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    S11 SCHOTTKY DIODE Search Results

    S11 SCHOTTKY DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    S11 SCHOTTKY DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S11 SCHOTTKY diode

    Abstract: ASML-5829 pin diode limiter marking s11 SC70-6 MARKING 54 "Pin Diode" s21 diode ASML5829
    Text: ASML-5829 Schottky Assisted Low Power PIN Diode Limiter Data Sheet Description Features The ASML-5829 is specifically designed for low power limiter applications, where it can be used to protect the receiver system from being damaged by large input signals, and allow the receiver system to function normally


    Original     		PDF ASML-5829 ASML-5829 900MHz) OT-323 SC70-3 OT-363 SC70-6 AV02-1692EN S11 SCHOTTKY diode pin diode limiter marking s11 MARKING 54 "Pin Diode" s21 diode ASML5829

    ASML-5822

    Abstract: S11 SCHOTTKY diode marking code f6 DIODE ASML-5822-TR1 PIN DIODE MARKING CODE AB diode IN 5822 AV02-1691EN SC70-6 avago marking -20 F6 SCHOTTKY DIODE
    Text: ASML-5822 Schottky Assisted Low Power PIN Diode Limiter Data Sheet Description Features The ASML-5822 is specifically designed for low power limiter applications, where it can be used to protect the receiver system from being damaged by large input signals, and allow the receiver system to function normally


    Original     		PDF ASML-5822 ASML-5822 900MHz) OT-323 SC70-3 OT-363 SC70-6 AV02-1691EN S11 SCHOTTKY diode marking code f6 DIODE ASML-5822-TR1 PIN DIODE MARKING CODE AB diode IN 5822 avago marking -20 F6 SCHOTTKY DIODE

    MA4E1245KE

    Abstract: MA4E1245KA MA4E1245KB 350AT S11 SCHOTTKY diode 20/Molectron Detector J100 MA4E1245 transistor schottky model spice microwave diode
    Text: Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features ● ● ● ● ● ● ● Designed for High Volume Low Cost Detector and Mixer Applications Low Noise Figure: 5.7 dB SSB at X-Band High Detector Sensitivity: -55 dBm TSS


    Original     		PDF MA4E1245 OT-23 -j100 MA4E1245KE MA4E1245KA MA4E1245KB 350AT S11 SCHOTTKY diode 20/Molectron Detector J100 transistor schottky model spice microwave diode

    narda 3033

    Abstract: 8350B-83595A 2640D S11 SCHOTTKY diode HSMS-2822 narda coupler 8350B HSMS2822A diode s11
    Text: A 2 GHz Balanced Mixer Using SOT-23 Surface Mount Schottky Diodes Application Note 997 Introduction A series of general purpose RF Schottky diodes has been introduced in the SOT-23 package. One of these diodes, the HSMS-2822, is a matched series pair, an ideal


    Original     		PDF OT-23 OT-23 HSMS-2822, HSMS-2822. HSMS-2822 narda 3033 8350B-83595A 2640D S11 SCHOTTKY diode narda coupler 8350B HSMS2822A diode s11

    ADS 10 diode

    Abstract: S11 SCHOTTKY diode LSSP diode ADS model rf detector diode low power pn junction diode H286 b286DIE pn junction diode ideality factor HSMS-2865
    Text: Diode Detector Simulation using Agilent Technologies EEsof ADS Software Application Note 1156 Introduction This application note has been written to demonstrate how the Agilent Technologies EEsof ADS software package can be used to simulate a diode detector circuit reliably against temperature.


    Original     		PDF HSMS-2865, 5968-1885E ADS 10 diode S11 SCHOTTKY diode LSSP diode ADS model rf detector diode low power pn junction diode H286 b286DIE pn junction diode ideality factor HSMS-2865

    S11 SCHOTTKY diode

    Abstract: Avago Technologies Schottky diode ADS model rf detector diode low power LSSP ADS 10 diode HSMS2865 k 2865 EEsof Circuit Components for Manual for ADS B-286
    Text: Diode Detector Simulation using Avago Technologies EEsof ADS Software Application Note 1156 Introduction This application note has been written to demonstrate how the Avago Technologies EEsof ADS software package can be used to simulate a diode detector circuit reliably against


    Original     		PDF HSMS-2865, 5968-1885E S11 SCHOTTKY diode Avago Technologies Schottky diode ADS model rf detector diode low power LSSP ADS 10 diode HSMS2865 k 2865 EEsof Circuit Components for Manual for ADS B-286

    S11 SCHOTTKY diode

    Abstract: narda 3033 10 GHz mixer diode 8350B-83595A HSMS-2822 HSMS 2822 8557A IN 508 DIODE
    Text: A 2 GHz Balanced Mixer Using SOT-23 Surface Mount Schottky Diodes Application Note 997 Introduction A series of general purpose RF Schottky diodes has been introduced in the SOT-23 package. One of these diodes, the HSMS-2822, is a matched series pair, an ideal


    Original     		PDF OT-23 OT-23 HSMS-2822, HSMS-2822. HSMS-2822 5988-0598EN S11 SCHOTTKY diode narda 3033 10 GHz mixer diode 8350B-83595A HSMS 2822 8557A IN 508 DIODE

    ADS 10 diode

    Abstract: diode ADS model S11 SCHOTTKY diode LSSP pn junction diode HSMS-2665 EESof b286DIE h286 die 5968-1885E
    Text: Diode Detector Simulation using Hewlett-Packard EESOF ADS Software Application Note 1156 Introduction This application note has been written to demonstrate how the Hewlett-Packard EESOF ADS software package can be used to simulate a diode detector circuit reliably against temperature.


    Original     		PDF HSMS-2865, 5968-1885E ADS 10 diode diode ADS model S11 SCHOTTKY diode LSSP pn junction diode HSMS-2665 EESof b286DIE h286 die 5968-1885E

    PIN diode ADS model

    Abstract: HSMS-2820 LSSP S11 SCHOTTKY diode 1UW SOT 23 diode ADS model 84192 HSMS2820 HSMS-2825 HSMS-282K
    Text: Design of an Input Matching Network for a DC biased 850 MHz Small Signal Detector Application Note 1187 Introduction This application note describes the use of the HSMS-2820 in small signal detector applications at 850 MHz. The single series diode HSMS-2820 has a detection sensitivity[1] of about 30 mV /µW; i.e., it can produce an output of


    Original     		PDF HSMS-2820 HSMS-2820) OT-23 6042-16b LL2012-F22NK LL2012F3N3K HSMS-2820 5968-7756E PIN diode ADS model LSSP S11 SCHOTTKY diode 1UW SOT 23 diode ADS model 84192 HSMS2820 HSMS-2825 HSMS-282K

    Untitled

    Abstract: No abstract text available
    Text: SBX201C Ordering number : ENA0628A SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ . Less parastic components. Small forward voltage.


    Original     		PDF ENA0628A SBX201C A0628-3/3

    S11 CASE MARKING diode

    Abstract: 0-834-10 SBX201C 2V320
    Text: SBX201C Ordering number : ENA0628A SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ . Less parastic components. Small forward voltage.


    Original     		PDF SBX201C ENA0628A A0628-3/3 S11 CASE MARKING diode 0-834-10 SBX201C 2V320

    Untitled

    Abstract: No abstract text available
    Text: SBX201C Ordering number : ENA0628A SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ . Less parastic components. Small forward voltage.


    Original     		PDF SBX201C ENA0628A A0628-3/3

    Untitled

    Abstract: No abstract text available
    Text: SBX201C Ordering number : ENA0628 SANYO Semiconductors DATA SHEET SBX201C Schottky Barrier Diode S to X-Band Detector, Mixer Applications Features • • • • Small interterminal capacitance C=0.25pF typ . Less parastic components. Small forward voltage.


    Original     		PDF ENA0628 SBX201C A0628-3/3

    LT5503

    Abstract: No abstract text available
    Text: LTC5509 300MHz to 3GHz RF Power Detector in SC70 Package FEATURES • ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 3GHz Wide Input Power Range: –30dBm to 6dBm Buffered Detector Output


    Original     		PDF LTC5509 300MHz 30dBm LT5506 500MHz 40MHz LTC5507 100kHz LT5503

    LT5503

    Abstract: No abstract text available
    Text: LTC5508 300MHz to 7GHz RF Power Detector with Buffered Output in SC70 Package U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 7GHz Wide Input Power Range: –32dBm to 12dBm


    Original     		PDF LTC5508 300MHz 32dBm 12dBm 40MHz 500MHz 17dBm 20dBm LT5503

    HRW0302A

    Abstract: Hitachi DSA00771 SC-59A mark S11
    Text: ADE-208-015E Z HRW0302A Silicon Schottky Barrier Diode for Rectifying Rev. 5 Nov. 1994 Features Pin Arrangement • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF ADE-208-015E HRW0302A 10msec 300mA SC-59A HRW0302A Hitachi DSA00771 SC-59A mark S11

    mark S11

    Abstract: Hitachi DSA002712
    Text: HRW0302A Silicon Schottky Barrier Diode for Rectifying ADE-208-015E Z Rev. 5 Nov. 1994 Features • Low forward voltage drop and suitable for high effifiency rectifying. • MPAK package is suitable for high density surface mounting and high speed assembly.


    Original     		PDF HRW0302A ADE-208-015E HRW0302A 10msec 300mA SC-59A mark S11 Hitachi DSA002712

    hsch 3486 zero bias schottky diode

    Abstract: HSMS-2850 HSCH-3486 HSMS-8101 5963-0951E hsms-10-5
    Text: FORWARD CURRENT HSCH-3486 The Zero Bias Schottky Detector Diode 1 Application Note 969 0.1 0.01 Introduction 0.1 A conventional Schottky diode detector such as the Avago Technologies HSMS-8101 requires no bias for high level input power — above one milliwatt. However,


    Original     		PDF HSCH-3486 HSMS-8101 5952-9823E 5963-0951E hsch 3486 zero bias schottky diode HSMS-2850 HSCH-3486 hsms-10-5

    diode schottky A28

    Abstract: diode A28 LT5503
    Text: LTC5508 300MHz to 7GHz RF Power Detector with Buffered Output in SC70 Package DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 7GHz Wide Input Power Range: –32dBm to 12dBm


    Original     		PDF LTC5508 300MHz 32dBm 12dBm LT5506 500MHz 40MHz diode schottky A28 diode A28 LT5503

    DIODE RF DETECTOR

    Abstract: rf power detector audio envelope detector diode 5508f LTC5508 927 DIODE rf detector diode SOT 86 MARKING E4 LT5503 Metal Detector
    Text: LTC5508 300MHz to 7GHz RF Power Detector with Buffered Output in SC70 Package U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 7GHz Wide Input Power Range: –32dBm to 12dBm


    Original     		PDF LTC5508 300MHz 32dBm 12dBm LTC5508 12dBm. LT5506 500MHz DIODE RF DETECTOR rf power detector audio envelope detector diode 5508f 927 DIODE rf detector diode SOT 86 MARKING E4 LT5503 Metal Detector

    MA4E1245

    Abstract: S11 SCHOTTKY diode
    Text: M MôM m an A M P com pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features • D esigned for High Volume Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB SSB at X-Band • High Detector Sensitivity: -55 dBm TSS


    OCR Scan     		PDF MA4E1245 OT-23 S11 SCHOTTKY diode

    ma4e12

    Abstract: No abstract text available
    Text: an A M P com pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features • Designed for High Volume Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB SSB at X-Band • High Detector Sensitivity: -55 dBm TSS


    OCR Scan     		PDF MA4E1245 OT-23 ma4e12

    MA4K1245

    Abstract: transistor schottky model spice
    Text: m a n A M P com pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V 2.00 SOT-23 Features • D esigned for High Volum e Low Cost D etector and M ixer A pplications • Low N oise Figure: 5.7 dB SSB at X-Band • High D etector Sensitivity: -55 dBm TSS


    OCR Scan     		PDF OT-23 MA4E1245 MA4K1245 transistor schottky model spice

    S11 SCHOTTKY diode

    Abstract: hsms-2822 HSMS2822
    Text: m HEW LETT PACKARD APPLICATION NOTE 997 A 2 GHz Balanced Mixer Using SOT-23 Surface Mount Schottky Diodes TABLE OF CONTENTS INTRODUCTION . 1 NOVEL IMPEDANCE MATCHING TEC H N IQ U E 1 MATCHING CIRCUIT D ES IG N .


    OCR Scan     		PDF OT-23 HSMS-2822, HSMS-2822. S11 SCHOTTKY diode hsms-2822 HSMS2822