Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    S1A TRANSISTOR Search Results

    S1A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    S1A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    power 22E

    Abstract: SMBT3906 1N916 SMBT3904
    Text: SMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type Marking SMBT3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT3904 100mA SMBT3906 VPS05161 Jul-11-2001 EHP00763 EHP00764 EHP00757 power 22E SMBT3906 1N916 SMBT3904

    Untitled

    Abstract: No abstract text available
    Text: FJX3904 NPN Epitaxial Silicon Transistor Feature 3 • General-Purpose Transistor 2 1 SC-70 1. Base 2. Emitter 3. Collector Package Marking and Ordering Information Device Item Device Marking Package Packing Method Qty pcs FJX3904TF S1A SC-70 TAPE & REEL


    Original     		PDF FJX3904 SC-70 FJX3904TF

    S1A MARKING CODE

    Abstract: marking code S1A sot23 H12E
    Text: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package


    Original     		PDF SMBT3904/ MMBT3904 100mA SMBT3906 VPS05161 S1A MARKING CODE marking code S1A sot23 H12E

    transistor marking s1a

    Abstract: No abstract text available
    Text: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package


    Original     		PDF SMBT3904/ MMBT3904 100mA SMBT3906 VPS05161 transistor marking s1a

    1N916

    Abstract: MMBT3904 SMBT3904 SMBT3906 sot23 s1a marking sot23 transistor marking 12E
    Text: SMBT3904/ MMBT3904 NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 100mA  Low collector-emitter saturation voltage  Complementary type: SMBT3906 PNP 2 1 Type SMBT3904/ MMBT3904 Marking s1A 1=B Pin Configuration 2=E 3=C VPS05161 Package


    Original     		PDF SMBT3904/ MMBT3904 100mA SMBT3906 VPS05161 Feb-18-2002 1N916 MMBT3904 SMBT3904 SMBT3906 sot23 s1a marking sot23 transistor marking 12E

    3904

    Abstract: "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23
    Text: SMBT 3904 NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3906 PNP 2 1 Type Marking SMBT 3904 s1A Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


    Original     		PDF 100mA VPS05161 OT-23 Oct-14-1999 EHP00763 EHP00764 EHP00757 EHP00758 3904 "marking s1a" sot-23 transistor 3904 1N916 3906 PNP transistor 3906 3904 TRANSISTOR npn h12e 3904 SOT23

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, Latch-Up Proof, 4-/8-Channel Multiplexers ADG5208-EP/ADG5209-EP Enhanced Product FEATURES FUNCTIONAL BLOCK DIAGRAM S1A S1 DA S4A D S1B DB S4B S8 1-OF-4 DECODER 1-OF-8 DECODER A0 A1 A2 EN A0 A1 EN Figure 1. Each switch conducts equally well in both directions when on, and


    Original     		PDF ADG5208-EP/ADG5209-EP ADG5208-EP/ADG5209-EP MO-153-AB 16-Lead RU-16) ADG5208SRU-EP-RL7 ADG5209SRU-EP-RL7 RU-16

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SK703 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SK703

    TRANSISTOR S1A

    Abstract: ST703 12 v 100w amp
    Text: polyfet rf devices ST703 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF ST703 TRANSISTOR S1A ST703 12 v 100w amp

    TRANSISTOR S1A

    Abstract: SM706
    Text: polyfet rf devices SM706 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SM706 TRANSISTOR S1A SM706

    SH702

    Abstract: No abstract text available
    Text: polyfet rf devices SH702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SH702 SH702

    SC701

    Abstract: No abstract text available
    Text: polyfet rf devices SC701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SC701 SC701

    SP701

    Abstract: No abstract text available
    Text: polyfet rf devices SP701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SP701 SP701

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SQ701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SQ701

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SK701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SK701

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SE701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SE701

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SK701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SK701

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SM706 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SM706

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SR706 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SR706

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SC701 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SC701

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SM706 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE


    Original     		PDF SM706

    SP702

    Abstract: VDMOS
    Text: polyfet rf devices SP702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SP702 SP702 VDMOS

    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices SP702 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.


    Original     		PDF SP702

    3904

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon Switching Transistor • High DC current gain-: 0.1 mA to 100 mA • Low collector-emitter saturation voltage SMBT 3904 • Complementary type: SMBT 3906 PNP Type Marking SMBT 3904 s1A Ordering Code (tape and reel) »Q68000-A4416 P in t tonfigu ration


    OCR Scan     		PDF Q68000-A4416 OT-23 D1EE537 0235bGS fi535fc 01EBS3T 3904