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Abstract: No abstract text available
Text: CPEC RX60N10 RX60N10 Silicon N Channel Power MOSFET Description The RX60N10 is n-channel enhancement mode Trench power MOSFET with fast switching speed , low on-resistance. usually used at power switching application . It is also intended for any applications
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RX60N10
RX60N10
5TO-220
6RX60N10
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ISD 3000
Abstract: chengdu
Text: CPEC RX60N06 RX60N06 Silicon N Channel Power MOSFET Description The RX60N06 is n-channel enhancement mode trench power MOSFET with fast switching speed , low on-resistance. usually used at power switching application . Features •VDSS =60V ·ID =60A ·RDS on <7mΩ (VGS=10V)
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Original
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RX60N06
RX60N06
6TO-220
ISD 3000
chengdu
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PDF
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