F25NM50N
Abstract: W25NM50 p25nm50 B25NM50N p25nm50n W25NM STP25NM50 W25NM50N
Text: STx25NM50N N-channel 500 V, 0.11 Ω, 22 A MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features Type VDSS @Tjmax RDS(on) max ID 3 ) s ( ct 3 STB25NM50N 550 V < 0.140 Ω 22 A STB25NM50N-1 550 V < 0.140 Ω 22 A STF25NM50N 550 V < 0.140 Ω
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STx25NM50N
O-220,
O-220FP,
O-247
STB25NM50N
STB25NM50N-1
STF25NM50N
STP25NM50N
STW25NM50N
O-220FP
F25NM50N
W25NM50
p25nm50
B25NM50N
p25nm50n
W25NM
STP25NM50
W25NM50N
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M3-125-SAT
Abstract: INGT165B INGR165B finisar app note FINISAR TOP MARKING v23826-k305 5179009-6
Text: PRODUCT DATASHEET Order this document by ING_TRF_DS The GigaSTaR optical piggyback board ING_TRF represents an easy-to-use implementation of a full-duplex GigaSTaR High-Speed link with 2.64 Gbit/s 2 x 1.32 Gbit/s bandwidth for long distance transmission (up to 550 m) on multimode
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INGT165B/INGR165B,
M3-125-SAT
INGT165B
INGR165B
finisar app note
FINISAR TOP MARKING
v23826-k305
5179009-6
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DAC8850
Abstract: Texas Instruments 8010 *C8550 DAC85501 DAC8550
Text: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:
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DAC8550
SLAS476E
16-BIT,
DAC8550
16-bit
30MHz
DAC8850
Texas Instruments 8010
*C8550
DAC85501
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DAC8850
Abstract: sk 8010 DAC8550
Text: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:
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DAC8550
SLAS476E
16-BIT,
16-Bit
DAC8531/01
DAC8551
DAC8850
sk 8010
DAC8550
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PDF
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DAC8550
Abstract: No abstract text available
Text: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:
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DAC8550
SLAS476E
16-BIT,
16-Bit
DAC8531/01
DAC8551
DAC8550
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PDF
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DAC8550
Abstract: No abstract text available
Text: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:
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Original
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DAC8550
SLAS476E
16-BIT,
DAC8550
16-bit
30MHz
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PDF
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DAC8550
Abstract: No abstract text available
Text: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:
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DAC8550
SLAS476E
16-BIT,
16-Bit
DAC8531/01
DAC8551
DAC8550
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PDF
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ATA06211
Abstract: ATA06211D1C
Text: ATA06211 AGC Transimpedance Amplifier SONET OC-12 PRELIMINARY DATA SHEET-Rev 4 FEATURES • Single +5 Volt Supply · Automatic Gain Control · -32 dBm Sensitivity · 0 dBm Optical Overload · 550 MHz Bandwidth APPLICATIONS · SONET OC-12 /SDH STM-4 622Mb/s
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ATA06211
OC-12
OC-12
622Mb/s)
ATA06211
OC-12/STM-4
550MHz
ATA06211D1C
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a7125
Abstract: A745 MAGNETIC HEAD circuit Differentiator peak detect
Text: m^ _ ù M M SSI 550 4-Channel Magnetic Tape Read Circuit s _ k m s "in n o v a t oDRS r s in in t e g r a t io n IN //iN Preliminary Data Sheet GENERAL DESCRIPTION FEATURES Silicon System s’ SSI 550 combines magnetic tape head read signal a m plification and processing onto a single
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Transistor - BC 547, CL 100
Abstract: bc 104 npn transistor transistor C 548 B bc 408 equivalent BC548BC bc 558 equivalent bc 103 transistor c 548 equivalent of BC 399 NPN Transistor TRANSISTOR C 557 B
Text: BC546*BC 547 *BC 548 *BC549. BC 550 NPN S IL IC O N TR A N S IS T O R T R A N S IS T O R N P N S IL IC IU M Compì, of BC 556 at 560 Preferred device D is p o s itif recommandé General purpose BC 546/BC 547/BC 548 Usage général BC 546/BC 547/BC 548 Low noise BC 549/BC 550
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bc546
bc549.
546/bc
547/bc
549/bc
548/bc
Transistor - BC 547, CL 100
bc 104 npn transistor
transistor C 548 B
bc 408 equivalent
BC548BC
bc 558 equivalent
bc 103
transistor c 548
equivalent of BC 399 NPN Transistor
TRANSISTOR C 557 B
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C 548 B
Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
Text: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and
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Q62702-C687
Q62702-C687-V3
Q62702-C687-V1
Q62702-C687-V2
Q62702-C688
Q62702-C688-V3
Q62702-C688-V1
Q62702-C688-V2
Q6270
200Hz
C 548 B
B549C
BC650
C 547 B
TRANSISTOR BC650
transistor bc 549 equivalent
transistor C 548 B
C547B
TRANSISTOR BC 550 c
transistor c 548
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A775
Abstract: a7125 A7-12 A7-13 DC DC INPUT 24V OUTPUT 8V magnetic tape head preamplifier A7525 A7325 a7725
Text: SiliconMkms SSI 550 4-Channel Magnetic Tape Read Circuit INNOVATORS IN / INTEGRATION Preliminary Data Sheet GENERAL DESCRIPTION FEATURES Silicon System s’ SSI 550 combines magnetic tape head read signal am plification and processing onto a single integrated circuit. The device accepts up to 4 centertapped m agnetic read heads connected directly to the
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SSI550
40-PIN
44-PIN
68-C/W
A775
a7125
A7-12
A7-13
DC DC INPUT 24V OUTPUT 8V
magnetic tape head preamplifier
A7525
A7325
a7725
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Untitled
Abstract: No abstract text available
Text: LM X 2306, L M X 2 31 6, LM X 2326 LMX2306/LMX2316/LMX2326 PLLatinum Low Power Frequency Synthesizer for RF PersonalCommunications LMX2306 - 550 MHz LMX2316 -1.2 GHz LM X 23262.8 GHz Te x a s In s t r u m e n t s Literature Number: SNAS016F t OBSOLETE a l
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LMX2306/LMX2316/LMX2326
LMX2306
LMX2316
SNAS016F
LMX2306/LMX2316/LMX2326
LMX2306
LMX2316
LMX2326
LMX2306/16/26
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mc 4011
Abstract: MIL-S-19500 1N6304 1N6305 1N6306 DO-203AB
Text: The documentation and process conversion measures necessary to comply with this revision shall be cotrpleted by 30 September 1994 INCH-POUND MIL-S-19500/550A 30 June 1994 SUPERSEDING MIL-S-19500/550 USAF 21 Dec enter 1981 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DI00E, SILICON, FAST-RECOVERY, HIGH CURRENT
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MIL-S-19500/550A
MIL-S-19500/550
DI00E,
1N6304,
1N6305,
1N6306,
JANHCA1N6304)
1N6304
JANHCA1N6304
JANKCA1N6304
mc 4011
MIL-S-19500
1N6305
1N6306
DO-203AB
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Untitled
Abstract: No abstract text available
Text: GENNUM c or p o r a t i Medium Power Class B Amplifier on 550 LC55Ü DATA SHEET FEATURES DESCRIPTION • 23 dB class A preamp & 40 dB class B output stage The LC 550 is a low v o lta g e linear m o n o lith ic in te g ra te d c irc u it a m plifier. It Is co m p ris e d of tw o s ep arate a m p lifie rs
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO LTD STA304A 5SE D • TTTGTm □ D D l G EJi4 i^b ISAKJ Under development Silicon NPN Triple Diffused Planar [Maximum Ratings (Ta = 25°C) ÉâV J Î ï .*: s s m n C ollector-to-B ase Voltage VCBO 550 V C ollector-to-E m itter Voltage
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STA304A
STA300
STA400
45max
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HP5385A
Abstract: No abstract text available
Text: a t i o n a l S e m i c o n d u c t o r S eptem ber 1999 LMX2306/LMX2316/LMX2326 PLLatinum Low Power Frequency Synthesizer for RF Personal Communications LMX2306 550 MHz LMX2316 1.2 GHz LMX2326 2.8 GHz General Description Features The LM X 2306/16/26 are m onolithic, integrated frequency
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LMX2306/LMX2316/LMX2326
LMX2306
LMX2316
LMX2326
LMX2306/16/26
HP5385A
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PDF
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Untitled
Abstract: No abstract text available
Text: • Transistor Arrays STA Type No Ve» m-' ma le (V ) ' 60 ± 10 4'8 1000 S T A 3 0 2A —50 - 4 - 8 1000 STA3Q 3A 100 4 8. 1000 S T A 3 0 4A 550 1 2 S T A 3 1 2A ~~ S T A 3 2 2A 100 4 8 1000 io S T A 4 0 4A 200 3 6 1000 IO S T A 4 0 6A 0^10 6 2000 S T A 4 0 7A
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STA485A
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dyna image
Abstract: 7864
Text: a iE i Q S b 072 Q O G Q n ? D 1 — 127- T H O M S O N MIL ET S P A T I A U X TH 7864 Ho] H9J usj L12J LtâJ 115J Ht! Lül Lül lüJ Area Array CCD* Image Sensor TH 7864 576 x 550 Pixels with Antiblooming Fully Compatible Standard with CCIR TV Image 2/3"
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features cypress flash 370
Abstract: cypress flash 370 device cypress flash 370
Text: Revision: Monday, January 4,1993 57E D • 550=1^2 □ D D tlQ21 573 ■ CYP 07 CY7C373 C VPRESS SEMICONDUCTOR PRELIMINARY 7M CYPRESS SEMICONDUCTOR 64-Macrocell Flash PLD perform ance o f the 22V10 to high-density PLD s. Features • 64 m acrocells in four logic blocks
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CY7C373
84-pin
CY7C374
64-Macrocell
CY7C373
features cypress flash 370
cypress flash 370 device
cypress flash 370
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PDF
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Untitled
Abstract: No abstract text available
Text: _ S TR ATO -TH ERM Terminals & Splices for High Temperature Applications Catalog 1307612 Revised 7-01 Product Facts • Product available in tem perature ranges of 500°F t f e t m , 550°F [288°C], 650°F[343°C] and 1200°F [649°C] ■ Product employs the
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Untitled
Abstract: No abstract text available
Text: S'IE D • =iGSt.a75 0 G 0 0 2 Q S 4 t - w - s s " — 135 — THOMSON MIL ET SPATIAUX [ 20 J |19J ia j |7J [I 6 J H5j Area Array CCD* Image Sensor TH 7866 LuJ l l i l Lui luJ TH 7866 488 x 550 Pixels with Antiblooming • m m m m m mr Ti mmi i öi II Compatible with EIA RS170 TV Stan
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RS170
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Untitled
Abstract: No abstract text available
Text: CY7C185 CY7C186 CYPRESS SEMICONDUCTOR 8 ,1 9 2 x 8 Static R/W RAM Functional Description Features A u tom atic pow er-dow n w hen d eselected C M O S for op tim u m sp eed /p ow er H igh speed — 20 ns Low active power — 550 mW Low S tan d b y Pow er — 110 mW
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CY7C185
CY7C186
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sm 4109 smd
Abstract: No abstract text available
Text: CY7C251 CY7C254 0 CYPRESS Features • C M O S for optim um speed/power • W indowed for reprogram m ability • High speed Low power — 550 mW com m ercial — 660 mW (m ilitary) • • D irect replacem ent for b ipolar PR O M s • C apable o f w ith stan d in g > 2 0 0 1 V
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7C251
600-m
CY7C251
CY7C254
7C254
--65W
--65T
--65Q
sm 4109 smd
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