scr 12a
Abstract: transistor marking N1 g i angle S12XXXH
Text: S12xxxH SCR FEATURES IT RMS = 12A VDRM = 200V to 800V High surge current capability K A G DESCRIPTION The S12xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose applications. TO220 non-insulated
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S12xxxH
S12xxxH
scr 12a
transistor marking N1
g i angle
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xgold 118
Abstract: No abstract text available
Text: Intel Atom Processor S1200 Product Family for Microserver Datasheet, Volume 1 of 2 December 2012 Document Number: 328194-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS
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S1200
S1200
xgold 118
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bdm programmer
Abstract: 5H55W MC68HC912KD128 MC68HC912DA 912D60 MC9S12Dx256 MC68HC912DA128 M68HC12 MC68HC912B32 MC9S12DP256
Text: Reference Guide For Serial BDM Programmer A Production Flash Programmer For The M68HC12 and Star12 Microcontroller Families Written By Gordon Doughman Software Specialist 1.0 Introduction The BDMPgmr12 production programming tool was developed to provide a fast, efficient, low
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M68HC12
Star12
BDMPgmr12
bdm programmer
5H55W
MC68HC912KD128
MC68HC912DA
912D60
MC9S12Dx256
MC68HC912DA128
MC68HC912B32
MC9S12DP256
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diode Marking code v3
Abstract: No abstract text available
Text: S1102 Unipolar Hall Switch-Low Sensitivity Features and Benefits Application Examples – – – – – – – – – – – – – – – – 3.5V to 24V Operation -40℃ to 150℃ Superior temperature operation CMOS technology Low current consumption
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S1102
Size-SOT23
S1102E
OT-23:
S12XX
OT-23)
diode Marking code v3
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sgm2122
Abstract: No abstract text available
Text: SGM2122 Dual, Low Dropout, 250mA LDO Regulators GENERAL DESCRIPTION FEATURES The SGM2122 is a dual, low-power, low-dropout, CMOS y Highly Accurate: ±2% linear voltage regulator. It operates from a 2.5V to 5.5V y Ultra-Low Dropout Voltage: input and delivers up to 250mA at each channel.
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SGM2122
250mA
SGM2122
250mV
250m00
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diode Marking code v3
Abstract: No abstract text available
Text: S1104 Unipolar Hall Switch-Low Sensitivity Features and Benefits Application Examples – – – – – – – – – – – – – – – – 3.5V to 24V Operation -40℃ to 150℃ Superior temperature operation CMOS technology Low current consumption
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S1104
Size-SOT23
S12XX
OT-23)
diode Marking code v3
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Untitled
Abstract: No abstract text available
Text: r r z ^ 7# S G S -T H O M S O N RfflDOœiHitSiriHÎOiDOS S 12x x x H SCR FEATURES • It r m s = 12A V d r m = 200V t o 800V ■ High surge current capability ■ DESCRIPTION The S12xxxH series of SCRs uses a high performance MESA GLASS PNPN technology.
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S12xxxH
T0220
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JIS B 0209 general
Abstract: PW01 SCR PNPN CH85 S12XXX S12XXXH
Text: r z 7 SGS-THOMSON ^ 7 # K LICTH0HC1 S12XXXH SCR FEATURES =12A > V drm=200V to 800V • High surge current capability ■ It rm s DESCRIPTION The S12xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose
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S12xxxH
T0220
7c12ti237
D070144
JIS B 0209 general
PW01
SCR PNPN
CH85
S12XXX
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN5964 C M O S 1C LC75750E, 75750W 1/3 Duty VFD Driver 00 Overview Package Dimensions The LC75750E and LC 75750W that can be used for electronic and other ap p lication s under controller. These products can up to 264 segments. are I/3 duty VFD drivers
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EN5964
LC75750E,
5750W
LC75750E
3151-QFP100E
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34pin SRAM Memory Card
Abstract: DALLAS SEMICONDUCTOR Ds1230 sram book
Text: O ver the past 11 years, Dallas Semiconductor has developed an extensivefamily ofNonvolatile SRAM modules. Because the lithium batteries inside these modules cannot survive the high temperatures o f surface-mount soldering, Nonvolatile SRAMs have al ways been packaged as DIP-style products.
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26-pin
34-pin
68-pin
34pin SRAM Memory Card
DALLAS SEMICONDUCTOR Ds1230
sram book
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Untitled
Abstract: No abstract text available
Text: NMS SERES 6kVD C IsD^àted 2W D u a lO irtp u t □ B S EN 6 0 9 5 0 C e rtifie d n 6kVDC Iso la tio n □ DualO utput □ Low P ro file P a c k a g e □ E fficie n c y to 8 0% □ Pow e r D e n s ity 0 .65W /cm 3 □ 5V & 1 2 V In p u t n 5 V , 9 V , 1 2 V a n d 1 5 V 0 u tp u t
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NMS0509
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