DIODE SMD 5050
Abstract: smd led 5050 SMD LED 5050 datasheet DO-219AB footprint SMD LED 5050 datasheet smd led smd 6 led 5050 datasheet led smd 5050 5050 SMD LED DIODE led SMD 5050 DO-219AB footprint SMD LED 5050 smd led smps ic smd 8 pin
Text: V I S H A Y I N T E R T E C H N O L O G Y, I N C . AUTOMOTIVE APPLICATIONS SOLUTIONS MARKET SEGMENT w w w. v i s h a y. c o m Automotive Applications Solutions from Vishay Intertechnology Introduction Body Electric & Comfort Electric Sensors Immobilizer & Security Systems
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VSA-PL0017-0406
DIODE SMD 5050
smd led 5050
SMD LED 5050 datasheet
DO-219AB footprint SMD LED 5050 datasheet smd led
smd 6 led 5050 datasheet
led smd 5050
5050 SMD LED
DIODE led SMD 5050
DO-219AB footprint SMD LED 5050 smd led
smps ic smd 8 pin
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Philips date CODE MARKING
Abstract: SMD MARKING CODE S1 DO214AC SMD MARKING CODE s1k diode SMD MARKING CODE s1j S1J taiwan smd diode s1B MCD802 MARKING CODE S1M SMA Philips MARKING CODE smd Product type marking code 039
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 S1 series SMA controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series FEATURES DESCRIPTION • Glass passivated
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M3D168
DO-214AC
OD124
Philips date CODE MARKING
SMD MARKING CODE S1 DO214AC
SMD MARKING CODE s1k
diode SMD MARKING CODE s1j
S1J taiwan
smd diode s1B
MCD802
MARKING CODE S1M SMA
Philips MARKING CODE
smd Product type marking code 039
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diode S1J
Abstract: S1J taiwan S1m diode s1j diode s1m tp diode s1m sma diode s1g sma MCD801 DIODE S1M DO-214AC VS1M
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 S1 series SMA controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA controlled avalanche rectifiers S1 series FEATURES DESCRIPTION • Glass passivated
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M3D168
DO-214AC
cathod40
603502/250/01/pp12
diode S1J
S1J taiwan
S1m diode
s1j diode
s1m tp
diode s1m sma
diode s1g sma
MCD801
DIODE S1M DO-214AC
VS1M
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vishay 1N4007 DO-213AB
Abstract: 1N4007 DO-214BA vishay 1N4007 DO-214AC 1N4007 VISHAY 2004 625-1N4007 1N4004 DO-214AC vishay rectifiers 1n4002 s1b MURS160-2 DO-204AC
Text: Diodes & Rectifiers BACK NEXT VISHAY Rectifiers A C B DO-213AA DO-213AB D DO-204AL DO-41 DO-214AC DO-214BA E DO-214AA Vishay Semiconductors VISHAY STANDARD SILICON H G F DO-214AB P600 DO-201AD Vishay Part No. 0.5 Amp - Surface Mount 625-GL34A GL34A/32 625-GL34B
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DO-213AA
DO-213AB
DO-204AL
DO-41)
DO-214AC
DO-214BA
DO-214AA
DO-214AB
DO-201AD
625-GL34A
vishay 1N4007 DO-213AB
1N4007 DO-214BA
vishay 1N4007 DO-214AC
1N4007 VISHAY 2004
625-1N4007
1N4004 DO-214AC
vishay rectifiers
1n4002 s1b
MURS160-2
DO-204AC
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Untitled
Abstract: No abstract text available
Text: 1/2 HIGH POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,000V AND 3A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 3A • SURGE OVERLOAD RATING EITHER 30A, 50A OR 100A • RELIABLE LOW COST CONSTRUCTION WITH UL 94V-0 PLASTIC MATERIAL
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marking cj4
Abstract: s6 smc schottky marking code s4 SMc S4 SMB MARKING CODE S1M SMA SJ SMB marking SS24 SMC MARKING SJ marking ED smb SS16 SMB
Text: 1/2 HIGH POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,000V AND 3A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 3A • SURGE OVERLOAD RATING EITHER 40A, 50A OR 100A • UL 94V-0 PLASTIC PACKAGE ACCEPTS HIGH TEMP. SOLDERING: 250˚C FOR 10s AT TERMINALS
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DIODE SOT-23 PACKAGE
Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package
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OT-23
LL4148
DL4148
500mW
LL4448
DL4448
OT-23
Part54G
DBS155G
DIODE SOT-23 PACKAGE
dbs107
mmbd2836
Bridge rectifier DF08
s1g 28 diode
BAS21
DL4148
LL4148
LL4448
MMBD1402
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BC548 TRANSISTOR REPLACEMENT
Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction
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BAP1321-02
BAP65-05
BAP65-03
BAP65-05W
BAP65-02
BAP63-03
BAP63-02
BAP64-03
BAP64-02
BB143
BC548 TRANSISTOR REPLACEMENT
TYN612 pin diagram
1n4007 smd, toshiba
S0817MH
TYN604 scr pin diagram
kmz51 compass
TRANSISTOR S1A 64 smd
toshiba l 300 laptop motherboard circuit diagram
JFET TRANSISTOR REPLACEMENT GUIDE j201
replacements for transistor NEC D 587
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Untitled
Abstract: No abstract text available
Text: RECTIFIER DIODES, Flat Surface Mount, Glass Passivated, Standard Recovery is t Part Number M ax mum Average Rectified Currant at T, A m p s ) T r C j PIV (V o lte S F tA l , „ {A m p s ) 50 100 GF1B GF1D G FiG 200 400 600 800 1000 GF1J GFtK GF1M StA Maximum
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DO-214BA
DO-214AC
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Untitled
Abstract: No abstract text available
Text: Bulletin 12084 rev. B 08/94 International lö R Rectifier SD400C.C STANDARD RECOVERY DIODES s e r ie s Hockey Puk Version Features • W ide current range ■ High voltage ratings up to 2400V ■ High surge current ca p abilities ■ D ittused junction ■
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SD400C.
-200AA
10-Therm
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fairchild 1P
Abstract: No abstract text available
Text: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.
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MMBD1201
OT-23
MMBD1204A
MMBD1203
MMBD1205A
fairchild 1P
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vsk140
Abstract: No abstract text available
Text: MICRO OUALITV / 1 Amp Schottky Rectifiers S E M IC O N D U C T O R , INC. 150°c Max Tj 20 Volt, 30 Volt and 40 Volt V RRM .550 Volt V F at lF = 1.0 Amp Very Fast Switching Speed Minimum Sized, Low Cost Epoxy Encapsulation LTR. A B C D E INCHES MILLIMETERS
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 12 KL4C vorläufige Daten prelim inary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage
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820hm
12KL4C
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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BUK7628-55
OT404
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MIL-STD-750
Abstract: MIL-STD-750 2072
Text: Microsemi m m m Santa Ana, CA m P fogress Powered b y Tûùhtiùiûÿy MX043J MX043G 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 Features Harris FSC260R die total dose : 100 kRAD(Si) w ithin pre-radiation param eter lim its
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MX043J
MX043G
FSC260R
1012RAD
MX043J)
MX043G)
1042B
MIL-STD-750
MIL-STD-750
MIL-STD-750 2072
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Untitled
Abstract: No abstract text available
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET F E A TU R ES PHT6N03LT SYMBOL QUICK RE FE R E N C E DATA V dss - 30 V • ’T r e n c h ’ technology • • • • • Very low on-state resistance
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PHT6N03LT
PHT6N03LT
OT223.
35\im
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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OCR Scan
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BUK7635-55
OT404
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Untitled
Abstract: No abstract text available
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DE SCRIPTION N -channel enhancem ent m ode standard level tie ld -e tte ct pow er tran sistor in a plastic envelope using
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K7528-55
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Untitled
Abstract: No abstract text available
Text: Philips Semi c on du ct or s Pr od uc t specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N-channel enhancement mode field-effed power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK436W-1000B
OT429
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SC0724D
Abstract: SO-10TM
Text: rz7 SGS-THOMSON A T # R HIGH SIDE SMART POWER SOLID STATE RELAY PRELIMINARY DATA . . . . . . TYP E V dss RDS on IOUT Vcc VN20ANSP 60 V 0.05 Î2 33 A 36 V OUTPUT CURRENT (CONTINUOUS): 33A @ Tc=25°C LOGIC LEVEL 5V COMPATIBLE INPUT THERMAL SHUT-DOWN UNDER VOLTAGE PROTECTION
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VN20ANSP
VN20ANSP
SC0724D
SO-10TM
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Untitled
Abstract: No abstract text available
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Logic level FET F E A TU R ES • • • • • • PHP44N06LT, PHB44N06LT SY M B O L ’Trench’ technology Very low on-state resistance Fast switching
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PHP44N06LT,
PHB44N06LT
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K-7535
Abstract: No abstract text available
Text: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DE SCRIPTION N-channel enhancement mode standard level tield-ettect power transistor in a plastic envelope using ’t r e n c h ’ technology. The device
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K7535-55
K-7535
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AL1510
Abstract: FL4010 ag204 IN5822 diode ag208 IN4007 bridge rectifier ic IN4007S IN5405 diode AG206 Diode IN5398
Text: 1. Q U IC K R E F E R E N C E TABLE FOR R EC TIFIE R DIO D E 1-1 1 AMPERE TO 6 AMPERES GENERAL PURPOSE AXIAL LEAD SILICON RECTIFIER VF V @IO (DC) PACKAGE PAGE 50 100 200 300 400 500 600 800 1000 FWD SURGE (A) 1.0 IN4001 IN4002 1N4003 - IN4004 - IN4005 IN4006
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IN4001
1N4007
IN4001S
IN4007S
IN5391
IN5399
PS200
PS2010
IN5400
IN5408
AL1510
FL4010
ag204
IN5822 diode
ag208
IN4007 bridge rectifier ic
IN5405 diode
AG206
Diode IN5398
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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