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    S100 TRANSISTOR Search Results

    S100 TRANSISTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    S100 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PS-S100

    Abstract: No abstract text available
    Text: PS-S100 Series • Universal AC input / full range • Protections: Short Circuit / Overload / Overvoltage / Over temperature • ZCS/ZVS technology to reduce power dissipation • Cooling by free air convection • DIN rail mountable • DC OK relay contact


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    PDF PS-S100 PS-S10012 PS-S10024 PS-S10048 120mVp-p 150mVp-p 200mVp-p 20MHz

    Untitled

    Abstract: No abstract text available
    Text: PS-S100 Series Specifications SAVER ENERGY ENERGY SAVER OUTPUT OUTPUT Features: • Universal AC input / full range • Protections: Short Circuit / Overload / Overvoltage / Over temperature • ZCS/ZVS technology to reduce power dissipation • Cooling by free air convection


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    PDF PS-S100 PS-S10012 PS-S10024 PS-S10048 120mVp-p 150mVp-p 200mVp-p 20MHz

    S100 NPN Transistor

    Abstract: S100-28 S100 transistor
    Text: S100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 100-28 is designed for HF linear applications up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 16 dB min. at 100 W/30 MHz • High linear power output • IMD = -32 dBc max. at 100 W PEP


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    PDF S100-28 112x45° S100 NPN Transistor S100-28 S100 transistor

    S100 NPN Transistor

    Abstract: S100 transistor SHD431101S
    Text: SHD431101 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 645, REV. B NPN SWITCHING TRANSISTOR SHD431101S - S-100 JANTX Screening SHD431101ST - S-100 (JANTX) Screening, Solder dipped • Hermetic, Ceramic Package • Electrically Equivalent to MMBT2369A


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    PDF SHD431101 SHD431101S S-100 SHD431101ST MMBT2369A S100 NPN Transistor S100 transistor

    DIN 1707

    Abstract: pin configuration transistor BC547 smd packaging darkness controlled light switch system din en 29454-1 ICL 7107 Application Notes 868 MHZ wireless audio transmitter schematic BAS 216 SMD 70.2 marking smd npn Transistor solar cells circuit diagram ICL 7107
    Text: RF Sensor Transmitter Module STM 100 User Manual V1.5 September 2005 Revision History The following major modifications and improvements have been made: Version Major Changes V1.1 V1.2 V1.3 • • • • • • • • • • • • V1.4 V1.5 • •


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    PDF EPM100 868MHz DIN 1707 pin configuration transistor BC547 smd packaging darkness controlled light switch system din en 29454-1 ICL 7107 Application Notes 868 MHZ wireless audio transmitter schematic BAS 216 SMD 70.2 marking smd npn Transistor solar cells circuit diagram ICL 7107

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD426306 TECHNICAL DATA DATA SHEET 849 REV. A BIPOLAR POWER TRANSISTOR ADD SUFFIX “S” TO PART NUMBER FOR S-100 LEVEL SCREENING DESCRIPTION: A SINGLE NPN POWER TRANSISTOR IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS RATING (ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED).


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    PDF SHD426306 S-100 O-257 O-257

    5004 bridge rectifier

    Abstract: No abstract text available
    Text: DATA SHEET 2044 REV. C SENSITRON SEMICONDUCTOR S-100 SCREENING PROCEDURE All parts procured with S-100 Screening shall be 100% screened in accordance with one of the three following procedures, as applicable. All testing is performed at room temperature. For testing at high and low temperatures,


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    PDF S-100 MIL-PRF-19500, MIL-STD-750 3131not 5004 bridge rectifier

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1880A LTC2874 Quad IO-Link Master Hot Swap Controller and PHY Description Demonstration circuit 1880A showcases the LTC 2874, a quad Hot Swap controller and PHY suitable for IO-Link® master and other applications. DC1880A operates from an external supply VDD and utilizes the DC590 USB serial


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    PDF DC1880A LTC2874 DC1880A DC590 LTC2874 com/demo/DC1880A dc1880af

    Untitled

    Abstract: No abstract text available
    Text: SHD419205 PNP SHD419305 NPN SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 647, REV. A Complementary Bi-Polar Power Transistors NPN / PNP Designed for use as high-frequency drivers in audio amplifiers. SHD419205S PNP / SHD419305S (NPN) - S-100 (JANTX) Screening


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    PDF SHD419205 SHD419305 SHD419205S SHD419305S S-100 150Vdc

    shd4321

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD432001 TECHNICAL DATA DATA SHEET 381, REV – Formerly part number – SHD4321 SMALL SIGNAL TRANSISTOR Add Suffix “S” for S-100 Screening DESCRIPTION: DUAL PNP SMALL SIGNAL TRANSISTOR IN A SURFACE MOUNT CERAMIC LCC-6 PACKAGE.


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    PDF SHD4321 SHD432001 S-100 shd4321

    shd4322

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD432102D TECHNICAL DATA DATA SHEET 952, REV. A Formerly Part Number SHD4322 DUAL SMALL SIGNAL HIGH SPEED SWITCHING TRANSISTOR Add Suffix “S” for S-100 Screening DESCRIPTION: DUAL PNP SMALL SIGNAL TRANSISTOR IN A SURFACE MOUNT CERAMIC LCC-6 PACKAGE.


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    PDF SHD4322 SHD432102D S-100 shd4322

    92CS-B2646

    Abstract: b2646
    Text: I CD40110B Types v Tex a s In s t r u m e n t s Data sheet acquired from Harris S em iconductor SC H S100 CMOS Decade Up-Down Counter/Latch/Display Driver High-Voltage Type 20-V Rating a i 2 3 H5 5 1 B3 i £ 3 4 5 6 7 B 8 9 2 C S -3 I3 8 0 F e a tu re s :


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    PDF CD40110B 92CS-B2646 b2646

    power transistor mrc 438

    Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
    Text: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase


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    PDF 23SbQS 0Q043bfl BD434 BD440 BD442 434/BD 436/BD BD434. BD438. fl23SbO power transistor mrc 438 mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439

    TRANSISTOR D 471

    Abstract: transistor BR 471 A S100 NPN Transistor transistor 547 b 471 npn
    Text: 2SC D • ßSBSbOS OQQMMR'l 7 « S I E NPN Silicon Planar Transistors G , ~ T ~ 3 l BF 469 BF 471 SIEMENS AKT IE NG ES E L LS C H A F BF 4 6 9 and BF 471 are epitaxial NPN silicon Planartransistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is conductively connected to the metallic


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    PDF 62702-F497 62702-F507 Q62902-B63 Q62902-B62 BF471 535b05 GQQ45Q1 BF469 TRANSISTOR D 471 transistor BR 471 A S100 NPN Transistor transistor 547 b 471 npn

    S100 NPN Transistor

    Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503
    Text: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF


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    PDF fl23SbOS 00Q4507 Q62702-F574 S100 NPN Transistor BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503

    S100 NPN Transistor

    Abstract: No abstract text available
    Text: u r 2SC D • fl23 Sb05 GGQ4507 S NPN Silicon RF Transistor isiEG : -~r-S i- M BF 503 -SIEMENS AKTIENGESELLSCHAF - ;— BF 5 0 3 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 DIN 4 1 8 6 8 .


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    PDF GGQ4507 E--08 S100 NPN Transistor

    transistor bD 288

    Abstract: TRANSISTOR 287 A transistor D 288 transistor bd 126 R339
    Text: 2SC D • ô23Sb05 0Q0M3M2 7 M S I E 6 PIMP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04342 T -3 3 -/? BD 287 BD 288 ° - BD 287 and BD 288 are epitaxial planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is electrically connected to the metallic mounting area.


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    PDF 23Sb05 125min. 62702-D Q62702-D901 62902-B63 62902-B62 023SbQ5 23SbQS transistor bD 288 TRANSISTOR 287 A transistor D 288 transistor bd 126 R339

    TA8101N

    Abstract: 8428K TA8101 76494P 7291P 62803P tc9201f 7288P 7262-F 8407P
    Text: 3. APPLICATIONS 3-1 Applications List E lectronic equipm ents contains th eir ow n m ain and auxiliary drives; th eir m o to r types and drive circuits are selected in accordance w ith th e necessary properties for such parts. The following are application circuits considered m ost com m on, listed fo r devices.


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    PDF TA8401/AP, TA7272P TA8407P 8407F TA8102P 8212F 8212F TA8410P/AP TA8410P TA8101N 8428K TA8101 76494P 7291P 62803P tc9201f 7288P 7262-F 8407P

    2N5552

    Abstract: PT-3526 IC 3526 powertech
    Text: GD0D3E1 7 1?E D "BIG IDEAS IN BIG POWER” • PowerTecn POIdERTECH INC 40 AMPERES PT-3526 T - l ^ - l S HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V cE sat . 0.5V @20A h p E . 5 min. @40A V b E . 1.5V @20A


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    PDF PT-352Ã 150PC 2N5552 2N5552 PT-3526 IC 3526 powertech

    transistor D 288

    Abstract: TRANSISTOR L 287 A BD288 K1768 S100 transistor tcam BD287 Q62702-D900 Q62702-D901 Q62902-B62
    Text: 2SC D • T - 3 3-'? fl23Sb05 000M3M2 7 M S I E 6 BD 287 BD 288 PIMP Silicon Planar Transistors SIEMENS AKTIENGESELLSCHAF 04342 °- BD 287 and BD 288 are epitaxial planar transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector Is electrically connected to the metallic mounting area.


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    PDF fl23SbG5 0Q043M2 T-33-' Q62702-D900 Q62702-D901 Q62902-B63 Q62902-B62 QQ0M345 transistor D 288 TRANSISTOR L 287 A BD288 K1768 S100 transistor tcam BD287 Q62702-D900 Q62702-D901 Q62902-B62

    cbc 547

    Abstract: TRANSISTOR D 471 BF469 BF471 Q62702-F497 Q62702-F507 Q62902-B62 Q62902-B63 Transistor A 471 K3030
    Text: 2SC D • ÖSBSbOS 0QQ4Men 7 ■ SIEG_,'. IMPN Silicon Planar Transistors BF 469 BF 471 SIEMENS AKTIENGESELLSCHAF BF 4 6 9 and BF 471 are epitaxial NPN silicon Planartransistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is conductively connected to the metallic


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    PDF Q62702-F497 Q62702-F507 Q62902-B63 Q62902-B62 BF469 BF471 10zmA cbc 547 TRANSISTOR D 471 BF471 Q62702-F497 Q62702-F507 Q62902-B62 Q62902-B63 Transistor A 471 K3030

    npn transistor w27

    Abstract: TRANSISTOR AH-10 S100 NPN Transistor
    Text: CAL O GI C CORP l4flE ]> lflMM322 0 0 0 0 3 3 2 6 m C G C caloric CORPORATION 'TTTt-zn V LM114 /LM114H/LM114A /LM114AH GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transistors fabricated on a single silicon substrate. This


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    PDF lflMM322 LM114/ LM114AH LM114 /LM114H/LM114A /LM114AH LM114A, npn transistor w27 TRANSISTOR AH-10 S100 NPN Transistor

    BDX34C

    Abstract: BOX34 BDX34B transistor BDX34 65 AIR LB 8DX34A
    Text: BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SIUCON POWER DARLINGTONS Copyright 1997. Power Innovations Limited, UK_ • AUGUST 1983 - REVISED MARCH 1907 Designed for Complementary Use with BDX33, BDX33A, BDX33B, BDX33C and BDX33D • 70 W at 25°C Case Temperature


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    PDF BDX34, BDX34A, BDX34B, BDX34C, BDX34D BDX33, BDX33A, BDX33B, BDX33C BDX33D BDX34C BOX34 BDX34B transistor BDX34 65 AIR LB 8DX34A

    Untitled

    Abstract: No abstract text available
    Text: T? nARKTECH INTER NAT IONAL Ü 'lsT 'H b S S 0000105 5 TEAMSIiTOB COUPLER 87D 00105 5799655 M A R K T E C H INTERNATIONAL 4N25, 25A Gails INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS • AC LINE/DIGITAL LOGIC ISOLATOR • DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR


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    PDF FE1431