Untitled
Abstract: No abstract text available
Text: PRELIMINARY < High-power GaN HEMT small signal gain stage > MGF0840G L to C BAND / 10W non - matched DESCRIPTION OUTLINE DRAWING The MGF0840G, GaN HEMT with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. Unit : m illim eters FEATURES
|
Original
|
PDF
|
MGF0840G
MGF0840G,
|
s band gan 10W
Abstract: No abstract text available
Text: PRELIMINARY < High-power GaN HEMT small signal gain stage > MGF0840G L to C BAND / 10W non - matched DESCRIPTION OUTLINE DRAWING The MGF0840G, GaN HEMT with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. Unit : m illim eters FEATURES
|
Original
|
PDF
|
MGF0840G
MGF0840G,
s band gan 10W
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY < High-power GaN HEMT small signal gain stage > MGF0840G L to C BAND / 10W non - matched DESCRIPTION OUTLINE DRAWING The MGF0840G, GaN HEMT with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. Unit : m illim eters FEATURES
|
Original
|
PDF
|
MGF0840G
MGF0840G,
|
combiner THEORY
Abstract: amplifier 400W GaN microwave amplifier 100W 28V GaN amplifier 100W DSASW0033875 transformer matsunaga RFMD HEMT GaN SiC transistor 3,5Ghz, power 100w RF amplifier 400W WP100318
Text: AN RFMD WHITE PAPER RFMD. ® Wideband 400W Pulsed Power GaN HEMT Amplifiers Matthew J. Poulton, Karthik Krishnamurthy, Jay Martin, Bart Landberg, Rama Vetury, David Aichele RF Micro Devices, Inc. RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, and PowerStar® are trademarks of RFMD, LLC. All other trade names, trademarks and registered trademarks are the property of their respective
|
Original
|
PDF
|
WP100318
combiner THEORY
amplifier 400W
GaN microwave amplifier 100W 28V
GaN amplifier 100W
DSASW0033875
transformer matsunaga
RFMD HEMT GaN SiC
transistor 3,5Ghz, power 100w
RF amplifier 400W
WP100318
|
MGCF21
Abstract: LY942 MOSFET 50 amp 1000 volt Gx4002 5 watt hf mosfet
Text: polyfet rf devices LDMOS Flanged Mount Pout Freq Gain theta 28 Volt LDMOS gm Idsat Ciss Crss Coss mho A polyfet rf devices Broad Band RF Power MOSFET LDMOS Transistors Surface Mount Pout Freq Gain theta 12.5 Volt VDMOS S Series gm Idsat Ciss Crss Coss Flanged Mount
|
Original
|
PDF
|
L8821P
LB421
L8821P
LP721
SM341
LQ821
SQ701
SR401
MGCF21
LY942
MOSFET 50 amp 1000 volt
Gx4002
5 watt hf mosfet
|
MG1007-42
Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are
|
Original
|
PDF
|
MS4-009-13
MG1007-42
MG1020-M16
MSC1075M
1004mp
MG1052-30
|
TG2H214220-FL
Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Text: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4
|
Original
|
PDF
|
|
TGA2517
Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Text: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: LDMOS Transistors in Power Microwave Applications S.J.C.H. Theeuwen, H. Mollee NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen, The Netherlands steven.theeuwen@nxp.com, hans.mollee@nxp.com Abstract— LDMOS transistors have become the device choice for microwave applications. An overview is given of the LDMOS
|
Original
|
PDF
|
IEDM2006,
|
RF Power Amplifier 125KHz
Abstract: RFHA5966AX 4500m 1n4148 die GAAS FET AMPLIFIER x-band 10w RFHA5966A x-Band Hemt Amplifier 95GHZ 10Ghz RF Power 10w amplifier "15 GHz" power amplifier 41dBm
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF
|
Original
|
PDF
|
RFHA5966AX
RFHA5966A
4500m
4000m
41dBm
RFHA5966A
1N4148,
RF Power Amplifier 125KHz
1n4148 die
GAAS FET AMPLIFIER x-band 10w
x-Band Hemt Amplifier
95GHZ
10Ghz RF Power 10w amplifier
"15 GHz" power amplifier 41dBm
|
MMIC X-band amplifier
Abstract: No abstract text available
Text: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF
|
Original
|
PDF
|
RFHA5966A
RFHA5966AX
41dBm
RFHA5966A
Radar023
1N4148,
DS111023
MMIC X-band amplifier
|
MGA-495940-02
Abstract: s band gan 10W 5.8 ghz amplifier 10w spectrum emission mask
Text: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet December 2008 Features: • • • • • • • • 12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power
|
Original
|
PDF
|
MGA-495940-02
64QAM)
16d/e
MGA-495940-02
Start10
s band gan 10W
5.8 ghz amplifier 10w
spectrum emission mask
|
MGA-495940-02
Abstract: Sk 4467
Text: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier New Product Data Sheet December 2008 Features: • • • • • • • • 12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power
|
Original
|
PDF
|
MGA-495940-02
64QAM)
16d/e
MGA-495940-02
Start10
Sk 4467
|
MGA-242740-02
Abstract: 6 ghz amplifier 10w 3360D
Text: MGA-242740-02 2.4 – 2.7 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet December 2008 Features: • • • • • • • • 15 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power
|
Original
|
PDF
|
MGA-242740-02
64QAM)
16d/e
MGA-242740-02
6 ghz amplifier 10w
3360D
|
|
|
ev 2816
Abstract: MGA 563
Text: MGA-333840-02 3.3 – 3.8 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet December 2008 Features: • • • • • • • • 12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power
|
Original
|
PDF
|
MGA-333840-02
64QAM)
16d/e
MGA-333840-02
ev 2816
MGA 563
|
ev 2816
Abstract: EE802 6 ghz amplifier 10w MGA-333840-02
Text: MGA-333840-02 3.3 – 3.8 GHz 10W High Efficiency Linear Power Amplifier New Product Data Sheet December 2008 Features: • • • • • • • • 12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power
|
Original
|
PDF
|
MGA-333840-02
64QAM)
16d/e
MGA-333840-02
Ba001
ev 2816
EE802
6 ghz amplifier 10w
|
Untitled
Abstract: No abstract text available
Text: MGA-242740-02 2.4 – 2.7 GHz 10W High Efficiency Linear Power Amplifier New Product Data Sheet December 2008 Features: • • • • • • • • 15 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power
|
Original
|
PDF
|
MGA-242740-02
64QAM)
16d/e
MGA-242740-02
|
Untitled
Abstract: No abstract text available
Text: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet November 2008 Features: • 12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power
|
Original
|
PDF
|
MGA-495940-02
64QAM)
16d/e
MGA-495940-02
|
5.8 ghz amplifier 10w
Abstract: No abstract text available
Text: MGA-495940-02 4.9 – 5.9 GHz 10W High Efficiency Linear Power Amplifier Preliminary Data Sheet November 2008 Features: • 12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power
|
Original
|
PDF
|
MGA-495940-02
64QAM)
16d/e
MGA-495940-02
5.8 ghz amplifier 10w
|
Untitled
Abstract: No abstract text available
Text: MGA-333840-02 3.3 – 3.8 GHz 10W High Efficiency Linear Power Amplifier New Product Data Sheet December 2008 Features: • • • • • • • • 12 dB Gain 40 dBm P-3dB 33 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 25% Efficiency at 33 dBm Linear Output Power
|
Original
|
PDF
|
MGA-333840-02
64QAM)
16d/e
MGA-333840-02
|
Untitled
Abstract: No abstract text available
Text: Product Selection Guide Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation, DC - 110 GHz Automotive Telematics & Sensors Broadband Cable Modem, CATV, DBS & VoIP WiMAX, WiBro, WLAN & UWB Cellular Infrastructure GSM, GPRS, CDMA, TD-SCDMA,
|
Original
|
PDF
|
OC-48
SG-1213
|
BA 7891 NG
Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进
|
Original
|
PDF
|
PRF957
TFF1003HN
TFF1007HN
TFF1014HN
TFF1015HN
TFF1017HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
BA 7891 NG
bts 2140 1b
TFF1014
BLF4G08LS-160A
bf1107 spice model
BF862 spice model
RF transceiver 802.11AC
Multiple output LNB
802.11AC
BGU6104
|
6 pin TRANSISTOR SMD CODE CAA
Abstract: TEA6721 BF991 spice model
Text: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、
|
Original
|
PDF
|
|
rf3826
Abstract: SBB-3089 RFHA1000 spf-5189 spf-5189z SUF-9000 SPB-2054S RF2815 SBB-1089 rf3931
Text: 2009 RFMD Aerospace & Defense Product Selection Guide Robust Components for RF, Microwave, and Millimeter Applications Regarded as the partner of choice in the Aerospace, Defense, and Homeland Security industry, RFMD® has earned a global reputation with its product innovation, quality, scalability, and world-class customer support.
|
Original
|
PDF
|
|
