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    RZ2833B15W Search Results

    RZ2833B15W Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RZ2833B15W Philips Semiconductors Microwave Power Transistor Original PDF

    RZ2833B15W Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: N ANER PHILIPS/DISCRETE DbE D tab53^31 0015243 S RZ2833B15W r - 33-/3 MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base ciass-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.


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    PDF tab53 RZ2833B15W

    RZ2833B15W

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE Oh E D UÈ t a b 's T ^ l X 0D1SE43 S • “ T - 33-13 MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier, operating in the 2.8 to 3.3 GHz frequency range.


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    PDF 0015E43 RZ2833B15W T-33-13 RZ2833B15W

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


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    PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11