Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    S 170 MOSFET Search Results

    S 170 MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    S 170 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode 47c

    Abstract: No abstract text available
    Text: VRRM V Types SEMICELL CAL - Diode Chips3 SKCD 47 C 170 I 1700 SKCD 47C 170 I 6,9x6,9 mm; 42 A4); 1700V Absolute Maximum Ratings Symbol Conditions 1) IFSM ≥ 6 bondwires 300 µm ∅) tp = 10 ms; sin; Tj = 150 °C tp = 10 ms; sin; Tj = 150 °C max. 120 s (transfer)


    Original     		PDF C/125 diode 47c

    Untitled

    Abstract: No abstract text available
    Text: VRRM V Types SEMICELL CAL - Diode Chips3 SKCD 61 C 170 I 1700 SKCD 61C 170 I 7,8 x 7,8 mm; 51 A4); 1700 V Absolute Maximum Ratings Symbol Conditions 1) IFSM ≥ 8 bondwires 300 µm ∅) tp = 10 ms; sin; Tj = 150 °C tp = 10 ms; sin; Tj = 150 °C max. 120 s (transfer)


    Original     		PDF C/125

    Untitled

    Abstract: No abstract text available
    Text: SSS3402A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) (m ) Max D 60 @VGS = 10V 25V G 3A 80 @VGS = 4.5V S 170 @VGS = 2.5V D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. S


    Original     		PDF SSS3402A OT-23 OT-23

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM3472N N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 170 @ VGS = 10V 185 @ VGS = 5.5V ID(A) 2.9 2.7 Typical Applications:


    Original     		PDF AM3472N AM3472N

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM4528C P & N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 28 @ VGS = 4.5V 30 18 @ VGS = 10V 250 @ VGS = -2.5V -20 170 @ VGS = -4.5V These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures


    Original     		PDF AM4528C DS-AM4528 AM4528C-T1-XX

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM90P20-170B P-Channel 200-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -200 PRODUCT SUMMARY rDS(on) (mΩ) 170 @ VGS = -10V 200 @ VGS = -5.5V ID (A) -34 -32 Typical Applications:


    Original     		PDF AM90P20-170B

    384B

    Abstract: No abstract text available
    Text: SiE802DF New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a Silicon Limit Package Limit 0.0022 @ VGS = 10 V 188 60 0.0027 @ VGS = 4.5 V 170 60 rDS(on) (W)e VDS (V) 30 Qg (Typ) 50 nC Package Drawing APPLICATIONS PolarPAK


    Original     		PDF SiE802DF S-51202--Rev. 20-Jun-05 384B

    SSS2209

    Abstract: sot-23 P-Channel MOSFET
    Text: SSS2209 P-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-23 RDS(ON) (mΩ) Max ID (A) D 170 @VGS = -4.5V -2.0A -20V G 240 @VGS = -2.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package.


    Original     		PDF SSS2209 OT-23 OT-23 SSS2209 sot-23 P-Channel MOSFET

    2SJ131

    Abstract: No abstract text available
    Text: 2SJ131 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)170 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)


    Original     		PDF 2SJ131

    VTM48EF040T050A00

    Abstract: VTM48ET040T050A00 vtm48et D496 D505 VTM48EF040M050A00
    Text: VTM48EF040T050A00 VTM48ET040T050A00 VTM Transformer TM S C US C FEATURES • 48 Vdc to 4 Vdc 50 A transformer - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency >94% reduces system power consumption • High density (170 A/in3)


    Original     		PDF VTM48EF040T050A00 VTM48ET040T050A00 VTM48EF040T050A00 VTM48ET040T050A00 vtm48et D496 D505 VTM48EF040M050A00

    IRFHS9351

    Abstract: st 9351
    Text: PD - 97572A IRFHS9351PbF HEXFET Power MOSFET VDS VGS max -30 ±20 V V RDS on max 170 mΩ (@VGS = -10V) ID -3.4 (@TC = 25°C) TOP VIEW S 1 6 D S2 D d A G 2 D 3 G2 D2 5 G D D1 4 S D1 D2 S1 G1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application


    Original     		PDF 7572A IRFHS9351PbF IRFHS9351TRPBF IRFHS9351TR2PBF J-STD-020D IRFHS9351 st 9351

    Untitled

    Abstract: No abstract text available
    Text: VIV0104THJ S C NRTL US VTM DC to DC Voltage Transformation TM FEATURES • 40 Vdc – 3.3 Vdc 25 A Voltage Transformation Module - Operating from standard 48 V or 24 V PRMs • High efficiency >93% reduces system power consumption • High density (170 A/in3)


    Original     		PDF VIV0104THJ

    22-A114F

    Abstract: C-1024
    Text: VTM48 E x 040 y 050A00 VTM Current Multiplier TM S C US C FEATURES • 48 Vdc to 4 Vdc 50 A current multiplier - Operating from standard 48 V or 24 V PRMTM regulators • High efficiency >94% reduces system power consumption • High density (170 A/in3)


    Original     		PDF VTM48 050A00 22-A114F C-1024

    MOTOR-ENCODER

    Abstract: DC MOTOR 48V 500W analog servo controller for bldc 12v 10A dc motor mosfet driver bldc servo ramp generator encoder 12v 10A dc driver motor control mosfet brushless motor control 48v bldc motor for 48v servo motor
    Text: MODULES F O R B L D C M O T O R S M O D U LES TMCM- 1 70 1-Ax is M otor Mou nted BL DC S ervo Co ntro ller / D rive r wi th E ncod er I nf. 10 A / 48V 1 0 mm M A IN CH A R AC T ER IS T IC S INFO The TMCM-170 is a controller / driver module for high performance servo drives based on brushless DC motors. It gives a


    Original     		PDF TMCM-170 50ble TMCM-170 TMCM-170-CABLE RS232 RS485 MOTOR-ENCODER DC MOTOR 48V 500W analog servo controller for bldc 12v 10A dc motor mosfet driver bldc servo ramp generator encoder 12v 10A dc driver motor control mosfet brushless motor control 48v bldc motor for 48v servo motor

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S HiPerFET Power MOSFET IXFN 170N10 IXFK170N10 VDSS ^D25 100 V 100 V 170 A 170 A p DS on 10 mQ 10 mil Single M O S FE T Die Symbol Test Conditions VDSS v TCB Tj Tj VGS v GSM Continuous Transient Us ® u ® Ur Tc Tc Tc Tc Maximum Ratings IXFK IXFN


    OCR Scan     		PDF IXFN170N10 IXFK170N10 O-264 OT-227 IXFN170N10 100ms

    2SK2153

    Abstract: 2SJ332S
    Text: • Device Lineup ♦ 2.5V-Drive Power MOSFETs Absolute maximum ratings Ta = 25DC Type No, Package 2SJ381 PCP 2SJ382 TP-FA 2SJ383 2SJ419 2SK2317 2SK2318 FW201 ±10 2 ±12 r r rD (W) lytsi typ Ciss typ (S) (pF) 3.5 400/700 280/400 2.4 170 240/380 155/220 ^


    OCR Scan     		PDF 2SJ381 2SJ382 2SJ383 2SJ419 2SJ42Q 2SK2316 2SK2317 2SK2318 2SK2440 2SK2441 2SK2153 2SJ332S

    Untitled

    Abstract: No abstract text available
    Text: nixY S VUM 24-05 Power MOSFET Stage for Boost Converters ^D25 V Dss ^D S o n Module for Power Factor Correction V RRM (Diode) V DSS V V 600 500 5 T ype I v DSS V DGR V GS TVJ = 25°C to 150°C TVJ = 25°C to 150°C; RGS = 10 k fì Continuous A A A 170 W


    OCR Scan     		PDF

    bf170

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M B F 170 Advance Inform ation S m all-S ig n al Field E ffe c t T ra n sis to r N -Channel Enhancem ent-M ode S ilic o n G ate T M O S N -C H A N N E L S M A L L -S IG N A L T M O S FET rD S o n = 5 O H M S 60 V O L T S


    OCR Scan     		PDF -236A bf170

    Untitled

    Abstract: No abstract text available
    Text: TAIWAN SEMICONDUCTOR s TSM3455 30V P-Channel MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 170 @ VGS= -4.5V -2.7 -30 1 23 Features


    OCR Scan     		PDF TSM3455 3455C

    Siliconix 511

    Abstract: No abstract text available
    Text: SÌ3831DV Vishay Siliconix Bi-Directional P-Ch MOSFET/Power Switch New Product V B* V > Ros (o n (&) ±7 Id W 0 .170 VGg = -4 .5 V ±2.4 0.240 @ VGS = “ 2-5 V ±2,0 & FEATURES • • • • Low rps(on) Symmetrical P-Channel MOSFET Integrated Body Bias For Bi-Directional Blocking


    OCR Scan     		PDF 3831DV 988-B000 S-56944-- 23-Nov-98 Siliconix 511

    ZVN3320F

    Abstract: ZVN3320
    Text: SELECTION TABLES TABLE 4: SOT-23 MOSFETS 'SOTFETS' Part number B V Dss Idm at Max. V mA A Min. Pd ^D SIon l V GSIthl J mA ft a Max. V GS mA V W Package marking N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 MU B S S1 2 3 100 170 0.68 0.8 2.8 1 6 100 10 360


    OCR Scan     		PDF OT-23 ZVN3320F ZVN3310F ZVN4106F ZVN3306F 2N7002 VN10LF BS170F BSS13 ZVP1320F ZVN3320

    ZVN4206E

    Abstract: bss123 marking sa B55123 2N7002 BS170F BSS123 BSS138 VN10LF ZVN3306F ZVN3310F
    Text: SELECTION TABLES B V dss Id V mA at Id Max. mA Min. Pd ^D S on V GS(thl / > Part number 1 TABLE 4: SOT-23 MOSFETS 'SOTFETS' S2 Max. Id mA V qs V Package marking w N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 BSS123 100 170 0.68 0.8 2.8 1 6 100 10 360 SA


    OCR Scan     		PDF OT-23 ZVN3320F BSS123 ZVN3310F ZVN4106F ZVN3306F 2N7002 VN10LF BS170F BSS138+ ZVN4206E bss123 marking sa B55123 BSS138

    Untitled

    Abstract: No abstract text available
    Text: Semiconductor, Inc. TC170 CMOS CURRENT-MODE PWM CONTROLLER FEATURES GENERAL DESCRIPTION • T he TC 170 brings low -pow er C M O S te ch no lo g y to the cu rrent-m ode-sw itching p o w e r su pply co n tro lle r m arket. M axim um su p p ly current is 3.8 mA. B ipolar current-m ode


    OCR Scan     		PDF TC170

    BSM 225

    Abstract: igbt module bsm 300 igbt module bsm 200 DLC 111 BSM204A BSM 204-A
    Text: IGBT Standard Modules / IGBT Standard Module Mosfet Modules / Mosfet Module < Type o< m c o n tin u e d / F o rts e tz u n g lc A R lh JC P toi K /W w V cEsat o u tlin e Type V V ds Id V A < RdS oh ou tlin e m Q < 1700V-Types 3-Phase-Full-Bridges Single Switches


    OCR Scan     		PDF 700V-Types 3x100 3x150 --j44eupec BSM 225 igbt module bsm 300 igbt module bsm 200 DLC 111 BSM204A BSM 204-A