Frequency • High Linearity: 65 dBc CTB/CSO 79 Chan. • Low Equivalent Input Noise: 4.5 pA/rtHz • 22 dB Gain Adjust AC A • 400 Differential Input Impedance: No
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ACA2604
ACA2601
ACA2604
ACA2604R
MURATA TRIPLEXER
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2SA1424
Abstract: NEC 2532 276-137 2SA1978 2SC2351 NPN transistor mhz s-parameter 2sc2351 equivalent
Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1978 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES High fT _0.2 2.8+ Equivalent NPN transistor is the 2SC2351. • Alternative of the 2SA1424. _0.2 2.9+ Symbol Rating Unit Collector to Base Voltage
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2SA1978
2SC2351.
2SA1424.
2SA1424
NEC 2532
276-137
2SA1978
2SC2351
NPN transistor mhz s-parameter
2sc2351 equivalent
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pmb6250
Abstract: smarti 6250 ao21 pmb-6250 52863 PMB 2362 pmb 6250 smarti P-TSSOP-10 PMB2362
Text: Wireless Components Dual LNA PMB 2362 Version 1.1 Specification January 2000 preliminary CONFIDENTIAL Revision History: Current Version: January 2000 Previous Version:Data Sheet Page in previous Version Page (in current Version) Subjects (major changes since last revision)
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82GHz:
pmb6250
smarti 6250
ao21
pmb-6250
52863
PMB 2362
pmb 6250
smarti
P-TSSOP-10
PMB2362
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2SC5245
Abstract: 2SC5415 FH203 IT00483 18896
Text: Ordering number:ENN6179 NPN Epitaxial Planar Silicon Composite Transistor FH203 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6
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ENN6179
FH203
FH203]
2SC5245)
2SC5415)
FH203
2SC5245
2SC5415,
2SC5415
IT00483
18896
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IT00483
Abstract: 2SC5245 2SC5415 FH203 IT00491
Text: Ordering number:ENN6179 NPN Epitaxial Planar Silicon Composite Transistor FH203 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6
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ENN6179
FH203
FH203]
2SC5245)
2SC5415)
FH203
2SC5245
2SC5415,
IT00483
2SC5415
IT00491
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CGB8002-SC
Abstract: CGB8002-SC-0G00 CGB8002-SC-0G0T
Text: DC-2.8 GHz InGaP HBT 3.3V, Matched Gain Block Amplifier April 2008 - Rev 28-Apr-08 CGB8002-SC Features Functional Block Diagram SOT-89 14 dBm Linear Power @ 2140 MHz 17 dB Gain @ 2140 MHz 15 dB Gain @ 2700 MHz 37dBm OIP3 @ 2700 MHz 22 dBm P1dB @ 2140 MHz
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28-Apr-08
CGB8002-SC
37dBm
OT-89
CGB8002-SC
CGB8002-SC-0G00
CGB8002-SC-0G0T
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UMTS receiver
Abstract: BGA622L7 BGA622 DCS1800 GSM900
Text: A pp l ic a t io n N o t e, R e v . 2. 0 , J a n. 2 00 7 A p p li c a t i o n N o t e N o . 0 8 9 T h e B G A 62 2 L 7 S i l i c o n - G er m an i u m U n i v e r s a l L o w Noise Amplifier MMIC in UMTS Receiver Application R F & P r o t e c ti o n D e v i c e s
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BGA622L7
UMTS receiver
BGA622
DCS1800
GSM900
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BGA622L7
Abstract: BGA622 DCS1800 GSM900 MMIC cross
Text: A p p l i c a t i o n N o t e , R e v . 2 . 0 , F e b . 2 00 7 A p p li c a t i o n N o t e N o . 0 9 0 T h e B G A 62 2 L 7 S i l i c o n - G er m an i u m U n i v e r s a l L o w Noise Amplifier MMIC in GPS Receiver A p pl i c a t i o n s R F & P r o t e c ti o n D e v i c e s
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BGA622L7
BGA622
DCS1800
GSM900
MMIC cross
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CY62256
Abstract: CY62256L CY62256LL
Text: fax id: 1068 CY62256 32Kx8 Static RAM Features output enable OE and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected. The CY62256 is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and
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CY62256
32Kx8
CY62256
450-mil-wide
300-mil
600-mil
CY62256L
CY62256LL
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Untitled
Abstract: No abstract text available
Text: Linear Power Amplifier 2.4 - 2.5 GHz, 802.11b/g Preliminary V2P *Lead Free* MAAPSS0075 Lead Free Features • · · · · · · · · Functional Schematic Ideal for 802.11b/g +26.5 dBm P1dB Typical at 3.3 V 32 dB Gain Typical 802.11b compliant to 23 dBm Pout
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11b/g
MAAPSS0075
12-lead
MAAPSS0075
11b/g
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DCS-1800MHz
Abstract: No abstract text available
Text: RF3809 RF3809GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Features High Output Power of 2.0W P1dB High Linearity High Power-Added Efficiency Thermally-Enhanced Packaging VREF
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RF3809GaAs
RF3809
450MHz
2500MHz
RF3809
2002/95/EC
DS080717
DCS-1800MHz
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2.45 Ghz power amplifier 45 dbm
Abstract: PQFN footprint MAAPSS0075TR MAAPSS0075TR-3000 M513 MAAPSS0075 MAAPSS0075SMB 0402 footprint
Text: RoHS Compliant Linear Power Amplifier 2.4 - 2.5 GHz, 802.11b/g MAAPSS0075 V1 Features • • • • • • • • • • • • • Functional Schematic Ideal for 802.11b/g +26 dBm P1dB Typical at 3.3 V 29.5 dB Gain Typical 802.11b compliant to 23 dBm POUT
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11b/g
MAAPSS0075
12-Lead
MAAPSS0075
2.45 Ghz power amplifier 45 dbm
PQFN footprint
MAAPSS0075TR
MAAPSS0075TR-3000
M513
MAAPSS0075SMB
0402 footprint
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2.45 Ghz power amplifier 45 dbm
Abstract: No abstract text available
Text: RoHS Compliant Linear Power Amplifier 2.4 - 2.5 GHz, 802.11b/g MAAPSS0075 V2 Features • • • • • • • • • • • • • Functional Schematic Ideal for 802.11b/g +26 dBm P1dB Typical at 3.3 V 29.5 dB Gain Typical 802.11b compliant to 23 dBm POUT
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11b/g
12-Lead
MAAPSS0075
12lead
2.45 Ghz power amplifier 45 dbm
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RF3809413
Abstract: No abstract text available
Text: RF3809 RF3809GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Features High Output Power of 2.0W P1dB High Linearity High Power-Added Efficiency Thermally-Enhanced Packaging VREF
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RF3809GaAs
RF3809
450MHz
2500MHz
RF3809
pre-driv60
DS080221
RF3809413
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PDF
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equivalent ZO 607
Abstract: j200 transistor 2SC5226 2SC5245 FH202 TS4162
Text: Ordering number:ENN6220 NPN Epitaxial Planar Silicon Composite Transistor FH202 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6
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ENN6220
FH202
FH202]
2SC5226)
TS4162)
FH202
2SC5245
TS4162,
equivalent ZO 607
j200 transistor
2SC5226
TS4162
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Untitled
Abstract: No abstract text available
Text: RF3807 RF3807GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Features Output Power>0.5W P1dB High Linearity High Power-Added Efficiency Thermally-Enhanced Packaging VREF 1 NC
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RF3807GaAs
RF3807
450MHz
2700MHz
RF3807
DS080220
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equivalent ZO 607
Abstract: j200 transistor 2SC5226 2SC5245 FH202 TS4162
Text: Ordering number:ENN6220 NPN Epitaxial Planar Silicon Composite Transistor FH202 VCO OSC Circuit Applications Package Dimensions unit:mm 2160 0.25 6 5 0.15 4 0 to 0.1 3 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Base2 5 : Emitter2 6 : Base1 SANYO : MCP6
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ENN6220
FH202
FH202]
2SC5226)
TS4162)
FH202
2SC5245
TS4162,
equivalent ZO 607
j200 transistor
2SC5226
TS4162
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CY62256L-70SNI
Abstract: No abstract text available
Text: gyp : CY62256 C'i- 32Kx8StaticRAM output enable UE and three-state drivers. This device has an automatic power-down feature, reducing the power consump tion by 99.9% when deselected. The CY62256 is in the stan dard 450-mil-wide (300-mil body width) SOIC, TSOP, and
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OCR Scan
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CY62256
CY62256
450-mil-wide
300-mil
600-mil
CY62256L-70SNI
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