PS-S100
Abstract: No abstract text available
Text: PS-S100 Series • Universal AC input / full range • Protections: Short Circuit / Overload / Overvoltage / Over temperature • ZCS/ZVS technology to reduce power dissipation • Cooling by free air convection • DIN rail mountable • DC OK relay contact
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PS-S100
PS-S10012
PS-S10024
PS-S10048
120mVp-p
150mVp-p
200mVp-p
20MHz
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Untitled
Abstract: No abstract text available
Text: PS-S100 Series Specifications SAVER ENERGY ENERGY SAVER OUTPUT OUTPUT Features: • Universal AC input / full range • Protections: Short Circuit / Overload / Overvoltage / Over temperature • ZCS/ZVS technology to reduce power dissipation • Cooling by free air convection
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PS-S100
PS-S10012
PS-S10024
PS-S10048
120mVp-p
150mVp-p
200mVp-p
20MHz
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S100 NPN Transistor
Abstract: S100-28 S100 transistor
Text: S100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 100-28 is designed for HF linear applications up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 16 dB min. at 100 W/30 MHz • High linear power output • IMD = -32 dBc max. at 100 W PEP
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S100-28
112x45°
S100 NPN Transistor
S100-28
S100 transistor
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S100 NPN Transistor
Abstract: S100 transistor SHD431101S
Text: SHD431101 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 645, REV. B NPN SWITCHING TRANSISTOR SHD431101S - S-100 JANTX Screening SHD431101ST - S-100 (JANTX) Screening, Solder dipped • Hermetic, Ceramic Package • Electrically Equivalent to MMBT2369A
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SHD431101
SHD431101S
S-100
SHD431101ST
MMBT2369A
S100 NPN Transistor
S100 transistor
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DIN 1707
Abstract: pin configuration transistor BC547 smd packaging darkness controlled light switch system din en 29454-1 ICL 7107 Application Notes 868 MHZ wireless audio transmitter schematic BAS 216 SMD 70.2 marking smd npn Transistor solar cells circuit diagram ICL 7107
Text: RF Sensor Transmitter Module STM 100 User Manual V1.5 September 2005 Revision History The following major modifications and improvements have been made: Version Major Changes V1.1 V1.2 V1.3 • • • • • • • • • • • • V1.4 V1.5 • •
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EPM100
868MHz
DIN 1707
pin configuration transistor BC547 smd packaging
darkness controlled light switch system
din en 29454-1
ICL 7107 Application Notes
868 MHZ wireless audio transmitter schematic
BAS 216 SMD
70.2 marking smd npn Transistor
solar cells circuit diagram
ICL 7107
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD426306 TECHNICAL DATA DATA SHEET 849 REV. A BIPOLAR POWER TRANSISTOR ADD SUFFIX “S” TO PART NUMBER FOR S-100 LEVEL SCREENING DESCRIPTION: A SINGLE NPN POWER TRANSISTOR IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS RATING (ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED).
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SHD426306
S-100
O-257
O-257
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5004 bridge rectifier
Abstract: No abstract text available
Text: DATA SHEET 2044 REV. C SENSITRON SEMICONDUCTOR S-100 SCREENING PROCEDURE All parts procured with S-100 Screening shall be 100% screened in accordance with one of the three following procedures, as applicable. All testing is performed at room temperature. For testing at high and low temperatures,
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S-100
MIL-PRF-19500,
MIL-STD-750
3131not
5004 bridge rectifier
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Untitled
Abstract: No abstract text available
Text: DEMO MANUAL DC1880A LTC2874 Quad IO-Link Master Hot Swap Controller and PHY Description Demonstration circuit 1880A showcases the LTC 2874, a quad Hot Swap controller and PHY suitable for IO-Link® master and other applications. DC1880A operates from an external supply VDD and utilizes the DC590 USB serial
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DC1880A
LTC2874
DC1880A
DC590
LTC2874
com/demo/DC1880A
dc1880af
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Untitled
Abstract: No abstract text available
Text: SHD419205 PNP SHD419305 NPN SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 647, REV. A Complementary Bi-Polar Power Transistors NPN / PNP Designed for use as high-frequency drivers in audio amplifiers. SHD419205S PNP / SHD419305S (NPN) - S-100 (JANTX) Screening
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SHD419205
SHD419305
SHD419205S
SHD419305S
S-100
150Vdc
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shd4321
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD432001 TECHNICAL DATA DATA SHEET 381, REV – Formerly part number – SHD4321 SMALL SIGNAL TRANSISTOR Add Suffix “S” for S-100 Screening DESCRIPTION: DUAL PNP SMALL SIGNAL TRANSISTOR IN A SURFACE MOUNT CERAMIC LCC-6 PACKAGE.
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SHD4321
SHD432001
S-100
shd4321
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shd4322
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR SHD432102D TECHNICAL DATA DATA SHEET 952, REV. A Formerly Part Number SHD4322 DUAL SMALL SIGNAL HIGH SPEED SWITCHING TRANSISTOR Add Suffix “S” for S-100 Screening DESCRIPTION: DUAL PNP SMALL SIGNAL TRANSISTOR IN A SURFACE MOUNT CERAMIC LCC-6 PACKAGE.
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SHD4322
SHD432102D
S-100
shd4322
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92CS-B2646
Abstract: b2646
Text: I CD40110B Types v Tex a s In s t r u m e n t s Data sheet acquired from Harris S em iconductor SC H S100 CMOS Decade Up-Down Counter/Latch/Display Driver High-Voltage Type 20-V Rating a i 2 3 H5 5 1 B3 i £ 3 4 5 6 7 B 8 9 2 C S -3 I3 8 0 F e a tu re s :
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CD40110B
92CS-B2646
b2646
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power transistor mrc 438
Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
Text: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase
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23SbQS
0Q043bfl
BD434
BD440
BD442
434/BD
436/BD
BD434.
BD438.
fl23SbO
power transistor mrc 438
mrc 436
mrc 438
transistor mrc 439
mrc 442
mrc 437
transistor bd 370
siemens d213
transistor BD 370 b
mrc 439
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TRANSISTOR D 471
Abstract: transistor BR 471 A S100 NPN Transistor transistor 547 b 471 npn
Text: 2SC D • ßSBSbOS OQQMMR'l 7 « S I E NPN Silicon Planar Transistors G , ~ T ~ 3 l BF 469 BF 471 SIEMENS AKT IE NG ES E L LS C H A F BF 4 6 9 and BF 471 are epitaxial NPN silicon Planartransistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is conductively connected to the metallic
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62702-F497
62702-F507
Q62902-B63
Q62902-B62
BF471
535b05
GQQ45Q1
BF469
TRANSISTOR D 471
transistor BR 471 A
S100 NPN Transistor
transistor 547 b
471 npn
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S100 NPN Transistor
Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503
Text: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF
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fl23SbOS
00Q4507
Q62702-F574
S100 NPN Transistor
BF603
S100 transistor
BF503
Q62702-F574
S100
S400
transistor 503
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S100 NPN Transistor
Abstract: No abstract text available
Text: u r 2SC D • fl23 Sb05 GGQ4507 S NPN Silicon RF Transistor isiEG : -~r-S i- M BF 503 -SIEMENS AKTIENGESELLSCHAF - ;— BF 5 0 3 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 DIN 4 1 8 6 8 .
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GGQ4507
E--08
S100 NPN Transistor
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transistor bD 288
Abstract: TRANSISTOR 287 A transistor D 288 transistor bd 126 R339
Text: 2SC D • ô23Sb05 0Q0M3M2 7 M S I E 6 PIMP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04342 T -3 3 -/? BD 287 BD 288 ° - BD 287 and BD 288 are epitaxial planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to the metallic mounting area.
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23Sb05
125min.
62702-D
Q62702-D901
62902-B63
62902-B62
023SbQ5
23SbQS
transistor bD 288
TRANSISTOR 287 A
transistor D 288
transistor bd 126
R339
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TA8101N
Abstract: 8428K TA8101 76494P 7291P 62803P tc9201f 7288P 7262-F 8407P
Text: 3. APPLICATIONS 3-1 Applications List E lectronic equipm ents contains th eir ow n m ain and auxiliary drives; th eir m o to r types and drive circuits are selected in accordance w ith th e necessary properties for such parts. The following are application circuits considered m ost com m on, listed fo r devices.
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TA8401/AP,
TA7272P
TA8407P
8407F
TA8102P
8212F
8212F
TA8410P/AP
TA8410P
TA8101N
8428K
TA8101
76494P
7291P
62803P
tc9201f
7288P
7262-F
8407P
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2N5552
Abstract: PT-3526 IC 3526 powertech
Text: GD0D3E1 7 1?E D "BIG IDEAS IN BIG POWER” • PowerTecn POIdERTECH INC 40 AMPERES PT-3526 T - l ^ - l S HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V cE sat . 0.5V @20A h p E . 5 min. @40A V b E . 1.5V @20A
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PT-352Ã
150PC
2N5552
2N5552
PT-3526
IC 3526
powertech
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transistor D 288
Abstract: TRANSISTOR L 287 A BD288 K1768 S100 transistor tcam BD287 Q62702-D900 Q62702-D901 Q62902-B62
Text: 2SC D • T - 3 3-'? fl23Sb05 000M3M2 7 M S I E 6 BD 287 BD 288 PIMP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04342 °- BD 287 and BD 288 are epitaxial planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector Is electrically connected to the metallic mounting area.
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fl23SbG5
0Q043M2
T-33-'
Q62702-D900
Q62702-D901
Q62902-B63
Q62902-B62
QQ0M345
transistor D 288
TRANSISTOR L 287 A
BD288
K1768
S100 transistor
tcam
BD287
Q62702-D900
Q62702-D901
Q62902-B62
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cbc 547
Abstract: TRANSISTOR D 471 BF469 BF471 Q62702-F497 Q62702-F507 Q62902-B62 Q62902-B63 Transistor A 471 K3030
Text: 2SC D • ÖSBSbOS 0QQ4Men 7 ■ SIEG_,'. IMPN Silicon Planar Transistors BF 469 BF 471 SIEMENS AKTIENGESELLSCHAF BF 4 6 9 and BF 471 are epitaxial NPN silicon Planartransistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is conductively connected to the metallic
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Q62702-F497
Q62702-F507
Q62902-B63
Q62902-B62
BF469
BF471
10zmA
cbc 547
TRANSISTOR D 471
BF471
Q62702-F497
Q62702-F507
Q62902-B62
Q62902-B63
Transistor A 471
K3030
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npn transistor w27
Abstract: TRANSISTOR AH-10 S100 NPN Transistor
Text: CAL O GI C CORP l4flE ]> lflMM322 0 0 0 0 3 3 2 6 m C G C caloric CORPORATION 'TTTt-zn V LM114 /LM114H/LM114A /LM114AH GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transistors fabricated on a single silicon substrate. This
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lflMM322
LM114/
LM114AH
LM114
/LM114H/LM114A
/LM114AH
LM114A,
npn transistor w27
TRANSISTOR AH-10
S100 NPN Transistor
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BDX34C
Abstract: BOX34 BDX34B transistor BDX34 65 AIR LB 8DX34A
Text: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SIUCON POWER DARLINGTONS Copyright 1997. Power Innovations Limited, UK_ • AUGUST 1983 - REVISED MARCH 1907 Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D • 70 W at 25°C Case Temperature
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BDX34,
BDX34A,
BDX34B,
BDX34C,
BDX34D
BDX33,
BDX33A,
BDX33B,
BDX33C
BDX33D
BDX34C
BOX34
BDX34B
transistor BDX34 65
AIR LB
8DX34A
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Untitled
Abstract: No abstract text available
Text: T? nARKTECH INTER NAT IONAL Ü 'lsT 'H b S S 0000105 5 TEAMSIiTOB COUPLER 87D 00105 5799655 M A R K T E C H INTERNATIONAL 4N25, 25A Gails INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS • AC LINE/DIGITAL LOGIC ISOLATOR • DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR
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FE1431
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