GaAs p-i-n diodes
Abstract: advantages of resistor uPD5710TK DC bias of gaas FET s21 diode "voltage controlled resistor" uPG2012
Text: CMOS SWITCHES vs. PIN DIODE and GaAs SWITCHES SWITCHES – critical parameters to consider Insertion loss: The loss S21 through the switch when the path is ON (in dB. Isolation: The loss (S21) through the switch when the path is OFF (in dB.
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uPD5710TK
GaAs p-i-n diodes
advantages of resistor
DC bias of gaas FET
s21 diode
"voltage controlled resistor"
uPG2012
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD106WS FAST SWITCHING DIODES SOD-323 FEATURES MARKING: S21 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Symb Parameter ol Limits Unit Non-Repetitive Peak reverse voltage
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OD-323
SD106WS
OD-323
100uA
100mA
200mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD106WS FAST SWITCHING DIODES SOD-323 FEATURES MARKING: S21 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Symb Parameter ol Limits Unit Non-Repetitive Peak reverse voltage
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OD-323
SD106WS
OD-323
100uA
100mA
200mA
1SS355
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD106WS FAST SWITCHING DIODES SOD-323 + FEATURES - MARKING: S21 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Symb Parameter ol Limits Unit Non-Repetitive Peak reverse voltage
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OD-323
SD106WS
OD-323
100uA
100mA
200mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)
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OT-23
CJ2321
OT-23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2321 P-Channel 20-V D-S MOSFET SOT-23 APPLICATIONS z PA Switch z Load Switch 1. GATE 2. SOURCE 3. DRAIN MARKING: S21 Maximum ratings (Ta=25℃ unless otherwise noted)
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OT-23
CJ2321
OT-23
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HSDL-3208
Abstract: ULTRA VIOLET LED AN1114 FDC37C669 FDC37N769 HSDL3208 HSDL-3208-021 PC87109
Text: HSDL-3208-S21 Ultra Small Profile Package IrDA Data Compliant Low Power 115.2 kbit/s Infrared Transceiver Data Sheet Description Features The HSDL-3208 is an ultra-small low cost infrared transceiver module that provides the interface between logic and infrared IR signals for through air,
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HSDL-3208-S21
HSDL-3208
825-Class
5988-8481EN
5989-0351EN
ULTRA VIOLET LED
AN1114
FDC37C669
FDC37N769
HSDL3208
HSDL-3208-021
PC87109
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BAS21
Abstract: No abstract text available
Text: SEMICONDUCTOR DICE SWITCHING DIODES vF V BR> Dice type BA S21 Description High voltage single diode Ir Ip T rr Max. at V R Typical Geometry Min. Max. at Volts Volts mA (jA Volts 250 1.0 100 0.1 200 50* G 24 6 G 25 nS H D 3A Single diode 85 1.0 10 1.0 75 H D 2A
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OCR Scan
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BAS21
100J2
100S1,
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diode g29
Abstract: No abstract text available
Text: SEMICONDUCTOR DICE SWITCHING DIODES vF V BRI Dice type Description T rr Ir Min. Max. at Volts Volts mA «A Volts nS 250 1.0 100 0.1 200 50* G24 lF Max. at V R Typical Geometry BA S21 High voltage single diode H D 3A Single diode 85 1.0 10 1.0 75 6 G25 H D 2A
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OCR Scan
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100J2
100i2,
diode g29
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PDF
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.0549
Abstract: marking A02 a02 Transistor rf mje 1827 transistor 139 BF BGA427 GPS05605 Q62702-G0067 transistor NF j1 marking code marking code 8Ff
Text: SIEM ENS BG A427 S i-M M IC -A m p lifier in SIEGET 25-Technology Preliminary Data # # # # # # # Cascadable 50 £2-Gain Block Unconditionally stable Gain |s21|2=18.5 dB at 1.8 GHz appl.1 Gain |s21f= 2 2 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz
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OCR Scan
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BGA427
25-Technology
OT343
BGA427
Q62702-G0067
.0549
marking A02
a02 Transistor rf
mje 1827
transistor 139 BF
GPS05605
transistor NF j1 marking code
marking code 8Ff
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a03 dbm
Abstract: marking code 8Ff 661 a03 mmic a03 marking A03 BGA420 GPS05605 Q62702-G0057
Text: SIEM ENS BGA420 S i-M M IC -A m p lifier in SIEGET 25-Technology Preliminary Data # # # # # # Cascadable 50 £2-Gain Block Unconditionally stable Gain |s21|2=13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz V d=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz
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OCR Scan
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BGA420
25-Technology
OT343
BGA420
Q62702-G0057
a03 dbm
marking code 8Ff
661 a03
mmic a03
marking A03
GPS05605
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PDF
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Si-MMIC-Amplifier BGA427 in SIEGET 25-Technology Preliminary Data # # # # # # # Cascadable 50 n-G ain Block Unconditionally stable Gain |s21|2=18.5 dB at 1.8 GHz appl.1 Gain |s21f =22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (V d=3V, lD=9.4mA)
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OCR Scan
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BGA427
25-Technology
OT343
Q62702-G0067
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PDF
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wiring diagram for dual pump control
Abstract: A3971 A3971SLB
Text: Data Sheet 29319.32 3971 DUAL DMOS FULL-BRIDGE DRIVER NO CONNECTION 1 LOGIC GROUND 24 LOGIC SUPPLY 2 23 PWM2 S10 3 22 S20 OUT1A 4 21 OUT2A LOAD SUPPLY1 5 20 LOAD SUPPLY2 GROUND 6 19 GROUND GROUND 7 18 GROUND SENSE1 8 17 SENSE2 OUT1B 99 16 OUT2B S11 10 15 S21
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PP-069-2
wiring diagram for dual pump control
A3971
A3971SLB
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pin diagram for IC 7476
Abstract: marking 724 diode sot-363 datasheet and pin diagram of IC 7476 7476 marking 259 sot363 7476 data sheet 7476 datasheet FF200 ic 7294 R5 SOT363
Text: BGA 425 Si-MMIC-Amplifier in SIEGET 25-Technologie 4 5 Multifunctional casc. 50 block LNA / MIX 6 Unconditionally stable Gain |S21|2 = 18.5 dB at 1.8 GHz (Appl.1) gain |S 21| 2 = 22 dB at 1.8 GHz (Appl.2) 3 2 IP 3out = +7 dBm at 1.8 GHz (V D=3V,ID=9.5mA)
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25-Technologie
VPS05604
OT-363
Oct-12-1999
pin diagram for IC 7476
marking 724 diode sot-363
datasheet and pin diagram of IC 7476
7476
marking 259 sot363
7476 data sheet
7476 datasheet
FF200
ic 7294
R5 SOT363
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTK920T TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 2.9 + A With built-in bias diode 1 4 B F A C 3 2.8+0.2/-0.3 _ 0.2 1.9 + _ 0.05 0.16 +
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KTK920T
100MHz
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diode 1GHz
Abstract: KTK920BU FET MARKING
Text: SEMICONDUCTOR KTK920BU TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES Low loss at on state Typ 1dB@1GHz E M B M 4 2 3 D J 1 H L C A With built-in bias diode N K N DIM A B C D E H J K L M N MILLIMETERS _ 0.20 2.00 +
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KTK920BU
100MHz
diode 1GHz
KTK920BU
FET MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTK920T TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR/DVD/SET Top Box Tuner FEATURES E ・Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 A 2.9 + ・With built-in bias diode 1 4 B 3 D _ 0.1 0.4 + E F G H
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KTK920T
100MHz
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PDF
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KTK920BT
Abstract: No abstract text available
Text: SEMICONDUCTOR KTK920BT TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 A 2.9 + With built-in bias diode 1 4 B 3 D _ 0.1 0.4 + E F G H I J K 2.8+0.2/-0.3 _ 0.2
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KTK920BT
100MHz
KTK920BT
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PDF
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KTK920T
Abstract: fet diode
Text: SEMICONDUCTOR KTK920T TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 A 2.9 + With built-in bias diode 1 4 B 3 D _ 0.1 0.4 + E F G H I J K 2.8+0.2/-0.3 _ 0.2
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KTK920T
100MHz
KTK920T
fet diode
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PDF
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s21 diode
Abstract: FS21
Text: SEMICONDUCTOR KTK920BT TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 A 2.9 + With built-in bias diode 1 4 B F A C 3 2.8+0.2/-0.3 _ 0.2 1.9 + _ 0.05 0.16 +
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KTK920BT
100MHz
s21 diode
FS21
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diode 1GHz
Abstract: KTK920BU
Text: SEMICONDUCTOR KTK920BU TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES Low loss at on state Typ 1dB@1GHz E M B M 4 2 3 DIM A B C D E H J K L M N D J 1 H L C A With built-in bias diode N K N MILLIMETERS _ 0.20 2.00 +
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KTK920BU
100MHz
diode 1GHz
KTK920BU
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTK920BU TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES ・Low loss at on state Typ 1dB@1GHz E M B M 4 2 3 DIM A B C D E H J K L M N D J 1 H L C A ・With built-in bias diode N K N MILLIMETERS _ 0.20
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KTK920BU
100MHz
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PDF
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KTK920U
Abstract: No abstract text available
Text: SEMICONDUCTOR KTK920U TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR/DVD/Set Top Box Tuner FEATURES Low loss at on state Typ 1dB@1GHz E M M B 4 2 3 DIM A B C D E H J K L M N D J 1 H L C A With built-in bias diode N N K MILLIMETERS
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KTK920U
100MHz
KTK920U
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTK920BT TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR RF Switching for VCR Tuner FEATURES E Low loss at on state Typ 1dB@1GHz B DIM MILLIMETERS _ 0.2 A 2.9 + With built-in bias diode 1 4 B F A C 3 2.8+0.2/-0.3 _ 0.2 1.9 + _ 0.05 0.16 +
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KTK920BT
100MHz
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PDF
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