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    RTE DIOD Search Results

    RTE DIOD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    RTE DIOD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RTAX2000

    Abstract: UT16AD80P m38510/55501 UT63M143 MIP7965-750B1 5962-8869203 vhdl code manchester encoder UT54LVDM055LV SMD custom precision rESISTOR network h009 SPECIFICATION
    Text: A passion for performance. Aeroflex Colorado Springs Aeroflex Gaisler Aeroflex Plainview Product Short Form Microelectronic Solutions October 2010 HiRel from Aeroflex Colorado Springs UT69151 SµMMIT DXE • UT69151 SµMMIT™ XTE ■ UT69151 SµMMIT™ RTE


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    PDF UT691 RTAX2000 UT16AD80P m38510/55501 UT63M143 MIP7965-750B1 5962-8869203 vhdl code manchester encoder UT54LVDM055LV SMD custom precision rESISTOR network h009 SPECIFICATION

    step recovery diodes

    Abstract: step recovery
    Text: POWER GENERATION DIODES Step recovery d io d e s . .40 Multiplier va ra cto rs . .41 Up co nve rte r v a ra c to rs . .42


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    Amp. mosfet 1000 watt

    Abstract: Amp. mosfet 800 watt scr ZO 405 1000 watt power supply scheme 156 20k Tantalum Capacitor 180 watt lamp planar 230 volt ac overvoltage protection Amp. mosfet 500 watt Measurement Concepts Probe Measurements plji
    Text: Table of Contents Features of SMQ C o n v e rte rs .1 Model Selection C ha Operational Ratings & Characteristics . 2


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    PDF 2V/20A L2/93 Amp. mosfet 1000 watt Amp. mosfet 800 watt scr ZO 405 1000 watt power supply scheme 156 20k Tantalum Capacitor 180 watt lamp planar 230 volt ac overvoltage protection Amp. mosfet 500 watt Measurement Concepts Probe Measurements plji

    Untitled

    Abstract: No abstract text available
    Text: SÌ786 - SNicönix Dual-Output Power-Supply Controller F EATURES • F ixe d 5 -V a n d 3 .3 -V S te p -d o w n C o n v e rte rs • L e ss th a n 5 00 -fi.A Q u ie s c e n t C u rre n t p e r C o n v e rte r


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    PDF Si786 MAX786 S-60357-- ov-98

    7 segment led display SIEMENS

    Abstract: MAX138CPL L7106
    Text: 19-0805; Rev 1; 12/94 y n y j x i y i / i 3V2 D ig it A /D C o n v e rte rs w ith B an d g ap R e fe re n c e a n d C h arg e -P u m p V o lta g e C o n v e rte r _F e a tu r e s ♦ Single Supply +2.5V to +7,0V Operation MAX 140 is a low segm ent-current version of the MAX 139


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    PDF 138/MAX MAX138) MAX139) MAX138/MAX139 MAX138/M ICL7136 ICL7137 7 segment led display SIEMENS MAX138CPL L7106

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR A pplication Specific Intelligent Power Module> PS11033 *o& FLAT-BASE TYPE INSULATED TYPE soff,e PS11033 INTEGRATED FUNCTIONS AND FEATURES • C o n v e rte r brid g e fo r 3 p h a se A C -to -D C p o w e r co nve rsio n. • 3 p h a s e IG B T in v e rte r b rid g e c o n fig u re d b y th e la te s t 3rd.


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    PDF PS11033 60sec) kW/200V

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module> PS11032 «o& FLAT-BASE TYPE INSULATED TYPE soff,e PS11032 INTEGRATED FUNCTIONS AND FEATURES • C o n v e rte r brid g e fo r 3 p h a se A C -to -D C p o w e r co nve rsio n. • 3 p h a s e IG B T in v e rte r b rid g e c o n fig u re d b y th e la te s t 3rd.


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    PDF PS11032 60sec) kW/200V

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR A pplication Specific Intelligent Power Module> PS11035 *o& FLAT-BASE TYPE INSULATED TYPE soff,e PS11035 INTEGRATED FUNCTIONS AND FEATURES • C o n v e rte r brid g e fo r 3 p h a se A C -to -D C p o w e r co nve rsio n. • 3 p h a s e IG B T in v e rte r b rid g e c o n fig u re d b y th e la te s t 3rd.


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    PDF PS11035 60sec) kW/200V

    BSM30GP60 INVERTER CIRCUIT

    Abstract: BSM30GP60
    Text: eupec Technische Inform ation / Technical Inform ation ! g BSM30GP60 : s vorläufige Daten preliminary data Elektrische Eigenschaften / Electrical properties H ö c h s tzu lä s s ig e W e rte / M axim u m rated valu e s Diode Gleichrichter/ Diode Rectifier


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    PDF BSM30GP60 BSM30GP60 INVERTER CIRCUIT BSM30GP60

    ALS04

    Abstract: HD74ALS04 1S2074 HD74ALS05 CT50P
    Text: H D 74A L S 04 H D 74A L S 05 # H e x In v e rte rs • H e x In v e rte rs w ith open c o lle c to r o u tp u ts • C I R C U I T S C H E M A T IC S ( 1 / 6 ) B P IN A R R A N G E M E N T 14 I Vcc Ti~| 64 T T | 6Y ~7ï~j ~?0~| 5Y 9 I .A « I4Y (Top View)


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    PDF HD74ALS04 HD74ALS05 oh--400M ALS04 Ct-15pF Bi-500nCALS04) CALS05) HD74ALS04 1S2074 HD74ALS05 CT50P

    AN 7145 M circuit power amplifier

    Abstract: LF400 MAX163 MAX183 MAX183ACNG MAX183BCNG MAX184 MAX185 10nf electrolytic capacitor IS51V
    Text: yi/iyjxjyi/i 19-3127: Rev.O; 4/91 H ig h -S p e e d 1 2 -B it A /D C o n v e rte rs W ith E x te r n a l R e fe r e n c e In p u t T h e M A X 1 8 3 /1 8 4 /1 8 5 a r e 1 2 - b it, h ig h - s p e e d , B iC M O S , a n a lo g - to -d ig ita l c o n v e rte rs A D C s th a t


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    PDF 12-Bit MAX183/1 12-bit, MAX183 MAX185 MAX183/184/185 MAX185BC/D MAX185AENG MAX185BENG MAX185AEWG AN 7145 M circuit power amplifier LF400 MAX163 MAX183ACNG MAX183BCNG MAX184 10nf electrolytic capacitor IS51V

    MAX644ESD

    Abstract: No abstract text available
    Text: L o w V o lta g e S te p -U p C o n v e rte rs Features G eneral Description M inim um s ta rtu p v o lta g e is 1.15V, b u t o n c e s ta rte d the d e v ic e w ill o p e ra te to low er v o lta g e s as th e b a tte ry d is ­ ch a rg e s . A s e p a ra te low b a tte ry m o n ito r is a v a ila b le ; it


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    PDF MAX646 MAX644ESD

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MUR420/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Power R ectifiers MUR420 MUR460 . . . designed for use in sw itch in g pow er supplies, in ve rte rs and as free wheeling diodes, these s ta te -o f-th e -a rt devices have the following features:


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    PDF MUR420/D cas59 MUR420 MUR460

    U1620

    Abstract: u1640 U1620 RG u1640 diode motorola u1620 diode MOTOROLA U1640 u1660 diode motorola u1620 U-1640 ur1660
    Text: MOTOROLA Order this document by MUR1620CT/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Power R ectifiers MUR1620CT MUR1640CT MUR1660CT . . . designed for use in sw itch in g pow er supplies, in ve rte rs and as free wheeling diodes, these s ta te -o f-th e -a rt devices have the following features:


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    PDF MUR1620CT/D MUR1620CT MUR1640CT MUR1660CT U1620 u1640 U1620 RG u1640 diode motorola u1620 diode MOTOROLA U1640 u1660 diode motorola u1620 U-1640 ur1660

    Package Marking I60

    Abstract: MURI60
    Text: MOTOROLA Order this document by MUR120/D SEMICONDUCTOR TECHNICAL DATA SW ITCH MODE Power R ectifiers M UR120 MUR 140 M UR160 . . . designed for use in sw itch in g pow er supplies, in ve rte rs and as free wheeling diodes, these s ta te -o f-th e -a rt devices have the following features:


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    PDF MUR120/D UR120 UR160 DO-41 Package Marking I60 MURI60

    Untitled

    Abstract: No abstract text available
    Text: J V MP \ Æ X \ j y \ tib le 8 B it A / D C o n v e rte r -Features ♦ Improved Second Source MAX160 ♦ Fast Conversion Time: 4/xs (MAX160) 1 5 /iS (MX7574) 4 No Missing Codes Over Temperature + Single +5V Supply


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    PDF MAX160) MX7574) MAX160 MX7574

    UA08A

    Abstract: LM2560 2661M LM2661M a08a
    Text: Semiconductor LM2660/LM2661 Switched Capacitor Voltage Converter General Description Features The LM2660/LM 2661 C M OS charge-pum p voltage con­ ve rte r inverts a positive voltage in the range of 1.5V to 5.5V to th e corresponding negative voltage. The LM2660/LM2661


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    PDF LM2660/LM2661 LM2660/LM fr0-272-9959 UA08A LM2560 2661M LM2661M a08a

    Untitled

    Abstract: No abstract text available
    Text: TP2635 TP2640 S u p e rte x inc. Low Thresh old Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R ds on BVdgs (max) (max) -350V 15Q -2.0V -400V 15Q -2.0V Order Number / Package !f b v dss / SO-8 TO-92 DICE* 0.7A TP2635LG TP2635N3


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    PDF TP2635 TP2640 TP2635LG TP2640LG -350V -400V TP2635N3 TP2640N3 TP2635ND TP2640ND

    1N414R

    Abstract: MAX183 MAX183ACNG MAX183ACWG MAX183BCNG MAX183BCWG MAX184 MAX185 IN014 LS 1316
    Text: 19-3127; Rev.O; 4/91 H ig h -S p e e d 1 2 -B it A /D C o n v e rte rs W ith E x te rn a l R e fe re n c e In p u t _ F e a tu re s T h e M A X 1 8 3 /1 8 4 /1 8 5 a r e 1 2 - b i t , h i g h - s p e e d , B iC M O S , a n a lo g - to - d ig ita l c o n v e rte rs A D C s th a t


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    PDF 12-Bit MAX183/1 12-bit, MAX183 85AEWG MAX185BFWG MAX185AMRG MAX185BMRG -S1D-883 1N414R MAX183ACNG MAX183ACWG MAX183BCNG MAX183BCWG MAX184 MAX185 IN014 LS 1316

    duracell dl123a

    Abstract: MAX655CPD DL123A IRF520 equivalent MAX655 1N5817 IRF520 IRF530 L001 MAXL001
    Text: yuyjxiyi/i L o w -V o lta g e S te p -U p DC-DC C o n v e rte r P o w e r-S u p p ly E v a lu a tio n K it The M AX655 EVKIT E va lu a tio n Kit d e m o n s tra te s the p e rfo rm a n c e of th e M AX655 +3V to +5V D C -D C c o n v e rte r in a s ta n d a rd a p p lic a tio n c irc u it F ig u re 1 .


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    PDF MAX655 MAX655 300mW MAXL001 duracell dl123a MAX655CPD DL123A IRF520 equivalent 1N5817 IRF520 IRF530 L001

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MUR3040/D SEMICONDUCTOR TECHNICAL DATA S W IT C H MODE P o w e r R e c tifie r MUR3040 . . . designed for use in sw itch in g pow er supplies, in ve rte rs and as free wheeling diodes, these s ta te -o f-th e -a rt devices have the following features:


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    PDF MUR3040/D MUR3040 340E-02

    29C828

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am29C827A/A rn29C828A High-Performance CMOS Bus Buffers DISTINCTIVE CHARACTERISTICS • High-speed CMOS buffers a r d in ve rte rs - D-Y delay = 4 ns typical ■ Low standby power ■ JEDEC FCT-compatible spec s ■ Power-up/down disable circuit provides for


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    PDF Am29C827A/A rn29C828A 10-bit) 200-mV Am29C828A 29C827A/Am29C828A 29C828

    Untitled

    Abstract: No abstract text available
    Text: fà k S u p e rte x AP0116 AP0132 AP0120 AP0140 AP0130 in c . 8-Channel MOSFET Array Monolithic P-Channel Enchancement Mode Ordering Information _ Order Number / Package BVqgs min 11 BVDS9/ ^DS(O N) (max) loss* VDS= -100V Max loss* ® Vos -2S0V Max


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    PDF AP0116 AP0132 AP0120 AP0140 AP0130 -100V 18-Lead SOW-20* -160V -15mA

    Untitled

    Abstract: No abstract text available
    Text: TP2535 TP2540 S u p e rte x In c ._ Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BVDSS / ^ D S O N ^ G S (th ) ^D(ON) b v dgs (max) (max) (min) TO-92 TO-243AA* Diet -350V 25ß


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    PDF TP2535 TP2540 O-243AA* -350V TP2535N3 -400V TP2540N3 TP2540N8 TP2540ND 125pF