AN749
Abstract: AN-749 MAX1470 MAX2116 IIP31 IIP22
Text: WIRELESS, RF, AND CABLE Application Note 749: May 17, 2001 Improving Receiver Intercept Point Using Selectivity The receiver's intermodulation spurious response attenuation is a measure of the receiver's ability to receive a modulated input RF signal frequency on its assigned
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MAX1470:
MAX2116:
MAX2320:
MAX2338:
MAX2410:
MAX2420:
MAX2700:
MAX2820:
com/an749
AN749
AN-749
MAX1470
MAX2116
IIP31
IIP22
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AN749
Abstract: AN-749 MAX1470 MAX2116 IIP31
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, rf design, radio frequency May 17, 2001 APPLICATION NOTE 749 Improving Receiver Intercept Point Using Selectivity Abstract: The receiver's intermodulation spurious response attenuation is a measure of the receiver's ability to
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MAX1470:
MAX2116:
MAX2320:
MAX2338:
MAX2410:
MAX2420:
MAX2538:
MAX2700:
MAX2820:
AN749,
AN749
AN-749
MAX1470
MAX2116
IIP31
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BFP620 applications note
Abstract: BFP540 AN057 BCR400R BCR400W BFP620 LQG10A MS10 MS11 MS12
Text: Applications Note No. 060 Silicon Discretes A High Third-Order Intercept Low Noise Amplifier for 1900 MHz Applications Using the Silicon-Germanium BFP620 Transistor • Gain = 14.7 dB • Very Low Noise Figure = 1.05 dB • High Input 3rd-Order Intercept Point = +10 dBm
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BFP620
BFP620
lowMay-2000
LQP10A
LQG10A
05-Oct-2000
AN060
BFP620 applications note
BFP540
AN057
BCR400R
BCR400W
MS10
MS11
MS12
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f541m43b
Abstract: 2N2040 transistor D210 transistor s2p WL30 ATF-54143 ATF541M4 ATF551M4 BCV62 TL34
Text: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725–5.825 GHz Applications using the Avago ATF-541M4 Enhancement Mode PHEMT Application Note 1350 Introduction Avago Technologies’ ATF-541M4 is a low noise high intercept point enhancement mode PHEMT designed
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ATF-541M4
ATF-541M4
5988-9004EN
f541m43b
2N2040
transistor D210
transistor s2p
WL30
ATF-54143
ATF541M4
ATF551M4
BCV62
TL34
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TRANSISTOR W25
Abstract: TL39 Phycomp TL42 TL34 ATF-54143 ATF-541M4 ATF-551M4 BCV62 w21 transistor
Text: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725– 5.825 GHz Applications using the Agilent ATF-541M4 Enhancement Mode PHEMT Application Note 1350 to its 400 micron equivalent, the ATF-551M4, the ATF-541M4 provides greater power output with
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ATF-541M4
ATF-551M4,
ATF-54143
SC-70
ATF-541M4)
5988-9004EN
TRANSISTOR W25
TL39
Phycomp
TL42
TL34
ATF-54143
ATF-551M4
BCV62
w21 transistor
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Untitled
Abstract: No abstract text available
Text: Product Information ISO 9001 CERTIFIED 6001 5.150 to 5.300 GHz GaAs MMIC Hiperlan Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ 25 dB Small Signal Gain 24dBm Linear Output Power 34dBm Third Order Intercept Point Thermally Optimum Moly-Copper Package
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24dBm
34dBm
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Teledyne Wireless
Abstract: No abstract text available
Text: Product Information ISO 9001 CERTIFIED 6001 5.150 to 5.300 GHz GaAs MMIC Hiperlan Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ +23 dBm Output Power @1 dB Gain Compression 23 dB Minimum Small Signal Gain 34dBm Third Order Intercept Point Surface Mount, Thermally Optimum
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34dBm
33dBm.
Teledyne Wireless
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AN749
Abstract: APP749 MAX1470 MAX2116 MAX2320 MAX2338 MAX2410 MAX2420 MAX2538 MAX2700
Text: Maxim > App Notes > Wireless and RF Keywords: rf, rf design, radio frequency, RF, Intercept point, IP, intermodulation, IM, continuous wave, CW, IIP2, IIP3, IM, IIM3, carrierto-interference ratio, C/I May 01, 2002 APPLICATION NOTE 749 Use selectivity to improve receiver intercept point
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MAX2538
MAX2700
MAX2820
com/an749
AN749,
APP749,
Appnote749,
AN749
APP749
MAX1470
MAX2116
MAX2320
MAX2338
MAX2410
MAX2420
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Untitled
Abstract: No abstract text available
Text: Product Information ISO 9001 CERTIFIED 6004 5.725 to 5.825 GHz GaAs MMIC U-NII Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ 24 dB Small Signal Gain 28.5dBm Linear Output Power 41dBm Third Order Intercept Point Thermally Efficient Moly-Copper Package
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41dBm
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Untitled
Abstract: No abstract text available
Text: Product Information ISO 9001 CERTIFIED 6004 5.725 to 5.825 GHz GaAs MMIC U-NII Band Power Amplifier F e a t u rre es ♦ ♦ ♦ ♦ 27 dBm Linear Output Power 22 dB Small Signal Gain 38 dBm Third Order Intercept Point Thermally Efficient Moly-Copper Package
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Untitled
Abstract: No abstract text available
Text: Applications • WiMAX, WCDMA, and LTE base station receivers Ultra Low Noise Amplifiers LNAs • WLAN enterprise access point receivers Select LNAs Available from Stock for Prototype or High-Volume Production • GPS receivers Skyworks Solutions offers a select group of ultra low noise, high linearity low noise
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LMX2215
Abstract: HP8757 LMX2216B gilbert cell sum AN-884 C1995 Basics on Radars ge-2 transistor noise diode generator Self-Oscillating mixer
Text: National Semiconductor Application Note 884 A Dao April 1993 ABSTRACT Basic theory and operation of low noise amplifiers and mixers are presented Important figures of merits of these two devices such as gain noise figure compression point and third order intercept point are introduced and derived Measurement methods of these figures of merit are also described
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20-3A
LMX2215
HP8757
LMX2216B
gilbert cell sum
AN-884
C1995
Basics on Radars
ge-2 transistor
noise diode generator
Self-Oscillating mixer
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spectrum analyzer
Abstract: block diagram for RF transmitter AND RECEIVER frequency doubler balun high frequency mixer rf receivers x band receiver 32 band audio spectrum analyzer strong 4400 receiver
Text: Evaluation Board Documentation TRF1500 Integrated Dual-Band RF Receiver User’s Guide APPLICATION BRIEF: SWRA004A Wireless Communications Business Unit Digital Signal Processing Solutions July 98 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any
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TRF1500
SWRA004A
spectrum analyzer
block diagram for RF transmitter AND RECEIVER
frequency doubler balun
high frequency mixer
rf receivers
x band receiver
32 band audio spectrum analyzer
strong 4400 receiver
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BFP420
Abstract: BFP420 application note POWER AMPLIFIER SCHEMATIC DIAGRAM transistor bfp420 application note amplifier transistor 902 transistor k 208 transistor 928 transistor A 928 915 transistor
Text: Ap pl ica t io n N o te, Re v. 1 . 2, F e br ua ry 2 00 8 A p p li c a t i o n N o t e N o . 1 5 8 T h e B F P 4 2 0 T r a n s i s t o r a s a Lo w - C o s t 90 0 M H z ISM Band Power Amplifier R F & P r o t e c ti o n D e v i c e s Edition 2008-02-27 Published by
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BFP420
BFP420 application note
POWER AMPLIFIER SCHEMATIC DIAGRAM
transistor bfp420
application note amplifier
transistor 902
transistor k 208
transistor 928
transistor A 928
915 transistor
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A2069
Abstract: AN0017 CHA2069-QDG MO-220
Text: CHA2069-QDG RoHS COMPLIANT 18-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage self-biased wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multipoint, VSAT to ISM and military markets.
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CHA2069-QDG
18-30GHz
CHA2069-QDG
A2069
18-30GHz
20dBm
DSCHA2069QDG9322-
A2069
AN0017
MO-220
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ATF-54143
Abstract: ATF-641 ATF-10236 ATF-55143 ATF-54143 sot-343 variable power divider at 15 ghz ATF10236 atf54143 pHEMT 9015 transistor sot 23 SC 9015
Text: A Low Noise High Intercept Point Amplifier for 900 MHz Applications using the Agilent ATF-54143 PHEMT Application Note 1299 1. Introduction The Agilent Technologies ATF-54143 is a low noise enhancement mode PHEMT designed for use in low cost commercial applications in the
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ATF-54143
source71
5988-6670EN
ATF-10236
ATF-641
ATF-10236
ATF-55143
ATF-54143 sot-343
variable power divider at 15 ghz
ATF10236
atf54143 pHEMT
9015 transistor sot 23
SC 9015
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5.7 GHz power amplifier
Abstract: tag 725 TAG-1030
Text: Product Information ISO 9001 CERTIFIED TA G - 1 0 3 0 5.725 to 5.825 GHz GaAs MMIC U-NII Band Power Amplifier F e a t u rre es: ♦ ♦ ♦ ♦ 23 dB Small Signal Gain 26 dBm Minimum Linear Output Power 34 dBm 3rd Order Intercept Point Thermally Efficient Moly-Copper Package
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TAG-1030
5.7 GHz power amplifier
tag 725
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Untitled
Abstract: No abstract text available
Text: CHA2069-QDG RoHS COMPLIANT 18-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2069-QDG is a three-stage self-biased wide band monolithic low noise amplifier. Typical applications range from telecommunication point to point, point to multipoint, VSAT to ISM and military markets.
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CHA2069-QDG
18-30GHz
CHA2069-QDG
A2069
YYWW11
18-30GHz
DSCHA2069QDG9322-
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION DEFINITIONS GENERAL SPECIFICATIONS Most models defined within this catalog are classified by several specifications, namely: taken at several points within the band; however, in all cases, the amplifier gain has been measured in a swept fashion with performance verified over the
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a872 TRANSISTOR equivalent
Abstract: WJ-331240 WJ-A15 free transistor a7s wj331240 WJA9 WATKINS-JOHNSON CO WJA15 WJ PA15 A19F
Text: Application Information for Thin Film Cascadable Amplifiers INSIDE THE TO-8 AMPLIFIER: BASIC CIRCUIT CONCEPTS This discussion covers the basic circuit concept behind the cascadable amplifier and details some of the techniques that are used to maintain hardware stability in the
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HP340B
a872 TRANSISTOR equivalent
WJ-331240
WJ-A15
free transistor a7s
wj331240
WJA9
WATKINS-JOHNSON CO
WJA15
WJ PA15
A19F
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Untitled
Abstract: No abstract text available
Text: 1W GaAs Power Amplifier 5 - 6 GHz ITT6402CT ADVANCED INFORMATION FEATURES Detected Power Pin High Gain: 22 dB typical at P1dB High Power Added Efficiency: >40% typical at P1dB 50 Q Input/Output Impedance 40 dBm Third Order Intercept Point 7 dB Noise Figure
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ITT6402CT
ITT6402CT
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SFD1001
Abstract: wj sfd1001 ICS1001 "ku band" amplifier SME1400 E9001 SR1019 SME1400B-10 icl1001
Text: PRODUCT SELECTION GUIDE: By Specifications RF Products: <2.5 GHz AMPLIFIERS Frequency Small Gain Noise Power Output Range Signal Gain Flatness Figure at 1 dB Compression Intercept VSW R MHz (dB) (±dB) (dB) (dBm) Point (dBm) (i/O) Volts mA Type AH1 450-3000
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A3010-1
SA1032
OT-89
J1-10
J1-13
J2-10
J2-13
J3-10
J3-13
E900-17
SFD1001
wj sfd1001
ICS1001
"ku band" amplifier
SME1400
E9001
SR1019
SME1400B-10
icl1001
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Untitled
Abstract: No abstract text available
Text: RECEIVER MULTICOUPLERS Functionality and Application The receiver multicoupler is an antenna subsystem com ponent that allows for the operation of two or more receivers connected to a common receive antenna. Re sulting signal quality to the receiver is equal to, or su
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gaas fet marking D
Abstract: No abstract text available
Text: Infineon *ai hnciogicsä GaAs MMIC CMH 0819 Preliminary Data Sheet • High-Linearity, Dual-Band LNA/Mixer 1C for use in CDMA Mobile Phones • integrated bypass switch for LNAs • GaAs PHEMT Process • Leadless 3.5 x 4.5 mm. SMT package • • LO - Input power down to: - 7.0 dBm
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P-VQFN-24-3
gaas fet marking D
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