Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    S15 DIODE Search Results

    S15 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    S15 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sd 431 transistor

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4058 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4058 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4058-S15-AY


    Original
    PDF 2SK4058 2SK4058 2SK4058-S15-AY O-251 O-252 2SK4058-ZK-E1-AY 2SK4058-ZK-E2-AY O-251) sd 431 transistor

    2SK4069

    Abstract: mp3zk
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4069 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4069 is N-channel MOS FET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4069-S15-AY


    Original
    PDF 2SK4069 2SK4069 2SK4069-S15-AY O-251 O-252 2SK4069-ZK-E1-AY 2SK4069-ZK-E2-AY O-251) mp3zk

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4057 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4057 is N-channel MOSFET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4057-S15-AY


    Original
    PDF 2SK4057 2SK4057 2SK4057-S15-AY 2SK4057-ZK-E1-AY 2SK4057-ZK-E2-AY O-251 O-252

    2SK4069

    Abstract: mp3zk
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4069 SWITCHING N-CHANNEL POWER MOSFET ORDERING INFORMATION DESCRIPTION The 2SK4069 is N-channel MOS FET device that features a PART NUMBER low on-state resistance and excellent switching characteristics, 2SK4069-S15-AY


    Original
    PDF 2SK4069 2SK4069 2SK4069-S15-AY O-251 O-252 2SK4069-ZK-E1-AY 2SK4069-ZK-E2-AY O-251) mp3zk

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3113B-S15-AY


    Original
    PDF 2SK3113B 2SK3113B 2SK3113B-S15-AY O-251 O-252 2SK3113B-ZK-E1-AY O-251)

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3113B SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3113B is N-channel MOS FET device that features a PART NUMBER low gate charge and excellent switching characteristics, and 2SK3113B-S15-AY


    Original
    PDF 2SK3113B 2SK3113B 2SK3113B-S15-AY O-251 O-252 2SK3113B-ZK-E1-AY O-251)

    B0813

    Abstract: PT9787 8C440 MJ3237 trw PT9787 MM4048 MJE42C MJ2841 MOTOROLA MM1758 mmt2857
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 NA31KY NA31MH NA31 MY SK3248 NA31KI NA31MI NA31KJ NA31MJ ~~~~g: 25 30 2NS204 S15-28 SMl5501 SMl550S SMl5511 SMl5901 SMl590S SMl5911 ~~~j~~ 35 40 80Y10 80Y10 PT9787 PT9787A 2N4431 2S022S 2S0226 SOT4301


    Original
    PDF 2SC109S 2NS714 92PU01 2S0180S MPSU01 NSOU01 92GU01 NA31KY B0813 PT9787 8C440 MJ3237 trw PT9787 MM4048 MJE42C MJ2841 MOTOROLA MM1758 mmt2857

    marking ss14

    Abstract: ss14 do-214ac SS14 marking SS15 sma ss14 sma SS15 SS16 ss12 marking ss14 do-214ac sma SS13
    Text: LESHAN RADIO COMPANY, LTD. SS12 – SS16 1A 1A SCHOTTKY SMA DIODES TYPE Marking SS12 SS13 SS14 SS15 SS16 20 30 40 50 60 S12 S13 S14 S15 S16 V F V IF (A) VRRM(V) 0.50 0.50 0.50 0.70 0.70 1.0 IRMI(µA) IP8M(A) 1000 Package Dimensions Trr(ns) – – – –


    Original
    PDF 214AC -SS15 50mVp-p marking ss14 ss14 do-214ac SS14 marking SS15 sma ss14 sma SS15 SS16 ss12 marking ss14 do-214ac sma SS13

    VID125-12P1

    Abstract: No abstract text available
    Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 100/12* Short Circuit SOA Capability Square RBSOA 90 A 1200 V 2.8 V Preliminary Data Sheet S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot ECO-TOPTM 1 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1


    Original
    PDF 121T120 125-12P1 VID125-12P1

    ECO-TOP

    Abstract: DWLP55-12
    Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 75/12* Preliminary Data Sheet S15 R15 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 V3 ECO-TOPTM 1 V6 typical picture, for pin configuration see outline drawing IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK


    Original
    PDF 81T120 75-12P1 ECO-TOP DWLP55-12

    transistor opm

    Abstract: inductive sensor SYMBOL
    Text: IGBT Module PSII 100/06* IC80 = VCES = VCE sat typ.= Short Circuit SOA Capability Square RBSOA 80 A 600 V 2.3 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol A15 A7 A9 G15 V12 V13 N15 V9 V10 D1


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 30/06* Short Circuit SOA Capability Square RBSOA 29 A 600 V 2.4 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 typical picture, for pin configuration see outline


    Original
    PDF 25T60 50-06P1

    POWERSEM

    Abstract: No abstract text available
    Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 50/06* Preliminary Data Sheet 48 A 600 V 2.3 V S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff A15 A7 A9 G15 V12 V13 N15 V9 V10


    Original
    PDF 42T60 75-06P1 POWERSEM

    Untitled

    Abstract: No abstract text available
    Text: ECO-TOPTM 1 IGBT Module IC80 = VCES = VCE sat typ. = PSII 30/12* Short Circuit SOA Capability Square RBSOA 33 A 1200 V 3.1 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 Symbol Conditions VCES TVJ = 25°C to 150°C


    Original
    PDF 42T120 50-12P1

    IQ64120QGx04

    Abstract: No abstract text available
    Text: Technical Specification IQ64xxxQGXxx 1.8-48V 50W 3000Vdc Quarter-brick Continuous Input Outputs Max Power REINFORCED Insulation DC-DC Converter a pu d bl va ic n at ce io d n 18-135V O UT 18 64 -1 0 35 33 V QG IN 3. C1 3V 5 N R @ S15 G A The InQor quarter-brick converter series is composed


    Original
    PDF IQ64xxxQGXxx 3000Vdc 8-135V Featu050 IQ64120QGx04

    brake rectifier motor

    Abstract: No abstract text available
    Text: Converter - Brake - Inverter Module PSIPM 60/12 Preliminary Data Sheet C1 V15 U15 H15 A15 A10 A5 L15 J15 D15 Q15 O15 L1 F15 F1 V4 N15 S15 V11 V13 P1 R1 N1 U1 V1 H1 V7 t e e h s r e a t d a un d l e l t i v t i n t s e a t t m c n te odu elop r p dev Three Phase


    Original
    PDF

    C80C49

    Abstract: 80C49 W2005
    Text: Converter - Brake - Inverter Module PSIPM 35/12 Preliminary Data Sheet C1 V15 U15 H15 A15 A10 A5 N15 L15 J15 D15 Q15 O15 L1 F15 F1 H1 S15 V11 V13 P1 R1 N1 U1 V1 t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n p te odu elo pr dev V4 V7 Three Phase


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Converter - Brake - Inverter Module PSIPM 30/06 Preliminary Data Sheet C1 V15 U15 H15 A15 A10 A5 L15 J15 D15 V4 Q15 O15 L1 F15 F1 N15 S15 V11 V13 P1 R1 N1 U1 V1 H1 V7 t e e h r s e a t d a un d l e l t i v t i n t s e a t t m c n te odu elop r p dev Three Phase


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: IGBT Module IC80 = VCES = VCE sat typ. = PSII 75/06* Preliminary Data Sheet S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 V3 ECO-TOPTM 1 V6 t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev Symbol


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Converter - Brake - Inverter Module PSIPM 100/06 Preliminary Data Sheet C1 V15 U15 H15 A15 A10 L15 J15 D15 A5 N15 Q15 O15 L1 F15 F1 H1 S15 V11 V13 P1 R1 N1 U1 V1 t e e h s r e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev V4 V7 Three Phase


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Converter - Brake - Inverter Module PSIPM 50/06 Preliminary Data Sheet C1 V15 U15 H15 A15 A10 L15 J15 D15 A5 V4 Q15 O15 L1 F15 F1 N15 H1 S15 V11 V13 P1 R1 N1 U1 V1 V7 t e e h r s e a t d a n d u l e l t i v t i n t s e a t t m c n te odu elop r p dev Three Phase


    Original
    PDF

    I2063

    Abstract: 150a gto ka s15 DO-205AC
    Text: Bulletin I2063 rev. A 09/94 SD153N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series 150A 1.0 to 1.5 µs recovery time High voltage ratings up to 1600V High current capability Optimized turn on and turn off characteristics


    Original
    PDF I2063 SD153N/R DO-30 SD153N/R SD153N/R. 150a gto ka s15 DO-205AC

    Untitled

    Abstract: No abstract text available
    Text: HD-LI N X G S15 0 8 HDTV Cable Driver GENNUM A T I N PRELIMINARY DATA SHEET FEATURES DESCRIPTION • SMPTE 292M Compliant The GS1508 is a first generation very high speed bipolar integrated circuit designed to drive two 75 Q co-axial cables. The GS1508 is a SMPTE 292M com pliant cable


    OCR Scan
    PDF GS1508

    DIODE marking Sl

    Abstract: s6 68a diode diode marking b2 b1391 diode MARKING A9 IC MARKING 27A 6 PIN MARKING 62Z diode MARKING b3 S6 68A 621 marking diode
    Text: SURFACE P A K {"J x i — • M Type No. HRW0202A HRW0202B HRW0203A HRW0302A HRW05Û2A HRW0503A HRW0702A HRW0703A HSM83 HSM88AS HSM88ASR HSM88WA HSM88WK HSM1Q7S HSM109WK Markig SI 7 S18 S5 S11 S10 S6 S15 @4 04 S8 F7 C1 04 @4 02 C3 C7 01 06 C4 C5 05 02 05 S7


    OCR Scan
    PDF HRW0202A HRW0202B HRW0203A HRW0302A HRW05 HRW0503A HRW0702A HRW0703A HSM83 HSM88AS DIODE marking Sl s6 68a diode diode marking b2 b1391 diode MARKING A9 IC MARKING 27A 6 PIN MARKING 62Z diode MARKING b3 S6 68A 621 marking diode