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    RSR025N Price and Stock

    ROHM Semiconductor RSR025N05TL

    NCH 45V 2.5A SMALL SIGNAL MOSFET
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    DigiKey RSR025N05TL Digi-Reel 5,583 1
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    ROHM Semiconductor RSR025N05HZGTL

    MOSFET N-CH 45V 2.5A TSMT3
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    ROHM Semiconductor RSR025N03HZGTL

    MOSFET N-CH 30V 2.5A TSMT3
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    DigiKey RSR025N03HZGTL Digi-Reel 2,082 1
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    ROHM Semiconductor RSR025N03TL

    MOSFET N-CH 30V 2.5A TSMT3
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    DigiKey RSR025N03TL Digi-Reel 946 1
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    ROHM Semiconductor RSR025N03FRATL

    Mosfet, Aec-Q101, N-Ch, 30V, 2.5A, Tsmt3; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.05Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Rohs Compliant: Yes |Rohm RSR025N03FRATL
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    Newark RSR025N03FRATL Cut Tape 5,477 1
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    RSR025N Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RSR025N03 ROHM FET Transistor, Silicon N-Channel Switching, 30V, 2.5A Original PDF
    RSR025N03 ROHM Switching (30V, 2.5A) Original PDF
    RSR025N03TL ROHM TRANS MOSFET N-CH 30V 2.5A 3TSMT3 T/R Original PDF
    RSR025N03TR ROHM TRANS MOSFET N-CH 30V 2.5A 3TSMT3 T/R Original PDF

    RSR025N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RSR025N03

    Abstract: No abstract text available
    Text: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 zExternal dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .


    Original     		RSR025N03 RSR025N03 PDF

    Untitled

    Abstract: No abstract text available
    Text: RSR025N05FRA Nch 45V 2.5A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS 45V RDS on (Max.) 100mW ID 2.5A PD 1.0W TSMT3 (3) (1) (2) lInner circuit lFeatures 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).


    Original     		RSR025N05FRA AEC-Q101 100mW R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: RSR025N05 Nch 45V 2.5A Power MOSFET Datasheet lOutline VDSS 45V RDS on (Max.) 100mW ID 2.5A PD 1.0W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).


    Original     		RSR025N05 100mW R1120A PDF

    RSR025N03

    Abstract: RG-107
    Text: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 zExternal dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .


    Original     		RSR025N03 RSR025N03 RG-107 PDF

    Untitled

    Abstract: No abstract text available
    Text: RSR025N05 Datasheet Nch 45V 2.5A Power MOSFET lOutline VDSS 45V RDS on (Max.) 100mW ID 2.5A PD 1.0W lFeatures TSMT3 (3) (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3).


    Original     		RSR025N05 100mW R1120A PDF

    Untitled

    Abstract: No abstract text available
    Text: RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) .


    Original     		RSR025N03 RSR025N03 PDF

    Untitled

    Abstract: No abstract text available
    Text: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 !External dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 !Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .


    Original     		RSR025N03 PDF

    diode

    Abstract: RSR025N03 means 125 diode Z diode RSR025N03 RG107
    Text: RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) .


    Original     		RSR025N03 diode RSR025N03 means 125 diode Z diode RSR025N03 RG107 PDF

    Untitled

    Abstract: No abstract text available
    Text: RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions Unit : mm Structure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT3) .


    Original     		RSR025N03 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 4V Drive Nch MOSFET RSR025N05  Dimensions Unit : mm Structure Silicon N-channel MOSFET TSMT3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. (3) (1) (2) Application


    Original     		RSR025N05 RSR025N05 R1120A PDF

    RSR025N03

    Abstract: No abstract text available
    Text: RSR025N03 Transistors Switching 30V, 2.5A RSR025N03 zExternal dimensions (Unit : mm) TSMT3 1.0MAX. 2.9±0.1 0.85±0.1 0.7±0.1 0.4 +0.1 −0.05 0.3~0.6 zFeatures 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3) .


    Original     		RSR025N03 RSR025N03 PDF

    Untitled

    Abstract: No abstract text available
    Text: RSR025N03FRA RSR025N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RSR025N03FRA RSR025N03 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) 1.6 2.8 (2) (1) 0.95 0.95 0.16 1.9 (1) Gate (2) Source


    Original     		RSR025N03FRA RSR025N03 AEC-Q101 PDF

    RSR025N03

    Abstract: No abstract text available
    Text: SPICE PARAMETER RSR025N03 by ROHM TR Div. * RSR025N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RSR025N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6


    Original     		RSR025N03 RSR025N03 0000E-6 722E-6 000E-3 478E-3 0000E6 34E-12 PDF

    RSD130P10

    Abstract: rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND
    Text: 2010 ѻકⳂᔩ Discrete Semiconductors MOSFET MOSFET ᦤկ㛑໳ᑨ⫼Ѣᑓ⊯乚ඳⱘPower MOSFETˈҢ⫼Ѣ֓ᨎ䆒໛ⱘǃ 䞛⫼њ㊒ᆚᎹᑣⱘ䍙Ԣᇐ䗮⬉䰏䚼ӊˈࠄ⫼Ѣᓔ݇⬉⑤ⱘǃ催ᬜ⥛ 㗤催य़䚼ӊˈϔᑨ‫ܼׅ‬DŽ 01 MOSFET Contents


    Original     		RUM002N02 RZM002P02 RUE002N02 RZE002P02 RUM002N05 RUE002N05 RZF013P01 RZL025P01 RZR020P01 RW1A013ZP RSD130P10 rsd220n06 RDR005N25 RP1E090 RSD130P R6015 RCD040N25 rcd080n25 RSD050N10 R5207AND PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input


    Original     		2500Vrms BM6103FV-C BM6103FV-C 2500Vrms, 350ns, 180ns, PDF

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6101FV-C ●Key Specifications  Isolation voltage:  Maximum gate drive voltage:  I/O delay time:  Minimum input pulse width:


    Original     		2500Vrms BM6101FV-C BM6101FV-C 2500Vrms, 350ns, 180ns, SSOP-B20W PDF

    RSD130P10

    Abstract: RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200
    Text: 2010 Product Catalog Discrete Semiconductors MOSFETs MOSFETs ROHM offers a wide selection of MOSFETs, ranging from ultra-low ON-resistance products utilizing micro-process technology, high efficiency/breakdown units for switching applications, and high power components optimized for commercial/industrial systems.


    Original     		5V/60V R0039A 52P6214E RSD130P10 RDR005N25 RCD040N25 rsd220n06 RSY200N05 RSD050N10 RCX100N25 R5207AND RP1E090 rsy200 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input


    Original     		2500Vrms BM6103FV-C BM6103FV-C 2500Vrms, 350ns, 180ns, SSOP-B20W PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6104FV-C General Description Key Specifications     The BM6104FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 150ns, and minimum input


    Original     		2500Vrms BM6104FV-C BM6104FV-C 2500Vrms, 150ns, 150ns SSOP-B20W PDF

    ICC24

    Abstract: No abstract text available
    Text: BM6103FV-C Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●General Description The BM6103FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 350ns, and minimum input


    Original     		BM6103FV-C 2500Vrms BM6103FV-C 2500Vrms, 350ns, 180ns, ICC24 PDF

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM60013FV-C ●General Description The BM60013FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 200ns, and minimum input


    Original     		2500Vrms BM60013FV-C BM60013FV-C 2500Vrms, 200ns, 100ns, PDF