Untitled
Abstract: No abstract text available
Text: n ix Y S HiPerFET Power MOSFET IXFN 170N10 IXFK170N10 VDSS ^D25 100 V 100 V 170 A 170 A p DS on 10 mQ 10 mil Single M O S FE T Die Symbol Test Conditions VDSS v TCB Tj Tj VGS v GSM Continuous Transient Us ® u ® Ur Tc Tc Tc Tc Maximum Ratings IXFK IXFN
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IXFN170N10
IXFK170N10
O-264
OT-227
IXFN170N10
100ms
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diode 47c
Abstract: No abstract text available
Text: VRRM V Types SEMICELL CAL - Diode Chips3 SKCD 47 C 170 I 1700 SKCD 47C 170 I 6,9x6,9 mm; 42 A4); 1700V Absolute Maximum Ratings Symbol Conditions 1) IFSM ≥ 6 bondwires 300 µm ∅) tp = 10 ms; sin; Tj = 150 °C tp = 10 ms; sin; Tj = 150 °C max. 120 s (transfer)
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C/125
diode 47c
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Untitled
Abstract: No abstract text available
Text: VRRM V Types SEMICELL CAL - Diode Chips3 SKCD 61 C 170 I 1700 SKCD 61C 170 I 7,8 x 7,8 mm; 51 A4); 1700 V Absolute Maximum Ratings Symbol Conditions 1) IFSM ≥ 8 bondwires 300 µm ∅) tp = 10 ms; sin; Tj = 150 °C tp = 10 ms; sin; Tj = 150 °C max. 120 s (transfer)
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C/125
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Untitled
Abstract: No abstract text available
Text: SSS3402A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (m ) Max D 60 @VGS = 10V 25V G 3A 80 @VGS = 4.5V S 170 @VGS = 2.5V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S
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SSS3402A
OT-23
OT-23
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Untitled
Abstract: No abstract text available
Text: Analog Power AM3472N N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 170 @ VGS = 10V 185 @ VGS = 5.5V ID(A) 2.9 2.7 Typical Applications:
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AM3472N
AM3472N
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Untitled
Abstract: No abstract text available
Text: Analog Power AM4528C P & N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 28 @ VGS = 4.5V 30 18 @ VGS = 10V 250 @ VGS = -2.5V -20 170 @ VGS = -4.5V These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures
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AM4528C
DS-AM4528
AM4528C-T1-XX
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Untitled
Abstract: No abstract text available
Text: Analog Power AM90P20-170B P-Channel 200-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -200 PRODUCT SUMMARY rDS(on) (mΩ) 170 @ VGS = -10V 200 @ VGS = -5.5V ID (A) -34 -32 Typical Applications:
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AM90P20-170B
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384B
Abstract: No abstract text available
Text: SiE802DF New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a Silicon Limit Package Limit 0.0022 @ VGS = 10 V 188 60 0.0027 @ VGS = 4.5 V 170 60 rDS(on) (W)e VDS (V) 30 Qg (Typ) 50 nC Package Drawing APPLICATIONS PolarPAK
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SiE802DF
S-51202--Rev.
20-Jun-05
384B
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2SK2153
Abstract: 2SJ332S
Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^
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2SJ381
2SJ382
2SJ383
2SJ419
2SJ42Q
2SK2316
2SK2317
2SK2318
2SK2440
2SK2441
2SK2153
2SJ332S
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SSS2209
Abstract: sot-23 P-Channel MOSFET
Text: SSS2209 P-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 170 @VGS = -4.5V -2.0A -20V G 240 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.
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SSS2209
OT-23
OT-23
SSS2209
sot-23 P-Channel MOSFET
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Untitled
Abstract: No abstract text available
Text: nixY S VUM 24-05 Power MOSFET Stage for Boost Converters ^D25 V Dss ^D S o n Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 T ype I v DSS V DGR V GS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 k fì Continuous A A A 170 W
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2SJ131
Abstract: No abstract text available
Text: 2SJ131 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)170 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)
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2SJ131
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VTM48EF040T050A00
Abstract: VTM48ET040T050A00 vtm48et D496 D505 VTM48EF040M050A00
Text: VTM48EF040T050A00 VTM48ET040T050A00 VTM Transformer TM S C US C FEATURES • 48 Vdc to 4 Vdc 50 A transformer - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency >94% reduces system power consumption • High density (170 A/in3)
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VTM48EF040T050A00
VTM48ET040T050A00
VTM48EF040T050A00
VTM48ET040T050A00
vtm48et
D496
D505
VTM48EF040M050A00
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IRFHS9351
Abstract: st 9351
Text: PD - 97572A IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) TOP VIEW S 1 6 D S2 D d A G 2 D 3 G2 D2 5 G D D1 4 S D1 D2 S1 G1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application
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7572A
IRFHS9351PbF
IRFHS9351TRPBF
IRFHS9351TR2PBF
J-STD-020D
IRFHS9351
st 9351
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Untitled
Abstract: No abstract text available
Text: TAIWAN SEMICONDUCTOR s TSM3455 30V P-Channel MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 170 @ VGS= -4.5V -2.7 -30 1 23 Features
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TSM3455
3455C
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Untitled
Abstract: No abstract text available
Text: VIV0104THJ S C NRTL US VTM DC to DC Voltage Transformation TM FEATURES • 40 Vdc – 3.3 Vdc 25 A Voltage Transformation Module - Operating from standard 48 V or 24 V PRMs • High efficiency >93% reduces system power consumption • High density (170 A/in3)
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VIV0104THJ
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Siliconix 511
Abstract: No abstract text available
Text: SÌ3831DV Vishay Siliconix Bi-Directional P-Ch MOSFET/Power Switch New Product V B* V > Ros (o n (&) ±7 Id W 0 .170 VGg = -4 .5 V ±2.4 0.240 @ VGS = “ 2-5 V ±2,0 & FEATURES • • • • Low rps(on) Symmetrical P-Channel MOSFET Integrated Body Bias For Bi-Directional Blocking
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3831DV
988-B000
S-56944--
23-Nov-98
Siliconix 511
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22-A114F
Abstract: C-1024
Text: VTM48 E x 040 y 050A00 VTM Current Multiplier TM S C US C FEATURES • 48 Vdc to 4 Vdc 50 A current multiplier - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency >94% reduces system power consumption • High density (170 A/in3)
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VTM48
050A00
22-A114F
C-1024
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ZVN3320F
Abstract: ZVN3320
Text: SELECTION TABLES TABLE 4: SOT-23 MOSFETS 'SOTFETS' Part number B V Dss Idm at Max. V mA A Min. Pd ^D SIon l V GSIthl J mA ft a Max. V GS mA V W Package marking N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 MU B S S1 2 3 100 170 0.68 0.8 2.8 1 6 100 10 360
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OT-23
ZVN3320F
ZVN3310F
ZVN4106F
ZVN3306F
2N7002
VN10LF
BS170F
BSS13
ZVP1320F
ZVN3320
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ZVN4206E
Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
Text: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA
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OT-23
ZVN3320F
BSS123
ZVN3310F
ZVN4106F
ZVN3306F
2N7002
VN10LF
BS170F
BSS138+
ZVN4206E
bss123 marking sa
B55123
BSS138
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MOTOR-ENCODER
Abstract: DC MOTOR 48V 500W analog servo controller for bldc 12v 10A dc motor mosfet driver bldc servo ramp generator encoder 12v 10A dc driver motor control mosfet brushless motor control 48v bldc motor for 48v servo motor
Text: MODULES F O R B L D C M O T O R S M O D U LES TMCM- 1 70 1-Ax is M otor Mou nted BL DC S ervo Co ntro ller / D rive r wi th E ncod er I nf. 10 A / 48V 1 0 mm M A IN CH A R AC T ER IS T IC S INFO The TMCM-170 is a controller / driver module for high performance servo drives based on brushless DC motors. It gives a
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TMCM-170
50ble
TMCM-170
TMCM-170-CABLE
RS232
RS485
MOTOR-ENCODER
DC MOTOR 48V 500W
analog servo controller for bldc
12v 10A dc motor mosfet driver
bldc servo
ramp generator encoder
12v 10A dc driver motor control mosfet
brushless motor control 48v
bldc motor for 48v
servo motor
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bldc servo
Abstract: bldc encoder 12v brushless motor driver ac servo motor encoder ac servo motor position control TMCM-170 OPTICAL ENCODER with stepper motor analog servo controller for bldc bldc motor for 48v drive motor 10A with transistor regulator 48V
Text: MECHATRO N I C D R I V E S W I T H B L D C M O T O R P A Nd r i ves PD- 1 70 - 5 7 57mm dia mete r BLDC Enc oder Mot or w ith Cont roll er / Dri ver and Ser ial Inte rfac e 1 0 mm M A IN CH A R AC T ER IS T IC S INFO The PD-170-57 is a full mechatronic solution including a 57 mm
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PD-170-57
TMCM-170)
RS232,
RS485
PD-170-57
PD4-170-57-E
QBL5704-94-04-032
PD5-170-57-E
QBL5704-116-04-042
bldc servo
bldc encoder 12v brushless motor driver
ac servo motor encoder
ac servo motor position control
TMCM-170
OPTICAL ENCODER with stepper motor
analog servo controller for bldc
bldc motor for 48v
drive motor 10A with transistor
regulator 48V
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Untitled
Abstract: No abstract text available
Text: Semiconductor, Inc. TC170 CMOS CURRENT-MODE PWM CONTROLLER FEATURES GENERAL DESCRIPTION • T he TC 170 brings low -pow er C M O S te ch no lo g y to the cu rrent-m ode-sw itching p o w e r su pply co n tro lle r m arket. M axim um su p p ly current is 3.8 mA. B ipolar current-m ode
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TC170
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BSM 225
Abstract: igbt module bsm 300 igbt module bsm 200 DLC 111 BSM204A BSM 204-A
Text: IGBT Standard Modules / IGBT Standard Module Mosfet Modules / Mosfet Module < Type o< m c o n tin u e d / F o rts e tz u n g lc A R lh JC P toi K /W w V cEsat o u tlin e Type V V ds Id V A < RdS oh ou tlin e m Q < 1700V-Types 3-Phase-Full-Bridges Single Switches
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700V-Types
3x100
3x150
--j44eupec
BSM 225
igbt module bsm 300
igbt module bsm 200
DLC 111
BSM204A
BSM 204-A
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