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    S100 NPN TRANSISTOR Search Results

    S100 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    S100 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S100 NPN Transistor

    Abstract: S100-28 S100 transistor
    Text: S100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 100-28 is designed for HF linear applications up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 16 dB min. at 100 W/30 MHz • High linear power output • IMD = -32 dBc max. at 100 W PEP


    Original     		PDF S100-28 112x45° S100 NPN Transistor S100-28 S100 transistor

    S100 NPN Transistor

    Abstract: S100 transistor SHD431101S
    Text: SHD431101 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 645, REV. B NPN SWITCHING TRANSISTOR SHD431101S - S-100 JANTX Screening SHD431101ST - S-100 (JANTX) Screening, Solder dipped • Hermetic, Ceramic Package • Electrically Equivalent to MMBT2369A


    Original     		PDF SHD431101 SHD431101S S-100 SHD431101ST MMBT2369A S100 NPN Transistor S100 transistor

    Untitled

    Abstract: No abstract text available
    Text: SHD419205 PNP SHD419305 NPN SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 647, REV. A Complementary Bi-Polar Power Transistors NPN / PNP Designed for use as high-frequency drivers in audio amplifiers. SHD419205S PNP / SHD419305S (NPN) - S-100 (JANTX) Screening


    Original     		PDF SHD419205 SHD419305 SHD419205S SHD419305S S-100 150Vdc

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD426306 TECHNICAL DATA DATA SHEET 849 REV. A BIPOLAR POWER TRANSISTOR ADD SUFFIX “S” TO PART NUMBER FOR S-100 LEVEL SCREENING DESCRIPTION: A SINGLE NPN POWER TRANSISTOR IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS RATING (ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED).


    Original     		PDF SHD426306 S-100 O-257 O-257

    DIN 1707

    Abstract: pin configuration transistor BC547 smd packaging darkness controlled light switch system din en 29454-1 ICL 7107 Application Notes 868 MHZ wireless audio transmitter schematic BAS 216 SMD 70.2 marking smd npn Transistor solar cells circuit diagram ICL 7107
    Text: RF Sensor Transmitter Module STM 100 User Manual V1.5 September 2005 Revision History The following major modifications and improvements have been made: Version Major Changes V1.1 V1.2 V1.3 • • • • • • • • • • • • V1.4 V1.5 • •


    Original     		PDF EPM100 868MHz DIN 1707 pin configuration transistor BC547 smd packaging darkness controlled light switch system din en 29454-1 ICL 7107 Application Notes 868 MHZ wireless audio transmitter schematic BAS 216 SMD 70.2 marking smd npn Transistor solar cells circuit diagram ICL 7107

    SS100 TRANSISTOR

    Abstract: npn transistor ss100 transistor ss100
    Text: SENSITRON SEMICONDUCTOR SHD426110 TECHNICAL DATA DATA SHEET 4292, REV. - NPN POWER TRANSISTOR • Hermetic Package • Generic Part Number 2N5154 • JANTX Screening S-100 available, add an “S” to the end of the part number • JANS Screening (SS-100) Available, add an “SS” to the end of the part number


    Original     		PDF SHD426110 2N5154 S-100) SS-100) SS100 TRANSISTOR npn transistor ss100 transistor ss100

    Untitled

    Abstract: No abstract text available
    Text: SHD431006 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 678, REV. - PNP SWITCHING TRANSISTOR SHD431006S - S-100 JANTX Screening • Hermetic, Ceramic Package • Electrically Equivalent to 2N3906 • Surface Mount Package Absolute Maximum Ratings* Symbol


    Original     		PDF SHD431006 SHD431006S S-100 2N3906

    Zener Diode minimelf

    Abstract: 3 Ampere zener diode bz84c DIODE S1M DO-214AC S1m diode S100 NPN Transistor SMA SMB diode guide TVS diode MELF Zener Diode SOT-23 10 Ampere Schottky bridge
    Text: HIGH QUALITY FLAT PACK RECTIFIERS The Surge line of glass passivated silicon SMA/SMB/SMC surface mount flat pack rectifiers provide greater PC board stability over traditional MELF packages, making these discrete components ideal for design engineers who need high reliability in a tight package.


    Original     		PDF 5SMCJ170CA 5SMCJ170A DO-214AC) DO-214AB) 0SMCJ170CA 0SMCJ170A BAS16 BAS21 BAV70. Zener Diode minimelf 3 Ampere zener diode bz84c DIODE S1M DO-214AC S1m diode S100 NPN Transistor SMA SMB diode guide TVS diode MELF Zener Diode SOT-23 10 Ampere Schottky bridge

    transistor C546

    Abstract: transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524
    Text: TI TAS5100EVM DESIGN DOCUMENT SLEU010A January 2002 Thunderbird TAS5100EVM Design Document Texas Instruments Claus Reckweg Content TAS5100EVM Schematic Version 13.00 6 pages TAS5100EVM Parts List Version 9.00 (5 pages) TAS5100EVM PCB Specification Version 2.00


    Original     		PDF TAS5100EVM SLEU010A transistor C546 transistor C547 npn smd diode C543 transistor c693 smd diode c548 transistor C372 c528 transistor c545 transistor transistor c367 smd diode c524

    TRANSISTOR D 471

    Abstract: transistor BR 471 A S100 NPN Transistor transistor 547 b 471 npn
    Text: 2SC D • ßSBSbOS OQQMMR'l 7 « S I E NPN Silicon Planar Transistors G , ~ T ~ 3 l BF 469 BF 471 SIEMENS AKT IE NG ES E L LS C H A F BF 4 6 9 and BF 471 are epitaxial NPN silicon Planartransistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is conductively connected to the metallic


    OCR Scan     		PDF 62702-F497 62702-F507 Q62902-B63 Q62902-B62 BF471 535b05 GQQ45Q1 BF469 TRANSISTOR D 471 transistor BR 471 A S100 NPN Transistor transistor 547 b 471 npn

    power transistor mrc 438

    Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
    Text: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase


    OCR Scan     		PDF 23SbQS 0Q043bfl BD434 BD440 BD442 434/BD 436/BD BD434. BD438. fl23SbO power transistor mrc 438 mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439

    S100 NPN Transistor

    Abstract: BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503
    Text: L¿ I 2SC D • flE35b05 GGG4507 S NPN Silicon RF Transistor I SI E 6 BF 503 SIEMENS AKTIENGESELLSCHAF BF 5 0 3 is an NPN silicon planar RF transistor in TO 92 plastic package 10 A 3 DIN 41868 . The transistor is particularly intended for use in VHF amplifiers, VH F mixers, and VHF


    OCR Scan     		PDF fl23SbOS 00Q4507 Q62702-F574 S100 NPN Transistor BF603 S100 transistor BF503 Q62702-F574 S100 S400 transistor 503

    S100 NPN Transistor

    Abstract: No abstract text available
    Text: u r 2SC D • fl23 Sb05 GGQ4507 S NPN Silicon RF Transistor isiEG : -~r-S i- M BF 503 -SIEMENS AKTIENGESELLSCHAF - ;— BF 5 0 3 is an NPN silicon planar RF transistor in TO 9 2 plastic package 1 0 A 3 DIN 4 1 8 6 8 .


    OCR Scan     		PDF GGQ4507 E--08 S100 NPN Transistor

    npn transistor w27

    Abstract: TRANSISTOR AH-10 S100 NPN Transistor
    Text: CAL O GI C CORP l4flE ]> lflMM322 0 0 0 0 3 3 2 6 m C G C caloric CORPORATION 'TTTt-zn V LM114 /LM114H/LM114A /LM114AH GENERAL DESCRIPTION FEATURES These devices contain a pair of junction-isolated NPN transistors fabricated on a single silicon substrate. This


    OCR Scan     		PDF lflMM322 LM114/ LM114AH LM114 /LM114H/LM114A /LM114AH LM114A, npn transistor w27 TRANSISTOR AH-10 S100 NPN Transistor

    cbc 547

    Abstract: TRANSISTOR D 471 BF469 BF471 Q62702-F497 Q62702-F507 Q62902-B62 Q62902-B63 Transistor A 471 K3030
    Text: 2SC D • ÖSBSbOS 0QQ4Men 7 ■ SIEG_,'. IMPN Silicon Planar Transistors BF 469 BF 471 SIEMENS AKTIENGESELLSCHAF BF 4 6 9 and BF 471 are epitaxial NPN silicon Planartransistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . The collector is conductively connected to the metallic


    OCR Scan     		PDF Q62702-F497 Q62702-F507 Q62902-B63 Q62902-B62 BF469 BF471 10zmA cbc 547 TRANSISTOR D 471 BF471 Q62702-F497 Q62702-F507 Q62902-B62 Q62902-B63 Transistor A 471 K3030

    Untitled

    Abstract: No abstract text available
    Text: T? nARKTECH INTER NAT IONAL Ü 'lsT 'H b S S 0000105 5 TEAMSIiTOB COUPLER 87D 00105 5799655 M A R K T E C H INTERNATIONAL 4N25, 25A Gails INFRARED EMITTING DIODE & NPN SILICON PHOTO TRANSISTOR APPLICATIONS • AC LINE/DIGITAL LOGIC ISOLATOR • DIGITAL LOGIC/DIGITAL LOGIC ISOLATOR


    OCR Scan     		PDF FE1431

    WT160-P162

    Abstract: SICK IR Sensor
    Text: W T 160 W T 160 -P /N 172 -P /N 112 -P /N 152 ~ 11 n = n T~ - i- cK 1 m - i- ^4 -it, CO 1 f W T 160 -P /N 470 -P /N 410 -P /N 450 Scanning Range 50 m m 80 m m 300 m m Features: • 3 different optics 23— ► t W T 160 -P / N 182 -P / N 122 -P / N 162 n — fT


    OCR Scan     		PDF 160P162 WT160- 160P410 WT160-P162 SICK IR Sensor

    TA8101N

    Abstract: 8428K TA8101 76494P 7291P 62803P tc9201f 7288P 7262-F 8407P
    Text: 3. APPLICATIONS 3-1 Applications List E lectronic equipm ents contains th eir ow n m ain and auxiliary drives; th eir m o to r types and drive circuits are selected in accordance w ith th e necessary properties for such parts. The following are application circuits considered m ost com m on, listed fo r devices.


    OCR Scan     		PDF TA8401/AP, TA7272P TA8407P 8407F TA8102P 8212F 8212F TA8410P/AP TA8410P TA8101N 8428K TA8101 76494P 7291P 62803P tc9201f 7288P 7262-F 8407P

    2N222A

    Abstract: N2222 zs90 2N222 BFS61 ZS150 2n3600 BFS59 2N222-A BFX84
    Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n Maximum Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A BFS59 BFS60 BFS61 BFX84 BFX8S BFY50 BFY51 BFY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT86 ZT87 ZT88 ZT89 ZT90 ZT91 ZT92


    OCR Scan     		PDF BFS59 BFS60 BFS61 BFS96-98 BFX84 KS77B KS78B 2N222A N2222 zs90 2N222 ZS150 2n3600 2N222-A

    Transistor 7f3

    Abstract: Y17F-1 CHY17F-1 C1885 Transistor VV5300 STK 027 CHY17 C1885 Y17F2
    Text: PHOTOTRANSISTOR OPTOCOUPLERS iniEUtIBHiC! CHY17F-1 CNY17F-2 CNY17F-3 & The CNY1? series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor. tii & O _ • High isolation voltage m 5300 VAC RMS—1 minute 7500 VAC PEA K -1 minute


    OCR Scan     		PDF CHY17F-1 CNY17F-2 CNY17F-3 CNY17F1: Y17F2: CNY17F3: ST1603A C168C C1243 C1885 Transistor 7f3 Y17F-1 C1885 Transistor VV5300 STK 027 CHY17 C1885 Y17F2

    ferranti ula

    Abstract: pia 6820 yx 805 led driver IC CD 4440 cs pic RAM 2102 RADIO SHACK PARTS CROSS REF 74L73 8251 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER yx 801 led driver 1702a eprom
    Text: O <D & P o O o o ^ 0 3 1 0897-X $ 1 4.50 THE S-100 BUS HANDBOOK Dave Bursky H e r e ’s a c o m p re h e n s iv e b o o k th a t d is c u s s e s th e S -1 0 0 bus e q u ip m e n t an d h o w it is o rg a n iz e d . It c o v e rs c o m p u te r fu n d a m e n ta ls , b a s ic e le c tro n ic s ,


    OCR Scan     		PDF 0897-X S-100 ferranti ula pia 6820 yx 805 led driver IC CD 4440 cs pic RAM 2102 RADIO SHACK PARTS CROSS REF 74L73 8251 UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER yx 801 led driver 1702a eprom

    ps2805-4

    Abstract: No abstract text available
    Text: HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE SOP OPTOCOUPLER DESCRIPTION FEATURES PS2805-1 and PS2805-4 are optically coupled isolators con­ taining a GaAs light emitting diode and an NPN silicon phototransistor in a plastic SOP Small Out-Line Package for


    OCR Scan     		PDF PS2805-1 PS2805-4 PS2805-4 PS2805-1-F3, PS2805-4-F3 24-Hour

    ZLD0485

    Abstract: No abstract text available
    Text: 4.85 VOLT ULTRA LOW DROPOUT REGULATOR ISSUE 1 - DECEMBER 1995 FEATURES The ZLDO Series low dropout linear regulators operate with an exceptionally low dropout voltage, typically only 30mV with a load current of 100mA. The regulatorseries features output voltages in the range 3.3 to 18 volts, this


    OCR Scan     		PDF 100mA. ZLD0485 630jiA 300mA. 300mV

    SBMT2222A

    Abstract: Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A
    Text: Summary of types Switching diodes Type BAL 74 VI o in BAL 99 BAR 74 BAR 99 BAS 16 BAS 19 BAS 20 BAS 21 BAS 28 Dual BAS 78 A BAS 78 B BAS 78 C BAS 78 D BAS 79 A (Dual) BAS 79 B (Dual) BAS 79 C (Dual) BAS 79 D (Dual) BAS 116 BAV 70 (Dual) BAV 74 (Dual) BAV 99 (Dual)


    OCR Scan     		PDF 100ic OT-143 OT-143 KTY13B OT-23 OT-23 KSY13 SBMT2222A Siemens MOSFET S100 712 sot23 mosfet AL25-100 682 SOT-23 sod-123 4007 RF Transistors sot-23 pj 989 359 sot23 KTY13A